RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
    71.
    发明申请
    RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME 有权
    使用它的耐蚀组合物和图案形成方法

    公开(公告)号:US20110014570A1

    公开(公告)日:2011-01-20

    申请号:US12921354

    申请日:2009-03-13

    IPC分类号: G03F7/004 G03F7/20

    摘要: A resist composition and a pattern forming method using the composition are provided, the resist composition including: (A) a resin that decomposes by an action of an acid to increase a solubility of the resin (A) in an alkali developer; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a compound represented by formula (C1); and (D) a solvent: wherein n represents an integer of 1 to 6; w represents an integer of 1 to 6; p represents an integer of 1 to 6; m represents an integer of 1 to 6; Ra, Rb, Rc and Rd each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group, provided that Ra and Rb may combine together to form a ring, and Rc and Rd may combine together to form a ring.

    摘要翻译: 提供了使用该组合物的抗蚀剂组合物和图案形成方法,该抗蚀剂组合物包括:(A)通过酸的作用分解以提高树脂(A)在碱性显影剂中的溶解度的树脂; (B)能够在用光化射线或辐射照射时能够产生酸的化合物; (C)由式(C1)表示的化合物; 和(D)溶剂:其中n表示1至6的整数; w表示1〜6的整数, p表示1〜6的整数, m表示1〜6的整数, Ra,Rb,Rc和Rd各自独立地表示氢原子,烷基,环烷基,芳基或芳烷基,条件是Ra和Rb可以结合在一起形成环,Rc和Rd可以结合在一起 形成一个戒指。

    Positive resist composition and pattern forming method using the same
    72.
    发明授权
    Positive resist composition and pattern forming method using the same 有权
    正型抗蚀剂组合物和使用其的图案形成方法

    公开(公告)号:US07625690B2

    公开(公告)日:2009-12-01

    申请号:US11717618

    申请日:2007-03-14

    IPC分类号: G03F7/004 G03F7/30

    摘要: A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents an aryl group; Rn represents an alkyl group, a cycloalkyl group or an aryl group; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.

    摘要翻译: 一种抗蚀剂组合物,其包含:(A)含有由式(I)表示的重复单元的树脂; 和(B)能够在用光化射线或辐射照射时能够产生酸的化合物:其中AR表示芳基; Rn表示烷基,环烷基或芳基; A表示选自氢原子,烷基,卤素原子,氰基和烷氧基羰基的原子或基团,以及使用该抗蚀剂组合物的图案形成方法。

    Positive resist composition and pattern forming method using the same
    73.
    发明授权
    Positive resist composition and pattern forming method using the same 有权
    正型抗蚀剂组合物和使用其的图案形成方法

    公开(公告)号:US07592118B2

    公开(公告)日:2009-09-22

    申请号:US12053675

    申请日:2008-03-24

    IPC分类号: G03F7/004 G03F7/30

    摘要: A positive resist composition, includes: (B) a resin containing a repeating unit represented by formula (Ia) or (Ib) as defined in the specification, which decomposes under an action of an acid to increase a solubility of the resin (B) in an aqueous alkali solution; and (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method uses the composition.

    摘要翻译: 正型抗蚀剂组合物包括:(B)含有本说明书中定义的由式(Ia)或(Ib)表示的重复单元的树脂,其在酸的作用下分解以增加树脂(B)的溶解度, 在碱性水溶液中; 和(A)能够在用光化射线或辐射照射时能够产生酸的化合物,并且图案形成方法使用该组合物。

    POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
    74.
    发明申请
    POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME 有权
    正极性组合物和使用其的图案形成方法

    公开(公告)号:US20080241743A1

    公开(公告)日:2008-10-02

    申请号:US12053675

    申请日:2008-03-24

    IPC分类号: G03F7/004 G03F7/00

    摘要: A positive resist composition, includes: (B) a resin containing a repeating unit represented by formula (Ia) or (Ib) as defined in the specification, which decomposes under an action of an acid to increase a solubility of the resin (B) in an aqueous alkali solution; and (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method uses the composition.

    摘要翻译: 正型抗蚀剂组合物包括:(B)含有本说明书中定义的由式(Ia)或(Ib)表示的重复单元的树脂,其在酸的作用下分解以增加树脂(B)的溶解度, 在碱性水溶液中; 和(A)能够在用光化射线或辐射照射时能够产生酸的化合物,并且图案形成方法使用该组合物。

    Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same
    75.
    发明授权
    Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same 有权
    用于电子束,EUV光或X射线的正性抗蚀剂组合物,以及使用其的图案形成方法

    公开(公告)号:US07344821B2

    公开(公告)日:2008-03-18

    申请号:US11090864

    申请日:2005-03-28

    IPC分类号: G03F7/039 G03F7/30

    摘要: A positive resist composition for use with an electron beam, an EUV light or an X ray, the positive resist composition comprising: (A) at least one compound that generates an acid upon treatment with one of an actinic ray and radiation; and (B) a resin that increases a solubility of the resin (B) in an alkaline developer by an action of an acid, wherein the resin (B) comprises a repeating unit having an alicyclic group connected with a fluorine-substituted alcohol residue; and a pattern formation method using the composition.

    摘要翻译: 一种用于电子束,EUV光或X射线的正性抗蚀剂组合物,所述正性抗蚀剂组合物包含:(A)至少一种在通过光化学射线和辐射之一处理后产生酸的化合物; 和(B)通过酸作用增加树脂(B)在碱性显影剂中的溶解度的树脂,其中树脂(B)包含具有与氟取代的醇残基相连的脂环基的重复单元; 以及使用该组合物的图案形成方法。

    Resist composition and pattern forming method using the same
    77.
    发明申请
    Resist composition and pattern forming method using the same 审中-公开
    抗蚀剂组合物和图案形成方法使用其

    公开(公告)号:US20060172226A1

    公开(公告)日:2006-08-03

    申请号:US11336912

    申请日:2006-01-23

    IPC分类号: G03C1/76

    摘要: A resist composition comprising (A) an acid generator represented by formula (1): wherein S1 to S8 each independently represents a substituent; a, n, m, l, k, o, p, q and r each independently represents an integer of 0 to 2; X represents a single bond or a divalent linking group; R1 and R2 each independently represents a hydrogen atom or a substituent, and R1 and R2 may combine with each other to represent a single bond or a divalent linking group; and Y− and Z− each independently represents an organic sulfonate anion.

    摘要翻译: 一种抗蚀剂组合物,其包含(A)由式(1)表示的酸发生剂:其中S 1至S 8各自独立地表示取代基; a,n,m,l,k,o,p,q和r各自独立地表示0〜2的整数。 X表示单键或二价连接基团; R 1和R 2各自独立地表示氢原子或取代基,R 1和R 2可以 彼此结合以表示单键或二价连接基团; 和Y - Z - 各自独立地表示有机磺酸根阴离子。

    Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same
    78.
    发明申请
    Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same 有权
    用于电子束,EUV光或X射线的正性抗蚀剂组合物,以及使用其的图案形成方法

    公开(公告)号:US20050221224A1

    公开(公告)日:2005-10-06

    申请号:US11090864

    申请日:2005-03-28

    摘要: A positive resist composition for use with an electron beam, an EUV light or an X ray, the positive resist composition comprising: (A) at least one compound that generates an acid upon treatment with one of an actinic ray and radiation; and (B) a resin that increases a solubility of the resin (B) in an alkaline developer by an action of an acid, wherein the resin (B) comprises a repeating unit having an alicyclic group connected with a fluorine-substituted alcohol residue; and a pattern formation method using the composition.

    摘要翻译: 一种用于电子束,EUV光或X射线的正性抗蚀剂组合物,所述正性抗蚀剂组合物包含:(A)至少一种在通过光化学射线和辐射之一处理后产生酸的化合物; 和(B)通过酸作用增加树脂(B)在碱性显影剂中的溶解度的树脂,其中树脂(B)包含具有与氟取代的醇残基相连的脂环基的重复单元; 以及使用该组合物的图案形成方法。

    Positive resist composition and pattern formation method using the same
    79.
    发明申请
    Positive resist composition and pattern formation method using the same 有权
    正型抗蚀剂组成和使用其的图案形成方法

    公开(公告)号:US20050164123A1

    公开(公告)日:2005-07-28

    申请号:US11041384

    申请日:2005-01-25

    IPC分类号: G03F7/039 G03C1/76

    摘要: A positive resist composition which can be suitably used in an ultramicrolithography process such as production of VLSI or high-capacity microchip and in other photofabrication processes and can ensure good sensitivity, resolution, pattern profile and line edge roughness when irradiated with actinic rays or radiation, particularly, electron beam, X-ray or EUV; and a pattern formation method using the composition, are provided, the positive resist composition comprising (A) a resin comprising a specific acryl-based repeating unit and a specific styrene-based repeating unit, which increases the dissolution rate in an alkali developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and (C) a solvent; and a pattern formation method using the composition.

    摘要翻译: 正极抗蚀剂组合物可以适用于超微光刻工艺如VLSI或大容量微芯片的生产和其它光制造工艺中,并且当用光化射线或辐射照射时可以确保良好的灵敏度,分辨率,图案轮廓和线边缘粗糙度, 特别是电子束,X射线或EUV; 和使用该组合物的图案形成方法,正型抗蚀剂组合物包含(A)包含特定的丙烯酸类重复单元和特定苯乙烯基重复单元的树脂,其增加碱显影剂中的溶解速率 酸的作用,(B)在用光化射线或辐射照射时能够产生酸的化合物,和(C)溶剂; 以及使用该组合物的图案形成方法。