公开(公告)号：US20230075189A1

公开(公告)日：2023-03-09

申请号：US18048484

申请日：2022-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwanghee KIM ,  Moon Gyu HAN ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: H01L51/50 ,  H01L51/56 ,  C09K11/02 ,  C09K11/88

Abstract: A light emitting device including a first electrode and a second electrode spaced from each other, and, a light emitting film between the first electrode and the second electrode, wherein the light emitting film has a first surface facing the second electrode and a second surface opposite thereto, the light emitting film includes a quantum dot layer including a plurality of quantum dots and a matrix including a metal chalcogenide, the plurality of quantum dots includes selenium, the matrix covers at least a portion of the quantum dot layer, the metal chalcogenide comprises zinc and sulfur, and in an X-ray photoelectron spectroscopic analysis of the first surface of the light emitting film, a mole ratio of zinc with respect to selenium is greater than or equal to about 2:1 and a mole ratio of sulfur with respect to selenium is greater than or equal to about 1.1:1.

公开(公告)号：US20220243125A1

公开(公告)日：2022-08-04

申请号：US17726702

申请日：2022-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook JANG ,  Yuho WON ,  Sungwoo HWANG ,  Ji Yeong KIM ,  Eun Joo JANG

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L51/50 ,  H01L27/32 ,  C09D133/00 ,  C08F220/06 ,  C09D133/02

Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.

公开(公告)号：US20220223765A1

公开(公告)日：2022-07-14

申请号：US17706925

申请日：2022-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Jihyun MIN ,  Eun Joo JANG ,  Hyo Sook JANG

IPC: H01L33/50 ,  C09K11/88 ,  H01L31/0232 ,  H01L31/0384 ,  H01L31/055 ,  H01L21/02 ,  C09K11/02 ,  C09K11/70 ,  H01L31/105 ,  H01L33/08

Abstract: An emissive nanocrystal particle includes a core including a first semiconductor nanocrystal including a Group III-V compound and a shell including a second semiconductor nanocrystal surrounding the core, wherein the emissive nanocrystal particle includes a non-emissive Group I element.

公开(公告)号：US20220195110A1

公开(公告)日：2022-06-23

申请号：US17559388

申请日：2021-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Norihito ISHII ,  Takahiro FUJIYAMA ,  Masashi TSUJI ,  Naotoshi SUGANUMA ,  Yusaku KONISHI ,  Dae Young CHUNG ,  Eun Joo JANG ,  Ha Il KWON ,  Hyo Sook JANG ,  Soonmin CHA ,  Tae Ho KIM ,  Fumiaki KATO

IPC: C08G61/12 ,  H01L51/00

Abstract: A copolymer, including a structural unit represented by Chemical Formula 1, a structural unit represented by Chemical Formula 2, or a combination thereof: wherein R1, R2, R3, X1, X2, and Ar1 are as provided herein.

公开(公告)号：US20220149311A1

公开(公告)日：2022-05-12

申请号：US17515784

申请日：2021-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongkyu SEO ,  Tae Hyung KIM ,  Eun Joo JANG ,  Won Sik YOON ,  Hyo Sook JANG ,  Oul CHO

IPC: H01L51/50 ,  H01L51/56 ,  H01L51/00

Abstract: A method of manufacturing a light emitting device that includes providing a first electrode, forming a light emitting layer including quantum dots on the first electrode, forming an electron auxiliary layer on the light emitting layer, and forming a second electrode on the electronic auxiliary layer. The forming of the electron auxiliary layer includes forming an electron auxiliary layer including a plurality of metal oxide nanoparticles, and contacting the plurality of metal oxide nanoparticles with a base including a hydroxyl group (OH).

公开(公告)号：US20210288258A1

公开(公告)日：2021-09-16

申请号：US17193078

申请日：2021-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Masashi TSUJI ,  Takahiro FUJIYAMA ,  Yusaku KONISHI ,  Dae Young CHUNG ,  Fumiaki KATO ,  Jaejun CHANG ,  Keigo FURUTA ,  Takao MOTOYAMA ,  Eun Joo JANG ,  Hyo Sook JANG ,  Tae Ho KIM ,  Tomoyuki KIKUCHI ,  Yuho WON

IPC: H01L51/00 ,  C08G61/12 ,  C09K11/06

Abstract: The present disclosure provides a technique capable of improving durability (particularly luminescence life-span) of an electroluminescence. In order to solve the above problems, the present disclosure provides an arylamine-fluorene alternating copolymer having a structural unit (A) represented by Chemical Formula (1).

公开(公告)号：US20210062087A1

公开(公告)日：2021-03-04

申请号：US17007179

申请日：2020-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo KIM ,  Jin A KIM ,  Tae Hyung KIM ,  Kun Su PARK ,  Yuho WON ,  Jeong Hee LEE ,  Eun Joo JANG ,  Hyo Sook JANG ,  Yong Seok HAN ,  Heejae CHUNG

IPC: C09K11/88 ,  H01L33/18 ,  H01L51/50

Abstract: A quantum dot including a core comprising a first semiconductor nanocrystal including a zinc chalcogenide and a semiconductor nanocrystal shell disposed on the surface of the core and comprising zinc, selenium, and sulfur. The quantum dot does not comprise cadmium, emits blue light, and may exhibit a digital diffraction pattern obtained by a Fast Fourier Transform of a transmission electron microscopic image including a (100) facet of a zinc blende structure. In an X-ray diffraction spectrum of the quantum dot, a ratio of a defect peak area with respect to a peak area of a zinc blende crystal structure is less than about 0.8:1. A method of producing the quantum dot, and an electroluminescent device including the quantum dot are also disclosed.

公开(公告)号：US20210040386A1

公开(公告)日：2021-02-11

申请号：US16986384

申请日：2020-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  The Governing Council of the University of Toronto

Inventor： Jihyun MIN ,  Eun Joo JANG ,  Edward H. SARGENT ,  Hyo Sook JANG ,  Makhsud I. SAIDAMINOV ,  Sjoerd HOOGLAND ,  Ankit JAIN ,  Andrew JOHNSTON ,  Oleksandr VOZNYY

IPC: C09K11/75 ,  C09K11/02

Abstract: A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided: AxA′(3+α−x)D(2+β)E(9+γ).   Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A′ is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1 0, −1

公开(公告)号：US20200024512A1

公开(公告)日：2020-01-23

申请号：US16519188

申请日：2019-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Seon-Yeong KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Soo Kyung KWON ,  Yong Wook KIM

IPC: C09K11/70 ,  C09K11/62 ,  C09K11/88 ,  H01L29/12

Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.

公开(公告)号：US20190006556A1

公开(公告)日：2019-01-03

申请号：US16111848

申请日：2018-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Garam PARK ,  Tae Hyung KIM ,  Eun Joo JANG ,  Hyo Sook JANG ,  Shin Ae JUN ,  Yongwook KIM ,  Taekhoon KIM ,  Jihyun MIN ,  Yuho WON

IPC: H01L33/04 ,  C09K11/88 ,  C09K11/70 ,  C09K11/61 ,  C09K11/02 ,  H01L33/32 ,  H01L33/30 ,  H01L33/28 ,  H01L33/24 ,  H01L33/34

CPC classification number: H01L33/04 ,  C09K11/025 ,  C09K11/615 ,  C09K11/70 ,  C09K11/883 ,  H01L33/24 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/34

Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.