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71.发明授权公开(公告)号：US11353726B2
公开(公告)日：2022-06-07
申请号：US17028539
申请日：2020-09-22
摘要： An optoelectronic module comprising at least one semiconductor laser and a photonic chip is described herein. The semiconductor laser emits a primary electromagnetic radiation which is coupled into the photonic chip. The photonic chip comprises at least one first waveguide and at least one optical Bragg reflector having a reflectivity which is modulated by an electrical modulation signal. A secondary electromagnetic radiation is coupled out of the photonic chip by means of at least one second waveguide, wherein the secondary electromagnetic radiation has a dominant wavelength which is modulated in dependence of the electrical modulation signal. Further, a method for operating an optoelectronic module and a Head-Mounted Display comprising an optoelectronic module are provided.
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公开(公告)号：US20220172960A1
公开(公告)日：2022-06-02
申请号：US17442624
申请日：2020-03-20
发明人： Andreas RUDOLPH , Teresa BAUR , Christoph KLEMP
IPC分类号： H01L21/48 , H01L23/538 , H01L21/768
摘要： A method of manufacturing a connection structure may include forming an opening in a first main surface of a first substrate, forming a galvanic seed layer over a first main surface of a carrier substrate, and connecting the first main surface of the first substrate to the first main surface of the carrier substrate, such that the galvanic seed layer is arranged between the first main surface of the first substrate and the first main surface of the carrier substrate. The method may further include galvanically forming a conductive material over the galvanic seed layer.
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公开(公告)号：US11349051B2
公开(公告)日：2022-05-31
申请号：US16409500
申请日：2019-05-10
摘要： An optoelectronic device and a method of producing an optoelectronic device are disclosed. In an embodiment an optoelectronic device includes components including an active layer stack, a housing and electrical contacts and at least one protective layer on a surface of at least one of the components, wherein the at least one protective layer includes a cross-linked material with a three-dimensional polysiloxane-based network.
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74.发明申请公开(公告)号：US20220165924A1
公开(公告)日：2022-05-26
申请号：US17434148
申请日：2019-03-08
发明人： Choo Kean Lim , Xiao Fen Hoo , Wan Leng Lim , Ai Cheng Chan
IPC分类号： H01L33/60 , H01L21/683 , H01L25/075 , H01L33/50 , H01L33/54 , H01L33/58
摘要： In an embodiment, a method for producing optoelectronic semiconductor devices includes applying a temporal spacer to protect a light-exit face of an optoelectronic semiconductor chip by applying a photoresist onto a first carrier, subsequently developing the photoresist in places thereby forming the temporal spacer and subsequently mounting the optoelectronic semiconductor chip onto a side of the temporal spacer facing away from the first carrier, forming a reflector in a lateral direction directly around the optoelectronic semiconductor chip and around the temporal spacer, subsequently removing the temporal spacer so that the reflector extends beyond the light-exit face and applying an optical element onto the reflector so that a gap exists between the light-exit face and a light-entrance face of the optical element.
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公开(公告)号：US20220165845A1
公开(公告)日：2022-05-26
申请号：US17439695
申请日：2020-03-13
发明人： Markus Tautz , Matthew John Davies , Martin Welzel
IPC分类号： H01L29/06 , H01L29/20 , H01L21/306
摘要： In an embodiment a method for structuring a semiconductor surface includes providing the semiconductor surface, wherein the semiconductor surface is part of a GaN-semiconductor layer, irradiating the semiconductor surface with an electron beam in order to produce an irradiated section and anisotropic wet-chemical etching of the semiconductor surface, wherein an etching rate in the irradiated section is less than that in an unirradiated section of the semiconductor surface, and wherein no etching mask is applied to the semiconductor surface before anisotropic wet-chemical etching.
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公开(公告)号：US20220158034A1
公开(公告)日：2022-05-19
申请号：US17440190
申请日：2020-03-16
发明人： Ivar Tangring , Michael Huber
摘要： An optoelectronic semiconductor device may include a first and a second semiconductor layer having a first and a second conductivity type. The optoelectronic semiconductor device may include a first contact layer in direct contact with the first semiconductor layer, a first insulating layer formed over the semiconductor layers, and a second current spreading structure electrically connected to the second semiconductor layer. A maximum lateral extension of the second semiconductor layer is greater than a maximum lateral extension of the first semiconductor layer, such that a step structure is formed, and the first insulating layer is formed as a conformal layer over the step structure. A second insulating layer may be arranged between a horizontal surface of the first contact layer and the second current spreading structure. The thickness of the second insulating layer is smaller than the smallest thickness of the first insulating layer over the step structure.
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公开(公告)号：US20220148897A1
公开(公告)日：2022-05-12
申请号：US17440841
申请日：2020-02-25
发明人： Tobias MEYER , Korbinian PERZLMAIER
摘要： A method for sorting optoelectronic semiconductor components is specified. The semiconductor components each include an active region for emission or detection of electromagnetic radiation. The method includes the following steps: introducing the semiconductor components into a sorting region on a specified path; irradiating the optoelectronic semiconductor components with electromagnetic radiation of a first wavelength range to generate dipole moments by charge separation in the active regions of the optoelectronic semiconductor components; and deflecting the optoelectronic semiconductor components from the specified path as a function of their dipole moment by means of a non-homogeneous electromagnetic field. A device for sorting optoelectronic semiconductor components is further specified.
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公开(公告)号：US20220135880A1
公开(公告)日：2022-05-05
申请号：US17431438
申请日：2020-02-14
发明人： Simon Peschke , Stefan Lange
IPC分类号： C09K11/77 , C01B21/082 , H01L33/50 , H01S5/0225
摘要： A phosphor having the general formula EA7A2T1t1T2t2 T3t3NnOo:RE. EA is selected from the group of divalent elements. A is selected from the group of monovalent elements. T1 is selected from the group of trivalent elements. T2 is selected from the group of tetravalent elements. T3 is selected from the group of pentavalent elements. RE is an activator element. 16+3 t1+4 t2+5 t3−3n−2 o=0. t1+t2+t3=5; n+o=16; 0≤t1≤4; 0≤t2≤5; 0≤t3≤5; 0≤n≤9; 7≤o≤16.
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79.发明申请公开(公告)号：US20220131052A1
公开(公告)日：2022-04-28
申请号：US17428721
申请日：2019-03-14
发明人： Ee Lian LEE , Liang Boon YAP , Prakash RAJAH
摘要： In an embodiment an optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a radiation exit surface and side surfaces running transversely with respect to the radiation exit surface, the optoelectronic semiconductor chip configured to emit primary radiation through the radiation exit surface, a conversion element arranged on the radiation exit surface, the conversion element configured to convert at least part of the primary radiation into secondary radiation and including a stack of at least two conversion layers and a reflective element laterally surrounding the optoelectronic semiconductor chip, wherein a lateral extent of the conversion layers decreases from a layer which is closest to the radiation exit surface to a layer which is most distant from the radiation exit surface, wherein the conversion element includes a part laterally extending beyond the radiation exit surface and being concavely curved, wherein the conversion element is partly arranged on the reflective element, and wherein the conversion element is arranged on a concavely curved surface of the reflective element.
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公开(公告)号：US20220131033A1
公开(公告)日：2022-04-28
申请号：US17435321
申请日：2020-02-21
发明人： Andreas Koller , Bernd Mayer
摘要： In an embodiment a growth structure for a radiation-emitting semiconductor component includes a semiconductor substrate containing a material based on arsenide compound semiconductors and a buffer structure arranged on the semiconductor substrate, wherein the buffer structure includes a buffer layer having at least one n-doped layer and wherein the n-doped layer contains oxygen, and a molar fraction of oxygen in the n-doped layer is between 1015 cm−3 and 1019 cm−3, inclusive.
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