摘要:
A resist composition and a pattern forming method using the composition are provided, the resist composition including: (A) a resin that decomposes by an action of an acid to increase a solubility of the resin (A) in an alkali developer; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (C) a compound represented by formula (C1); and (D) a solvent: wherein n represents an integer of 1 to 6; w represents an integer of 1 to 6; p represents an integer of 1 to 6; m represents an integer of 1 to 6; Ra, Rb, Rc and Rd each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group, provided that Ra and Rb may combine together to form a ring, and Rc and Rd may combine together to form a ring.
摘要:
A resist composition, which comprises: (A) a resin containing a repeating unit represented by formula (I); and (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation: wherein AR represents an aryl group; Rn represents an alkyl group, a cycloalkyl group or an aryl group; and A represents an atom or group selected from the group consisting of a hydrogen atom, an alkyl group, a halogen atom, a cyano group and an alkyloxycarbonyl group, and a pattern forming method using the resist composition.
摘要:
A positive resist composition, includes: (B) a resin containing a repeating unit represented by formula (Ia) or (Ib) as defined in the specification, which decomposes under an action of an acid to increase a solubility of the resin (B) in an aqueous alkali solution; and (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method uses the composition.
摘要:
A positive resist composition, includes: (B) a resin containing a repeating unit represented by formula (Ia) or (Ib) as defined in the specification, which decomposes under an action of an acid to increase a solubility of the resin (B) in an aqueous alkali solution; and (A) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and a pattern forming method uses the composition.
摘要:
A positive resist composition for use with an electron beam, an EUV light or an X ray, the positive resist composition comprising: (A) at least one compound that generates an acid upon treatment with one of an actinic ray and radiation; and (B) a resin that increases a solubility of the resin (B) in an alkaline developer by an action of an acid, wherein the resin (B) comprises a repeating unit having an alicyclic group connected with a fluorine-substituted alcohol residue; and a pattern formation method using the composition.
摘要:
A photosensitive composition comprises (A) a specific compound, which is excellent in sensitivity, resolution, and defocus latitude (DOF), and a pattern-forming method using the photosensitive composition is provided.
摘要:
A resist composition comprising (A) an acid generator represented by formula (1): wherein S1 to S8 each independently represents a substituent; a, n, m, l, k, o, p, q and r each independently represents an integer of 0 to 2; X represents a single bond or a divalent linking group; R1 and R2 each independently represents a hydrogen atom or a substituent, and R1 and R2 may combine with each other to represent a single bond or a divalent linking group; and Y− and Z− each independently represents an organic sulfonate anion.
摘要翻译:一种抗蚀剂组合物,其包含(A)由式(1)表示的酸发生剂:其中S 1至S 8各自独立地表示取代基; a,n,m,l,k,o,p,q和r各自独立地表示0〜2的整数。 X表示单键或二价连接基团; R 1和R 2各自独立地表示氢原子或取代基,R 1和R 2可以 彼此结合以表示单键或二价连接基团; 和Y - Z - 各自独立地表示有机磺酸根阴离子。
摘要:
A positive resist composition for use with an electron beam, an EUV light or an X ray, the positive resist composition comprising: (A) at least one compound that generates an acid upon treatment with one of an actinic ray and radiation; and (B) a resin that increases a solubility of the resin (B) in an alkaline developer by an action of an acid, wherein the resin (B) comprises a repeating unit having an alicyclic group connected with a fluorine-substituted alcohol residue; and a pattern formation method using the composition.
摘要:
A positive resist composition which can be suitably used in an ultramicrolithography process such as production of VLSI or high-capacity microchip and in other photofabrication processes and can ensure good sensitivity, resolution, pattern profile and line edge roughness when irradiated with actinic rays or radiation, particularly, electron beam, X-ray or EUV; and a pattern formation method using the composition, are provided, the positive resist composition comprising (A) a resin comprising a specific acryl-based repeating unit and a specific styrene-based repeating unit, which increases the dissolution rate in an alkali developer by the action of an acid, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and (C) a solvent; and a pattern formation method using the composition.
摘要:
A light-sensitive composition comprising:(a) a polysiloxane compound having at least 1 mol % of a structural unit derived from a product of a thermal cycloaddition reaction between a compound of formula (I), (II), (III) or (IV) and a compound of formula (V), (VI), (VII) or (VIII), and(b) an orthoquinonediazide compound. ##STR1##