公开(公告)号：US20220190234A1

公开(公告)日：2022-06-16

申请号：US17545467

申请日：2021-12-08

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Yugo ISHITANI ,  Kosuke HAMANAKA ,  Eiji KOMURA

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14

Abstract: The magnetization rotation element includes: a spin-orbit torque wiring; and a first ferromagnetic layer which is stacked on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a plurality of wiring layers, and wherein, in a cross section orthogonal to a length direction of the spin-orbit torque wiring, a product between a cross-sectional area and a resistivity of each of the wiring layers is larger in the wiring layer closer to the first ferromagnetic layer.

公开(公告)号：US20220158082A1

公开(公告)日：2022-05-19

申请号：US17526517

申请日：2021-11-15

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA ,  Tohru OIKAWA

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

Abstract: A method for producing a spin current magnetization rotational element includes a stacking step of stacking, on one surface of a substrate, a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction, wherein an inclined surface non-parallel to the first direction is formed on at least a part of a surface of the spin-orbit torque wiring.

公开(公告)号：US20220157533A1

公开(公告)日：2022-05-19

申请号：US17494538

申请日：2021-10-05

Applicant: TDK CORPORATION

Inventor： Akihiro MASUDA ,  Shinya ITO ,  Norihisa ANDO ,  Tomoyuki SASAKI ,  Shinya ONODERA

IPC: H01G4/38 ,  H01G4/224

Abstract: An electronic device includes a plurality of chip components and an insulating case. The chip components are arranged in a first direction. The case includes a plate portion, a first protrusion portion, and a second protrusion portion. The plate portion faces first side surfaces of the chip components. The first protrusion portion is formed along a plate-portion first side of the plate portion and protrudes from the plate portion toward a downside perpendicular to the first direction. The second protrusion portion is formed to the first protrusion portion in a second direction and protrudes from the plate portion toward the downside. A protrusion length of the first protrusion portion and the second protrusion portion from the plate portion toward the downside is smaller than a protrusion length of the chip component included in the chip components from the plate portion toward the downside.

公开(公告)号：US20220059757A1

公开(公告)日：2022-02-24

申请号：US17515957

申请日：2021-11-01

Applicant: TDK CORPORATION

Inventor： Eiji KOMURA ,  Tomoyuki SASAKI

IPC: H01L43/08 ,  H01L43/10

Abstract: This spin-orbit torque type magnetization rotational element (10) is provided with: a spin-orbit torque wiring (2); a first ferromagnetic layer (1) that is laminated on the spin-orbit torque wiring; a first nonmagnetic metal layer (3) and a second nonmagnetic metal layer (4) that are connected to the spin-orbit torque wiring at positions flanking the first ferromagnetic layer in a plan view from the second direction, and a first insulating layer (31) surrounding the spin-orbit torque wiring, wherein the gravity center (G) of the first ferromagnetic layer is positioned on a side closer to the first nonmagnetic metal layer or the second nonmagnetic metal layer than is a reference point (S) located at the center between the first and second nonmagnetic metal layers in the first direction, and the first insulating layer is any one selected from the group consisting of silicon nitride, aluminum nitride, aluminum oxide, and magnesium oxide.

公开(公告)号：US20220010423A1

公开(公告)日：2022-01-13

申请号：US17348238

申请日：2021-06-15

Applicant: TDK CORPORATION

Inventor： Tsuyoshi SUZUKI ,  Katsuyuki NAKADA ,  Tomoyuki SASAKI

IPC: C23C14/54 ,  C23C16/52 ,  C23C14/34 ,  G06F30/27

Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.

公开(公告)号：US20210399210A1

公开(公告)日：2021-12-23

申请号：US16959690

申请日：2020-01-24

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06

Abstract: A spin element includes a wiring, a laminated body including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part which sandwich the first ferromagnetic layer in a plan view in a laminating direction, and a first high resistance layer which is in contact with the wiring between the first conductive part and the wiring and has an electrical resistivity equal to or higher than that of the wiring.

公开(公告)号：US20210351232A1

公开(公告)日：2021-11-11

申请号：US17281027

申请日：2018-11-21

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI

IPC: H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  G06N3/063 ,  G06N3/04

Abstract: A reservoir element according to an aspect of the present invention includes a plurality of ferromagnetic layers laminated in a first direction and separated from each other, at least one spin-orbit torque wiring that faces at least one of the plurality of ferromagnetic layers, and a spin transport layer that faces the plurality of ferromagnetic layers, connects at least the two ferromagnetic layers closest to each other among the plurality of ferromagnetic layers and transports spins.

公开(公告)号：US20210328136A1

公开(公告)日：2021-10-21

申请号：US17333268

申请日：2021-05-28

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Katsuyuki NAKADA ,  Tatsuo SHIBATA

IPC: H01L43/10 ,  H01L43/08 ,  H01L27/105 ,  H01L29/82 ,  G01R33/09 ,  G11B5/39 ,  G11C11/16 ,  H01L27/22

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0≤x≤4), and an A-site is a non-magnetic divalent cation which is one or more selected from a group consisting of magnesium, zinc and cadmium.

公开(公告)号：US20210303981A1

公开(公告)日：2021-09-30

申请号：US17265622

申请日：2018-11-21

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA

IPC: G06N3/063 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14 ,  G06N3/08

Abstract: A reservoir element includes a plurality of magnetoresistive effect elements each having a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer laminated in a first direction, and separated from each other, a spin orbit torque wiring that faces a part of at least one of the plurality of magnetoresistive effect elements, and a spin-conductive layer that connects at least the magnetoresistive effect elements closest to each other of the plurality of magnetoresistive effect elements, and conducts spins, wherein, the magnetoresistive effect elements are seen from the first direction, the second ferromagnetic layer overlaps part of the first ferromagnetic layer, the spin orbit torque wiring faces a first portion that does not overlap the second ferromagnetic layer in the first ferromagnetic layer when seen from the first direction, and the spin-conductive layer faces at least the first ferromagnetic layer each of the closest magnetoresistive effect elements.

公开(公告)号：US20210184105A1

公开(公告)日：2021-06-17

申请号：US17269173

申请日：2019-02-01

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Atsushi TSUMITA ,  Yohei SHIOKAWA

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06

Abstract: A spin-orbit torque magnetoresistance effect element includes an element part including a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, a spin-orbit torque wiring positioned in a first direction with respect to the element part, facing the first ferromagnetic layer of the element part, and extending in a second direction, a first conductive part and a second conductive part facing the spin-orbit torque wiring at positions sandwiching the element part when viewed from the first direction, and a gate part including a gate insulating layer and a gate electrode in order from a position near the spin-orbit torque wiring, in which the spin-orbit torque wiring includes a semiconductor to which a scattering element is added.