公开(公告)号：US20190273203A1

公开(公告)日：2019-09-05

申请号：US16190695

申请日：2018-11-14

Applicant: TDK CORPORATION ,  NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA ,  Tetsuya UEMURA

IPC: H01L43/10 ,  H01L43/02

Abstract: A magnetoresistive effect element according to the present disclosure includes: a first ferromagnetic layer serving as a magnetization free layer; a second ferromagnetic layer serving as a magnetization fixed layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer contains a Heusler alloy represented by Formula (1): X2MnαZβ . . . (1) where X represents at least one element selected from the group consisting of Co, Ni, Fe, Ru, and Rh, and Z represents at least one element selected from the group consisting of Si, Al, Ga, Ge, Sb, and Sn, and ⅔

公开(公告)号：US20190259937A1

公开(公告)日：2019-08-22

申请号：US16275947

申请日：2019-02-14

Applicant: TDK CORPORATION ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Shinto ICHIKAWA ,  Katsuyuki NAKADA ,  Seiji MITANI ,  Hiroaki SUKEGAWA ,  Kazuhiro HONO ,  Tadakatsu OHKUBO

IPC: H01L43/10 ,  H01L43/12

Abstract: Provided is a magnetoresistance effect element in which a tunnel barrier layer stably has a cation disordered spinel structure. This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer disposed between the first ferromagnetic layer and the second ferromagnetic layer. In addition, the tunnel barrier layer is an oxide of MgxAl1-x (0≤x

公开(公告)号：US20190181333A1

公开(公告)日：2019-06-13

申请号：US16081192

申请日：2018-01-17

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA

IPC: H01L43/10 ,  H01L43/02 ,  H01F10/32

Abstract: A magnetoresistive effect element, which includes: a first ferromagnetic layer as a magnetization fixed layer; a second ferromagnetic layer as a magnetization free layer; and a nonmagnetic spacer layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The nonmagnetic spacer layer includes an Ag alloy represented by General Formula (1), and thereby lattice mismatch between the nonmagnetic spacer layer, and the first ferromagnetic layer and/or the second ferromagnetic layer is reduced, compared to lattice mismatch when the nonmagnetic spacer layer is formed of Ag, AgγX1-γ  (1) where X indicates one element selected from the group made of Al, Cu, Ga, Ge, As, Y, La, Sm, Yb, and Pt, and 0

公开(公告)号：US20190006074A1

公开(公告)日：2019-01-03

申请号：US16020373

申请日：2018-06-27

Applicant: TDK CORPORATION

Inventor： Kazuumi INUBUSHI ,  Katsuyuki NAKADA ,  Tomoyuki SASAKI

IPC: H01F10/32 ,  H01L43/02 ,  H03H11/04 ,  H01L43/10 ,  H03B15/00 ,  G11B5/39 ,  G01R33/09

CPC classification number: H01F10/3259 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/329 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006 ,  H03H2/00 ,  H03H11/04

Abstract: There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe2TiSi.

公开(公告)号：US20180351088A1

公开(公告)日：2018-12-06

申请号：US15993712

申请日：2018-05-31

Applicant: TDK CORPORATION

Inventor： Eiji SUZUKI ,  Katsuyuki NAKADA ,  Shogo YONEMURA

IPC: H01L43/08 ,  H01L43/10 ,  H01F10/32

CPC classification number: H01L43/08 ,  H01F10/3268 ,  H01L43/10

Abstract: A laminated structure according to an embodiment includes: a ferromagnetic layer; and a multiferroic layer formed on one surface of the ferromagnetic layer, wherein the multiferroic layer includes a first region having a tetragonal crystal located on a surface side on the ferromagnetic layer side and a second region having a rhombohedral crystal located further inside than the first region.

公开(公告)号：US20180287037A1

公开(公告)日：2018-10-04

申请号：US15924828

申请日：2018-03-19

Applicant: TDK CORPORATION

Inventor： Kazuya MAEKAWA ,  Makoto SHIBATA ,  Katsuyuki NAKADA ,  Yohei SHIOKAWA ,  Kazuumi INUBUSHI

IPC: H01L35/32 ,  H01L35/22 ,  H01L35/20

Abstract: A laminate includes, on a substrate, a first buffer layer substantially made of zirconium oxide or stabilized zirconia, a second buffer layer substantially made of yttrium oxide, a metal layer substantially made of at least one among platinum, iridium, palladium, rhodium, vanadium, chromium, iron, molybdenum, tungsten, aluminum, silver, gold, copper, and nickel, and a magnesium oxide layer substantially made of magnesium oxide, in this order.

公开(公告)号：US20150228394A1

公开(公告)日：2015-08-13

申请号：US14613852

申请日：2015-02-04

Applicant: TDK CORPORATION

Inventor： Katsuyuki NAKADA ,  Takahiro SUWA ,  Kuniyasu ITO ,  Takumi AOKI ,  Tetsuya SHIBATA

IPC: H01F27/245

CPC classification number: H01F10/3268 ,  G11B5/127 ,  G11C11/161 ,  H01F3/10 ,  H01F7/20 ,  H01L43/08

Abstract: A magnetic element including a magnetoresistive effect film (MEF). Magnetic element includes an MEF and nonmagnetic spacer layer, first and second ferromagnetic layers, wherein layers being disposed with nonmagnetic spacer layer interposed therebetween, pair of electrodes disposed with MEF interposed therebetween in stacking direction of MEF at least two first soft magnetic layers, coil, and second soft magnetic layer magnetically connected to coil, wherein second soft magnetic layer has ring-like shape, spacing distance between second soft magnetic layer and MEF is larger than first soft magnetic layer and MEF, film thickness of second soft magnetic layer is larger than first soft magnetic layer, part of the two first soft magnetic layers overlaps a part of second soft magnetic layer in stacking direction of MEF, first and second soft magnetic layers are magnetically coupled to each other, and MEF is disposed between respective fore ends of two first soft magnetic layers.

Abstract translation: 包括磁阻效应膜（MEF）的磁性元件。 磁性元件包括MEF和非磁性间隔层，第一和第二铁磁层，其中设置有介于其间的非磁性间隔层的层间设置有MEF的一对电极，MEF的堆叠方向在MEF的堆叠方向上至少两个第一软磁性层，线圈， 和第二软磁层磁性地连接到线圈，其中第二软磁层具有环形形状，第二软磁层与MEF之间的间隔距离大于第一软磁层和MEF，第二软磁层的膜厚度大于 第一软磁层，两个第一软磁层的一部分在MEF的堆叠方向上与第二软磁层的一部分重叠，第一和第二软磁层彼此磁耦合，并且MEF设置在两个的相应前端之间 第一软磁层。

公开(公告)号：US20140340183A1

公开(公告)日：2014-11-20

申请号：US14282428

申请日：2014-05-20

Applicant: TDK CORPORATION

Inventor： Katsuyuki NAKADA ,  Takahiro SUWA ,  Kuniyasu ITO ,  Masato TAKAHASHI

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3922 ,  G11B5/3932 ,  G11B5/3941 ,  G11B2005/3996 ,  H01L43/08

Abstract: A magnetoresistive effect element includes a pair of first soft magnetic layers that are arranged opposite to each other so as to sandwich a magnetoresistive effect film; a second soft magnetic layer; and a coil that is windingly formed about the second soft magnetic layer. When a rear end region cross-sectional area of the first soft magnetic layers is defined as S1r and a tip end region cross-sectional area of the second soft magnetic layer is defined as S2f, S2f>S1r is established, and when a tip end width of the first soft magnetic layers is defined as W1f and a rear end width of the first soft magnetic layers is defined as W1r, W1r>W1f is established.

Abstract translation: 磁阻效应元件包括彼此相对布置以便夹着磁阻效应膜的一对第一软磁性层; 第二软磁层; 以及围绕第二软磁层卷绕形成的线圈。 当第一软磁性层的后端区域横截面积被定义为S1r，将第二软磁性层的前端区域横截面积定义为S2f时，建立S2f> S1r，并且当尖端 将第一软磁性层的宽度定义为W1f，将第一软磁性层的后端宽度定义为W1r，建立W1r> W1f。