公开(公告)号：US20210311388A1

公开(公告)日：2021-10-07

申请号：US17169206

申请日：2021-02-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Han LAI ,  Li-Po YANG ,  Shang-Wern CHANG ,  Ching-Yu CHANG ,  Tzu-Yang LIN ,  Chin-Hsiang LIN

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039

Abstract: Manufacturing semiconductor device includes forming photoresist layer. Photoresist layer is selectively exposed to actinic radiation and developed to form pattern. Photoresist composition includes: iodine-containing sensitizer, photoactive compound, polymer. Iodine-containing sensitizer includes ammonium, phosphonium, or heterocyclic ammonium iodides, where X1, X2, X3, and X4 are independently direct bond, C6-C30 iodo-aryl group, C1-C30 iodo-alkyl group, C3-C30 iodo-cycloalkyl group, C1-C30 iodo-hydroxylalkyl group, C2-C30 iodo-alkoxy group, C3-C30 iodo-alkoxyl alkyl group, C1-C30 iodo-acetyl group, C2-C30 iodo-acetylalkyl group, C1-C30 iodo-carboxyl group, C2-C30 iodo-alky carboxyl group, and C4-C30 iodo-cycloalkyl carboxyl group; C3-C30 saturated or unsaturated iodo-hydrocarbon ring, or C3-C30 iodo-heterocyclic group; A1, A2, A3, A4 are independently acid labile group selected from C6-C15 iodo-aryl group, C4-C15 iodo-alkyl group, C4-C15 iodo-cycloalkyl group, C4-C15 iodo-hydroxylalkyl group, C4-C15 iodo-alkoxy group, and C4-C15 iodo-alkoxyl alkyl group.

公开(公告)号：US20210096475A1

公开(公告)日：2021-04-01

申请号：US17121542

申请日：2020-12-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shinn-Sheng YU ,  Ru-Gun LIU ,  Hsu-Ting HUANG ,  Kenji YAMAZOE ,  Minfeng CHEN ,  Shuo-Yen CHOU ,  Chin-Hsiang LIN

IPC: G03F7/20

Abstract: A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)−2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.

公开(公告)号：US20210013048A1

公开(公告)日：2021-01-14

申请号：US17034043

申请日：2020-09-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ru-Gun LIU ,  Chih-Ming LAI ,  Wei-Liang LIN ,  Yung-Sung YEN ,  Ken-Hsien HSIEH ,  Chin-Hsiang LIN

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/768

Abstract: In a method of forming a groove pattern extending in a first axis in an underlying layer over a semiconductor substrate, a first opening is formed in the underlying layer, and the first opening is extended in the first axis by directional etching to form the groove pattern.

公开(公告)号：US20200159110A1

公开(公告)日：2020-05-21

申请号：US16248601

申请日：2019-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui WENG ,  Chen-Yu LIU ,  Cheng-Han WU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F1/82 ,  G03F7/20

Abstract: A lithography method includes forming a resist layer over a substrate. The resist layer is exposed to radiation. The exposed resist layer is developed using a developer that removes an exposed portion of the exposed resist layer, thereby forming a patterned resist layer. The patterned resist layer is rinsed using a basic aqueous rinse solution.

公开(公告)号：US20200013618A1

公开(公告)日：2020-01-09

申请号：US16572286

申请日：2019-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hui WENG ,  An-Ren ZI ,  Ching-Yu CHANG ,  Chin-Hsiang LIN ,  Chen-Yu LIU

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/02

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The resist layer includes an inorganic material and an auxiliary. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes exposing a portion of the resist layer. The resist layer includes an exposed region and an unexposed region. In the exposed region, the auxiliary reacts with the first linkers. The method also includes removing the unexposed region of the resist layer by using a developer to form a patterned resist layer. The developer includes a ketone-based solvent having a formula (a) or the ester-based solvent having a formula (b).

公开(公告)号：US20190103306A1

公开(公告)日：2019-04-04

申请号：US16007648

申请日：2018-06-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tzu-Yang LIN ,  Cheng-Han WU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H01L21/768 ,  H01L21/027 ,  H01L21/033

Abstract: A method for forming openings in an underlayer includes: forming a photoresist layer on an underlayer formed on a substrate; exposing the photoresist layer; forming photoresist patterns by developing the exposed photoresist layer, the photoresist patterns covering regions of the underlayer in which the openings are to be formed; forming a liquid layer over the photoresist patterns; after forming the liquid layer, performing a baking process so as to convert the liquid layer to an organic layer in a solid form; performing an etching back process to remove a portion of the organic layer on a level above the photoresist patterns; removing the photoresist patterns, so as to expose portions of the underlayer by the remaining portion of the organic layer; forming the openings in the underlayer by using the remaining portion of the organic layer as an etching mask; and removing the remaining portion of the organic layer.

公开(公告)号：US20180174831A1

公开(公告)日：2018-06-21

申请号：US15628261

申请日：2017-06-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu LIU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H01L21/02 ,  H01L21/308 ,  H01L21/033 ,  C08G77/16 ,  C08G77/52 ,  C08G77/00

CPC classification number: H01L21/02216 ,  C08G77/16 ,  C08G77/52 ,  C08G77/70 ,  H01L21/02126 ,  H01L21/0332 ,  H01L21/3081

Abstract: Provided is a material composition and method for that includes forming a silicon-based resin over a substrate. In various embodiments, the silicon-based resin includes a nitrobenzyl functional group. In some embodiments, a baking process is performed to cross-link the silicon-based resin. Thereafter, the cross-linked silicon-based resin is patterned and an underlying layer is etched using the patterned cross-linked silicon-based resin as an etch mask. In various examples, the cross-linked silicon-based resin is exposed to a radiation source, thereby de-cross-linking the silicon-based resin. In some embodiments, the de-cross-linked silicon-based resin is removed using an organic solution.

公开(公告)号：US20180164684A1

公开(公告)日：2018-06-14

申请号：US15482315

申请日：2017-04-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ya-Ching CHANG ,  Chen-Yu LIU ,  Cheng-Han WU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/09 ,  G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  G03F7/11 ,  H01L21/027 ,  H01L21/308

CPC classification number: G03F7/38 ,  G03F7/0392 ,  G03F7/325

Abstract: A resist material and methods for forming a semiconductor structure including using the resist material are provided. The method for forming a semiconductor structure includes forming a resist layer over a substrate and exposing a portion of the resist layer to form an exposed portion of the resist layer by performing an exposure process. The method for forming a semiconductor structure further includes developing the resist layer in a developer. In addition, the resist layer is made of a resist material including a photosensitive polymer and a contrast promoter, and a protected functional group of the photosensitive polymer is deprotected to form a deprotected functional group during the exposure process, and a functional group of the contrast promoter bonds to the deprotected functional group of the photosensitive polymer.

公开(公告)号：US20150270103A1

公开(公告)日：2015-09-24

申请号：US14727957

申请日：2015-06-02

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chih-Hong HWANG ,  Chun-Lin CHANG ,  Nai-Han CHENG ,  Chi-Ming YANG ,  Chin-Hsiang LIN

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/20

CPC classification number: H01J37/3171 ,  H01J37/1474 ,  H01J37/20 ,  H01J37/3023 ,  H01J37/3172 ,  H01J2237/12 ,  H01J2237/20228 ,  H01J2237/30477 ,  H01J2237/30483 ,  H01L21/265 ,  H01L21/68764

Abstract: A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate.

Abstract translation: 提供了用于离子注入方法和装置的过程控制方法，以在衬底上产生高剂量区域，例如可以补偿所指出的不均匀性。 在离子注入工具中，分离的可控电极被设置为设置在离子束外部的多组相对的电极。 光束阻挡器可以定位到离子束中。 电极和光束阻挡器都是可控的，以减少入射到基板上的离子束的面积。 电极和光束阻挡器也改变入射在表面上的减小面积的离子束的位置。 衬底扫描通过离子束的速度可以在植入过程期间动态地改变，以在衬底中产生各种剂量浓度。

公开(公告)号：US20150144161A1

公开(公告)日：2015-05-28

申请号：US14092533

申请日：2013-11-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Weibo YU ,  Kuo-Sheng CHUANG ,  Wen-Yu KU ,  Chin-Hsiang LIN

IPC: B08B3/02

CPC classification number: B08B3/02 ,  B05B15/555 ,  B08B17/025 ,  H01L21/67051

Abstract: A dispensing method is disclosed that includes the following steps: a cleaning sleeve is provided to surround a spray member. A first fluid is previously dispensed from a first fluid outlet of the spray member. A second fluid is sprayed from a second fluid outlet of the cleaning sleeve to clean the spray member. The cleaning sleeve is opened or slid away from the spray member, such that the first fluid outlet of the spray member is exposed to a substrate. The first fluid is dispensed from the first fluid outlet of the spray member to the substrate.

Abstract translation: 公开了一种分配方法，其包括以下步骤：提供清洁套筒以围绕喷雾构件。 预先从喷雾构件的第一流体出口分配第一流体。 从清洁套筒的第二流体出口喷射第二流体以清洁喷雾构件。 清洁套筒从喷雾构件打开或滑动，使得喷射构件的第一流体出口暴露于基底。 第一流体从喷雾构件的第一流体出口分配到基底。