Image forming apparatus
    72.
    发明授权
    Image forming apparatus 有权
    图像形成装置

    公开(公告)号:US06728511B2

    公开(公告)日:2004-04-27

    申请号:US09907592

    申请日:2001-07-19

    申请人: Yoshiaki Watanabe

    发明人: Yoshiaki Watanabe

    IPC分类号: G03G1500

    CPC分类号: G03G15/6552

    摘要: An image forming apparatus includes a space portion for stacking sheets thereon, and is constituted of an image forming portion and an image reading portion including first and second scanning optical systems therein. In the image forming apparatus, the image reading portion is loaded on three points that correspond to both corners on the scanning start position side and one corner on the apparatus rear side. This configuration allows the first and second scanning optical systems to compensate for each other's misalignment, thereby obtaining stable output images.

    摘要翻译: 图像形成装置包括用于在其上堆叠片材的空间部分,并且由图像形成部分和包括其中的第一和第二扫描光学系统的图像读取部分构成。 在图像形成装置中,图像读取部被装载在与扫描开始位置侧的两个角和装置后侧的一个角对应的三个点上。 该配置允许第一和第二扫描光学系统补偿彼此的未对准,从而获得稳定的输出图像。

    Photosensitive resin compositions, insulating films, and processes for formation of the films
    73.
    发明授权
    Photosensitive resin compositions, insulating films, and processes for formation of the films 失效
    感光树脂组合物,绝缘膜和用于形成膜的方法

    公开(公告)号:US06686106B2

    公开(公告)日:2004-02-03

    申请号:US09888561

    申请日:2001-06-26

    IPC分类号: G03F7075

    摘要: An imide-based photosensitive resin composition comprised of (1) a photosensitive imidosiloxane oligomer comprised of a reaction product of an imidosiloxane oligomer having a functional group reactive with an epoxy group and an epoxy compound having a photosensitive group, (2) an isocyanate having an unsaturated bond, (3) a photopolymerization initiator, and (4) an organic solvent, an insulating film obtained by curing the same, and a process for production of such an insulating film.

    摘要翻译: 一种酰亚胺系感光性树脂组合物,其包含(1)由具有与环氧基反应的官能团的亚氨基硅氧烷低聚物和具有感光性基团的环氧化合物的反应产物的感光性亚氨基硅氧烷低聚物,(2)具有 不饱和键,(3)光聚合引发剂,(4)有机溶剂,通过固化所得的绝缘膜,以及这种绝缘膜的制造方法。

    Ridge type semiconductor laser of laterally-coupled distributed feedback and method of manufacturing the same
    76.
    发明授权
    Ridge type semiconductor laser of laterally-coupled distributed feedback and method of manufacturing the same 失效
    脊式半导体激光器的横向耦合分布式反馈及其制造方法

    公开(公告)号:US06292503B1

    公开(公告)日:2001-09-18

    申请号:US09270827

    申请日:1999-03-18

    IPC分类号: H01S500

    摘要: There is provided a method of manufacturing a ridge type LC-DFB semiconductor laser in which a laser substrate having a cladding layer made of a material for a ridge stripe formed on an active layer made of semiconductor. A stripe mask is formed on the cladding layer to form two lateral flat portions from the cladding layer, by a selective wet etching, so as to form a ridge stripe protruding therefrom and having a flat top portion at which the stripe mask capped. A grating mask is formed on the two lateral flat portions, side walls of the ridge stripe and the stripe mask. The grating mask has a periodic structure in the direction in which the ridge stripe extends. The two lateral flat portions and the side walls of the ridge stripe are dry-etched through the grating mask and then the two lateral flat portions and the side walls of the ridge stripe are wet-etched to form a grating of the material for the ridge stripe on the two lateral flat portions, the side walls of the ridge stripe and the active layer, so as to define a bracket grating portion adjacent to the ridge stripe.

    摘要翻译: 提供了一种制造脊型LC-DFB半导体激光器的方法,其中具有由用于形成在由半导体制成的有源层上的用于脊条的材料制成的包层的激光基板。 在包覆层上形成条纹掩模,通过选择性湿蚀刻从包覆层形成两个横向平坦部分,从而形成从其突出的脊条,并且具有条形掩模封盖的平坦的顶部。 在两个侧面平坦部分,脊条和条纹掩模的侧壁上形成光栅掩模。 栅格掩模在脊条延伸的方向上具有周期性结构。 通过光栅掩模对棱条的两个横向平坦部分和侧壁进行干蚀刻,然后将脊条的两个侧向平坦部分和侧壁湿法蚀刻以形成用于脊的材料的光栅 在两个横向平坦部分上的条纹,脊状条的边壁和有源层,以便限定与脊条相邻的托架光栅部分。

    Silicon thin film transistor and method for producing the same
    77.
    发明授权
    Silicon thin film transistor and method for producing the same 失效
    硅薄膜晶体管及其制造方法

    公开(公告)号:US5109260A

    公开(公告)日:1992-04-28

    申请号:US564815

    申请日:1990-08-08

    摘要: A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.

    摘要翻译: 硅薄膜晶体管阵列包括阵列状形式的多个硅薄膜晶体管,每个硅薄膜晶体管包括绝缘基板,形成在绝缘基板上的栅电极,形成在绝缘基板上的栅绝缘层, 栅电极,一对第一杂质含有在栅极绝缘层上形成的跨越栅电极的端部的硅层,形成在一对第一杂质上的本征硅层含有硅层和在 一对第一杂质之间的栅极绝缘层包含硅层,以便连接一对第一杂质含硅层,形成在本征硅层上的保护绝缘层,以及形成在源极电极和漏电极 该对第一杂质的接触部分含有硅层; 用于将硅薄膜晶体管的栅电极彼此连接的栅极布线; 以及用于将硅薄膜晶体管的源电极彼此连接的源极布线。

    Amorphous silicon thin film transistor array substrate and method for
producing the same
    78.
    发明授权
    Amorphous silicon thin film transistor array substrate and method for producing the same 失效
    非晶硅薄膜晶体管阵列基板及其制造方法

    公开(公告)号:US5065202A

    公开(公告)日:1991-11-12

    申请号:US534003

    申请日:1990-06-04

    CPC分类号: H01L29/78669 H01L27/1214

    摘要: An amorphous silicon thin film transistor array substrate is formed on an insulating substrate with a gate insulating layer, as gate wiring itnerconnecting gate electrodes and source wiring interconnecting source electrodes. The gate insulating layer is provided in a lower layer of a terminal part of the source wiring. In the process for forming the array, the gate insulating layer is formed in a portion of the structure other than the terminal part of the gate, and the terminal part of the source wiring is formed on the gate insulating layer.

    摘要翻译: 在具有栅极绝缘层的绝缘基板上形成非晶硅薄膜晶体管阵列基板,作为栅极布线与栅极电极和源极布线互连源极电极连接。 栅极绝缘层设置在源极配线的端子部的下层。 在形成阵列的工艺中,栅极绝缘层形成在除了栅极的端子部分之外的结构的一部分中,源极配线的端子部分形成在栅极绝缘层上。

    Optical scanning device
    79.
    发明授权
    Optical scanning device 失效
    光学扫描装置

    公开(公告)号:US4977412A

    公开(公告)日:1990-12-11

    申请号:US286841

    申请日:1988-12-20

    CPC分类号: H04N1/036 G06K15/1204

    摘要: An optical scanning device comprises a beam source unit having a laser source, and a housing on which the beam source is mounted. The housing accommodates optical components through which a laser beam from the beam source unit is applied to the surface of an object thereby to optically scan the object surface. The housing includes a base plate carrying the optical components and a side wall provided with a beam source mounting portion which enables the beam source mounting portion which enables the beam source unit to be mounted and demounted on and from the side wall by a vertical movement of the beam source unit. Alternatively, the side wall of the housing is provided with a locating portion which provides a locating surface parallel to the optical axis of the laser beam.