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    Magnetoresistance element, magnetic memory, and magnetic head
    77.
    发明申请
    Magnetoresistance element, magnetic memory, and magnetic head 审中-公开
    磁阻元件，磁记忆体和磁头

    公开(公告)号：US20060114716A1

    公开(公告)日：2006-06-01

    申请号：US11335468

    申请日：2006-01-20

    申请人： Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Yoshiaki Saito

    发明人： Tadashi Kai ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Yoshiaki Saito

    IPC分类号： G11C11/00

    CPC分类号： G11B5/3906 ,  G11C11/16

    摘要： There is provided a magnetoresistance element including a free layer that includes a first ferromagnetic layer and a second ferromagnetic layer whose magnetization directions are equal to each other and a nonmagnetic film intervening between the first and second ferromagnetic layers, a pinned layer including a third ferromagnetic layer that faces the free layer, and a nonmagnetic layer intervening between the free layer and the pinned layer, the nonmagnetic film containing a material selected from the group including titanium, vanadium, zirconium, niobium, molybdenum, technetium, hafnium, tungsten, rhenium, alloys thereof, semiconductors and insulators.

    摘要翻译： 提供了包括自由层的磁阻元件，该自由层包括第一铁磁层和其磁化方向彼此相等的第二铁磁层和介于第一和第二铁磁层之间的非磁性膜，包括第三铁磁层 面向自由层和介于自由层和被钉扎层之间的非磁性层，非磁性膜含有选自钛，钒，锆，铌，钼，锝，铪，钨，铼，合金中的材料 半导体和绝缘体。

    Magnetoresistive element and method of manufacturing the same
    79.
    发明授权
    Magnetoresistive element and method of manufacturing the same 有权
    磁阻元件及其制造方法

    公开(公告)号：US08716818B2

    公开(公告)日：2014-05-06

    申请号：US13428465

    申请日：2012-03-23

    申请人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

    发明人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

    IPC分类号： H01L29/82 ,  G11C11/02

    CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.

    摘要翻译： 根据一个实施例，磁阻元件包括具有可变和垂直磁化的存储层，存储层上的隧道势垒层，在隧道势垒层上具有不变和垂直磁化的参考层，参考上的硬掩模层 层和在参考层和硬掩模层的侧壁上的侧壁间隔层。 参考层的面内尺寸小于存储层的面内尺寸。 存储层和参考层的面内尺寸之差为2nm以下。 侧壁间隔层包括选自金刚石，DLC，BN，SiC，B4C，Al2O3和AlN的材料。

    MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME
    80.
    发明申请
    MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
    磁性元件及其制造方法

    公开(公告)号：US20130001652A1

    公开(公告)日：2013-01-03

    申请号：US13428465

    申请日：2012-03-23

    申请人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

    发明人： Masatoshi Yoshikawa ,  Satoshi Seto ,  Hideaki Harakawa ,  Jyunichi Ozeki ,  Tatsuya Kishi ,  Keiji Hosotani

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： According to one embodiment, a magnetoresistive element includes a storage layer having a variable and perpendicular magnetization, a tunnel barrier layer on the storage layer, a reference layer having an invariable and perpendicular magnetization on the tunnel barrier layer, a hard mask layer on the reference layer, and a sidewall spacer layer on sidewalls of the reference layer and the hard mask layer. An in-plane size of the reference layer is smaller than an in-plane size of the storage layer. A difference between the in-plane sizes of the storage layer and the reference layer is 2 nm or less. The sidewall spacer layer includes a material selected from a group of a diamond, DLC, BN, SiC, B4C, Al2O3 and AlN.

    摘要翻译： 根据一个实施例，磁阻元件包括具有可变和垂直磁化的存储层，存储层上的隧道势垒层，在隧道势垒层上具有不变和垂直磁化的参考层，参考上的硬掩模层 层和在参考层和硬掩模层的侧壁上的侧壁间隔层。 参考层的面内尺寸小于存储层的面内尺寸。 存储层和参考层的面内尺寸之差为2nm以下。 侧壁间隔层包括选自金刚石，DLC，BN，SiC，B4C，Al2O3和AlN的材料。