摘要:
An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
摘要:
An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
摘要:
A method for cleaning a semiconductor substrate with a sonic cleaner is provided. The method initiates by introducing a cooling fluid into an inner jacket region of a sonic cleaner to cool a sonic resonator positioned within the inner jacket region. Then, a cleaning agent is introduced into an outer jacket region of the sonic cleaner to clean a semiconductor substrate. Next, a cooling fluid/cleaning agent interface is defined at an orifice location between the inner jacket region and the outer jacket region. Then, sonic energy from the resonator is transmitted to the cleaning agent through the interface at the orifice. Next, the cleaning agent is applied to the semiconductor substrate.
摘要:
A fluid delivery device for delivering fluid to the backside of a substrate while minimizing waste. The device includes an inner cylindrical tube having a top opening and a bottom opening. An upper cap overlying a top portion of the inner cylindrical tube is included. The upper cap is moveably disposed over the inner cylindrical tube. The upper cap includes a top with at least one hole defined therein. The top includes a sidewall extending therefrom. A system and a method for reducing an amount of a cleaning chemistry applied to a backside of a wafer during a cleaning operation are also provided.
摘要:
An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
摘要:
An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
摘要:
A fluid delivery device for delivering fluid to the backside of a substrate while minimizing waste is provided. The device includes an inner cylindrical tube having a top opening and a bottom opening. An upper cap overlying a top portion of the inner cylindrical tube is included. The upper cap is moveably disposed over the inner cylindrical tube. The upper cap includes a top with at least one hole defined therein. The top includes a sidewall extending therefrom. A system and a method for reducing an amount of a cleaning chemistry applied to a backside of a wafer during a cleaning operation are also provided.
摘要:
A method for cleaning a semiconductor substrate is provided. The method initiates with introducing a liquid onto the top surface of the semiconductor substrate. Then, a bottom surface of a resonator is coupled to a top surface of a semiconductor substrate through the liquid. Next, sonic energy is transmitted through the resonator to the liquid. Then, the liquid is heated through the bottom surface of the resonator. A method for applying localized heating to a cleaning chemistry during a cleaning operation of a semiconductor substrate is also provided. The method initiates with positioning a resonator to contact a surface of a cleaning chemistry applied to a semiconductor substrate. Then, heat energy is simultaneously applied with the sonic energy through the resonator to clean the semiconductor substrate. A device for cleaning a semiconductor substrate and system for cleaning a semiconductor substrate are also provided.
摘要:
A cluster architecture and methods for processing a substrate are disclosed. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment. And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment. The cluster architecture therefore enables controlled processing of the substrate in either the first, second or third ambient environments, as well as during associated transitions.
摘要:
An apparatus for generating a fluid meniscus to process a substrate is provided. The apparatus includes a manifold head with a manifold surface having a plurality of conduits configured to generate a fluid meniscus on a substrate surface when positioned proximate the substrate. The manifold head has a plurality of passages capable of communicating fluids with the plurality of conduits. The apparatus also includes an interface membrane attached to a portion of the manifold head. The interface membrane is configured to block a portion of the plurality of conduits during operation.