公开(公告)号：US5728630A

公开(公告)日：1998-03-17

申请号：US743190

申请日：1996-11-05

申请人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

发明人： Hiroyuki Nishimura ,  Hiroshi Adachi ,  Etsushi Adachi ,  Shigeyuki Yamamoto ,  Shintaro Minami ,  Shigeru Harada ,  Toru Tajima ,  Kimio Hagi

IPC分类号： H01L21/3205 ,  B32B27/08 ,  C08G77/16 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/31

CPC分类号： H01L21/02137 ,  B32B27/08 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044

摘要： In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

摘要翻译： 在半导体器件及其制造方法中，树脂膜形成具有多层互连结构的半导体器件的中间膜，并且仅使用包含由以下化学式表示的硅树脂聚合物的涂布液形成一个涂层：（HO ）2（R2Si2O3）nH2。 结果，可以提高电特性等的长期可靠性，并且简化工艺。

公开(公告)号：US5362686A

公开(公告)日：1994-11-08

申请号：US65305

申请日：1993-05-24

申请人： Shigeru Harada

发明人： Shigeru Harada

IPC分类号： H01L21/318 ,  C23C16/30 ,  C23C16/40 ,  H01L21/31 ,  H01L21/314 ,  H01L23/29 ,  H01L21/02

CPC分类号： H01L23/291 ,  H01L21/3144 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/181

摘要： A semiconductor device having a protective insulating film is disclosed. This semiconductor device includes a semiconductor substrate, and an interconnection pattern provided on said semiconductor substrate and electrically connected with said elements. A silicon-oxy-nitride film is provided on said semiconductor substrate so as to cover said interconnection pattern. The silicon-oxy-nitride film is deposited in accordance with a chemical vapor deposition Method using plasma, using a mixture gas including organic silane and a nitriding gas and has therefore superior step coverage. The silicon-oxy-nitride film has a superior barrier characteristic to moisture coming in from the outside. A semiconductor device superior in reliability such as moisture resistance is thus obtained.

摘要翻译： 公开了一种具有保护绝缘膜的半导体器件。 该半导体器件包括半导体衬底和设置在所述半导体衬底上并与所述元件电连接的互连图案。 在所述半导体衬底上设置硅 - 氮化物膜以覆盖所述互连图案。 使用包括有机硅烷和氮化气体的混合气体，使用等离子体的化学气相沉积法沉积硅 - 氮化物膜，因此具有优异的台阶覆盖率。 硅 - 氮化物膜对从外部进入的水分具有优异的阻挡特性。 因此获得了耐湿性等可靠性优异的半导体装置。

公开(公告)号：US5312775A

公开(公告)日：1994-05-17

申请号：US9180

申请日：1993-01-26

申请人： Hiroyuki Fujii ,  Shigeru Harada

发明人： Hiroyuki Fujii ,  Shigeru Harada

IPC分类号： H01L21/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L21/283

CPC分类号： H01L21/76814 ,  H01L21/76805 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76858 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10S257/915

摘要： A semiconductor device having a multilayer interconnection structure includes a tungsten plug buried in a contact hole formed in an interlayer insulating film covering first aluminum interconnection with a first titanium film and a first titanium nitride film interposed therebetween, and second aluminum interconnection formed thereon with a second titanium film and a second titanium nitride film interposed therebetween. According to this structure, remaining particles of an alterated layer of aluminum formed on the surface of the first aluminum interconnection are removed, and the first aluminum interconnection reacts with the first titanium film to form an intermetallic compound, so that mixing of the interface between them is carried out. Coverage of the contact hole is improved by burying the tungsten plug.

摘要翻译： 具有多层互连结构的半导体器件包括埋置在形成于层间绝缘膜中的接触孔中的钨丝塞，该层间绝缘膜覆盖与第一钛膜和第一钛氮化物膜之间的第一铝互连，并且其上形成有第二铝互连 钛膜和介于其间的第二氮化钛膜。 根据该结构，除去在第一铝互连体的表面上形成的铝层的剩余粒子，并且第一铝互连与第一钛膜反应形成金属间化合物，使得它们之间的界面混合 完成了。 通过埋入钨丝塞来改善接触孔的覆盖范围。

公开(公告)号：US5270253A

公开(公告)日：1993-12-14

申请号：US719109

申请日：1991-06-24

申请人： Hajime Arai ,  Isao Furuta ,  Hidefumi Kuroki ,  Junichi Arima ,  Yoshihiro Hirata ,  Shigeru Harada

发明人： Hajime Arai ,  Isao Furuta ,  Hidefumi Kuroki ,  Junichi Arima ,  Yoshihiro Hirata ,  Shigeru Harada

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/532 ,  H01L21/44

CPC分类号： H01L23/5328 ,  H01L23/53209 ,  H01L24/02 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  Y10S148/026

摘要： A semiconductor device which includes an electrode portion formed on a wafer; a passivation film deposited on said wafer except for said electrode portion; an insulating film deposited only on said passivation film so as to have a predetermined thickness and so as to include a concave portion over said electrode portion; and conductive material embedded in said concave portion at least up to the height of said insulating film, wherein the conductive material is intended to be used for bonding to a substrate.

摘要翻译： 一种半导体器件，包括形成在晶片上的电极部分; 除了所述电极部分之外沉积在所述晶片上的钝化膜; 仅在所述钝化膜上沉积以便具有预定厚度并且在所述电极部分上包括凹部的绝缘膜; 以及嵌入所述凹部中的导电材料至少高达所述绝缘膜的高度，其中所述导电材料旨在用于与基底结合。

公开(公告)号：US5260604A

公开(公告)日：1993-11-09

申请号：US508507

申请日：1990-04-12

申请人： Shigeru Harada ,  Hisao Masuda ,  Reiji Tamaki

发明人： Shigeru Harada ,  Hisao Masuda ,  Reiji Tamaki

IPC分类号： H01L23/532 ,  H02L23/48

CPC分类号： H01L23/53219 ,  H01L23/532 ,  H01L2924/0002

摘要： In a semiconductor device, an impurity diffused layer serving as an active region is formed in a predetermined region of the surface of a semiconductor substrate of silicon, an underlayer insulating film is formed on the semiconductor substrate for the purpose of protecting and stabilizing the surface of the semiconductor substrate, and an interconnection electrically connected to the impurity diffused layer through a contact hole and formed on an Al-Si-Sn alloy, an Al-Si-Sb alloy or alloys having Ti added to the respective alloys, so that occurrence of an alloy pit and a silicon nodule is prevented. In addition, a completed protective film is formed on the interconnection and the underlayer insulating film and an aperture in a bonding pad region is formed in a predetermined region of the completed protective film, so that the interconnection and the bonding pad are electrically connected to each other. The proportion of silicon and other materials in the alloy are controlled to simultaneously avoid alloy pit and silicon nodule defects both at the contact hole and throughout the alloy conductor.

摘要翻译： 在半导体器件中，在硅的半导体衬底的表面的预定区域中形成用作有源区的杂质扩散层，为了保护和稳定表面的目的，在半导体衬底上形成下层绝缘膜 半导体衬底以及通过接触孔与杂质扩散层电连接并且在Al-Si-Sn合金，Al-Si-Sb合金或其合金上添加有Ti的合金形成的互连，从而发生 防止了合金凹坑和硅结节。 此外，在互连和下层绝缘膜上形成完整的保护膜，并且在完成的保护膜的预定区域中形成焊盘区域中的孔，使得互连和焊盘与每个 其他。 控制合金中硅和其他材料的比例，以同时避免接触孔和整个合金导体中的合金凹坑和硅结节缺陷。

公开(公告)号：US5260600A

公开(公告)日：1993-11-09

申请号：US704422

申请日：1991-05-23

申请人： Shigeru Harada

发明人： Shigeru Harada

IPC分类号： H01L21/318 ,  C23C16/30 ,  C23C16/40 ,  H01L21/31 ,  H01L21/314 ,  H01L23/29 ,  H01L23/28

CPC分类号： H01L23/291 ,  H01L21/3144 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/181

摘要： A semiconductor device having a protective insulating film is disclosed. This semiconductor device includes a semiconductor substrate, and an interconnection pattern provided on said semiconductor substrate and electrically connected with said elements. A silicon-oxy-nitride film is provided on said semiconductor substrate so as to cover said interconnection pattern. The silicon-oxy-nitride film is deposited in accordance with a chemical vapor deposition Method using plasma, using a mixture gas including organic silane and a nitriding gas and has therefore superior step coverage. The silicon-oxy-nitride film has a superior barrier characteristic to moisture coming in from the outside. A semiconductor device superior in reliability such as moisture resistance is thus obtained.

摘要翻译： 公开了一种具有保护绝缘膜的半导体器件。 该半导体器件包括半导体衬底和设置在所述半导体衬底上并与所述元件电连接的互连图案。 在所述半导体衬底上设置硅 - 氮化物膜以覆盖所述互连图案。 使用包括有机硅烷和氮化气体的混合气体，使用等离子体的化学气相沉积法沉积硅 - 氮化物膜，因此具有优异的台阶覆盖率。 硅 - 氮化物膜对从外部进入的水分具有优异的阻挡特性。 因此获得了耐湿性等可靠性优异的半导体装置。

公开(公告)号：US4896204A

公开(公告)日：1990-01-23

申请号：US224172

申请日：1988-07-25

申请人： Yoshihiro Hirata ,  Reiji Tamaki ,  Takeshi Noguchi ,  Junichi Arima ,  Kenji Saitoh ,  Shigeru Harada

发明人： Yoshihiro Hirata ,  Reiji Tamaki ,  Takeshi Noguchi ,  Junichi Arima ,  Kenji Saitoh ,  Shigeru Harada

IPC分类号： H01L23/522 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L23/53223 ,  H01L23/5329 ,  H01L2924/0002

摘要： An Al layer (6) is first formed to cover an opening region (9) for interconnection in a semiconductor device. Then, an Al-Si-Ti layer (7) having a higher degree of hardness than that of the Al layer (6) is formed on the Al layer (6) and subsequently a mixture layer (8) of aluminum hydrate and aluminum oxide is formed on the surface of the Al-Si-Ti layer (7). Thus, a multilayered film of electrode and interconnection (11) is formed.

摘要翻译： 首先形成Al层（6）以覆盖用于半导体器件中的互连的开口区域（9）。 然后，在Al层（6）上形成硬度比Al层（6）高的Al-Si-Ti层（7），随后形成水合铝和氧化铝的混合层（8） 形成在Al-Si-Ti层（7）的表面上。 因此，形成电极和互连（11）的多层膜。

公开(公告)号：US4555064A

公开(公告)日：1985-11-26

申请号：US573888

申请日：1984-01-25

申请人： Juichi Asano ,  Yasuo Okubo ,  Hiroshi Saito ,  Shigeru Harada

发明人： Juichi Asano ,  Yasuo Okubo ,  Hiroshi Saito ,  Shigeru Harada

IPC分类号： E21D9/08 ,  B02C7/06 ,  B02C7/12 ,  E21B7/00 ,  E21B7/20 ,  E21B10/42 ,  E21B21/12 ,  E21D9/11 ,  E21D9/12 ,  B02C18/16

CPC分类号： B02C7/06 ,  B02C7/12 ,  E21B10/42 ,  E21B21/12 ,  E21B7/00 ,  E21B7/208 ,  E21D9/112

摘要： A pebble-stone crushing device for use in an excavator for laying pipelines underground has a plurality of rotor teeth formed integrally with the rear face of a cutter head which is mounted in the most front part of an excavator body to excavate a working face in front thereof, and a plurality of stator teeth formed radially on and integrally with an annular front face plate of said excavator body so as to cooperate with said rotor teeth. The stator teeth comprises plural groups of radially spaced apart tooth members having different length. Further, the tooth members comprises groups of comparatively long main tooth members and groups of comparatively short auxiliary tooth members each being disposed, respectively, between every adjacent two main tooth members.

摘要翻译： 用于挖掘机在地下铺设管道的挖泥机中使用的卵石破碎装置具有多个转子齿，其与安装在挖掘机主体的最前部的刀头的后表面一体形成，以在前面挖掘工作面 以及多个定子齿，其与所述挖掘机主体的环形前面板径向形成一体，以与所述转子齿配合。 定子齿包括具有不同长度的多组径向间隔开的齿构件。 此外，齿构件包括相对较长的主齿构件组和相对较短的副齿构件的组，各组分别设置在每个相邻的两个主齿构件之间。