公开(公告)号：US07078743B2

公开(公告)日：2006-07-18

申请号：US10834362

申请日：2004-04-29

申请人： Tomohiro Murata ,  Yutaka Hirose ,  Yoshito Ikeda ,  Tsuyoshi Tanaka ,  Kaoru Inoue ,  Daisuke Ueda ,  Yasuhiro Uemoto

发明人： Tomohiro Murata ,  Yutaka Hirose ,  Yoshito Ikeda ,  Tsuyoshi Tanaka ,  Kaoru Inoue ,  Daisuke Ueda ,  Yasuhiro Uemoto

IPC分类号： H01L31/0328

CPC分类号： H01L29/7787 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766

摘要： A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1-xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1-yN; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.

摘要翻译： 半导体器件具有：形成在导电基板上并具有高电阻的Al x Ga 1-x N的缓冲层; 形成在缓冲层上的元件形成层，具有沟道层，由未掺杂的GaN和N型Al y Ga 1-y N制成; 以及选择性地形成在元件形成层上的源电极，漏电极和栅电极。 源电极被填充在设置在缓冲层和元件形成层中的通孔中，因此电连接到导电基板。

公开(公告)号：US07067642B1

公开(公告)日：2006-06-27

申请号：US09889722

申请日：2000-11-22

申请人： Seishi Kato ,  Akihiko Komuro ,  Yutaka Hirose

发明人： Seishi Kato ,  Akihiko Komuro ,  Yutaka Hirose

IPC分类号： C07H21/02 ,  C07H21/04 ,  C12N15/00 ,  C12N15/09 ,  C12N5/00

CPC分类号： C07K14/47 ,  A61K2039/505 ,  C07K16/18

摘要： An isolated and purified human nucleoprotein containing the amino acid sequence of SEQ ID NO:1; a polynucleotide encoding this protein; and an antibody against this protein. The above protein and antibody are useful in diagnosing and treating the pathogenic conditions of cancer, etc. The above polynucleotide is usable in acquiring the protein in a large amount. By screening a low-molecular weight compound binding to this protein, drugs of a novel type (antitumor agents, etc.) can be searched for.

摘要翻译： 包含SEQ ID NO：1的氨基酸序列的分离和纯化的人核蛋白; 编码该蛋白质的多核苷酸; 和针对该蛋白质的抗体。 上述蛋白质和抗体可用于诊断和治疗癌症等病原性病症。上述多核苷酸可用于大量获取蛋白质。 通过筛选与该蛋白质结合的低分子量化合物，可以搜索新型的药物（抗肿瘤剂等）。

公开(公告)号：US20060060895A1

公开(公告)日：2006-03-23

申请号：US11193417

申请日：2005-08-01

申请人： Masahiro Hikita ,  Hiroaki Ueno ,  Yutaka Hirose ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

发明人： Masahiro Hikita ,  Hiroaki Ueno ,  Yutaka Hirose ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

IPC分类号： H01L31/112 ,  H01L29/20 ,  H01L29/80

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/4175

摘要： In the structure of a semiconductor device of the present invention, a first source electrode is connected to a conductive substrate through a via hole, and a second source electrode is formed. Thus, even if a high reverse voltage is applied between a gate electrode and a drain electrode, electric field concentration likely to occur at an edge of the gate electrode closer to the drain electrode can be effectively dispersed or relaxed. Moreover, the conductive substrate is used as a substrate for forming element formation layers, so that a via hole penetrating the substrate to reach the backside thereof does not have to be formed in the conductive substrate. Thus, with the strength necessary for the conductive substrate maintained, the first source electrode can be electrically connected to a backside electrode.

摘要翻译： 在本发明的半导体器件的结构中，第一源极通过通孔与导电性基板连接，形成第二源电极。 因此，即使在栅电极和漏极之间施加高的反向电压，也可以有效地分散或放松在栅电极的靠近漏电极的边缘处可能发生的电场集中。 此外，导电性基板用作形成元件形成层的基板，从而不必在导电性基板上形成贯穿基板到达其背面的通路孔。 因此，由于保持导电基板所需的强度，第一源电极可以电连接到背面电极。

公开(公告)号：US20050189651A1

公开(公告)日：2005-09-01

申请号：US10625546

申请日：2003-07-24

申请人： Yutaka Hirose ,  Yoshito Ikeda ,  Kaoru Inoue

发明人： Yutaka Hirose ,  Yoshito Ikeda ,  Kaoru Inoue

IPC分类号： H01L21/285 ,  H01L23/48 ,  H01L33/00 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/323

CPC分类号： H01L21/28575 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0425 ,  H01S5/32341

摘要： An object of the present invention is to reduce the resistance of an electrode of a Group III nitride semiconductor. A thin Si film and a thin Ti film are formed selectively in a contact formation region on a surface of an AlGaN layer as a Group III nitride semiconductor layer formed on a substrate, and the resulting substrate is heat-treated at a high temperature. By the heat treatment, Si is diffused into the AlGaN layer in the ohmic contact formation region at a concentration of about 1020 cm3. Further, an electron density sufficiently high to provide an ohmic characteristic through a reaction between Si and Ti is provided. Thus, a low resistance TiSi2 portion resulting from the reaction between Si and Ti, a TiN portion resulting from a reaction between Ti and AlGaN and a Group III metal portion of Ga and Al devoid of nitrogen are formed in the contact formation region thereby to provide a low resistance electrode film mainly comprising TiSi2.

摘要翻译： 本发明的目的是降低III族氮化物半导体的电极的电阻。 在AlGaN层的表面上的接触形成区域中选择性地形成薄的Si膜和薄的Ti膜，作为形成在衬底上的III族氮化物半导体层，并将所得到的衬底在高温下进行热处理。 通过热处理，Si在欧姆接触形成区域中扩散到约10 20 cm 3的浓度的AlGaN层中。 此外，提供足够高的电子密度以通过Si和Ti之间的反应提供欧姆特性。 因此，形成由Si和Ti之间的反应产生的低电阻TiSi 2 H 2部分，由Ti和AlGaN之间的反应导致的TiN部分和缺少氮的Ga和Al的III族金属部分 在接触形成区域中，由此提供主要包含TiSi 2 N的低电阻电极膜。

公开(公告)号：US20050139838A1

公开(公告)日：2005-06-30

申请号：US11019768

申请日：2004-12-23

申请人： Tomohiro Murata ,  Yutaka Hirose ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto

发明人： Tomohiro Murata ,  Yutaka Hirose ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto

IPC分类号： H01L21/28 ,  H01L21/335 ,  H01L21/338 ,  H01L29/20 ,  H01L29/423 ,  H01L29/778 ,  H01L29/812 ,  H01L29/04

CPC分类号： H01L29/66871 ,  H01L21/28 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/8128

摘要： A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.

摘要翻译： 本发明的半导体器件包括：III-V族氮化物半导体层，其包括载流子行进的沟道区; 设置在III-V族氮化物半导体层中的沟道区的上部的凹部; 和由形成与半导体层形成肖特基结的导电材料构成的肖特基电极，形成在III-V族氮化物半导体层上的在凹部的凹部和周边部分上方扩散的半导体层上。 深度方向上的凹部的尺寸被设定为使得设置在凹部中的肖特基电极的一部分可以调节在沟道区域中行进的载流子的量。

公开(公告)号：US20050121696A1

公开(公告)日：2005-06-09

申请号：US10927525

申请日：2004-08-27

申请人： Satoshi Nakazawa ,  Yutaka Hirose ,  Tsuyoshi Tanaka

发明人： Satoshi Nakazawa ,  Yutaka Hirose ,  Tsuyoshi Tanaka

IPC分类号： H01L21/331 ,  H01L29/20 ,  H01L29/737 ,  H01L29/739

CPC分类号： H01L29/66318 ,  H01L29/2003 ,  H01L29/7371

摘要： In an npn-type HBT, each of an emitter layer and a collector layer is formed of AlGaN and a base layer is formed of GaN. The emitter layer is in contact with a nitrogen polarity surface of the base layer and the collector layer is in contact with a gallium polarity surface of the base layer. An electric charge is generated at each interface due to a spontaneous polarization and a piezo polarization generated in each of the layers. Because of the electric charge, an internal field is generated so as to accelerate electrons in the base layer.

摘要翻译： 在npn型HBT中，发射极层和集电极层由AlGaN构成，基底层由GaN形成。 发射极层与基极层的氮极性表面接触，并且集电极层与基极层的镓极性表面接触。 由于在各层中产生的自发极化和压电极化，在每个界面产生电荷。 由于电荷，产生内部场以加速基底层中的电子。

公开(公告)号：US5181161A

公开(公告)日：1993-01-19

申请号：US513451

申请日：1990-04-23

申请人： Yutaka Hirose ,  Yutaka Yamanaka ,  Kazuhiro Okanoue

发明人： Yutaka Hirose ,  Yutaka Yamanaka ,  Kazuhiro Okanoue

IPC分类号： G11B7/005 ,  G11B7/13 ,  G11B7/14 ,  G11B11/105

CPC分类号： G11B7/13 ,  G11B11/10515 ,  G11B11/10543 ,  G11B11/10595 ,  G11B7/005 ,  G11B7/14

摘要： An apparatus and a method for reproducing a signal, free of cross-talk and intersymbol interference, from an optical recording medium. The signal reproducing apparatus and method is for use in combination with an optical source for emitting a plurality of light beams directed to a center track, which contains the information to be reproduced, and the tracks adjacent to the center track on a recording medium. The signals received from the reflections of the light beams from the adjacent tracks are processed by a frequency characteristic converter and then added to the signal from the center track to eliminate the cross-talk in the signal from the center track created by the signals from the adjacent tracks.