公开(公告)号：US07645364B2

公开(公告)日：2010-01-12

申请号：US10882712

申请日：2004-06-30

申请人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

发明人： Yezdi N. Dordi ,  Fred C. Redeker ,  John M. Boyd ,  Robert Maraschin ,  Carl Woods

IPC分类号： C25D21/00

CPC分类号： C25D17/14 ,  C25D5/06 ,  C25D7/123 ,  C25D17/001 ,  C25D21/12 ,  H01L21/2885

摘要： An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.

摘要翻译： 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时，电镀头能够在晶片表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对，以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时，由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。

公开(公告)号：US07604011B2

公开(公告)日：2009-10-20

申请号：US11670631

申请日：2007-02-02

申请人： Fred C. Redeker ,  John M. Boyd ,  John Parks

发明人： Fred C. Redeker ,  John M. Boyd ,  John Parks

IPC分类号： B08B3/12 ,  B08B7/02

CPC分类号： B08B3/12 ,  B08B7/0021 ,  H01L21/67057 ,  Y10S134/902

摘要： An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.

摘要翻译： 提供了一种使用高频声能与超临界流体来执行半导体晶片（“晶片”）清洁工艺的装置和方法。 高频声能被施加到超临界流体以赋予存在于晶片表面上的颗粒污染物的能量。 通过高频声能和超临界流体赋予颗粒污染物的能量被用来移除和去除晶片上的颗粒污染物。 此外，晶片清洗过程受益于近零表面张力，高扩散性，高密度和化学混合能力的超临界流体性质。

公开(公告)号：US07584761B1

公开(公告)日：2009-09-08

申请号：US11292465

申请日：2005-12-02

申请人： Seokmin Yun ,  John M. Boyd ,  John M. de Larios ,  Fritz Redeker

发明人： Seokmin Yun ,  John M. Boyd ,  John M. de Larios ,  Fritz Redeker

IPC分类号： B08B3/00

CPC分类号： B08B3/04 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

摘要： A method for cleaning an edge surface of a semiconductor substrate is disclosed. The proximity head unit is positioned so that the flow head portion and the collection head portion of the proximity head unit are proximate to the edge surface of the semiconductor substrate. The semiconductor substrate is then rotated using one or more powered rollers. During the rotation of the semiconductor substrate, the flow head portion applies a fluid to the edge surface while the collection head portion collects fluid from the edge surface. Additional methods, an apparatuses, and a system for cleaning an edge surface of a semiconductor substrate are also described.

摘要翻译： 公开了一种用于清洁半导体衬底的边缘表面的方法。 邻近头单元被定位成使得接近头单元的流动头部分和收集头部分靠近半导体衬底的边缘表面。 然后使用一个或多个动力辊旋转半导体衬底。 在半导体基板旋转期间，流动头部向边缘表面施加流体，而收集头部分从边缘表面收集流体。 还描述了另外的方法，装置和用于清洁半导体衬底的边缘表面的系统。

公开(公告)号：US20080254621A1

公开(公告)日：2008-10-16

申请号：US11735984

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

IPC分类号： H01L21/44 ,  B05C11/11 ,  B05C13/00

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1632 ,  H01L21/76873

摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

摘要翻译： 公开了一种用于晶片无电镀的干/干输出系统。 该系统包括用于晶片入口/出口和干燥操作的上部区域。 靠近头部设置在上部区域以执行干燥操作。 该系统还包括用于无电镀操作的下部区域。 下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。 系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。 系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。 系统是环境控制的。 此外，系统与环境受控的托管传输模块（MTM）接口。

公开(公告)号：US20080085370A1

公开(公告)日：2008-04-10

申请号：US11539155

申请日：2006-10-05

申请人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

发明人： William Thie ,  John M. Boyd ,  Yezdi Dordi ,  Fritz C. Redeker

IPC分类号： B05D1/18 ,  B05C3/00

CPC分类号： C23C18/1617 ,  C23C18/163 ,  C23C18/1678 ,  H01L21/67092

摘要： An electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.

摘要翻译： 提供无电镀系统。 该系统包括支撑第一晶片的第一真空卡盘和支撑第二晶片的第二真空卡盘，使得第二晶片的顶表面与第一晶片的顶表面相对。 该系统还包括配置成将电镀溶液输送到第一晶片的顶表面的流体输送系统，其中响应于电镀溶液的输送，第二晶片的顶表面靠近第一晶片的顶表面 使得电镀溶液接触两个顶表面。 还提供了一种将无电镀液施加到基底上的方法。

公开(公告)号：US07329321B2

公开(公告)日：2008-02-12

申请号：US11061944

申请日：2005-02-17

申请人： Seokmin Yun ,  John M. Boyd ,  Mark Wilcoxson ,  John deLarios

发明人： Seokmin Yun ,  John M. Boyd ,  Mark Wilcoxson ,  John deLarios

IPC分类号： B08B1/02

CPC分类号： H01L21/67028 ,  C23G1/00 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  Y10S134/902

摘要： A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.

摘要翻译： 提供了一种用于去除单个晶片清洁系统中的后处理残留物的方法。 该方法通过向设置在基板上的接近头部提供第一加热流体而开始。 然后，在基板的表面和邻近头部的相对表面之间产生第一流体的弯月面。 基板在邻近头部下线性移动。 还提供单个晶片清洁系统。

公开(公告)号：US07252097B2

公开(公告)日：2007-08-07

申请号：US10606022

申请日：2003-06-24

申请人： John M. Boyd ,  John M. de Larios ,  Michael Ravkin ,  Fred C. Redeker

发明人： John M. Boyd ,  John M. de Larios ,  Michael Ravkin ,  Fred C. Redeker

IPC分类号： B08B3/00 ,  B08B7/04

CPC分类号： H01L21/67028 ,  G03F7/70341 ,  H01L21/67034 ,  H01L21/67051 ,  Y10S134/902

摘要： A system and method for processing a wafer includes applying a process to the wafer. The process being supported by a surface tension gradient device. A result of the process is monitored. The monitored result is output.

摘要翻译： 用于处理晶片的系统和方法包括将工艺应用于晶片。 该过程由表面张力梯度装置支撑。 监视该过程的结果。 输出监视结果。

公开(公告)号：US07191787B1

公开(公告)日：2007-03-20

申请号：US10357664

申请日：2003-02-03

申请人： Fred C. Redeker ,  John M. Boyd ,  John Parks

发明人： Fred C. Redeker ,  John M. Boyd ,  John Parks

IPC分类号： B06B3/12

CPC分类号： B08B3/12 ,  B08B7/0021 ,  H01L21/67057 ,  Y10S134/902

摘要： An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.

摘要翻译： 提供了一种使用高频声能与超临界流体来执行半导体晶片（“晶片”）清洁工艺的装置和方法。 高频声能被施加到超临界流体以赋予存在于晶片表面上的颗粒污染物的能量。 通过高频声能和超临界流体赋予颗粒污染物的能量被用来移除和去除晶片上的颗粒污染物。 此外，晶片清洗过程受益于近零表面张力，高扩散性，高密度和化学混合能力的超临界流体性质。

公开(公告)号：US07165563B1

公开(公告)日：2007-01-23

申请号：US10326348

申请日：2002-12-19

申请人： John M. Boyd ,  Michael Ravkin ,  Fred C. Redecker

发明人： John M. Boyd ,  Michael Ravkin ,  Fred C. Redecker

IPC分类号： B08B3/00

CPC分类号： B08B3/12 ,  H01L21/02052 ,  H01L21/67057 ,  Y10S134/902

摘要： An apparatus and a method is provided for decoupling a cavitation in a liquid from an acoustic energy used to induce the cavitation. Broadly speaking, a pressure adjustment is used to control an acoustically induced cavitation in a liquid contained within a wafer cleaning apparatus, wherein the cavitation is defined by an amount and a size of gas bubbles. An increase in a pressure within the wafer cleaning apparatus results in a suppression of the cavitation. Conversely, a decrease in the pressure within the wafer cleaning apparatus results in an enhancement of the cavitation. Thus, independent control of the cavitation is provided without regard to the acoustic energy or a chemistry of the liquid. Controlling the cavitation allows for a safe and efficient wafer cleaning operation that can be customized to address specific requirements dictated by a particular wafer configuration.

摘要翻译： 提供了一种用于将液体中的空化与用于引发空化的声能分离的装置和方法。 一般来说，使用压力调节来控制包含在晶片清洁装置内的液体中的声学诱导空化，其中气蚀由气泡的量和尺寸限定。 晶片清洁装置内的压力的增加导致空化的抑制。 相反，晶片清洁装置内的压力降低导致空化的增强。 因此，在不考虑声能或液体的化学性的情况下提供空化的独立控制。 控制气蚀允许安全有效的晶片清洁操作，可以根据特定的晶片配置来定制特定的要求。

公开(公告)号：US07128279B2

公开(公告)日：2006-10-31

申请号：US10758029

申请日：2004-01-14

申请人： John M. Boyd ,  Carl Woods

发明人： John M. Boyd ,  Carl Woods

IPC分类号： B05B3/00

CPC分类号： H01L21/67051 ,  B08B3/022 ,  Y10S134/902

摘要： A fluid delivery device for delivering fluid to the backside of a substrate while minimizing waste is provided. The device includes an inner cylindrical tube having a top opening and a bottom opening. An upper cap overlying a top portion of the inner cylindrical tube is included. The upper cap is moveably disposed over the inner cylindrical tube. The upper cap includes a top with at least one hole defined therein. The top includes a sidewall extending therefrom. A system and a method for reducing an amount of a cleaning chemistry applied to a backside of a wafer during a cleaning operation are also provided.

摘要翻译： 提供了用于将流体输送到衬底的背面同时最小化废物的流体输送装置。 该装置包括具有顶部开口和底部开口的内部圆柱形管。 包括覆盖内圆柱形管的顶部的上盖。 上盖可移动地设置在内圆柱形管上。 上盖包括其中限定有至少一个孔的顶部。 顶部包括从其延伸的侧壁。 还提供了一种用于在清洁操作期间减少施加到晶​​片背面的清洁化学品的量的系统和方法。