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公开(公告)号：US20240362109A1
公开(公告)日：2024-10-31
申请号：US18623837
申请日：2024-04-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taekhoon KIM , June-Hyun PARK
IPC: G06F11/10
CPC classification number: G06F11/10
Abstract: Disclosed is a memory device which includes a plurality of memory chips. Each of the plurality of memory chips, in response to a post package repair (PPR) command and a target value received from a controller, performs a write operation of write data with respect to memory cells corresponding to a row address generated in a PPR mode executed in response to the PPR command, performs read operation with respect to the memory cells, resulting in read data, generates a comparison signal based on a result of comparing the write data and the read data programs the row address corresponding to the comparison signal as a selected fail row address, and writes the write data in redundancy memory cells, which are connected to a redundancy word line used to replace a fail word line corresponding to the selected fail row address, from among the plurality of memory cells.
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公开(公告)号：US20240049007A1
公开(公告)日：2024-02-08
申请号：US18450077
申请日：2023-08-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yuanyuan ZHANG , Dan LIU , He WANG , Yankun LI , Bozhi LI , Chanho AN , Taekhoon KIM
IPC: H04W24/02 , H04W8/24 , H04B7/0413
CPC classification number: H04W24/02 , H04W8/24 , H04B7/0413
Abstract: A wireless communication method, a network node, a UE and/or a storage medium are provided. A wireless communication method performed by a network node may include: receiving capability information reported by a UE regarding a carrier aggregation capability of the UE; transmitting configuration information to the UE according to the receiving capability information, wherein the configuration information includes at least one of: primary and/or secondary cell configuration of the UE; configuration to control the UE for carrier aggregation capability switching.
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公开(公告)号：US20200283680A1
公开(公告)日：2020-09-10
申请号：US16883989
申请日：2020-05-26
Inventor： Shin Ae JUN , Taekhoon KIM , Garam PARK , Yong Seok HAN , Eun Joo JANG , Hyo Sook JANG , Tae Won JEONG , Shang Hyeun PARK
IPC: C09K11/02 , C09K11/88 , C09K11/70 , C08K3/32 , C08K3/30 , G02F1/1335 , G02F1/13357
Abstract: A quantum dot, including a core including a first semiconductor material that includes indium; and a shell including a second semiconductor material, and disposed on the core, wherein the first semiconductor material and the second semiconductor material are different, wherein the shell has at least two branch portions and a valley portion connecting the at least two branch portions, at least one of the at least two branch portions comprises Zn, Se, and S, and a content of sulfur in the at least one branch portion increases in a direction away from the core.
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公开(公告)号：US20240001326A1
公开(公告)日：2024-01-04
申请号：US17853857
申请日：2022-06-29
Inventor： Taekhoon KIM , Milad Abolhasani , Hyeyeon YANG , Shin Ae JUN , Robert W. EPPS
IPC: B01J19/00
CPC classification number: B01J19/0053 , B82Y30/00
Abstract: An apparatus for accelerated multi-stage synthesis of quantum dots (QDs) includes an injector which injects a material for producing QDs, a first reactor connected to the injector and including at least one selected from a coil reactor and a plate reactor, a second reactor connected to the first reactor and including at least one selected from the coil reactor and the plate reactor, and a first junction connected between the first reactor and the second reactor and provided with an inlet for injecting the material for producing the QDs.
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公开(公告)号：US20230365862A1
公开(公告)日：2023-11-16
申请号：US18354182
申请日：2023-07-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyunki KIM , Shin Ae JUN , Eun Joo JANG , Yongwook KIM , Tae Gon KIM , Yuho WON , Taekhoon KIM , Hyo Sook JANG
CPC classification number: C09K11/883 , C09K11/025 , C09K11/565 , C09K11/61 , C09K11/612 , C09K11/70 , C09K11/705 , C09K11/72 , C09K11/722 , C09K11/88 , H01L29/0665 , H01L29/22 , B82Y40/00
Abstract: A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide
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Patent Agency Ranking
公开(公告)号：US20230255043A1
公开(公告)日：2023-08-10
申请号：US18194794
申请日：2023-04-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Nayoun WON , Mi Hye LIM , Tae Gon KIM , Taekhoon KIM , Shang Hyeun PARK , Shin Ae JUN
IPC: H10K50/115 , C09K11/02 , C09K11/56 , C09K11/70 , C09K11/88
CPC classification number: H10K50/115 , C09K11/02 , C09K11/565 , C09K11/703 , C09K11/883
Abstract: A cadmium-free, core shell quantum dot, a quantum dot polymer composite, and electronic devices including the quantum dot polymer composite. The core shell quantum dot has an extinction coefficient per gram of greater than or equal to 0.3, an ultraviolet-visible absorption spectrum curve that has a positive differential coefficient value at 450 nm, wherein the core shell quantum dot includes a semiconductor nanocrystal core including indium and phosphorus, and optionally zinc, and a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the shell including zinc, selenium, and sulfur, wherein the core shell quantum dot has a quantum efficiency of greater than or equal to about 80%, and is configured to emit green light upon excitation.
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公开(公告)号：US20190006556A1
公开(公告)日：2019-01-03
申请号：US16111848
申请日：2018-08-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Garam PARK , Tae Hyung KIM , Eun Joo JANG , Hyo Sook JANG , Shin Ae JUN , Yongwook KIM , Taekhoon KIM , Jihyun MIN , Yuho WON
IPC: H01L33/04 , C09K11/88 , C09K11/70 , C09K11/61 , C09K11/02 , H01L33/32 , H01L33/30 , H01L33/28 , H01L33/24 , H01L33/34
CPC classification number: H01L33/04 , C09K11/025 , C09K11/615 , C09K11/70 , C09K11/883 , H01L33/24 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/34
Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.
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公开(公告)号：US20170179338A1
公开(公告)日：2017-06-22
申请号：US15386512
申请日：2016-12-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Garam PARK , Tae Hyung KIM , Eun Joo JANG , Hyo Sook JANG , Shin Ae JUN , Yongwook KIM , Taekhoon KIM , Jihyun MIN , Yuho WON
CPC classification number: H01L33/04 , C09K11/025 , C09K11/615 , C09K11/70 , C09K11/883 , H01L33/24 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/34
Abstract: A quantum dot includes a core-shell structure including a core including a first semiconductor nanocrystal and a shell disposed on the core, and including a material at least two different halogens, and the quantum dot does not include cadmium.
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9.发明申请公开(公告)号：US20220283345A1
公开(公告)日：2022-09-08
申请号：US17687448
申请日：2022-03-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Taekhoon KIM , Tae Gon KIM , Hyeyeon YANG , Jongmin LEE , Shin Ae JUN , Deuk Kyu MOON , A Ra JO , Jooyeon AHN , Nayoun WON , Mi Hye LIM
Abstract: A color conversion panel includes a color conversion layer including a color conversion region, and optionally, a partition wall defining the region of the color conversion layer. The color conversion region includes a first region corresponding to a green pixel, and the first region includes a first composite that is configured to emit a green light and includes a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide, the Group III-V compound includes indium, phosphorus, and optionally zinc, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium. and at least a portion of surfaces of the luminescent nanostructures includes the second semiconductor nanocrystal. The emitted green light has a full width at half maximum of a maximum luminescent peak of less than or equal to about 42 nm.
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10.发明申请公开(公告)号：US20220282154A1
公开(公告)日：2022-09-08
申请号：US17687543
申请日：2022-03-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jooyeon AHN , Taekhoon KIM , Deuk Kyu MOON , Jongmin LEE , Mi Hye LIM , Shin Ae JUN , Minho KIM , Yebin JUNG
IPC: C09K11/88 , G02F1/1335 , C09K11/08 , C09D11/50 , C09D11/037
Abstract: A color conversion panel that includes a color conversion layer including one or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the same. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures do not include cadmium. The luminescent nanostructures further include fluorine, and in the luminescent nanostructures, a mole ratio of fluorine to indium is greater than or equal to about 0.05:1.
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