公开(公告)号：US08425833B2

公开(公告)日：2013-04-23

申请号：US13340973

申请日：2011-12-30

Applicant: Brad Lemon ,  Joseph Hirt ,  Timothy Welling ,  James G. Daily, III ,  David Meendering ,  Gary Rozak ,  Jerome O'Grady ,  Peter R. Jepson ,  Prabhat Kumar ,  Steven A. Miller ,  Richard Wu ,  David G. Schwarz

Inventor： Brad Lemon ,  Joseph Hirt ,  Timothy Welling ,  James G. Daily, III ,  David Meendering ,  Gary Rozak ,  Jerome O'Grady ,  Peter R. Jepson ,  Prabhat Kumar ,  Steven A. Miller ,  Richard Wu ,  David G. Schwarz

IPC: B22F3/12 ,  B22F3/24 ,  B22F3/20 ,  C22C27/04

CPC classification number: C23C14/3414 ,  B22F1/0003 ,  B22F3/16 ,  B22F3/162 ,  B22F3/24 ,  B22F5/006 ,  B22F2003/248 ,  B22F2301/20 ,  B22F2998/00 ,  B22F2998/10 ,  C21D8/0221 ,  C21D8/0247 ,  C22C1/045 ,  C22C27/04 ,  C22F1/18 ,  C23C14/14 ,  C23C14/3478 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/46 ,  B22F3/172 ,  B22F3/20 ,  B22F3/04 ,  B22F3/10

Abstract: In various embodiments, tubular sputtering targets are produced by forming a tubular billet at least by pressing molybdenum powder in a mold and sintering the pressed molybdenum powder, working the tubular billet to form a worked billet, and heat treating the worked billet.

Abstract translation: 在各种实施方案中，管状溅射靶通过至少通过在模具中挤压钼粉末并烧结压制的钼粉末，加工管状坯料以形成加工的坯料并且对加工的坯料进行热处理而形成管状坯料来生产。

公开(公告)号：US08246903B2

公开(公告)日：2012-08-21

申请号：US12206944

申请日：2008-09-09

Applicant: Steven A. Miller ,  Mark Gaydos ,  Leonid N. Shekhter ,  Gokce Gulsoy

Inventor： Steven A. Miller ,  Mark Gaydos ,  Leonid N. Shekhter ,  Gokce Gulsoy

IPC: B22F3/12

CPC classification number: B05D1/12 ,  B22F3/003 ,  B22F7/04 ,  B22F9/20 ,  B22F2999/00 ,  C23C24/04 ,  B22F1/0088 ,  B22F2201/10

Abstract: Refractory metal powders are dehydrided in a device which includes a preheat chamber for retaining the metal powder fully heated in a hot zone to allow diffusion of hydrogen out of the powder. The powder is cooled in a cooling chamber for a residence time sufficiently short to prevent re-absorption of the hydrogen by the powder. The powder is consolidated by impact on a substrate at the exit of the cooling chamber to build a deposit in solid dense form on the substrate.

Abstract translation: 耐火金属粉末在包括用于保持在热区域中完全加热的金属粉末的预热室的装置中脱水以允许氢从粉末中扩散出来。 粉末在冷却室中冷却，停留时间足够短以防止粉末再次吸收氢气。 粉末通过在冷却室的出口处的基底上冲击而固结，以在基体上以固体致密形式沉积。

公开(公告)号：US20120189483A1

公开(公告)日：2012-07-26

申请号：US13340973

申请日：2011-12-30

Applicant: Brad Lemon ,  Joseph Hirt ,  Timothy Welling ,  James G. Daily, III ,  David Meendering ,  Gary Rozak ,  Jerome O'Grady ,  Peter R. Jepson ,  Prabhat Kumar ,  Steven A. Miller ,  Richard Wu ,  David G. Schwarz

Inventor： Brad Lemon ,  Joseph Hirt ,  Timothy Welling ,  James G. Daily, III ,  David Meendering ,  Gary Rozak ,  Jerome O'Grady ,  Peter R. Jepson ,  Prabhat Kumar ,  Steven A. Miller ,  Richard Wu ,  David G. Schwarz

IPC: B22F3/12 ,  B22F3/24 ,  B22F3/20

CPC classification number: C23C14/3414 ,  B22F1/0003 ,  B22F3/16 ,  B22F3/162 ,  B22F3/24 ,  B22F5/006 ,  B22F2003/248 ,  B22F2301/20 ,  B22F2998/00 ,  B22F2998/10 ,  C21D8/0221 ,  C21D8/0247 ,  C22C1/045 ,  C22C27/04 ,  C22F1/18 ,  C23C14/14 ,  C23C14/3478 ,  C23C14/3485 ,  C23C14/35 ,  C23C14/46 ,  B22F3/172 ,  B22F3/20 ,  B22F3/04 ,  B22F3/10

Abstract: In various embodiments, tubular sputtering targets are produced by forming a tubular billet at least by pressing molybdenum powder in a mold and sintering the pressed molybdenum powder, working the tubular billet to form a worked billet, and heat treating the worked billet.

Abstract translation: 在各种实施方案中，管状溅射靶通过至少通过在模具中挤压钼粉末并烧结压制的钼粉末，加工管状坯料以形成加工的坯料并且对加工的坯料进行热处理而形成管状坯料来生产。

公开(公告)号：US20110300396A1

公开(公告)日：2011-12-08

申请号：US13184665

申请日：2011-07-18

Applicant: Steven A. Miller ,  Leonid N. Shekhter ,  Stefan Zimmerman

Inventor： Steven A. Miller ,  Leonid N. Shekhter ,  Stefan Zimmerman

IPC: B22F7/04

CPC classification number: B23K31/02 ,  B23K2101/18 ,  B23K2101/34 ,  B23K2103/04 ,  B23K2103/05 ,  B23K2103/16 ,  B23K2103/166 ,  B32B38/08 ,  C23C24/04 ,  Y10T428/12076 ,  Y10T428/12347

Abstract: In various embodiments, a metallic structure includes first and second clad structures each comprising a protective layer disposed over a steel layer, a joint joining the steel layers of first and second clad structures, and, directly connecting the protective layers of the first and second clad structures, a layer of metal powder disposed in contact with (i) the joint, (ii) the protective layers of the first and second clad structures, and (iii) a portion of at least one of the steel layers proximate the joint.

Abstract translation: 在各种实施例中，金属结构包括第一和第二包覆结构，每个包层结构包括设置在钢层上的保护层，连接第一和第二包层结构的钢层的接头，以及直接连接第一和第二覆层的保护层 结构，与（i）接头接触设置的金属粉末层，（ii）第一和第二包覆结构的保护层，和（iii）靠近接头的至少一个钢层的一部分。

公开(公告)号：US20110132534A1

公开(公告)日：2011-06-09

申请号：US13026370

申请日：2011-02-14

Applicant: Steven A. Miller ,  Leonid N. Shekhter ,  Stefan Zimmerman

Inventor： Steven A. Miller ,  Leonid N. Shekhter ,  Stefan Zimmerman

IPC: B32B37/02 ,  B23K31/02 ,  B32B38/00

CPC classification number: B23K31/02 ,  B23K2101/18 ,  B23K2101/34 ,  B23K2103/04 ,  B23K2103/05 ,  B23K2103/16 ,  B23K2103/166 ,  B32B38/08 ,  C23C24/04 ,  Y10T428/12076 ,  Y10T428/12347

Abstract: The present invention is directed to a process for joining tantalum clad steel structures. The process broadly comprises: a) providing a first tantalum clad section, said first tantalum clad section comprising a tantalum layer over a steel layer, with a bonding layer optionally therebetween, with a portion of said steel layer in an edge region not being covered by said tantalum layer or said bonding layer, b) providing a second tantalum clad section, said second tantalum clad section comprising a tantalum layer over a. steel layer, with a bonding layer optionally therebetween, with a portion of said steel layer in an edge region not being covered by said tantalum layer or said bonding layer, c) locating said steel edge regions adjacent each other, d) welding the steel edge regions together, e) cold spraying a tantalum powder onto the welded edge regions and over the tantalum layers adjacent said edge regions thereby joining the tantalum clad steel sections. The invention is also directed to tantalum welds or joints formed by cold spraying tantalum powder.

Abstract translation: 本发明涉及一种用于接合钽复合钢结构的方法。 该方法广泛地包括：a）提供第一钽包层部分，所述第一钽包层部分包括在钢层上的钽层，任选地在其间具有粘结层，所述钢层在边缘区域中的一部分不被覆盖 所述钽层或所述接合层，b）提供第二钽包层部分，所述第二钽包层部分包括一层钽层。 钢层，任选地具有粘合层，所述钢层的边缘区域中的一部分不被所述钽层或所述粘合层覆盖，c）将所述钢边缘区域彼此相邻定位，d）将钢边缘 区域一起，e）将钽粉末冷却喷涂到焊接边缘区域上并且在邻近所述边缘区域的钽层上方，从而接合钽包层部分。 本发明还涉及通过冷喷钽粉形成的钽焊缝或接头。

公开(公告)号：US20080314737A1

公开(公告)日：2008-12-25

申请号：US12090919

申请日：2006-10-16

Applicant: Mark Gaydos ,  Prabhat Kumar ,  Steven A. Miller ,  Norman G. Mills ,  Gary Rozak ,  John Shields ,  Rong-Chein Richard Wu

Inventor： Mark Gaydos ,  Prabhat Kumar ,  Steven A. Miller ,  Norman G. Mills ,  Gary Rozak ,  John Shields ,  Rong-Chein Richard Wu

IPC: C23C14/00

CPC classification number: C23C14/3414 ,  B22F3/15 ,  B22F2998/00 ,  B22F2998/10 ,  C22C1/045 ,  B22F5/006 ,  B22F1/0003 ,  B22F3/02 ,  B22F3/1208 ,  B22F3/04

Abstract: Molybdenum titanium sputter targets are provided. In one aspect, the targets are substantially free of the β(Ti, Mo) alloy phase. In another aspect, the targets are substantially comprised of single phase β(Ti, Mo) alloy. In both aspects, particulate emission during sputtering is reduced. Methods of preparing the targets, methods of bonding targets together to produce large area sputter targets, and films produced by the targets, are also provided.

Abstract translation: 提供钼钛溅射靶。 在一个方面，靶基本上不含β（Ti，Mo）合金相。 另一方面，靶基本上由单相β（Ti，Mo）合金组成。 在这两个方面，溅射中的颗粒发射减少。 还提供了制备目标的方法，将靶标结合在一起以产生大面积溅射靶的方法，以及由靶产生的膜。

公开(公告)号：US20080216602A1

公开(公告)日：2008-09-11

申请号：US11935099

申请日：2007-11-05

Applicant: Stefan Zimmermann ,  Uwe Papp ,  Hans Keller ,  Steven A. Miller ,  Prabhat Kumar ,  Mark Gaydos ,  Rong-Chen Richard Wu

Inventor： Stefan Zimmermann ,  Uwe Papp ,  Hans Keller ,  Steven A. Miller ,  Prabhat Kumar ,  Mark Gaydos ,  Rong-Chen Richard Wu

IPC: C23C14/34 ,  C22C5/00 ,  C22C27/04 ,  C22C27/00 ,  C22C14/00 ,  C22C9/00 ,  C23C24/04 ,  H01J35/00

CPC classification number: H01J35/108 ,  B22F7/08 ,  C23C14/3414 ,  C23C24/04 ,  H01J35/08 ,  H01J2235/081 ,  H01J2235/083 ,  H01J2235/085 ,  Y10T29/4902

Abstract: Disclosed is a process for the reprocessing or production of a sputter target or an X-ray anode wherein a gas flow forms a gas/powder mixture with a powder of a material chosen from the group consisting of niobium, tantalum, tungsten, molybdenum, titanium, zirconium, mixtures of two or more thereof and alloys thereof with at least two thereof or with other metals, the powder has a particle size of 0.5 to 150 μm, wherein a supersonic speed is imparted to the gas flow and the jet of supersonic speed is directed on to the surface of the object to be reprocessed or produced.

Abstract translation: 公开了一种用于再处理或生产溅射靶或X射线阳极的方法，其中气流与选自铌，钽，钨，钼，钛的材料的粉末形成气体/粉末混合物 锆，其两种或多种的混合物及其至少两种或其中的金属或其它金属的混合物，所述粉末的粒度为0.5-150μm，其中超音速被赋予气流和超音速射流 被引导到待再处理或生产的物体的表面上。

公开(公告)号：US20080193798A1

公开(公告)日：2008-08-14

申请号：US11574469

申请日：2005-08-29

Applicant: Brad Lemon ,  Joseph Hirt ,  Timothy Welling ,  James G. Daily ,  David Meendering ,  Gary Rozak ,  Jerome O'Grady ,  Peter R. Jepson ,  Prabhat Kumar ,  Steven A. Miller ,  Richard Wu ,  Davd G. Schwarz

Inventor： Brad Lemon ,  Joseph Hirt ,  Timothy Welling ,  James G. Daily ,  David Meendering ,  Gary Rozak ,  Jerome O'Grady ,  Peter R. Jepson ,  Prabhat Kumar ,  Steven A. Miller ,  Richard Wu ,  Davd G. Schwarz

IPC: C23C14/34 ,  B22F3/14 ,  C22C27/04

CPC classification number: C22C1/045 ,  B22F3/162 ,  B22F2003/248 ,  B22F2998/00 ,  B22F2998/10 ,  C22C27/04 ,  C23C14/3414 ,  B22F3/172 ,  B22F3/20 ,  B22F3/04 ,  B22F3/10 ,  B22F3/16 ,  B22F3/24

Abstract: Molybdenum sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor—Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emitting Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.

Abstract translation: 钼溅射靶和烧结表征为没有或最小纹理条带或通过厚度梯度。 具有精细，均匀的晶粒尺寸以及均匀织构的钼溅射靶是高纯度的，并且可以微合金化以改善性能。 溅射靶可以是圆盘，正方形，矩形或管状，并且可以溅射以在基底上形成薄膜。 通过使用段形成方法，溅射靶的尺寸可以达到6m×5.5μm。 薄膜可以用于薄膜晶体管 - 液晶显示器，等离子体显示面板，有机发光二极管，无机发光二极管显示器，场发射显示器，太阳能电池，传感器，半导体器件和门装置等电子部件中 CMOS（互补金属氧化物半导体）具有可调功能。

公开(公告)号：US20080078268A1

公开(公告)日：2008-04-03

申请号：US11542055

申请日：2006-10-03

Applicant: Leonid N. Shekhter ,  Rong-Chein Richard Wu ,  Steven A. Miller ,  Leah F. Haywiser

Inventor： Leonid N. Shekhter ,  Rong-Chein Richard Wu ,  Steven A. Miller ,  Leah F. Haywiser

IPC: B22F9/20

CPC classification number: B22F1/0088 ,  B05D1/12 ,  B05D2401/32 ,  B22F1/0085 ,  B22F2999/00 ,  C23C24/04 ,  B22F2201/10 ,  B22F2202/13 ,  B22F9/20

Abstract: The present invention is directed to a process for the preparation of a metal powder having a purity at least as high as the starting powder and having an oxygen content of 10 ppm or less comprising heating said metal powder containing oxygen in the form of an oxide, with the total oxygen content being from 50 to 3000 ppm, in an inert atmosphere at a pressure of from 1 bar to 10−7 to a temperature at which the oxide of the metal powder becomes thermodynamically unstable and removing the resulting oxygen via volatilization. The metal powder is preferably selected from the group consisting of tantalum, niobium, molybdenum, hafnium, zirconium, titanium, vanadium, rhenium and tungsten. The invention also relates to the powders produced by the process and the use of such powders in a cold spray process.

Abstract translation: 本发明涉及制备纯度至少与起始粉末一样高且氧含量为10ppm以下的金属粉末的方法，包括加热含氧形式的氧的金属粉末， 总氧含量为50-3000ppm，在惰性气氛中，压力为1巴-10-7℃至金属粉末的氧化物变得热力学不稳定并除去 所产生的氧气通过挥发。 金属粉末优选选自钽，铌，钼，铪，锆，钛，钒，铼和钨。 本发明还涉及通过该方法生产的粉末和在冷喷涂方法中使用这种粉末。

公开(公告)号：US6106739A

公开(公告)日：2000-08-22

申请号：US473866

申请日：1999-12-28

Applicant: Matthew D. Stephens ,  Steven A. Miller ,  Jessica Belcher

Inventor： Matthew D. Stephens ,  Steven A. Miller ,  Jessica Belcher

IPC: B22F9/08 ,  C30B11/00 ,  C30B29/66 ,  C30B30/08 ,  H01L31/0352 ,  H01L31/18 ,  B32B1/00 ,  C30B9/60

CPC classification number: C30B29/06 ,  B22F9/08 ,  C30B11/00 ,  C30B29/60 ,  C30B30/08 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/184 ,  B22F2998/00 ,  B22F2999/00 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/902 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1092 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2993

Abstract: An apparatus and a method for producing single crystal semiconductor particulate in near spherical shape and the particulate product so formed is accomplished by producing uniform, monosized, near spherical droplets; identifying the position of an undercooled droplet in a nucleation zone; and seeding the identified droplet in the nucleation zone to initiate single crystal growth in the droplet.