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    Resist composition and patterning process
    71.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US06399274B1

    公开(公告)日：2002-06-04

    申请号：US09694706

    申请日：2000-10-24

    申请人： Takeshi Kinsho ,  Tsunehiro Nishi ,  Koji Hasegawa ,  Takeru Watanabe ,  Jun Hatakeyama

    发明人： Takeshi Kinsho ,  Tsunehiro Nishi ,  Koji Hasegawa ,  Takeru Watanabe ,  Jun Hatakeyama

    IPC分类号： G03F7004

    CPC分类号： G03F7/039 ,  G03F7/0045

    摘要： A resist composition contains as a base resin a polymer comprising recurring units of the formula (1-1) or (1-2) and having a Mw of 1,000-500,000. R1 is H, methyl or CO2R2, R2 is a straight, branched or cyclic C1-15 alkyl group, R3 is hydrogen, methyl or CH2CO2R2, R4 is an acid labile group, i is an integer of 1 to 4, and k is equal to 0 or 1. The resist composition has significantly improved sensitivity, resolution and etching resistance and is very useful in precise microfabrication.

    摘要翻译： 抗蚀剂组合物含有作为基础树脂的包含式（1-1）或（1-2）的重复单元并且具有1,000-500,000的Mw的聚合物.R1是H，甲基或CO 2 R 2，R 2是直链，支链的 或环状C 1-15烷基，R 3是氢，甲基或CH 2 CO 2 R 2，R 4是酸不稳定基团，i是1至4的整数，并且k等于0或1.抗蚀剂组合物具有显着提高的灵敏度，分辨率 和抗蚀刻性，并且在精密微细加工中非常有用。

    RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS
    73.
    发明申请
    RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS 有权
    电阻修饰组合物和图案形成工艺

    公开(公告)号：US20100297563A1

    公开(公告)日：2010-11-25

    申请号：US12785930

    申请日：2010-05-24

    申请人： Takeru Watanabe ,  Kazuhiro Katayama ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    发明人： Takeru Watanabe ,  Kazuhiro Katayama ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0273

    摘要： A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

    摘要翻译： 图案化工艺包括（1）将第一正性抗蚀剂组合物涂覆在基材上，烘烤，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上 加热进行改性处理，（3）涂布第二正性抗蚀剂组合物，烘烤，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 抗蚀剂改性组合物包括含有式（1）的重复单元的基础树脂，其中A1是亚烷基，R1是H或甲基，R2是烷基或键合在一起形成含氮杂环，和醇类溶剂。

    Tertiary amine compounds having an ester structure and processes for preparing same
    74.
    发明授权
    Tertiary amine compounds having an ester structure and processes for preparing same 有权
    具有酯结构的叔胺化合物及其制备方法

    公开(公告)号：US07084303B2

    公开(公告)日：2006-08-01

    申请号：US10127120

    申请日：2002-04-22

    申请人： Takeru Watanabe ,  Koji Hasegawa ,  Takeshi Kinsho ,  Jun Hatakeyama

    发明人： Takeru Watanabe ,  Koji Hasegawa ,  Takeshi Kinsho ,  Jun Hatakeyama

    IPC分类号： C07C211/00

    CPC分类号： C07D307/33 ,  C07C229/12 ,  C07C229/16 ,  C07C2601/14 ,  C07D307/12 ,  C07D309/12 ,  C07D317/24 ,  G03F7/0045 ,  G03F7/0388 ,  G03F7/0392 ,  G03F7/0397

    摘要： The present invention provides ester group-containing tertiary amine compounds of the formula (R1OCH2CH2)nN(CH2CH2CO2R2)3-n which, when used as additives in chemical amplification photolithography, can yield photoresists having a high resolution and an excellent focus margin. The present invention also provides a process comprising the step of subjecting a primary or secondary amine compound to Michael addition to an acrylic ester compound; a process comprising the steps of subjecting monoethanolamine or diethanolamine to Michael addition to an acrylic ester compound so as to form an ester group-containing amine compound and introducing a R1 group to the resultant ester group-containing amine compound; and a process comprising the step of effecting the ester exchange reaction of an ester group-containing tertiary amine with R2OH.

    摘要翻译： 本发明提供了式（R 1）2 OCH 2 CH 2 N酯的含酯基的叔胺化合物 > N（CH 2 CH 2）2 CO 2 N 2 - （CH 2）3 - n - 当用作化学放大光刻中的添加剂时，可以产生具有高分辨率和优异聚焦余量的光致抗蚀剂。 本发明还提供了一种方法，其包括使伯胺或仲胺化合物与丙烯酸酯化合物进行迈克尔加成步骤; 一种方法包括以下步骤：将一乙醇胺或二乙醇胺加入到丙烯酸酯化合物中以形成含酯基的胺化合物并将R 1 O 2基团引入所得的含酯基胺 复合; 以及包括使含酯基的叔胺与R 2 OH进行酯交换反应的步骤的方法。

    Polymer, resist composition and patterning process
    75.
    发明授权
    Polymer, resist composition and patterning process 失效
    聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US06509135B2

    公开(公告)日：2003-01-21

    申请号：US09797880

    申请日：2001-03-05

    申请人： Tsunehiro Nishi ,  Koji Hasegawa ,  Takeru Watanabe ,  Takeshi Kinsho ,  Jun Hatakeyama

    发明人： Tsunehiro Nishi ,  Koji Hasegawa ,  Takeru Watanabe ,  Takeshi Kinsho ,  Jun Hatakeyama

    IPC分类号： G03F7004

    CPC分类号： C08F32/08 ,  G03F7/0045 ,  G03F7/039

    摘要： A polymer comprising recurring units of formula (1) and having a Mw of 1,000-500,000 is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is alkyl, R4 is H, alkyl, alkoxyalkyl or acyl, R5 and R15 are acid labile groups, and at least one of R6 to R9 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the remainders are H or alkyl, at least one of R10 to R13 is a monovalent hydrocarbon group containing a —CO2— partial structure, and the remainders are H or alkyl, R14 is a polycyclic hydrocarbon group or polycyclic hydrocarbon-containing alkyl group, Z is a trivalent hydrocarbon group, X is —CH2— or —O—, k=0 or 1, x is>0, a, b, c and d are≧0, satisfying x+a+b+c+d=1. A resist composition comprising the polymer has significantly improved sensitivity, resolution and etching resistance and is very useful in microfabrication.

    摘要翻译： 提供了包含式（1）的重复单元并且具有1,000-500,000的Mw的聚合物.R1是H，甲基或CH2CO2R3，R2是H，甲基或CO2R3，R3是烷基，R4是H，烷基，烷氧基烷基或酰基 ，R 5和R 15是酸不稳定基团，R6至R9中的至少一个是含羧基或含羟基的一价烃基，剩余物为H或烷基，R 10至R 13中的至少一个为含有 -CO 2部分结构，其余为H或烷基，R 14为多环烃基或含多环烃基的烷基，Z为三价烃基，X为-CH 2 - 或-O-，k = 0或1 ，x为> 0，a，b，c和d为> = 0，满足x + a + b + c + d = 1。 包含聚合物的抗蚀剂组合物具有显着提高的灵敏度，分辨率和耐蚀刻性，并且在微细加工中非常有用。

    Patterning process and resist composition
    78.
    发明授权
    Patterning process and resist composition 有权
    图案化过程和抗蚀剂组成

    公开(公告)号：US08507175B2

    公开(公告)日：2013-08-13

    申请号：US12905426

    申请日：2010-10-15

    申请人： Jun Hatakeyama ,  Masaki Ohashi ,  Youichi Ohsawa ,  Kazuhiro Katayama

    发明人： Jun Hatakeyama ,  Masaki Ohashi ,  Youichi Ohsawa ,  Kazuhiro Katayama

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/028

    CPC分类号： G03F7/0045 ,  G03F7/0397 ,  G03F7/095

    摘要： The process forms a pattern by applying a resist composition onto a substrate to form a resist film, baking, exposure, post-exposure baking, and development. The resist composition comprises a polymer comprising recurring units having an acid labile group and substantially insoluble in alkaline developer, a PAG, a PBG capable of generating an amino group, a quencher for neutralizing the acid from PAG for inactivation, and an organic solvent. A total amount of amino groups from the quencher and PBG is greater than an amount of acid from PAG. An unexposed region and an over-exposed region are not dissolved in developer whereas only an intermediate exposure dose region is dissolved in developer. Resolution is doubled by splitting a single line into two through single exposure and development.

    摘要翻译： 该方法通过将抗蚀剂组合物施加到基底上以形成抗蚀剂膜，烘烤，曝光，曝光后烘烤和显影来形成图案。 抗蚀剂组合物包含聚合物，其包含具有酸不稳定基团并且基本上不溶于碱性显影剂的重复单元，PAG，能够产生氨基的PBG，用于中和PAG酸失活的猝灭剂和有机溶剂。 来自猝灭剂和PBG的氨基的总量大于来自PAG的酸的量。 未曝光区域和过度曝光区域不溶解在显影剂中，而只有中间曝光剂量区域溶解在显影剂中。 通过单次曝光和开发将单线分成两组，分辨率翻了一番。

    PATTERNING PROCESS AND RESIST COMPOSITION
    79.
    发明申请
    PATTERNING PROCESS AND RESIST COMPOSITION 有权
    绘图工艺和耐腐蚀组合物

    公开(公告)号：US20110033803A1

    公开(公告)日：2011-02-10

    申请号：US12849344

    申请日：2010-08-03

    申请人： Jun Hatakeyama ,  Kazuhiro Katayama ,  Youichi Ohsawa ,  Masaki Ohashi

    发明人： Jun Hatakeyama ,  Kazuhiro Katayama ,  Youichi Ohsawa ,  Masaki Ohashi

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/004 ,  G03F7/0035 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041

    摘要： A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units, acid labile group-containing recurring units and carbamate-containing recurring units, and a photoacid generator onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, heating the first resist pattern for inactivation to acid, coating a second positive resist composition comprising a C3-C8 alcohol and an optional C6-C12 ether onto the first resist pattern-bearing substrate to form a second resist film, patternwise exposure, PEB, and development to form a second resist pattern.

    摘要翻译： 通过将包含含内含重复单元，含酸不稳定基团的重复单元和含氨基甲酸酯的重复单元的共聚物和光致酸产生剂的第一正性抗蚀剂组合物涂布在基材上以形成第一抗蚀剂膜，形成图案形成图案 曝光，PEB和显影以形成第一抗蚀剂图案，将第一抗蚀剂图案加热至酸失活，将包含C 3 -C 8醇和任选的C 6 -C 12醚的第二正性抗蚀剂组合物涂布到第一抗蚀剂图案承载基底上 以形成第二抗蚀剂膜，图案曝光，PEB和显影以形成第二抗蚀剂图案。