公开(公告)号：US08624292B2

公开(公告)日：2014-01-07

申请号：US13155857

申请日：2011-06-08

Applicant: Shaoher X. Pan ,  Jay Chen ,  Justin A. Payne ,  Michael Heuken

Inventor： Shaoher X. Pan ,  Jay Chen ,  Justin A. Payne ,  Michael Heuken

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L33/02 ,  H01L33/16

Abstract: A light emitting device includes a silicon substrate having a (100) upper surface. The (100) upper surface has a recess, the recess being defined in part by (111) surfaces of the silicon substrate. The light emitting device includes a GaN crystal structure over one of the (111) surfaces which has a non-polar plane and a first surface along the non-polar plane. Light emission layers over the first surface have at least one quantum well comprising GaN.

Abstract translation: 发光器件包括具有（100）上表面的硅衬底。 （100）上表面具有凹部，凹部由硅衬底的（111）表面部分地限定。 发光器件包括在（111）表面之一上具有非极性平面和沿着非极性平面的第一表面的GaN晶体结构。 第一表面上的发光层具有至少一个包含GaN的量子阱。

公开(公告)号：US08217418B1

公开(公告)日：2012-07-10

申请号：US13026698

申请日：2011-02-14

Applicant: Shaoher X. Pan ,  Jay Chen ,  Justin Payne ,  Michael Heuken

Inventor： Shaoher X. Pan ,  Jay Chen ,  Justin Payne ,  Michael Heuken

IPC: H01L33/00

CPC classification number: H01L33/18 ,  H01L33/20 ,  H01L33/32

Abstract: A light emitting device includes a silicon substrate comprising a (111) surface and a GaN crystal structure over the (111) surface of the silicon substrate. The GaN crystal structure includes a first surface along a semi-polar plane of the GaN crystal structure and a second surface along a polar plane of the GaN crystal structure. The light emitting device also includes light emission layers over the first surface of the GaN crystal structure. The light emission layers include at least one quantum well comprising GaN.

Abstract translation: 发光器件包括在硅衬底的（111）表面上包括（111）表面和GaN晶体结构的硅衬底。 GaN晶体结构包括沿着GaN晶体结构的半极性平面的第一表面和沿着GaN晶体结构的极性平面的第二表面。 发光器件还包括在GaN晶体结构的第一表面上的发光层。 发光层包括至少一个包含GaN的量子阱。

公开(公告)号：US20110177636A1

公开(公告)日：2011-07-21

申请号：US12782080

申请日：2010-05-18

Applicant: Shaoher X. Pan ,  Jay Chen

Inventor： Shaoher X. Pan ,  Jay Chen

IPC: H01L21/50 ,  H01L21/283

CPC classification number: H01L33/24 ,  H01L33/0079 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating a light emitting device includes forming a trench in a first surface on a first side of a substrate. The trench comprises a first sloped surface not parallel to the first surface, wherein the substrate has a second side opposite to the first side of the substrate. The method also includes forming light emission layers over the first trench surface and the first surface, wherein the light emission layer is configured to emit light and removing at least a portion of the substrate from the second side of the substrate to form a protrusion on the second side of the substrate to allow the light emission layer to emit light out of the protrusion on the second side of the substrate.

Abstract translation: 一种制造发光器件的方法包括在衬底的第一侧上的第一表面中形成沟槽。 所述沟槽包括不平行于所述第一表面的第一倾斜表面，其中所述基底具有与所述基底的第一侧相对的第二侧。 该方法还包括在第一沟槽表面和第一表面上形成发光层，其中发光层被配置为发射光，并且从衬底的第二侧去除衬底的至少一部分以在衬底的第二侧上形成突出部 基板的第二面，以允许发光层从基板的第二面上的突出部发出光。

公开(公告)号：US20110108800A1

公开(公告)日：2011-05-12

申请号：US12999134

申请日：2008-06-24

Applicant: Shaoher X. Pan

Inventor： Shaoher X. Pan

IPC: H01L29/66 ,  H01L33/04

CPC classification number: H01L33/007 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02502 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/16

Abstract: A semiconductor device includes a substrate comprising a first surface having a first orientation and a second surface having a second orientation and a plurality of III-V nitride layers on the substrate, wherein the plurality of III-V nitride layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V nitride layers.

Abstract translation: 半导体器件包括：衬底，其包括具有第一取向的第一表面和具有第二取向的第二表面和在衬底上的多个III-V族氮化物层，其中所述多个III-V族氮化物层被配置为当 在多个III-V族氮化物层中的一个或多个中产生电流。

公开(公告)号：US07884021B2

公开(公告)日：2011-02-08

申请号：US11679767

申请日：2007-02-27

Applicant: Shaoher X. Pan ,  Chii Guang Lee

Inventor： Shaoher X. Pan ,  Chii Guang Lee

IPC: H01L21/4757

CPC classification number: B29D11/00596 ,  B29C59/14 ,  G02B26/0833

Abstract: A method for fabricating a micro structure includes disposing a sacrificial material in a recess formed in a lower layer and forming a layer of compensatory material on the sacrificial material in the recess. The compensatory material is higher than the upper surface of the lower layer. A first portion of the compensatory material is removed to form a substantially flat surface on the sacrificial material. The substantially flat surface is substantially co-planar with the upper surface of the lower layer. An upper layer is formed on the lower layer and the substantially flat surface.

Abstract translation: 一种用于制造微结构的方法包括将牺牲材料设置在形成在下层中的凹陷中并在凹陷中的牺牲材料上形成补偿材料层。 补偿材料高于下层的上表面。 去除补偿材料的第一部分以在牺牲材料上形成基本平坦的表面。 基本平坦的表面与下层的上表面基本上共面。 上层形成在下层和基本平坦的表面上。

公开(公告)号：US20100308300A1

公开(公告)日：2010-12-09

申请号：US12480463

申请日：2009-06-08

Applicant: Shaoher X. Pan

Inventor： Shaoher X. Pan

IPC: H01L33/00 ,  H01L21/66 ,  H01L21/78

CPC classification number: H01L33/24 ,  B82Y20/00 ,  H01L2924/0002 ,  H01S5/2237 ,  H01S5/24 ,  H01S5/34333 ,  H01L2924/00

Abstract: An integrated circuit device, which can be a light emission device such as a light emitting diode (LED), comprises a substrate, a plurality of device layers formed on a first surface of the substrate, including a first device layer and a second device layer, a first electrode formed on the first device layer, and a second electrode formed on a second surface of the substrate which is parallel and opposite to the first surface of the substrate. A plurality of substantially identical such devices can formed on a semiconductor wafer, where one or both of the first and second electrodes are shared by the plurality of devices prior to dicing the wafer. All of the devices can be tested simultaneously on the wafer, prior to dicing. Formation of the electrodes on opposite sides of the substrate allow the device to be directly connected to a mounting substrate, without any wire bonding.

Abstract translation: 可以是诸如发光二极管（LED）的发光器件的集成电路器件包括衬底，形成在衬底的第一表面上的多个器件层，包括第一器件层和第二器件层 形成在所述第一器件层上的第一电极，以及形成在所述衬底的与所述衬底的第一表面平行并相对的第二表面上的第二电极。 多个基本相同的这样的器件可以形成在半导体晶片上，其中第一和第二电极在切割晶片之前由多个器件共享。 在切割之前，可以在晶片上同时测试所有器件。 在基板的相对侧上形成电极，使得器件能够直接连接到安装基板，而不需要任何引线接合。

公开(公告)号：US07709940B2

公开(公告)日：2010-05-04

申请号：US11379932

申请日：2006-04-24

Applicant: Shaoher X. Pan ,  Wald Siskens

Inventor： Shaoher X. Pan ,  Wald Siskens

IPC: H01L23/02

CPC classification number: H01L23/04 ,  B81C1/00293 ,  B81C2203/0109 ,  H01L23/10 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A packaged die includes a substrate having an upper surface and a micro device on the upper surface and an encapsulation cover comprising one or more grooves on its lower surface. The lower surface of the encapsulation cover and the upper surface of the substrate are bonded together to form a plurality of air-tight closed-loop interfaces and encapsulate the micro device.

Abstract translation: 包装的模具包括在上表面上具有上表面和微器件的衬底和在其下表面上包括一个或多个凹槽的封装盖。 封装盖的下表面和基板的上表面结合在一起以形成多个气密闭环接口并封装微型器件。

公开(公告)号：US07667885B2

公开(公告)日：2010-02-23

申请号：US12110056

申请日：2008-04-25

Applicant: Shaoher X. Pan

Inventor： Shaoher X. Pan

IPC: G02B26/00

CPC classification number: G02B26/0841 ,  G02B26/0833

Abstract: A high contrast spatial light modulator for display and printing is fabricated by coupling a high active reflection area fill-ratio and non-diffractive micro-mirror array with a high electrostatic efficiency and low surface adhesion control substrate.

Abstract translation: 通过将高有效反射区域填充率和非衍射微镜阵列与高静电效率和低表面粘附控制基板耦合来制造用于显示和印刷的高对比度空间光调制器。

公开(公告)号：US20090298212A1

公开(公告)日：2009-12-03

申请号：US12537102

申请日：2009-08-06

Applicant: Shaoher X. Pan

Inventor： Shaoher X. Pan

IPC: H01L33/00

CPC classification number: H01L33/007 ,  B82Y20/00 ,  H01L33/12 ,  H01S5/34333 ,  H01S2301/173

Abstract: A semiconductor device includes a substrate comprising a first surface having a first orientation and a second surface having a second orientation and a plurality of III-V compound layers on the substrate, wherein the plurality of III-V compound layers are configured to emit light when an electric current is produced in one or more of the plurality of III-V compound layers.

Abstract translation: 一种半导体器件包括：衬底，其包括具有第一取向的第一表面和具有第二取向的第二表面和在所述衬底上的多个III-V化合物层，其中所述多个III-V化合物层被配置为当 在多个III-V化合物层中的一个或多个中产生电流。

公开(公告)号：US07618835B2

公开(公告)日：2009-11-17

申请号：US12126832

申请日：2008-05-23

Applicant: Shaoher X. Pan

Inventor： Shaoher X. Pan

IPC: H01L21/00

CPC classification number: G02B26/0841 ,  G02B26/0833

Abstract: A high contrast spatial light modulator for display and printing is fabricated by coupling a high active reflection area fill-ratio and non-diffractive micro-mirror array with a high electrostatic efficiency and low surface adhesion control substrate.

Abstract translation: 通过将高有效反射区域填充率和非衍射微镜阵列与高静电效率和低表面粘附控制基板耦合来制造用于显示和印刷的高对比度空间光调制器。