公开(公告)号：US06563743B2

公开(公告)日：2003-05-13

申请号：US09933044

申请日：2001-08-21

申请人： Satoru Hanzawa ,  Takeshi Sakata

发明人： Satoru Hanzawa ,  Takeshi Sakata

IPC分类号： G11C700

CPC分类号： G11C29/787 ,  G11C7/14 ,  G11C11/1673 ,  G11C11/1693

摘要： A dummy cell includes a plurality of first memory cells MC for storing “1” or “0”, arranged at points of intersection between a plurality of word lines WR0 to WR7 and a plurality of first data lines D0 to D7, a plurality of first dummy cells MCH for storing “1” or “0”, arranged at points of intersection between the word lines WR0 to WR7 and a first dummy data line, and a plurality of second dummy cells MCL for storing “0”, arranged at points of intersection between the word lines WR0 to WR7 and a second dummy data line DD1.

摘要翻译： 虚拟单元包括多个用于存储“1”或“0”的第一存储单元MC，其布置在多个字线WR0至WR7与多个第一数据线D0至D7之间的交点处，多个第一 用于存储“1”或“0”的虚拟单元MCH，布置在字线WR0至WR7和第一虚拟数据线之间的交点处，以及多个第二虚拟单元MCL，用于存储“0” 字线WR0〜WR7与第二伪数据线DD1的交点。

公开(公告)号：US06300807B1

公开(公告)日：2001-10-09

申请号：US09388438

申请日：1999-09-02

申请人： Masayuki Miyazaki ,  Koichiro Ishibashi ,  Takeshi Sakata ,  Satoru Hanzawa ,  Hiroyuki Mizuno ,  Kiyoshi Hasegawa ,  Masaru Kokubo ,  Hirokazu Aoki

发明人： Masayuki Miyazaki ,  Koichiro Ishibashi ,  Takeshi Sakata ,  Satoru Hanzawa ,  Hiroyuki Mizuno ,  Kiyoshi Hasegawa ,  Masaru Kokubo ,  Hirokazu Aoki

IPC分类号： H03L706

CPC分类号： H04L7/0008 ,  G06F1/10 ,  H03K5/135 ,  H04L7/0037

摘要： A timing-control circuit device, which uses a synchronous mirror delay circuit, for keeping the synchronization between clock signals in phase even at a load change. A reference clock signal (clkin 11) is entered to a timing-control circuit (SMDF 14) and used to generate an internal clock (dclk 12), then generates an external clock (clkout 13) through a buffer (BUF 15). The external clock signal is fed back to the timing-control circuit (SMDF 14) and used to generate an internal clock signal so as to synchronize the external clock signal in phase with the reference clock signal. The timing-control circuit is provided with a circuit (FDA 21, MCC 22) for detecting a phase difference between the internal clock signal and the external clock signal, as well as a delay circuit (DCL 24) for controlling a delay time, so that the delay circuit (DCL 24) can change the delay time according to the detected phase difference.

摘要翻译： 使用同步镜延迟电路的定时控制电路装置即使在负载变化时也保持时钟信号同步。 参考时钟信号（clkin 11）被输入到定时控制电路（SMDF 14），用于产生内部时钟（dclk12），然后通过缓冲器（BUF 15）产生外部时钟（clkout 13）。 外部时钟信号被反馈到定时控制电路（SMDF14），用于产生内部时钟信号，以使外部时钟信号与参考时钟信号同相。 定时控制电路设置有用于检测内部时钟信号和外部时钟信号之间的相位差的电路（FDA 21，MCC 22）以及用于控制延迟时间的延迟电路（DCL 24），因此 延迟电路（DCL24）可以根据检测到的相位差来改变延迟时间。

公开(公告)号：US08799560B2

公开(公告)日：2014-08-05

申请号：US13389260

申请日：2010-06-18

申请人： Satoru Hanzawa

发明人： Satoru Hanzawa

IPC分类号： G06F12/00

CPC分类号： G11C13/0004 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C13/0097

摘要： A high-speed large-capacity phase-change memory is achieved. A semiconductor device according to the present invention includes: a plurality of memory planes MP; a plurality of storage information register groups SDRBK paired with the plurality of memory planes; and a chip control circuit CPCTL. The plurality of memory planes include a plurality of memory cells. Also, the plurality of storage information register groups temporarily retain information to be stored in the plurality of memory planes. Further, the chip control circuit includes a register which temporarily stores a value indicating volume of the storage information, and a first storage information volume is smaller than a second storage information volume. When the first storage information volume is written, the plurality of memory planes and the plurality of storage information register groups are activated during a first period. When the second storage information volume is written, the plurality of memory planes and the plurality of storage information register groups are activated during a second period. By such a structure, the first period is shorter than the second period.

摘要翻译： 实现了高速大容量相变存储器。 根据本发明的半导体器件包括：多个存储器平面MP; 与多个存储器平面配对的多个存储信息寄存器组SDRBK; 和芯片控制电路CPCTL。 多个存储器平面包括多个存储单元。 此外，多个存储信息寄存器组临时保留要存储在多个存储器平面中的信息。 此外，芯片控制电路包括临时存储指示存储信息的卷的值的寄存器，并且第一存储信息量小于第二存储信息量。 当第一存储信息量被写入时，多个存储器平面和多个存储信息寄存器组在第一时段期间被激活。 当第二存储信息量被写入时，多个存储器平面和多个存储信息寄存器组在第二时段期间被激活。 通过这种结构，第一周期比第二周期短。

公开(公告)号：US08730717B2

公开(公告)日：2014-05-20

申请号：US13104005

申请日：2011-05-09

申请人： Satoru Hanzawa ,  Yoshitaka Sasago

发明人： Satoru Hanzawa ,  Yoshitaka Sasago

IPC分类号： G11C11/00

CPC分类号： G11C13/003 ,  G11C13/0004 ,  G11C13/0026 ,  G11C13/0028 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/75 ,  G11C2213/78 ,  H01L27/2454 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/124 ,  H01L45/144

摘要： A semiconductor device has multiple memory cell groups arranged at intersections between multiple word lines and multiple bit lines intersecting the word lines. The memory cell groups each have first and second memory cells connected in series. Each of the first and the second memory cells has a select transistor and a resistive storage device connected in parallel. The gate electrode of the select transistor in the first memory cell is connected with a first gate line, and the gate electrode of the select transistor in the second memory cell is connected to a second gate line. A first circuit block for driving the word lines (word driver group WDBK) is arranged between a second circuit block for driving the first and second gate lines (phase-change-type chain cell control circuit PCCCTL) and multiple memory cell groups (memory cell array MA).

摘要翻译： 半导体器件具有布置在多个字线和与字线相交的多个位线之间的交叉处的多个存储单元组。 存储单元组各自具有串联连接的第一和第二存储器单元。 第一和第二存储单元中的每一个具有并联连接的选择晶体管和电阻存储器件。 第一存储单元中的选择晶体管的栅电极与第一栅极线连接，第二存储单元中的选择晶体管的栅电极连接到第二栅极线。 用于驱动字线的第一电路块（字驱动器组WDBK）被布置在用于驱动第一和第二栅极线（相变型链单元控制电路PCCCTL）的第二电路块和多个存储单元组 阵列MA）。

公开(公告)号：US08699262B2

公开(公告)日：2014-04-15

申请号：US13270299

申请日：2011-10-11

申请人： Takao Watanabe ,  Satoru Hanzawa ,  Yoshitaka Sasago

发明人： Takao Watanabe ,  Satoru Hanzawa ,  Yoshitaka Sasago

IPC分类号： G11C11/24

CPC分类号： H01L45/06 ,  G11C13/0004 ,  G11C13/003 ,  G11C13/0069 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/75 ,  G11C2213/78 ,  G11C2213/79 ,  H01L27/2481

摘要： Adverse effects of a parasitic resistance and a parasitic capacitance of a driver circuit to a memory cell causes problems of thermal disturbance to a not-selected cell, unevenness of application voltage, degradation of a memory element in reading. A capacitor (C) is provided above or beneath a memory cell (MC) that includes a memory element to which a current write memory information and a selection element connected to the memory element. A charge stored in this capacitor writes to the memory element.

摘要翻译： 驱动电路的寄生电阻和寄生电容对存储单元的不利影响引起对未选择单元的热扰动，施加电压的不均匀性，读取中存储元件的劣化的问题。 电容器（C）设置在存储单元（MC）的上方或下方，存储单元（MC）包括与存储元件连接的当前写入存储器信息和选择元件的存储元件。 存储在该电容器中的电荷写入存储器元件。

公开(公告)号：US08427865B2

公开(公告)日：2013-04-23

申请号：US13440225

申请日：2012-04-05

申请人： Akio Shima ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Toshiyuki Mine ,  Norikatsu Takaura ,  Takahiro Morikawa ,  Kenzo Kurotsuchi ,  Satoru Hanzawa

发明人： Akio Shima ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Toshiyuki Mine ,  Norikatsu Takaura ,  Takahiro Morikawa ,  Kenzo Kurotsuchi ,  Satoru Hanzawa

IPC分类号： G11C11/00 ,  H01L29/80

CPC分类号： H01L27/2481 ,  G11C13/0004 ,  G11C13/003 ,  G11C2213/71 ,  G11C2213/75 ,  G11C2213/79 ,  H01L27/2454 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1683

摘要： There is provided a semiconductor storage device which is capable of further reducing a size of a memory cell, and increasing a storage capacity. Plural memory cells each including a transistor formed on a semiconductor substrate, and a variable resistive device having a resistance value changed by voltage supply and connected between source and drain terminals of the transistor are arranged longitudinally and in an array to configure a three-dimensional memory cell array. A memory cell structure has a double channel structure in which an inside of a switching transistor is filled with a variable resistance element, particularly, a phase change material. The switching transistor is turned off by application of a voltage to increase a channel resistance so that a current flows in the internal phase change material to operate the memory.

摘要翻译： 提供了能够进一步减小存储单元的尺寸并增加存储容量的半导体存储装置。 每个包括形成在半导体衬底上的晶体管的多个存储单元以及具有由电压供应改变并连接在晶体管的源极和漏极端子之间的电阻值的可变电阻器件被纵向排列成阵列以构成三维存储器 单元格阵列。 存储单元结构具有双通道结构，其中开关晶体管的内部填充有可变电阻元件，特别是相变材料。 通过施加电压来切换开关晶体管，以增加沟道电阻，使得电流在内部相变材料中流动以操作存储器。

公开(公告)号：US08248843B2

公开(公告)日：2012-08-21

申请号：US12986178

申请日：2011-01-07

申请人： Satoru Hanzawa ,  Yoshikazu Iida

发明人： Satoru Hanzawa ,  Yoshikazu Iida

IPC分类号： G11C11/00

CPC分类号： G11C13/0069 ,  G11C13/0004 ,  G11C13/004 ,  G11C2213/79

摘要： In a memory array MCA which includes memory cells MC each having a variable-resistance-based memory device RQ and a select transistor MQ, an object is to receive a fixed quantity of storage data for a short time, and to realize writing operation to the memory cell, with suppressed peak current. In order to achieve the object, the data bus occupation time in rewriting operation is shortened by using plural sense amplifiers and storing storage data temporarily, and plural programming circuits are provided and activated using the control signals with different phases. By the above, the phase change memory system with low current consumption can be realized, without causing degradation of the utilization ratio of the data bus.

摘要翻译： 在包括具有可变电阻的存储器件RQ和选择晶体管MQ的存储单元MC的存储器阵列MCA中，目的是在短时间内接收固定量的存储数据，并且实现对 存储单元，具有抑制的峰值电流。 为了实现该目的，通过使用多个读出放大器和临时存储存储数据来缩短重写操作中的数据总线占用时间，并且使用具有不同相位的控制信号来提供和激活多个编程电路。 通过上述，可以实现具有低电流消耗的相变存储器系统，而不会降低数据总线的利用率。

公开(公告)号：US20120134203A1

公开(公告)日：2012-05-31

申请号：US13300139

申请日：2011-11-18

申请人： Seiji Miura ,  Satoru Hanzawa

发明人： Seiji Miura ,  Satoru Hanzawa

IPC分类号： G11C11/00 ,  G11C7/10

CPC分类号： G11C13/0007 ,  G11C8/08 ,  G11C8/18 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2013/0088 ,  G11C2211/5623

摘要： In a phase change memory, when M bit (8 bits=1 byte) data is written, erase operation and program operation are performed in units of n bit (M>n) data. Further, when M bit data is written, program operation is performed in units of the n bit (M>n) data. Further, when M bit data is read from the memory cell, read operation is performed in units of the n bit (M>n) data. For example, when the data is written into to the phase change memory, the data is not overwritten but program is performed after once erasing the target memory cell. The data size for erasure and the data size for program are made equal. Erase and program operation are performed only for the demanded data size.

摘要翻译： 在相变存储器中，当写入M位（8位= 1字节）数据时，以n位（M> n）数据为单位执行擦除操作和编程操作。 此外，当写入M位数据时，以n位（M> n）数据为单位执行编程操作。 此外，当从存储单元读取M位数据时，以n位（M> n）数据为单位执行读操作。 例如，当数据被写入相变存储器时，数据不被重写，而是在擦除目标存储单元之后执行程序。 擦除的数据大小和程序的数据大小相等。 擦除和编程操作仅针对所需的数据大小执行。

公开(公告)号：US20120087178A1

公开(公告)日：2012-04-12

申请号：US13270299

申请日：2011-10-11

申请人： Takao WATANABE ,  Satoru Hanzawa ,  Yoshitaka Sasago

发明人： Takao WATANABE ,  Satoru Hanzawa ,  Yoshitaka Sasago

IPC分类号： G11C11/24

CPC分类号： H01L45/06 ,  G11C13/0004 ,  G11C13/003 ,  G11C13/0069 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/75 ,  G11C2213/78 ,  G11C2213/79 ,  H01L27/2481

摘要： Adverse effects of a parasitic resistance and a parasitic capacitance of a driver circuit to a memory cell causes problems of thermal disturbance to a not-selected cell, unevenness of application voltage, degradation of a memory element in reading. A capacitor (C) is provided above or beneath a memory cell (MC) that includes a memory element to which a current write memory information and a selection element connected to the memory element. A charge stored in this capacitor writes to the memory element.

摘要翻译： 驱动电路的寄生电阻和寄生电容对存储单元的不利影响引起对未选择单元的热扰动，施加电压的不均匀性，读取中存储元件的劣化的问题。 电容器（C）设置在存储单元（MC）的上方或下方，存储单元（MC）包括与存储元件连接的当前写入存储器信息和选择元件的存储元件。 存储在该电容器中的电荷写入存储器元件。

公开(公告)号：US07996735B2

公开(公告)日：2011-08-09

申请号：US12469778

申请日：2009-05-21

申请人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

发明人： Motoyasu Terao ,  Satoru Hanzawa ,  Hitoshi Kume ,  Minoru Ogushi ,  Yoshitaka Sasago ,  Masaharu Kinoshita ,  Norikatsu Takaura

IPC分类号： G11C29/00

CPC分类号： G11C13/0064 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50008 ,  G11C2013/0054 ,  G11C2213/72

摘要： To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.

摘要翻译： 为了实现低功耗的快速且高度可靠的相变存储器系统，半导体器件包括：存储器件，其包括具有包括多个第一存储器单元的第一区域的第一存储器阵列和包括多个第一存储器单元的第二区域 第二存储单元; 控制器，其耦合到所述存储器设备以向所述存储器设备发出命令; 以及用于存储多个试写条件的条件表。 控制器基于存储在条件表中的多个试写条件，在多个第二存储单元中执行多次尝试写入，并且基于试写的结果来确定多个第一存储单元中的写入条件。 存储器件基于从控制器指示的写入条件在多个第一存储器单元中执行写入。