公开(公告)号：US20130336572A1

公开(公告)日：2013-12-19

申请号：US13908623

申请日：2013-06-03

Applicant: KLA-Tencor Corporation

Inventor： DongSub Choi ,  Bill Pierson ,  David Tien ,  James Manka ,  Dongsuk Park

IPC: G06T7/00 ,  G03F1/00

CPC classification number: G06T7/0004 ,  G03F1/00 ,  G03F7/70641 ,  G06T7/0002 ,  G06T2207/30148 ,  G06T2207/30168

Abstract: A method for monitoring mask focus includes measuring profile asymmetries in a target feature including sub-resolution assist features and deriving a focus response based on a known correlation between the profile and focus of a corresponding mask. A computer system in a lithographic process may adjust mask focus based on such derived information to conform to a desired fabrication process.

Abstract translation: 用于监测掩模焦点的方法包括测量目标特征中的轮廓不对称性，包括子分辨率辅助特征，并且基于对应掩模的轮廓和焦点之间的已知相关性导出聚焦响应。 光刻工艺中的计算机系统可以基于这样的导出信息来调整掩模焦点以符合所需的制造工艺。

公开(公告)号：US20130335719A1

公开(公告)日：2013-12-19

申请号：US13905529

申请日：2013-05-30

Applicant: Fujitsu Semiconductor Limited

Inventor： Kimie Hatakenaka

IPC: G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/2022 ,  G03F7/70125

Abstract: An exposure method includes: exposing, with a photomask including a shot pattern including chip patterns arranged therein, a plurality of the shot patterns onto a wafer as a first pattern; aligning the photomask on the water so that a first region of the shot pattern overlaps the first pattern, a second region other than the first region of the shot pattern is outside the first pattern, and chip patterns are continuously arranged in the first pattern and the second region; adjusting focus on the water, with the photomask having been aligned on the wafer; and shielding the first region from light and exposing a pattern of the second region onto the wafer as a second pattern.

Abstract translation: 曝光方法包括：利用包括其中布置有芯片图案的照片图案的光掩模将多个照片图案作为第一图案曝光到晶片上; 对准水上的光掩模，使得射出图案的第一区域与第一图案重叠，除了图案的第一区域之外的第二区域在第一图案之外，并且芯片图案以第一图案连续布置，并且 第二区 调整焦点在水上，光掩模已经对准在晶片上; 并且将所述第一区域遮挡光并将所述第二区域的图案作为第二图案曝光到所述晶片上。

公开(公告)号：US20130271740A1

公开(公告)日：2013-10-17

申请号：US13853407

申请日：2013-03-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Richard QUINTANILHA

IPC: G03F1/00 ,  G01N21/93

CPC classification number: G03F7/70308 ,  G01N21/93 ,  G01N21/956 ,  G03F1/144 ,  G03F7/70641 ,  G03F7/70683

Abstract: A method uses a lithographic apparatus to form an inspection target structure upon a substrate. The method comprises forming the periphery of the inspection target structure so as to provide a progressive optical contrast transition between the inspection target structure and its surrounding environment. This may be achieved by providing a progressive change in the optical index at the periphery of the target structure.

Abstract translation: 一种方法使用光刻设备在基板上形成检查目标结构。 该方法包括形成检查对象结构的周边，以便在检查目标结构及其周围环境之间提供逐行的光学对比度过渡。 这可以通过提供目标结构的周边处的光学折射率的逐渐变化来实现。

公开(公告)号：US20130230798A1

公开(公告)日：2013-09-05

申请号：US13762476

申请日：2013-02-08

Applicant: CANON KABUSHIKI KAISHA

Inventor： Hironori Maeda

IPC: G01B11/14

CPC classification number: G03F9/7084 ,  G01B11/002 ,  G01B11/0608 ,  G01B11/14 ,  G01N21/41 ,  G01S17/88 ,  G03F7/70641 ,  G03F9/7026 ,  G03F9/7057

Abstract: A detection apparatus, which detects a mark formed on a lower surface of a target object, includes: a first detector which illuminates the mark from an upper surface side of the target object to detect an image of the illuminated mark; a second detector which detects an upper surface position of the target object; and a processor which obtains information indicating a focus position to focus on the mark in the first detector, based on the upper surface position detected by the second detector.

Abstract translation: 检测装置，其检测形成在目标物体的下表面上的标记，包括：第一检测器，其从所述目标物体的上表面侧照射所述标记，以检测所述照明标记的图像; 第二检测器，其检测目标物体的上表面位置; 以及处理器，其基于由第二检测器检测到的上表面位置，获得指示聚焦位置以聚焦在第一检测器中的标记的信息。

公开(公告)号：US20130162964A1

公开(公告)日：2013-06-27

申请号：US13686844

申请日：2012-11-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Ivo Adam Johannes THOMAS ,  Siebe LANDHEER

IPC: G03F7/20

CPC classification number: G03F7/70641

Abstract: Systems and methods provide the use of a two or three plate Alvarez lens located in a field plane of a projection lens of a lithographic apparatus. The Alvarez lens can be used to modify the shape of the focal plane to match a previously determined surface topography, while at the same time the Alvarez lens can be designed to include a built-in correction for astigmatism and other residual Zernike errors that would otherwise be introduced.

Abstract translation: 系统和方法提供了位于光刻设备的投影透镜的场平面中的两个或三个平板Alvarez透镜的使用。 Alvarez透镜可用于修改焦平面的形状以匹配先前确定的表面形貌，而同时Alvarez透镜可被设计为包括用于散光和其他残留Zernike误差的内置校正 被介绍。

公开(公告)号：US20130040230A1

公开(公告)日：2013-02-14

申请号：US13568996

申请日：2012-08-07

Applicant: Nicolas Spaziani ,  Jean Massin

Inventor： Nicolas Spaziani ,  Jean Massin

IPC: G03F1/44 ,  G06F15/00 ,  G03F7/20

CPC classification number: G03F7/70641 ,  G03F7/2037 ,  G03F7/703 ,  G03F7/70625 ,  Y10S430/143

Abstract: In one or more embodiments, the disclosure relates to a method of setting a photolithography exposure machine, comprising: forming on a photolithography mask test patterns and circuit patterns, transferring the patterns to a resin layer covering a wafer, measuring a critical dimension of each test pattern transferred, and determining a focus setting error value of the photolithography machine from the measure of the critical dimension of each pattern, the test patterns formed on the mask comprising a first reference test pattern and a second test pattern forming for a photon beam emitted by the photolithography machine and going through the mask, an optical path having a length different from an optical path formed by the first test pattern and the circuit patterns formed on the mask.

Abstract translation: 在一个或多个实施例中，本公开涉及一种设置光刻曝光机的方法，包括：在光刻掩模上形成测试图案和电路图案，将图案转移到覆盖晶片的树脂层，测量每个测试的临界尺寸 图案转印，以及根据每个图案的临界尺寸的测量来确定光刻机的聚焦设置误差值，所述掩模上形成的测试图案包括第一参考测试图案和形成用于光子束发射的光子束的第二测试图案 光刻机并通过掩模，具有与由第一测试图案形成的光路的长度不同的光路和形成在掩模上的电路图案。

公开(公告)号：US20130004056A1

公开(公告)日：2013-01-03

申请号：US13608776

申请日：2012-09-10

Applicant: Xin Zhou ,  Yaogang Lian ,  Robert E. Gleason

Inventor： Xin Zhou ,  Yaogang Lian ,  Robert E. Gleason

IPC: G06K9/00

CPC classification number: G03F7/705 ,  G03F7/70516 ,  G03F7/70641

Abstract: A technique for determining a set of calibration parameters for use in a model of a photo-lithographic process is described. In this calibration technique, images of a test pattern that was produced using the photo-lithographic process are used to determine corresponding sets of calibration parameters. These images are associated with at least three different focal planes in an optical system, such as a photo-lithographic system that implements the photo-lithographic process. Moreover, an interpolation function is determined using the sets of calibration parameters. This interpolation function can be used to determine calibration parameters at an arbitrary focal plane in the photo-lithographic system for use in simulations of the photolithographic process, where the set of calibration parameters are used in a set of transmission cross coefficients in the model of the photo-lithographic process.

Abstract translation: 描述了用于确定用于光刻工艺的模型中的一组校准参数的技术。 在该校准技术中，使用使用光刻工艺制作的测试图案的图像来确定相应的校准参数组。 这些图像与光学系统中的至少三个不同的焦平面相关联，例如实现光刻工艺的光刻系统。 此外，使用校准参数集来确定内插函数。 该内插函数可以用于确定光刻系统中的任意焦平面处的校准参数，以用于光刻工艺的模拟，其中在一组模拟中的传输交叉系数中使用该组校准参数 光刻工艺。

公开(公告)号：US20120300182A1

公开(公告)日：2012-11-29

申请号：US13568645

申请日：2012-08-07

Applicant: Paul Christiaan HINNEN ,  Marcus Adrianus VEN DE KERKHOF ,  Reiner Maria JUNGBLUT ,  Koenraad Remi André Maria SCHREEL

Inventor： Paul Christiaan HINNEN ,  Marcus Adrianus VEN DE KERKHOF ,  Reiner Maria JUNGBLUT ,  Koenraad Remi André Maria SCHREEL

IPC: G03B27/42

CPC classification number: G03B27/32 ,  G03B27/34 ,  G03F7/70625 ,  G03F7/70641

Abstract: A lithographic system includes a monitored lithographic projection apparatus arranged to project a patterned beam onto a substrate. A scatterometer measures a plurality of parameters of the pattern transferred to the substrate including at least one CD-profile parameter and at least one further parameter of the pattern transferred to the substrate which is indicative of a machine setting of the monitored lithographic projection apparatus. A matching system includes a database storing information representative of reference CD values and reference values for the further feature. A comparison arrangement compares the measured values with the corresponding stored values, a lithographic parameter calculation means calculating a corrected set of machine settings for the monitored lithographic apparatus dependent on the differences between the measured and reference values.

Abstract translation: 平版印刷系统包括被设置为将图案化的光束投影到基底上的被监视的光刻投影装置。 散射仪测量转移到衬底的图案的多个参数，包括至少一个CD轮廓参数和传送到衬底的图案的至少一个另外的参数，其指示所监视的光刻投影设备的机器设置。 匹配系统包括存储表示参考CD值的信息的数据库和用于另外的特征的参考值。 比较装置将测量值与对应的存储值进行比较，光刻参数计算装置根据测量值和参考值之间的差异来计算被监测光刻设备的校正的机器设置集合。

公开(公告)号：US08285030B2

公开(公告)日：2012-10-09

申请号：US12724362

申请日：2010-03-15

Applicant: Xin Zhou ,  Yaogang Lian ,  Robert E. Gleason

Inventor： Xin Zhou ,  Yaogang Lian ,  Robert E. Gleason

IPC: G06K9/00

CPC classification number: G03F7/705 ,  G03F7/70516 ,  G03F7/70641

Abstract: A technique for determining a set of calibration parameters for use in a model of a photo-lithographic process is described. In this calibration technique, images of a test pattern that was produced using the photo-lithographic process are used to determine corresponding sets of calibration parameters. These images are associated with at least three different focal planes in an optical system, such as a photo-lithographic system that implements the photo-lithographic process. Moreover, an interpolation function is determined using the sets of calibration parameters. This interpolation function can be used to determine calibration parameters at an arbitrary focal plane in the photo-lithographic system for use in simulations of the photo-lithographic process, where the set of calibration parameters are used in a set of transmission cross coefficients in the model of the photo-lithographic process.

Abstract translation: 描述了用于确定用于光刻工艺的模型中的一组校准参数的技术。 在该校准技术中，使用使用光刻工艺制作的测试图案的图像来确定相应的校准参数组。 这些图像与光学系统中的至少三个不同的焦平面相关联，例如实现光刻工艺的光刻系统。 此外，使用校准参数集来确定内插函数。 该内插函数可以用于确定光刻系统中的任意焦平面处的校准参数，以用于光刻工艺的模拟，其中在一组模型中的传输交叉系数中使用该组校准参数 的光刻工艺。

公开(公告)号：US08245160B2

公开(公告)日：2012-08-14

申请号：US13244051

申请日：2011-09-23

Applicant: Jun Ye ,  Yu Cao ,  Luoqi Chen ,  Hua-Yu Liu

Inventor： Jun Ye ,  Yu Cao ,  Luoqi Chen ,  Hua-Yu Liu

IPC: G06F17/50

CPC classification number: G03F7/70641 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70625

Abstract: A system and a method for creating a focus-exposure model of a lithography process are disclosed. The system and the method utilize calibration data along multiple dimensions of parameter variations, in particular within an exposure-defocus process window space. The system and the method provide a unified set of model parameter values that result in better accuracy and robustness of simulations at nominal process conditions, as well as the ability to predict lithographic performance at any point continuously throughout a complete process window area without a need for recalibration at different settings. With a smaller number of measurements required than the prior-art multiple-model calibration, the focus-exposure model provides more predictive and more robust model parameter values that can be used at any location in the process window.

Abstract translation: 公开了一种用于创建光刻工艺的聚焦曝光模型的系统和方法。 系统和方法利用参数变化的多个维度的校准数据，特别是在曝光 - 散焦过程窗口空间内。 该系统和方法提供了一套统一的模型参数值，可在标称工艺条件下提供更好的模拟精度和鲁棒性，以及能够在整个过程窗口区域内连续预测任何点的光刻性能，而无需 重新校准在不同的设置。 与现有技术的多模型校准相比，要进行的测量数量要少一些，聚焦曝光模型提供了更多的预测性和更健壮的模型参数值，可以在过程窗口中的任何位置使用。