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    SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING THE SAME, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
    71.
    发明申请
    SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING THE SAME, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE 有权
    固态成像装置，其驱动方法，其制造方法和电子装置

    公开(公告)号：US20140084143A1

    公开(公告)日：2014-03-27

    申请号：US14119271

    申请日：2012-07-05

    Applicant: Sony Corporation

    Inventor： Yorito Sakano ,  Keiji Mabuchi ,  Takashi Machida

    IPC: H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/14625 ,  H01L27/14638 ,  H01L27/14689 ,  H04N5/353 ,  H04N5/3559 ,  H04N5/3591 ,  H04N5/37452

    Abstract: A solid-state imaging device includes a photoelectric conversion section configured to generate photocharges and a transfer gate that transfers the photocharges to a semiconductor region. A method for driving a unit pixel includes a step of accumulating photocharges in a photoelectric conversion section and a step of accumulating the photocharges in a semiconductor region. A method of forming a solid-state imaging device includes implanting ions into a well layer through an opening in a mask, implanting additional ions into the well layer through an opening in another mask, and implanting other ions into the well layer through an opening in yet another mask. An electronic device includes the solid-state imaging device.

    Abstract translation: 固态成像装置包括被配置为产生光电荷的光电转换部分和将光电荷转移到半导体区域的传输门。 用于驱动单位像素的方法包括在光电转换部分中累积光电荷的步骤和在半导体区域中积累光电荷的步骤。 形成固态成像装置的方法包括通过掩模中的开口将离子注入阱层，通过另一掩模中的开口将额外的离子注入到阱层中，并通过其中的开口将其它离子注入到阱层中 又一个面具。 电子设备包括固态成像装置。

    BACK-ILLUMINATED TYPE SOLID-STATE IMAGING DEVICE
    72.
    发明申请
    BACK-ILLUMINATED TYPE SOLID-STATE IMAGING DEVICE 有权
    背光照明型固态成像装置

    公开(公告)号：US20140038342A1

    公开(公告)日：2014-02-06

    申请号：US14052323

    申请日：2013-10-11

    Applicant: Sony Corporation

    Inventor： Keiji Mabuchi

    IPC: H01L31/18

    CPC classification number: H01L27/1464 ,  H01L27/14603 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/18 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73257 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A method for manufacturing a back-illuminated type solid-state imaging device by (a) providing a substrate having, on a front surface side thereof, a semiconductor film on a semiconductor substrate with an insulation film therebetween; (b) forming in the semiconductor substrate a charge accumulation portion of a photoelectric conversion element that constitutes a pixel; (c) forming in the semiconductor film at least some transistors that constitute the pixel; and (d) forming on a rear surface side of the semiconductor substrate a rear surface electrode to which a voltage can be applied.

    Abstract translation: 一种背照式固体摄像装置的制造方法，其特征在于，具备：（a）在半导体基板的表面侧设置绝缘膜的半导体膜的基板， （b）在半导体衬底中形成构成像素的光电转换元件的电荷累积部分; （c）在所述半导体膜中形成构成所述像素的至少一些晶体管; 以及（d）在半导体衬底的背表面侧上形成能够施加电压的背面电极。

    SOLID-STATE IMAGER DEVICE, DRIVE METHOD OF SOLID-STATE IMAGER DEVICE AND CAMERA APPARATUS
    73.
    发明申请
    SOLID-STATE IMAGER DEVICE, DRIVE METHOD OF SOLID-STATE IMAGER DEVICE AND CAMERA APPARATUS 失效
    固态成像装置，固态成像装置的驱动方法及相机装置

    公开(公告)号：US20130044245A1

    公开(公告)日：2013-02-21

    申请号：US13656011

    申请日：2012-10-19

    Applicant: SONY CORPORATION

    Inventor： Keiji Mabuchi ,  Nobuhiro Karasawa

    IPC: H01L31/0248 ,  H04N5/335 ,  H01L27/146

    CPC classification number: H01L27/14643 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464

    Abstract: In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.

    Abstract translation: 为了防止从硅界面产生暗电流的情况，采用在基板背面侧形成p +层的结构时，会出现各种问题。 根据本发明，在硅基板31的后表面上设置绝缘膜39，并且还在其上设置透明电极40，并且通过从电压源施加相对于硅基板31的电位的负电压 源极41通过透明电极40连接到绝缘膜39，在基板背面侧的硅界面上积累有空穴，并且与上述硅界面上存在空穴积聚层的状态相当的结构为 被创建。 因此，可以避免现有技术中的各种问题。

    Solid-state imaging device, production method of the same, and imaging apparatus
    75.
    发明授权
    Solid-state imaging device, production method of the same, and imaging apparatus 有权

    公开(公告)号：US10304879B2

    公开(公告)日：2019-05-28

    申请号：US16199529

    申请日：2018-11-26

    Applicant: Sony Corporation

    Inventor： Keiji Mabuchi

    IPC: H04N3/14 ,  H04N5/335 ,  H01L27/146 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/378 ,  H04N9/04 ,  H04N5/357 ,  H01L31/0352

    Abstract: A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

    Conversion apparatus, imaging apparatus, electronic apparatus, and conversion method
    76.
    发明授权
    Conversion apparatus, imaging apparatus, electronic apparatus, and conversion method 有权

    公开(公告)号：US10291829B2

    公开(公告)日：2019-05-14

    申请号：US15867011

    申请日：2018-01-10

    Applicant: SONY CORPORATION

    Inventor： Keiji Mabuchi

    IPC: H03M1/12 ,  H03M1/14 ,  H03M1/56 ,  H04N5/225 ,  H04N5/376 ,  H04N5/378 ,  H04N5/3745

    Abstract: The present technology relates to a conversion apparatus, an imaging apparatus, an electronic apparatus, and a conversion method that are capable of reducing the scale of a circuit.The conversion apparatus includes: a comparison unit that compares an input voltage of an input signal and a ramp voltage of a ramp signal that varies with time; and a storage unit that holds a code value when a comparison result from the comparison unit is inverted, the holding of the code value by the storage unit being repeated a plurality of times, to generate a digital signal having a predetermined bit number. The predetermined bit number is divided into high-order bits and low-order bits, the low-order bits are acquired earlier than the high-order bits, and the acquired low-order bits and the high-order bits are combined with each other, to generate the digital signal having the predetermined bit number. The present technology can be applied to a portion of an image sensor, in which AD conversion is performed.

    High signal to noise ratio of image based on signals with different sensitivities
    80.
    发明授权
    High signal to noise ratio of image based on signals with different sensitivities 有权

    公开(公告)号：US09826185B2

    公开(公告)日：2017-11-21

    申请号：US14921819

    申请日：2015-10-23

    Applicant: SONY CORPORATION

    Inventor： Keiji Mabuchi

    IPC: H04N5/378 ,  H04N5/235 ,  H04N5/355

    CPC classification number: H04N5/378 ,  H04N5/2351 ,  H04N5/35545

    Abstract: Provided is a solid-state imaging device including: a pixel array section that pixels which detect a physical quantities are arranged in two dimensions of matrix; an AD converting section that performs AD (Analog-Digital) conversion for a plurality of channels of analog pixel signals which are read-out from the pixel array section; and a control section that sets quantized units AD-converted by the AD conversion section according to a gain setting of the unit pixel signal, wherein the control section determines the grayscale number of digital outputs AD-converted for at least one channel of the unit pixel signals according to the gain setting of the pixel signal.

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