摘要:
A DFB type semiconductor laser device including a laser substrate, a grating layer, an insulating layer and an electrode layer, which are laminated in the given order. The insulating layer includes a through groove or grooves extending to the grating layer in a direction in which a resonator of the laser device is formed, and the electrode layer contacts the grating layer and a clad layer.
摘要:
An image forming apparatus includes a space portion for stacking sheets thereon, and is constituted of an image forming portion and an image reading portion including first and second scanning optical systems therein. In the image forming apparatus, the image reading portion is loaded on three points that correspond to both corners on the scanning start position side and one corner on the apparatus rear side. This configuration allows the first and second scanning optical systems to compensate for each other's misalignment, thereby obtaining stable output images.
摘要:
An imide-based photosensitive resin composition comprised of (1) a photosensitive imidosiloxane oligomer comprised of a reaction product of an imidosiloxane oligomer having a functional group reactive with an epoxy group and an epoxy compound having a photosensitive group, (2) an isocyanate having an unsaturated bond, (3) a photopolymerization initiator, and (4) an organic solvent, an insulating film obtained by curing the same, and a process for production of such an insulating film.
摘要:
A description is provided of a ridge-structure DFB semiconductor laser and a method of manufacturing the laser wherein an optical absorption loss by a metal electrode formed on a grating can be avoided. The DFB semiconductor laser includes: a ridge protruding from flat portions of a cladding layer which is formed on an active layer, the ridge includes a cladding layer and a contact layer sequentially formed on the active layer; a plurality of metal strips having a predetermined periodicity along a longitudinal direction of the ridge and extending from a surface of at least one of the flat portions to a top of the ridge; and an insulating layer formed on the plurality of metal strips at the top of the ridge.
摘要:
Erythromycin A derivatives represented by the general formula wherein R1 is a 2-alkenyl group having 3 to 15 carbon atoms, an arylmethyl group, or an arylmethyl group substituted by 1 to 3 of a halogen atom, an alkoxy group 1 to 4 carbon atoms, a nitro group or an alkoxycarbonyl group having 2 to 6 carbon atoms, R2 is a substituted silyl group and R3 is a hydrogen atom or R2, are disclosed. These compounds are useful as intermediates of the anti-bacterial agents.
摘要:
There is provided a method of manufacturing a ridge type LC-DFB semiconductor laser in which a laser substrate having a cladding layer made of a material for a ridge stripe formed on an active layer made of semiconductor. A stripe mask is formed on the cladding layer to form two lateral flat portions from the cladding layer, by a selective wet etching, so as to form a ridge stripe protruding therefrom and having a flat top portion at which the stripe mask capped. A grating mask is formed on the two lateral flat portions, side walls of the ridge stripe and the stripe mask. The grating mask has a periodic structure in the direction in which the ridge stripe extends. The two lateral flat portions and the side walls of the ridge stripe are dry-etched through the grating mask and then the two lateral flat portions and the side walls of the ridge stripe are wet-etched to form a grating of the material for the ridge stripe on the two lateral flat portions, the side walls of the ridge stripe and the active layer, so as to define a bracket grating portion adjacent to the ridge stripe.
摘要:
A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.
摘要:
An amorphous silicon thin film transistor array substrate is formed on an insulating substrate with a gate insulating layer, as gate wiring itnerconnecting gate electrodes and source wiring interconnecting source electrodes. The gate insulating layer is provided in a lower layer of a terminal part of the source wiring. In the process for forming the array, the gate insulating layer is formed in a portion of the structure other than the terminal part of the gate, and the terminal part of the source wiring is formed on the gate insulating layer.
摘要:
An optical scanning device comprises a beam source unit having a laser source, and a housing on which the beam source is mounted. The housing accommodates optical components through which a laser beam from the beam source unit is applied to the surface of an object thereby to optically scan the object surface. The housing includes a base plate carrying the optical components and a side wall provided with a beam source mounting portion which enables the beam source mounting portion which enables the beam source unit to be mounted and demounted on and from the side wall by a vertical movement of the beam source unit. Alternatively, the side wall of the housing is provided with a locating portion which provides a locating surface parallel to the optical axis of the laser beam.
摘要:
A 1,4-dihydropyridine derivative represented by the formula ##STR1## wherein R.sup.1 is a hydrogen atom, an alkoxy group having 1 to 4 carbon atoms, a mercapto group, an alkylcarbonylthio group in which the alkyl group has 1 to 4 carbon atoms or a benzoylthio group, R.sup.2 is a mercapto group, an alkylcarbonylthio group in which the alkyl group has 1 to 4 carbon atoms, a benzoylthio group or a 2-cyanoethylthio group, A and B are the same or different and are each an alkylene group having 1 to 4 carbon atoms, and X is a hydrogen atom, a halogen atom, a nitro group or a trifluoromethyl group is disclosed. These compounds increase the therapeutic effect of drug-resistant cancers.