公开(公告)号：US06568918B2

公开(公告)日：2003-05-27

申请号：US09952218

申请日：2001-09-13

申请人： Takahiro Sugioka ,  Takayuki Kato ,  Tetsuji Yamaguchi

发明人： Takahiro Sugioka ,  Takayuki Kato ,  Tetsuji Yamaguchi

IPC分类号： F04B112

CPC分类号： F04B27/1054 ,  F05C2251/14 ,  F05C2253/12 ,  F05C2253/20

摘要： A swash plate slides on a plurality of shoes. A lubrication coating is applied to the swash plate. The lubrication coating includes a non-graphite solid lubricant, a transfer adjusting agent, and a resin binder. The transfer adjusting agent adjusts the amount of the solid lubricant that is transferred from the swash plate to the shoes. The materials and quantities of the coating are chosen to extend the life of the parts.

摘要翻译： 旋转斜盘在多个鞋子上滑动。 润滑涂层应用于斜盘。 润滑涂层包括非石墨固体润滑剂，转移调节剂和树脂粘合剂。 转印调节剂调节从斜盘转移到鞋子的固体润滑剂的量。 选择涂层的材料和数量以延长部件的使用寿命。

公开(公告)号：US09362307B2

公开(公告)日：2016-06-07

申请号：US13185931

申请日：2011-07-19

申请人： Tetsuji Yamaguchi ,  Kengo Akimoto ,  Hiroki Kayoiji ,  Toru Takayama

发明人： Tetsuji Yamaguchi ,  Kengo Akimoto ,  Hiroki Kayoiji ,  Toru Takayama

IPC分类号： H01L29/786 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L27/12 ,  H01L27/1248

摘要： An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment.

摘要翻译： 本发明的目的是提供一种薄膜晶体管的制造方法，其能够进行旨在提高栅极绝缘膜的特性的热处理，例如降低界面电平或降低固定电荷，而不会引起不对准的问题 由于玻璃的膨胀或收缩造成图案化。 本发明的薄膜晶体管的制造方法包括以下步骤：在不进行元件隔离的半导体膜上形成至少栅极绝缘膜的状态下进行热处理，同时隔离栅极绝缘膜和 将半导体膜形成为元件结构，形成覆盖露出的半导体膜的侧面的绝缘膜，由此防止半导体膜与栅电极之间的短路。 由于栅极绝缘膜和半导体膜在热处理后同时被加工成元件形状，所以可以防止热处理期间的玻璃基板的膨胀或收缩，从而影响图案中的未对准。

公开(公告)号：US08872087B2

公开(公告)日：2014-10-28

申请号：US13492123

申请日：2012-06-08

申请人： Tetsuji Yamaguchi

发明人： Tetsuji Yamaguchi

IPC分类号： H01L27/00 ,  H01L27/146 ,  H04N5/378

CPC分类号： H04N5/369 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14665 ,  H04N5/378

摘要： Disclosed herein is an imaging device including: a plurality of pixels disposed to form a matrix having pixel rows, the pixels including a pixel electrode formed on a silicon substrate for one of the pixels by being separated away from another pixel electrodes formed for one of the other pixels, a photoelectric conversion film formed on the pixel electrode, and an opposite electrode formed on the photoelectric conversion film; and a driving section configured to apply an electric potential to the photoelectric conversion film on each of the pixel rows at least having read timings different from each other with a predetermined timing outside an exposure period of the pixels in a direction opposite to that of an electric potential applied to the photoelectric conversion film during the exposure period of the pixels.

摘要翻译： 本文公开了一种成像装置，包括：多个像素，被设置成形成具有像素行的矩阵，所述像素包括通过与形成于所述像素行中的一个形成的另一个像素电极分离而形成在所述像素之一上的硅衬底上的像素电极 其他像素，形成在像素电极上的光电转换膜和形成在光电转换膜上的相对电极; 以及驱动部，被配置为在像素行的每一个上向所述光电转换膜施加电位，至少在与所述像素行的方向相反的方向的像素的曝光周期之外的预定定时彼此不同的读取定时 在像素的曝光期间施加到光电转换膜的电位。

公开(公告)号：US08728852B2

公开(公告)日：2014-05-20

申请号：US13178624

申请日：2011-07-08

申请人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

发明人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

IPC分类号： H01L31/02

CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14689 ,  H01L27/14831

摘要： A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

摘要翻译： 一种固体摄像器件，包括像素部分，外围电路部分，在外围电路部分中的半导体衬底上形成有STI结构的第一隔离区域和在半导体衬底上形成有STI结构的第二隔离区域 在像素部分。 埋在半导体衬底中的第二隔离区的部分比第一隔离区的半导体衬底的部分浅，第二隔离区的上表面的高度等于第一隔离区的高度。 还公开了制造固态成像装置的方法和设置有固态成像装置的电子装置。

公开(公告)号：US08397169B2

公开(公告)日：2013-03-12

申请号：US12389036

申请日：2009-02-19

申请人： Tetsuji Yamaguchi ,  Daisuke Yoshida

发明人： Tetsuji Yamaguchi ,  Daisuke Yoshida

IPC分类号： G06F17/00

CPC分类号： G06F3/1288 ,  G06F3/1204 ,  G06F3/1254

摘要： An image forming system including a management device, an image forming apparatus including an auxiliary storage device, and a plurality of information processing devices, which are coupled to one another via a network, the image forming system being configured as follows. The management device is designed to: acquire a box information file regarding a document box created on the auxiliary storage device from the image forming apparatus via the network; and transmit the box information file to each of the plurality of information processing devices in its original format and a state after conversion thereof into a predetermined format. The plurality of information processing devices each control a printer driver compatible with the image forming apparatus to read the received box information file.

摘要翻译： 一种图像形成系统，包括经由网络彼此耦合的管理装置，包括辅助存储装置的图像形成装置和多个信息处理装置，所述图像形成系统被配置如下。 管理装置被设计成：通过网络从图像形成装置获取关于在辅助存储装置上创建的文件盒的框信息文件; 并将该盒信息文件以原始格式发送到多个信息处理装置中的每一个，并将其转换成预定格式之后的状态。 多个信息处理装置各自控制与图像形成装置兼容的打印机驱动程序，以读取接收的盒信息文件。

公开(公告)号：US08368784B2

公开(公告)日：2013-02-05

申请号：US12836741

申请日：2010-07-15

申请人： Tetsuji Yamaguchi

发明人： Tetsuji Yamaguchi

IPC分类号： H04N5/335

CPC分类号： H01L27/307 ,  H01L27/14632 ,  H01L27/14647 ,  H01L27/14687 ,  H01L27/14689

摘要： A solid-state imaging device includes: a light incident side; a circuit formation surface being opposite to the light incident side; and an inorganic photoelectric conversion unit having a pn junction and an organic photoelectric conversion unit including an organic photoelectric conversion layer, which are laminated in the same pixel in a depth direction from the light incident side and on which light is incident without passing through a color filter. Signals of the inorganic photoelectric conversion unit and the organic photoelectric conversion unit are read on the circuit formation surface.

摘要翻译： 固态成像装置包括：光入射侧; 电路形成面与光入射侧相对; 以及具有pn结的无机光电转换单元和包括有机光电转换层的有机光电转换单元，其从光入射侧沿深度方向层叠在相同的像素中，并且在不穿过颜色的情况下入射光 过滤。 在电路形成面上读取无机光电转换单元和有机光电转换单元的信号。

公开(公告)号：US08258030B2

公开(公告)日：2012-09-04

申请号：US11970341

申请日：2008-01-07

申请人： Tetsuji Yamaguchi ,  Hajime Tokunaga

发明人： Tetsuji Yamaguchi ,  Hajime Tokunaga

IPC分类号： H01L21/8247

CPC分类号： B82Y10/00 ,  G11C16/04 ,  G11C2216/06 ,  H01L21/28273 ,  H01L24/32 ,  H01L24/73 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/7881 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/0106 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/07811 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/00012

摘要： The present invention provides a manufacturing method of a semiconductor device having a semiconductor nonvolatile memory element that is highly reliable and that can increase a variation of a threshold voltage. Further, the present invention provides a method for manufacturing a semiconductor device having a highly reliable semiconductor nonvolatile memory element using a large substrate. According to the present invention, sputtering using, as a target, a solid solution containing silicon that exceeds a solid solubility limit is conducted, so that a conductive film including a conductive layer of a metal element that is a main component of the solid solution and silicon particles is formed, and then, the conductive layer of the metal element is removed to expose silicon particles. Furthermore, a semiconductor device having a semiconductor nonvolatile memory element using the silicon particles as a floating gate electrode is manufactured.

摘要翻译： 本发明提供一种半导体器件的制造方法，其具有高可靠性的半导体非易失性存储元件，并且可以增加阈值电压的变化。 此外，本发明提供一种使用大基板的具有高可靠性的半导体非易失性存储元件的半导体器件的制造方法。 根据本发明，进行使用超过固体溶解度极限的含有硅的固溶体作为目标的溅射，使得包含作为固溶体的主要成分的金属元素的导电层的导电膜和 形成硅颗粒，然后去除金属元素的导电层以暴露硅颗粒。 此外，制造具有使用硅颗粒作为浮栅电极的半导体非易失性存储元件的半导体器件。

公开(公告)号：US07923778B2

公开(公告)日：2011-04-12

申请号：US11876429

申请日：2007-10-22

申请人： Tetsuji Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

发明人： Tetsuji Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

IPC分类号： H02L27/14 ,  H01L27/88

CPC分类号： H01L27/1259 ,  H01L27/1214

摘要： A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer. In the second annealing, a base metal film absorbs and accumulates heat of the laser irradiation, and a semiconductor layer is supplied with beat of the base metal film in addition to heat of the laser irradiation, thereby enhancing efficiency of the silicide reaction in the source and drain regions.

摘要翻译： 对薄膜集成电路进行自对准处理，而不用担心对玻璃基板的损坏，因此可以实现电路的高速操作。 在玻璃基板上形成贱金属膜，氧化物和基底绝缘膜。 在基底绝缘膜上形成具有侧壁的TFT，并且形成覆盖TFT的金属膜。 在不会引起基板收缩的温度下由RTA等进行退火，在源极和漏极区域形成高阻金属硅化物层。 在除去未反应的金属膜之后，对第二次退火进行激光照射; 因此进行硅化物反应，高阻金属硅化物层变成低电阻金属硅化物层。 在第二退火中，贱金属膜吸收并累积激光照射的热量，并且除了激光照射的热量之外，还向半导体层供给贱金属膜的节拍，从而提高源的硅化物反应的效率 和漏区。

公开(公告)号：US20110019042A1

公开(公告)日：2011-01-27

申请号：US12836741

申请日：2010-07-15

申请人： Tetsuji Yamaguchi

发明人： Tetsuji Yamaguchi

IPC分类号： H04N5/335 ,  H01L31/18

CPC分类号： H01L27/307 ,  H01L27/14632 ,  H01L27/14647 ,  H01L27/14687 ,  H01L27/14689

摘要： A solid-state imaging device includes: a light incident side; a circuit formation surface being opposite to the light incident side; and an inorganic photoelectric conversion unit having a pn junction and an organic photoelectric conversion unit including an organic photoelectric conversion layer, which are laminated in the same pixel in a depth direction from the light incident side and on which light is incident without passing through a color filter. Signals of the inorganic photoelectric conversion unit and the organic photoelectric conversion unit are read on the circuit formation surface.

摘要翻译： 固态成像装置包括：光入射侧; 电路形成面与光入射侧相对; 以及具有pn结的无机光电转换单元和包括有机光电转换层的有机光电转换单元，其从光入射侧沿深度方向层叠在相同的像素中，并且在不穿过颜色的情况下入射光 过滤。 在电路形成面上读取无机光电转换单元和有机光电转换单元的信号。

公开(公告)号：US07652321B2

公开(公告)日：2010-01-26

申请号：US11072632

申请日：2005-03-07

申请人： Tetsuji Yamaguchi ,  Kiyoshi Kato

发明人： Tetsuji Yamaguchi ,  Kiyoshi Kato

IPC分类号： H01L29/72

CPC分类号： H01L21/84 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/1203

摘要： In a process of manufacturing elements of different structures and characteristics on the same substrate at the same time, the number of steps is increased and complicated. In view of this, the invention provides a semiconductor device and a manufacturing process thereof in which elements of different structures are formed on the same substrate while reducing the number of steps. According to the invention, in accordance with a memory transistor that requires the largest number of steps when being formed among elements that forms a semiconductor memory device, other high speed transistor and high voltage transistor are efficiently manufactured. Thus, the number of steps is suppressed and a low cost semiconductor memory device can be manufactured.

摘要翻译： 在同一基板上同时制造不同结构和特性的元件的过程中，台阶增加复杂。 鉴于此，本发明提供了一种半导体器件及其制造方法，其中不同结构的元件形成在同一衬底上，同时减少了步骤数。 根据本发明，根据在形成半导体存储器件的元件之间形成最大数量的步骤的存储晶体管时，有效地制造其它高速晶体管和高压晶体管。 因此，抑制了步数，并且可以制造低成本的半导体存储器件。