公开(公告)号：US20060068098A1

公开(公告)日：2006-03-30

申请号：US10949803

申请日：2004-09-27

申请人： Hideaki Yamasaki ,  Yumiko Kawano ,  Gert Leusink

发明人： Hideaki Yamasaki ,  Yumiko Kawano ,  Gert Leusink

IPC分类号： C23C16/00

CPC分类号： H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76873

摘要： A method for depositing a Ru metal layer on a substrate is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas, a ruthenium-carbonyl precursor, and hydrogen. The method further includes depositing a Ru metal layer on the substrate by a thermal chemical vapor deposition process. In one embodiment of the invention, the ruthenium-carbonyl precursor can contain Ru3(CO)12. and the Ru metal layer can be deposited at a substrate temperature resulting in the Ru metal layer having predominantly Ru(002) crystallographic orientation.

摘要翻译： 介绍了一种在衬底上沉积Ru金属层的方法。 该方法包括在处理室中提供衬底，在工艺气体中引入工艺气体，其中工艺气体包括载气，羰基钌前体和氢。 该方法还包括通过热化学气相沉积工艺在基底上沉积Ru金属层。 在本发明的一个实施方案中，羰基钌前驱体可含有Ru 3（CO）12。 并且Ru金属层可以在衬底温度下沉积，导致Ru金属层主要具有Ru（002）晶体取向。

公开(公告)号：US06966936B2

公开(公告)日：2005-11-22

申请号：US10277914

申请日：2002-10-23

申请人： Hideaki Yamasaki ,  Yumiko Kawano ,  Kenichi Kubo ,  Susumu Arima

发明人： Hideaki Yamasaki ,  Yumiko Kawano ,  Kenichi Kubo ,  Susumu Arima

IPC分类号： B01D53/64 ,  C23C16/18 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/31 ,  H01L21/3205 ,  H01L23/52 ,  B01D45/08

CPC分类号： C23C16/18 ,  C23C16/4412 ,  C23C16/45593 ,  H01L21/28556 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S55/15

摘要： An object of the present invention is to ensure the stable operation of a vacuum pump for discharging an unused source gas and reaction byproduct gases from a low-pressure processing chamber, to recover the reaction byproducts efficiently for the effective utilization of resources and reduction of running costs. A low-pressure CVD system has a processing vessel (10) for carrying out a low-pressure CVD process for forming a copper film, a source gas supply unit (12) for supplying an organic copper compound as a source gas, such as Cu(I)hfacTMVS, into the processing vessel (10), and an evacuating system (14) for evacuating the processing vessel (10). The evacuating system (14) includes a vacuum pump (26), a high-temperature trapping device (28) disposed above the vacuum pump (26) with respect to the flowing direction of a gas, and a low-temperature trapping device (30) disposed below the vacuum pump with respect to the flowing direction of a gas. The high-temperature trapping device (28) decomposes the unused Cu(I)hfacTMVS contained in a gas sucked out of the processing vessel (10) to trap metallic copper. The low-temperature trapping device traps Cu(II)(hfac)2 produced as a reaction byproduct.

摘要翻译： 本发明的目的是为了确保真空泵的稳定运行，用于从低压处理室排出未使用的源气体和反应副产物气体，以有效地回收反应副产物以有效利用资源并减少运行 费用 低压CVD系统具有用于进行用于形成铜膜的低压CVD工艺的处理容器（10），用于供应有机铜化合物作为源气体的源气体供给单元（12），例如Cu （I）hfacTMVS进入处理容器（10），以及用于抽空处理容器（10）的抽空系统（14）。 抽真空系统（14）包括真空泵（26），相对于气体的流动方向设置在真空泵（26）上方的高温捕集装置（28）和低温捕集装置（30） ）相对于气体的流动方向设置在真空泵下方。 高温捕集装置（28）分解从处理容器（10）中吸出的气体中所含的未使用的Cu（I）hfacTMVS，以捕获金属铜。 低温捕获装置捕获作为反应副产物产生的Cu（II）（hfac）2 。

公开(公告)号：US06919268B1

公开(公告)日：2005-07-19

申请号：US10451598

申请日：2001-12-25

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/4763

CPC分类号： H01L21/76877 ,  H01L21/28556 ,  H01L21/28568

摘要： WF6 is used as a source gas of tungsten, and NH3 is used as a source gas of nitrogen. The partial pressure of WF6 is set to be higher than that of NH3. The substrate temperature is set to about 400° C. to 450° C. Tungsten nitride is deposited and then heated, to form a contact plug (106).

摘要翻译： WF 6用作钨的源气体，NH 3被用作氮的源气体。 WF 6分压的分压设定为高于NH 3的分压。 衬底温度设定为约400℃至450℃。沉积氮化钨，然后加热，形成接触塞（106）。

公开(公告)号：US06797068B1

公开(公告)日：2004-09-28

申请号：US10049283

申请日：2002-02-11

申请人： Hideaki Yamasaki ,  Takashi Mochizuki ,  Susumu Arima ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Takashi Mochizuki ,  Susumu Arima ,  Yumiko Kawano

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/45589 ,  C23C16/4585 ,  H01L21/68721 ,  H01L21/68735

摘要： A film-forming unit of the invention includes a processing container in which a vacuum can be created, a stage arranged in the processing container, on which an object to be processed is placed, a process-gas supplying means for supplying a process gas into the processing container, and a heating means for heating the object to be processed placed on the stage. A division wall surrounds a lateral side and a lower side of the stage. An inert gas is introduced into a stage-side region surrounded by the division wall, by an inert-gas supplying means. A gap-forming member is arranged in such a manner that its inner peripheral portion is arranged above a peripheral portion of the object to be processed placed on the stage via a gap and its outer peripheral portion is arranged above the division wall via a gap.

摘要翻译： 本发明的成膜单元包括其中可以产生真空的处理容器，设置在处理容器中的待处理物体的阶段，用于将处理气体供应到处理气体供应装置 处理容器和用于加热被放置在台架上的待处理物体的加热装置。 分隔壁围绕台的侧面和下侧。 通过惰性气体供给装置将惰性气体引入由分隔壁包围的载物台侧区域。 间隙形成构件被布置成使得其内周部分经由间隙布置在待处理物体的周边部分上，并且其外周部分经由间隙布置在分隔壁的上方。

公开(公告)号：US06793969B2

公开(公告)日：2004-09-21

申请号：US10210204

申请日：2002-08-02

申请人： Yukihiro Shimogaki ,  Yumiko Kawano

发明人： Yukihiro Shimogaki ,  Yumiko Kawano

IPC分类号： C23C1634

CPC分类号： H01L28/75 ,  C23C16/34 ,  C23C16/45523 ,  H01L21/28556

摘要： A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.

摘要翻译： 形成含有Ti，Si和N的导电膜的CVD工艺包括：第一步，同时供给Ti，Si和N的气体源，以生长导电膜;第二步骤，将Ti，Si和N的气态源 使Ti的气体源的流量降低的状态，进一步使导电膜生长，其中第一步骤和第二步骤交替进行。

公开(公告)号：US06486063B2

公开(公告)日：2002-11-26

申请号：US09793896

申请日：2001-02-28

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device manufacturing method, an interlevel insulating film is formed on a silicon substrate. A trench is formed in the interlevel insulating film. A lower underlying film made of a tungsten-based material is formed by thermal chemical vapor deposition to cover a bottom surface and side surface of the trench. An upper underlying film made of a tungsten-based material is formed by thermal chemical vapor deposition on an entire region on the lower underlying film. A copper film made of copper fills the trench. The upper underlying film is formed in accordance with thermal chemical vapor deposition by supplying a tungsten source gas and the other source gas such that the other source gas is supplied in an amount lager than that of the tungsten source gas. The lower underlying film is formed in accordance with thermal chemical vapor deposition by increasing a content of the tungsten source gas to be larger than to that of the other source gas in formation of the lower underlying film.

摘要翻译： 在半导体器件制造方法中，在硅衬底上形成层间绝缘膜。 在层间绝缘膜中形成沟槽。 通过热化学气相沉积形成由钨基材料制成的下基底膜以覆盖沟槽的底表面和侧表面。 由钨基材料制成的上基底膜通过热化学气相沉积形成在下层薄膜上的整个区域上。 由铜制成的铜膜填充沟槽。 根据热化学气相沉积，通过供给钨源气体和其它原料气体，使得其它源气体的供给量比钨源气体的量大，形成上层膜。 根据热化学气相沉积，通过将钨源气体的含量大于其它源气体的含量来形成下基底膜，以形成下基底膜。

公开(公告)号：US06089184A

公开(公告)日：2000-07-18

申请号：US92060

申请日：1998-06-05

申请人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

发明人： Takeshi Kaizuka ,  Takashi Horiuchi ,  Masami Mizukami ,  Takashi Mochizuki ,  Yumiko Kawano ,  Hideaki Yamasaki

IPC分类号： C23C16/18 ,  C23C16/20 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/4481 ,  C23C16/18 ,  C23C16/20 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45574

摘要： The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

公开(公告)号：US06063703A

公开(公告)日：2000-05-16

申请号：US81047

申请日：1998-05-19

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connecting holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，在绝缘膜上形成诸如TiN的下面的金属膜和连接孔的底壁和侧壁，通过CVD 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

公开(公告)号：US5973402A

公开(公告)日：1999-10-26

申请号：US791161

申请日：1997-01-30

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。