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    Organic thin-film transistors
    71.
    发明申请
    Organic thin-film transistors 有权
    有机薄膜晶体管

    公开(公告)号：US20070160847A1

    公开(公告)日：2007-07-12

    申请号：US11314687

    申请日：2005-12-21

    Applicant: Beng Ong ,  Yuning Li ,  Yiliang Wu ,  Ping Liu

    Inventor： Beng Ong ,  Yuning Li ,  Yiliang Wu ,  Ping Liu

    IPC: B32B9/04

    CPC classification number: H01L51/0035 ,  C08G61/12 ,  C08G73/026 ,  H01L51/0541 ,  H01L51/0545 ,  Y10T428/31504

    Abstract: An organic thin-film transistor has a p-type semiconducting layer, wherein the semiconducting layer comprises a crystalline conjugated polyarylamine of the chemical structure: wherein R1 through R5 are independently selected from hydrogen, alkyl having from about 1 to about 30 carbon atoms, aryl having from about 6 to about 40 carbon atoms, heteroaryl having from about 3 to about 40 atoms, alkoxy having from about 1 to about 30 carbon atoms, aryloxy having from about 6 to about 40 carbon atoms, and substituted derivatives thereof; wherein A and B are the same or different independently selected from arylenes having from about 6 to about 20 carbon atoms or heteroarylenes having from about 3 to about 20 carbon atoms; and wherein n is the degree of polymerization; and wherein the polyarylamine has a mobility (μ0) of 10−4 cm2/V·sec or greater.

    Abstract translation: 有机薄膜晶体管具有p型半导体层，其中半导体层包含化学结构的结晶共轭多芳基胺：其中R 1至R 5独立地为 选自氢，具有约1至约30个碳原子的烷基，具有约6至约40个碳原子的芳基，具有约3至约40个原子的杂芳基，具有约1至约30个碳原子的烷氧基，具有约1至约30个碳原子的烷氧基， 约6至约40个碳原子，及其取代衍生物; 其中A和B相同或不同，独立地选自具有约6至约20个碳原子的亚芳基或具有约3至约20个碳原子的杂芳基; 并且其中n是聚合度; 并且其中所述聚芳基胺具有10 -4平方厘米/秒/秒或更大的迁移率（μ-O）。

    TFT FABRICATION PROCESS
    73.
    发明申请
    TFT FABRICATION PROCESS 有权
    TFT制造工艺

    公开(公告)号：US20060234430A1

    公开(公告)日：2006-10-19

    申请号：US11276634

    申请日：2006-03-08

    Applicant: Ping Liu ,  Yiliang Wu ,  Beng Ong

    Inventor： Ping Liu ,  Yiliang Wu ,  Beng Ong

    IPC: H01L21/84 ,  H01L21/31

    CPC classification number: H01L29/513 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

    Abstract: A process for fabricating a thin film transistor including: (a) depositing a semiconductor layer; and (b) depositing a multilayer gate dielectric prior to or subsequent to the depositing the semiconductor layer, wherein the multilayer dielectric comprises: (i) a first layer comprising a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material, wherein the first layer is closer to the semiconductor layer than the second layer.

    Abstract translation: 一种制造薄膜晶体管的方法，包括：（a）沉积半导体层; 以及（b）在沉积半导体层之前或之后沉积多层栅极电介质，其中所述多层电介质包括：（i）第一层，其包含选自任选取代的倍半硅氧烷，任选取代的第一材料 倍半硅氧烷 - 金属氧化物杂化组合物，任选取代的硅氧烷 - 金属氧化物杂化组合物及其混合物，和（ii）与第一层接触的第二层，其中第二层包括第二材料，其中第一层为 比第二层更靠近半导体层。

    Multilayer gate dielectric
    74.
    发明申请
    Multilayer gate dielectric 审中-公开
    多层门电介质

    公开(公告)号：US20060231908A1

    公开(公告)日：2006-10-19

    申请号：US11104728

    申请日：2005-04-13

    Applicant: Ping Liu ,  Yiliang Wu ,  Beng Ong

    Inventor： Ping Liu ,  Yiliang Wu ,  Beng Ong

    IPC: H01L29/94

    CPC classification number: H01L29/513 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

    Abstract: An electronic device composed of: a multilayer dielectric including: (i) a first layer composed of a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material.

    Abstract translation: 一种电子器件，包括：多层电介质，其包括：（i）由选自任选取代的倍半硅氧烷，任选取代的倍半硅氧烷 - 金属氧化物杂化组合物，任选取代的硅氧烷 - 金属氧化物组成的组中的第一材料构成的第一层 杂化组合物及其混合物，和（ii）与第一层接触的第二层，其中第二层包含第二材料。

    Processes to prepare small molecular thiophene compounds
    75.
    发明授权
    Processes to prepare small molecular thiophene compounds 有权
    制备小分子噻吩化合物的方法

    公开(公告)号：US07102017B2

    公开(公告)日：2006-09-05

    申请号：US10865029

    申请日：2004-06-10

    Applicant: Ping Liu ,  Yiliang Wu ,  Beng S. Ong ,  Maria Birau

    Inventor： Ping Liu ,  Yiliang Wu ,  Beng S. Ong ,  Maria Birau

    IPC: C07D409/00

    CPC classification number: C08G61/126 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0541 ,  H01L51/0545

    Abstract: A process composed of subjecting a reaction mixture comprising a reaction medium, a coupling agent, and a precursor to a coupling temperature to preferentially form a desired small molecular thiophene compound in a single-step synthesis, wherein the precursor consists of: (i) an optional divalent linkage, and (ii) a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position.

    Abstract translation: 一种方法是将包含反应介质，偶联剂和前体的反应混合物与偶合温度进行反应，以在单步合成中优先形成所需的小分子噻吩化合物，其中前体由以下物质组成：（i） 任选的二价键，和（ii）多个噻吩单元，每个噻吩单元由结构（A）表示，其中每个噻吩单元在第二环位置和第五环位置中的任一个或两个结合。

    Dielectric materials for electronic devices
    76.
    发明申请
    Dielectric materials for electronic devices 有权
    用于电子设备的电介质材料

    公开(公告)号：US20060097360A1

    公开(公告)日：2006-05-11

    申请号：US10982472

    申请日：2004-11-05

    Applicant: Yiliang Wu ,  Beng Ong ,  Ping Liu

    Inventor： Yiliang Wu ,  Beng Ong ,  Ping Liu

    IPC: H01L23/58

    CPC classification number: H01L23/5329 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    Abstract: A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a siloxane or silsesquioxane. The siloxy/metal oxide hybrid composition is useful for the preparation of dielectric layers for thin film transistors using solution deposition techniques

    Abstract translation: 本文提供由甲硅烷氧基/金属氧化物杂化组合物制备的电介质材料，以及包括这种介电材料的电子器件如薄膜晶体管。 甲硅烷氧基/金属氧化物杂化组合物包含甲硅烷氧基组分，例如硅氧烷或倍半硅氧烷。 甲硅烷氧基/金属氧化物杂化组合物可用于使用溶液沉积技术制备用于薄膜晶体管的电介质层

    Device with small molecular thiophene compound
    77.
    发明申请
    Device with small molecular thiophene compound 有权
    具有小分子噻吩化合物的装置

    公开(公告)号：US20050276981A1

    公开(公告)日：2005-12-15

    申请号：US10865445

    申请日：2004-06-10

    Applicant: Beng Ong ,  Ping Liu ,  Maria Birau ,  Yiliang Wu

    Inventor： Beng Ong ,  Ping Liu ,  Maria Birau ,  Yiliang Wu

    IPC: B32B9/04 ,  H01L51/05 ,  H01L51/30

    CPC classification number: H01L51/0036 ,  H01L51/0052 ,  H01L51/0068 ,  H01L51/0541 ,  H01L51/0545 ,  Y10T428/31504

    Abstract: An electronic device comprising a semiconductor layer in contact with a number of electrodes, wherein the semiconductor layer includes a small molecular thiophene compound consisting of a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein there is at least one thiophene unit where R1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units there is excluded the simultaneous presence of the same or different R1 at the 3-position of one thiophene unit and at the 3′-position of the other thiophene unit.

    Abstract translation: 一种电子器件，包括与多个电极接触的半导体层，其中所述半导体层包括由多个噻吩单元组成的小分子噻吩化合物，每个噻吩单元由结构（A）表示，其中每个噻吩单元以 第二环位置和第五环位置中的任一个或两个，其中存在至少一个噻吩单元，其中R 1存在于第三环位置或第四环位置处，或者在第三环位置处 环位置和第四环位置，其中对于任何两个相邻的噻吩单元，排除了在一个噻吩单元的3位和3'位上同时存在相同或不同的R 1' 其他噻吩单元的位置。

    Suture securing tool
    79.
    发明授权
    Suture securing tool 失效
    缝合固定工具

    公开(公告)号：US06932835B2

    公开(公告)日：2005-08-23

    申请号：US10390304

    申请日：2003-03-17

    Applicant: Peter M. Bonutti ,  Matthew J. Cremens ,  Ping Liu

    Inventor： Peter M. Bonutti ,  Matthew J. Cremens ,  Ping Liu

    IPC: A61B17/04

    CPC classification number: A61B17/0487 ,  A61B2017/0445 ,  A61B2017/045 ,  A61B2017/0454 ,  A61B2017/0456 ,  A61B2017/0458 ,  A61B2017/0464 ,  A61B2017/0488 ,  A61B2017/0496

    Abstract: The present invention relates to a suture securing tool for securing a suture against body tissue with a suture retainer. The tool includes first, second, and third force application assemblies. The first force application assembly is connectable with at least one end portion of the suture for tensioning the suture with a suture tensioning force which is a function of suture size and strength. The second force application assembly presses the suture retainer against the body tissue and has an opening through which at least one end portion of the suture is extendable. The third force application assembly plastically deforms the suture retainer to thereby secure the suture against body tissue.

    Abstract translation: 缝线固定工具技术领域本发明涉及一种用缝合线固定器将缝合线固定在身体组织上的缝线固定工具。 该工具包括第一，第二和第三力应用程序组件。 第一力施加组件可与缝合线的至少一个端部连接，以用缝合线尺寸和强度的函数缝合张紧力张紧缝合线。 第二力施加组件将缝合线保持器压靠在身体组织上并且具有开口，缝合线的至少一个端部可以通过该开口延伸。 第三力施加组件使缝线保持器塑性变形，从而将缝线固定抵靠身体组织。

    Polythiophenes and devices thereof
    80.
    发明申请
    Polythiophenes and devices thereof 有权
    聚噻吩及其装置

    公开(公告)号：US20050159580A1

    公开(公告)日：2005-07-21

    申请号：US11032711

    申请日：2005-01-10

    Applicant: Ping Liu ,  Yiliang Wu ,  Lu Jiang ,  Beng Ong

    Inventor： Ping Liu ,  Yiliang Wu ,  Lu Jiang ,  Beng Ong

    IPC: C08G61/12 ,  H01B1/12 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  C08G75/00

    CPC classification number: C08G61/126 ,  C08G2261/1424 ,  C08G2261/3223 ,  H01B1/127 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0541 ,  H01L51/0545

    Abstract: An electronic device containing a polythiophene prepared by a metal halide-mediated coupling polymerization in an appropriate solvent, and which polythiophene is comprised of at least one monomer unit selected from the group consisting of 2,5-thienylene (or 2,5-thiophenediyl) (I), 2,5-thienylene (or 2,5-thiophenediyl) (II), and a divalent linkage D wherein, for example, A is alkyl, alkoxy or derivatives thereof; B is a hydrogen atom, a small substituent like alkyl or alkoxy.

    Abstract translation: 一种含有通过金属卤化物介导的偶联聚合在合适溶剂中制备的聚噻吩的电子器件，该聚噻吩由至少一种选自2,5-亚噻吩基（或2,5-噻吩二基） （I），2,5-亚噻吩基（或2,5-噻吩二基）（II）和二价键D，其中例如A是烷基，烷氧基或其衍生物; B是氢原子，小的取代基如烷基或烷氧基。

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