摘要:
A semiconductor device includes a substrate, suspension structures extending from the upper surface of the substrate, and an absorber stack attached to the substrate by the suspension structures. The suspension structures suspend the absorber stack over the substrate such that a gap is defined between the absorber stack and the substrate. The absorber stack includes a plurality of metallization layers interleaved with a plurality of insulating layers. At least one of the metallization layers has a thickness of approximately 10 nm or less.
摘要:
A micromechanical device having a substrate wafer, a functional layer situated above it which has a mobile micromechanical structure, and a cap situated on top thereof, having a first cavity, which is formed at least by the substrate wafer and the cap and which includes the micromechanical structure. The micromechanical device has a fixed part and a mobile part, which are movably connected to each other with at least one spring element, and the first cavity is situated in the mobile part. Also described is a method for producing the micromechanical device.
摘要:
A device with an out-of-plane electrode includes a device layer positioned above a handle layer, a first electrode defined within the device layer, a cap layer having a first cap layer portion spaced apart from an upper surface of the device layer by a gap, and having an etch stop perimeter defining portion defining a lateral edge of the gap, and an out-of-plane electrode defined within the first cap layer portion by a spacer.
摘要:
A MEMS device includes a bolometer attached to a silicon wafer by a base portion of at least one anchor structure. The base portion comprises a layer stack having a metal-insulator-metal (MIM) configuration such that the base portion acts as a resistive switch such that, when the first DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state, and, when the second DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state.
摘要:
A semiconductor gas sensor device includes a substrate, a conductive layer supported by the substrate, a non-suitable seed layer, and a porous gas sensing layer portion. The non-suitable seed layer is formed from a first material and includes a first support portion supported by the conductive layer, a second support portion supported by the conductive layer, and a suspended seed portion extending from the first support portion to the second support portion and suspended above the conductive layer. The porous gas sensing layer portion is formed from a second material and is supported directly by the non-suitable seed layer in electrical communication with the conductive layer. The first material and the second material form a non-suitable pair of materials.
摘要:
A portable thermal imaging system includes a portable housing configured to be carried by a user, a bolometer sensor assembly supported by the housing and including an array of thermal sensor elements and at least one plasmonic lens, a memory including program instructions, and a processor operably connected to the memory and to the sensor, and configured to execute the program instructions to obtain signals from each of a selected set of thermal sensor elements of the array of thermal sensor elements, assign each of the obtained signals with a respective color data associated with a temperature of a sensed object, and render the color data.
摘要:
In one embodiment, a MEMS sensor includes a mirror and an absorber spaced apart from the mirror, the absorber including a plurality of spaced apart conductive legs defining a tortuous path across an area directly above the mirror.
摘要:
A metamaterial includes a first continuous layer formed with a first material by atomic layer deposition (ALD), a first non-continuous layer formed with a second material by ALD on first upper surface portions of a first upper surface of the first continuous layer, and a second continuous layer formed with the first material by ALD on second upper surface portions of the first upper surface of the first continuous layer and on a second upper surface of the first non-continuous layer.
摘要:
In one embodiment, a method of forming an out-of-plane electrode includes providing an oxide layer above an upper surface of a device layer, providing a first cap layer portion above an upper surface of the oxide layer, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the first material portion, vapor releasing a portion of the oxide layer, depositing a third cap layer portion above the second cap layer portion, etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion, and depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define out-of-plane electrode.
摘要:
In one embodiment, A MEMS sensor assembly includes a substrate, a first sensor supported by the substrate and including a first absorber spaced apart from the substrate, and a second sensor supported by the substrate and including (i) a second absorber spaced apart from the substrate, and (ii) at least one thermal shorting portion integrally formed with the second absorber and extending downwardly from the second absorber to the substrate thereby thermally shorting the second absorber to the substrate.