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93 条记录 (耗时 0.027 秒)

    Device for electrically heating a vertically erect chamber
    76.
    发明申请
    Device for electrically heating a vertically erect chamber 失效
    用于电加热垂直竖立室的装置

    公开(公告)号：US20050236393A1

    公开(公告)日：2005-10-27

    申请号：US10481762

    申请日：2002-04-09

    申请人： Heiko Herold ,  Gunter Holdenried ,  Leslaw Mleczko ,  Matthias Pfaffelhuber ,  Theo Konig

    发明人： Heiko Herold ,  Gunter Holdenried ,  Leslaw Mleczko ,  Matthias Pfaffelhuber ,  Theo Konig

    IPC分类号： F24H3/08 ,  F24H9/18 ,  H05B3/02

    CPC分类号： F24H9/1863 ,  F24H3/081

    摘要： The invention relates to a device for electrically heating a vertically erect chamber, for example, a reactor, to high temperatures (≧1000° C.) and/or with high power (30 to 1000 kW per zone), comprising several heating zones arranged vertically one above the other. The components of the de- vice, with the exception of the insulating components, are made from graphite materials. The aim of the invention is to embody and develop the device such that the largest possible degree of stability and functional capability for the whole device is achieved with low constructional complexity. The device should in particular be capable of heating very tall chambers. The above is achieved in that each zone (Z) comprises a number of supports (1), arranged in an essentially even distribution around the chamber (R) for heating, which simultaneously serve as electrical supplies for the heater, and in that the heater for each zone (Z) is arranged such as to be fixed at one end thereof and longitudinally displaceable at the other end thereof.

    摘要翻译： 本发明涉及一种用于将垂直竖立室（例如电抗器）电加热至高温（> = 1000℃）和/或高功率（每区域30至1000千瓦）的装置，其包括几个加热区 垂直排列放置在另一个之上。 除了绝缘部件外，设备的部件由石墨材料制成。 本发明的目的是体现和开发该设备，使得整个设备的最大可能程度的稳定性和功能能力达到了低结构复杂性。 该设备应特别能够加热非常高的室。 上述实现的是，每个区域（Z）包括多个支撑件（1），其布置成围绕用于加热的室（R）的基本均匀的分布，其同时用作加热器的电源，并且加热器 每个区域（Z）布置成在其一端被固定并在其另一端可纵向移位。

    Method for production of high purity silicon
    77.
    发明授权
    Method for production of high purity silicon 失效

    公开(公告)号：US06887448B2

    公开(公告)日：2005-05-03

    申请号：US10450125

    申请日：2001-11-21

    申请人： Hans-Dieter Block ,  Leslaw Mleczko ,  Hans-Joachim Leimkühler ,  Rainer Weber ,  Knud Werner ,  Dietmar Schwanke ,  Johannes-Peter Schäfer ,  Gebhard Wagner

    发明人： Hans-Dieter Block ,  Leslaw Mleczko ,  Hans-Joachim Leimkühler ,  Rainer Weber ,  Knud Werner ,  Dietmar Schwanke ,  Johannes-Peter Schäfer ,  Gebhard Wagner

    IPC分类号： C01B33/029 ,  C01B33/039 ,  H01L31/18 ,  C01B33/02

    CPC分类号： C01B33/029 ,  C01B33/039 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P20/127 ,  Y02P70/521

    摘要： The invention relates to a method for the production of high purity silicon, characterized by the following steps: a) reaction of metallic silicon with silicon tetrachloride (SiCl4), hydrogen (H2) and hydrochloric acid (HCl) at a temperature of 500 to 800° C. and a pressure of 25 to 40 bar to give a trichlorosilane-containing (SiHCl3) feed gas stream, b) removal of impurities from the resultant trichlorosilane-containing feed gas stream by scrubbing with condensed chlorosilanes at a pressure of 25 to 40 bar and a temperature of 160 to 200° C. in a multi-stage distillation column, to give a purified trichlorosilane-containing feed gas stream and a solid-containing chlorosilane suspension and a distillative separation of the purified feed gas stream into a partial stream essentially comprising SiCl4 and a partial stream, essentially comprising SiHCl3, c) disproportionation of the SiHCl3-containing partial stream to give SiCl4 and SiH4, whereby the disproportionation is carried out in several reactive/distillative reaction zones, with a counter-current of vapour and liquid, on catalytic solids at a pressure of 500 mbar to 50 bar and SiHCl3 is introduced into a first reaction zone, the lower boiling SiH4-containing disproportionation product produced there undergoes an intermediate condensation in a temperature range of −25° C. to 50° C., the non-condensing SiH4-containing product mixture is fed to one or more further reactive/distillative reaction zones and the lower boiling product thus generated, containing a high proportion of SiH4 is completely or partially condensed in the head condenser and d) thermal decomposition of the SiH4 to give high purity silicon.