公开(公告)号：US20050020065A1

公开(公告)日：2005-01-27

申请号：US10917334

申请日：2004-08-13

申请人： Yukihiro Shimogaki ,  Yumiko Kawano

发明人： Yukihiro Shimogaki ,  Yumiko Kawano

IPC分类号： C23C16/42 ,  C23C16/34 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L21/00 ,  H01L21/44 ,  H01L21/4763

CPC分类号： H01L28/75 ,  C23C16/34 ,  C23C16/45523 ,  H01L21/28556

摘要： A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.

摘要翻译： 形成含有Ti，Si和N的导电膜的CVD工艺包括：第一步，同时供给Ti，Si和N的气体源，以生长导电膜;第二步骤，将Ti，Si和N的气态源 使Ti的气体源的流量降低的状态，进一步使导电膜生长，其中第一步骤和第二步骤交替进行。

公开(公告)号：US07105060B2

公开(公告)日：2006-09-12

申请号：US10917334

申请日：2004-08-13

申请人： Yukihiro Shimogaki ,  Yumiko Kawano

发明人： Yukihiro Shimogaki ,  Yumiko Kawano

IPC分类号： C23C16/455 ,  C23C16/52 ,  C23C16/18 ,  C23C16/30

CPC分类号： H01L28/75 ,  C23C16/34 ,  C23C16/45523 ,  H01L21/28556

摘要： A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.

公开(公告)号：US06793969B2

公开(公告)日：2004-09-21

申请号：US10210204

申请日：2002-08-02

申请人： Yukihiro Shimogaki ,  Yumiko Kawano

发明人： Yukihiro Shimogaki ,  Yumiko Kawano

IPC分类号： C23C1634

CPC分类号： H01L28/75 ,  C23C16/34 ,  C23C16/45523 ,  H01L21/28556

摘要： A CVD process of forming a conductive film containing Ti, Si and N includes a first step of supplying gaseous sources of Ti, Si and N simultaneously to grow a conductive film and a second step of supplying the gaseous sources of Ti, Si and N in a state that a flow rate of the gaseous source of Ti is reduced, to grow the conductive film further, wherein the first step and the second step are conducted alternately.

摘要翻译： 形成含有Ti，Si和N的导电膜的CVD工艺包括：第一步，同时供给Ti，Si和N的气体源，以生长导电膜;第二步骤，将Ti，Si和N的气态源 使Ti的气体源的流量降低的状态，进一步使导电膜生长，其中第一步骤和第二步骤交替进行。

公开(公告)号：US08679913B2

公开(公告)日：2014-03-25

申请号：US12676237

申请日：2008-09-02

申请人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/8242 ,  H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/316

CPC分类号： H01L21/0228 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/31604 ,  H01L21/31691 ,  H01L21/67115 ,  H01L21/68742 ,  H01L28/55

摘要： A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O2 at 500° C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, O3 and H2O are used as an oxidizing agent.

摘要翻译： 形成膜，使得膜中的Sr与Ti的原子数比（即Sr / Ti）不小于1.2且不大于3.然后将膜在包含不低于0.001％的气氛中退火， 在500℃以上不超过80％的O 2。 重复多次SrO膜形成步骤或TiO膜形成步骤，使得连续进行多个SrO膜形成步骤或/和多个TiO膜形成步骤的顺序被包括在内。 在Sr吸附后Sr被氧化时，O3和H2O用作氧化剂。

公开(公告)号：US08674273B2

公开(公告)日：2014-03-18

申请号：US13040697

申请日：2011-03-04

申请人： Tomihiro Yonenaga ,  Yumiko Kawano

发明人： Tomihiro Yonenaga ,  Yumiko Kawano

IPC分类号： H05B6/10 ,  C23C16/00

CPC分类号： C23C16/46 ,  H01L21/67109 ,  H05B6/105 ,  H05B6/365 ,  H05B6/44

摘要： Provided is a heat treatment apparatus which, when simultaneously heating substrates placed on susceptors, is capable of controlling the uniformity of temperature within each substrate. The heat treatment apparatus includes: a reaction tube which performs predetermined treatment to wafers; a plurality of susceptors each of which has a mounting surface for mounting the wafer and is made of a conductive material; a rotatable quartz boat wherein the susceptors spaced apart in a direction perpendicular to the mounting surfaces are arranged and supported in the reaction tube; a magnetic field generating unit which is arranged on a sidewall of the processing chamber and includes a pair of electromagnets which generate an AC magnetic field in a direction parallel to the mounting surfaces of the susceptors and inductively heat the susceptors; and a control unit which controls the AC magnetic field generated by the magnetic field generating unit.

摘要翻译： 提供一种热处理装置，当同时加热放置在基座上的基板时，能够控制每个基板内的温度均匀性。 热处理装置包括：对晶片进行预定处理的反应管; 多个感受体具有用于安装晶片并由导电材料制成的安装表面; 一个可旋转的石英舟，其中在垂直于安装表面的方向间隔开的基座被布置和支撑在反应管中; 磁场产生单元，其布置在所述处理室的侧壁上，并且包括一对电磁体，所述一对电磁体在平行于所述基座的安装表面的方向上产生交流磁场并感应加热所述基座; 以及控制单元，其控制由磁场产生单元产生的交流磁场。

公开(公告)号：US20110248024A1

公开(公告)日：2011-10-13

申请号：US13092650

申请日：2011-04-22

申请人： Tomihiro YONENAGA ,  Yumiko Kawano

发明人： Tomihiro YONENAGA ,  Yumiko Kawano

IPC分类号： H05B6/10

CPC分类号： H01L21/67109 ,  H01L21/67303

摘要： In-plane temperature of each substrate is uniformly controlled at the time of heating substrates placed on a plurality of susceptors, respectively. A heat treatment apparatus is provided with susceptors, i.e., conductive members for placing wafers thereon, having an induction heating body electrically divided into a center portion thereof and a peripheral portion thereof; a quartz boat supporting the susceptors arranged in a row; an induction coil, which is arranged inside a processing chamber to surround the circumference of each of the susceptors and configured such that the temperature of the induction coil can be freely adjusted; and a control unit which performs temperature control by changing the ratio between heat value at the center portion of the induction heating body and that at the peripheral portion, by controlling two high frequency currents of different frequencies to be applied to the induction coil from a high frequency current circuit.

摘要翻译： 在分别加热放置在多个基座上的基板时，均匀地控制每个基板的面内温度。 一种热处理设备设置有基座，即用于在其上放置晶片的导电构件，具有电分割成其中心部分的感应加热体及其周边部分; 支撑排列成一排的基座的石英舟; 感应线圈，其布置在处理室内部以围绕每个基座的圆周并且被配置为使得感应线圈的温度可以自由地调节; 以及控制单元，其通过改变感应加热体的中心部分的热值与周边部分的热值之比，通过从高电平控制施加到感应线圈的不同频率的两个高频电流来进行温度控制 频率电流电路。

公开(公告)号：US08029621B2

公开(公告)日：2011-10-04

申请号：US12067714

申请日：2006-07-25

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： C23C16/00

CPC分类号： C23C16/4481

摘要： A raw material feeding device for feeding a gaseous raw material formed by sublimating a solid raw material to a film formation system includes a raw material container for holding the solid raw material therein, a first heating unit placed at a first side of the container, a second heating unit placed at a second side thereof, the first temperature control unit for conducting a first process of controlling the first and the second heating unit to make the temperature of the first side higher than that of the second side to thereby sublimate the solid raw material disposed at the first side, and the second temperature control unit for conducting a second process of controlling the first and the second heating unit to make the temperature of the second side higher than that of the first side to thereby sublimate the solid raw material disposed at the second side.

摘要翻译： 将通过将固体原料升华形成的气态原料供给到成膜系统的原料供给装置包括：将固体原料保持在其中的原料容器，放置在容器第一侧的第一加热单元， 放置在第二侧的第二加热单元，第一温度控制单元，用于进行控制第一和第二加热单元的第一过程，以使第一侧的温度高于第二侧的温度，从而使固体原料 设置在第一侧的材料和第二温度控制单元，用于进行控制第一和第二加热单元的第二过程，以使第二侧的温度高于第一侧的温度，从而使设置的固体原料升华 在第二边。

公开(公告)号：US20110014797A1

公开(公告)日：2011-01-20

申请号：US12676237

申请日：2008-09-02

申请人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

发明人： Yumiko Kawano ,  Susumu Arima ,  Akinobu Kakimoto ,  Toshiyuki Hirota ,  Takakazu Kiyomura

IPC分类号： H01L21/30

CPC分类号： H01L21/0228 ,  C23C16/409 ,  C23C16/45531 ,  H01L21/02197 ,  H01L21/31604 ,  H01L21/31691 ,  H01L21/67115 ,  H01L21/68742 ,  H01L28/55

摘要： A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O2 at 500° C. or above. An SrO film forming step or a TiO film forming step are repeated a plurality of times so that a sequence, in which a plurality of SrO film forming steps or/and a plurality of TiO film forming steps are performed continuously, is included. When Sr is oxidized after the adsorption of Sr, O3 and H2O are used as an oxidizing agent.

摘要翻译： 形成膜，使得膜中的Sr与Ti的原子数比（即Sr / Ti）不小于1.2且不大于3.然后将膜在包含不低于0.001％的气氛中退火， 在500℃以上不超过80％的O 2。 重复多次SrO膜形成步骤或TiO膜形成步骤，使得连续进行多个SrO膜形成步骤或/和多个TiO膜形成步骤的顺序被包括在内。 在Sr吸附后Sr被氧化时，O3和H2O用作氧化剂。

公开(公告)号：US07361595B2

公开(公告)日：2008-04-22

申请号：US10471588

申请日：2002-03-14

申请人： Hideaki Yamasaki ,  Susumu Arima ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Susumu Arima ,  Yumiko Kawano

IPC分类号： H01L21/44

CPC分类号： H01L28/65 ,  C23C16/0218 ,  C23C16/0236 ,  C23C16/18 ,  C23C16/452 ,  C23C16/45523 ,  H01L21/3105 ,  H01L21/31612 ,  H01L28/55 ,  H01L28/60 ,  H01L28/90

摘要： A semiconductor substrate is placed in a predetermined processing vessel, and oxygen gas activated by, e.g. conversion into a plasma is supplied onto an insulating film. The surfaces of an interlevel insulating film and insulating film are exposed to the activated oxygen gas. After that, a transition metal film, e.g. a ruthenium film, is formed by CVD.

摘要翻译： 将半导体衬底放置在预定的处理容器中，并且通过例如氧化铝活化的氧气。 将转换成等离子体供给到绝缘膜上。 层间绝缘膜和绝缘膜的表面暴露于活性氧气。 之后，过渡金属膜，例如 通过CVD形成钌膜。

公开(公告)号：US06989321B2

公开(公告)日：2006-01-24

申请号：US10673908

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert J Leusink ,  Fenton R McFeely ,  Sandra G. Malhotra

IPC分类号： H01L21/20 ,  H01L21/44

CPC分类号： C23C16/16 ,  H01L21/28556

摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.

摘要翻译： 通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。 在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO） CO 2，CO 2，CO 2，CO 2，CO 2，CO 2，CO 2， Re（CO）10，Cr（CO）6和Ru 3（CO）3， 12个前体。 在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。