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    Surge protector for telecommunications terminals
    71.
    发明授权
    Surge protector for telecommunications terminals 失效
    电讯终端防雷器

    公开(公告)号：US5057964A

    公开(公告)日：1991-10-15

    申请号：US522510

    申请日：1990-05-14

    Applicant: David K. Bender ,  Richard R. Lathrop, Jr.

    Inventor： David K. Bender ,  Richard R. Lathrop, Jr.

    IPC: H01C7/00 ,  H01C17/23 ,  H04M3/18

    CPC classification number: H04M3/18 ,  H01C17/23 ,  H01C7/003

    Abstract: A surge protector, particularly for protecting components in a telecommunication system, has a thin ceramic substrate on a surface of which is formed a surge protector resistor having a spiral pattern in the form of a double spiral having two parallel resistor paths in series, the width of the paths and the distance between adjacent path lengths being relatively narrow. Resistance trimming links are provided for increasing the length of a resistor path, there being substantially even distribution of surge effects under surge conditions.

    Abstract translation: 浪涌保护器，特别是用于保护电信系统中的部件的电路保护器具有薄陶瓷基板，其表面上形成有电荷保护器电阻器，其具有双螺旋形式的螺旋图案，其具有串联的两个并联电阻器路径，宽度 并且相邻路径长度之间的距离相对较窄。 提供电阻修剪链路用于增加电阻器路径的长度，在浪涌条件下基本上均匀地分布浪涌效应。

    Resistor composition, resistor produced therefrom, and method of producing resistor
    73.
    发明授权
    Resistor composition, resistor produced therefrom, and method of producing resistor 失效
    电阻器组成，由其制造的电阻器，以及制造电阻器的方法

    公开(公告)号：US4949065A

    公开(公告)日：1990-08-14

    申请号：US247064

    申请日：1988-09-20

    Applicant: Hirotoshi Watanabe ,  Toru Ishida

    Inventor： Hirotoshi Watanabe ,  Toru Ishida

    IPC: H01C7/00 ,  H01C17/065

    CPC classification number: H01C7/003 ,  H01C17/06566

    Abstract: A resistor composition containing no boride powder is obtained by mechanical grinding of at least one of silicon, silicon monoxide and higher oxidation state precursor of silicon monoxide; and a borosilicate glass containing at least one of zirconium oxide, vanadium pentoxide, chromium oxide, tungsten trioxide, molybdenum trioxide, manganese oxide, titanium oxide, niobium pentoxide and tantalum pentoxide, which are capable of being reduced with silicon, silicon monoxide or higher oxidation state precursor of silicon monoxide. In a sintering step in a non-oxidizing atmosphere, boron oxide and at least one another oxide contained in the borosilicate glass are reduced by silicon, silicon monoxide, higher oxidation state precursor of silicon monoxide or silicide, and metal elements of the oxides contained in the glass combine with each other, so that fine particles of boride are precipitated around glass particles to form a graze resistor.

    Abstract translation: 不含硼化物粉末的电阻组合物通过机械研磨硅，一氧化硅和较高氧化态的一氧化硅前体中的至少一种而获得; 和含有氧化锰，五氧化二钒，氧化铬，三氧化钨，三氧化钼，氧化锰，氧化钛，五氧化二铌和五氧化二钽中的至少一种的硼硅酸盐玻璃，它们能够用硅，一氧化硅或更高的氧化还原 一氧化硅的状态前体。 在非氧化气氛中的烧结步骤中，硼硅酸盐玻璃中含有的氧化硼和至少一种其它氧化物被硅，一氧化硅，一氧化硅或硅化物的较高氧化态前体以及含有的氧化物的金属元素 玻璃彼此结合，使得细微的硼化物颗粒在玻璃颗粒周围沉淀，形成一个耐火电阻。

    Method of forming a plating layer on ceramic chip surfaces and electronic parts thereby manufactured
    74.
    发明授权
    Method of forming a plating layer on ceramic chip surfaces and electronic parts thereby manufactured 失效
    在陶瓷芯片表面和由此制造的电子部件上形成镀层的方法

    公开(公告)号：US4935305A

    公开(公告)日：1990-06-19

    申请号：US284697

    申请日：1988-12-15

    Applicant: Takashi Kanehiro

    Inventor： Takashi Kanehiro

    IPC: H01G4/12 ,  C23C18/50 ,  H01C7/00 ,  H01C17/18 ,  H01G4/008

    CPC classification number: H01G4/008 ,  C23C18/50 ,  H01C7/003 ,  Y10S204/13 ,  Y10S428/901 ,  Y10T428/31678

    Abstract: This invention relates to a method of forming a plating layer on ceramic chip surfaces by electroless plating, and to electronic parts manufactured by this method. Such electronic parts include a metal film fixed resistor, a capacitor, a resistor for sensing purposes and a patterned substrate, for example. Ceramic chips are immersed in a plating solution containing chromium chloride, nickel sulfide, sodium hypophosphite, a chelating agent and thiourea. Then each ceramic chip is coated with a plating layer by electroless nickel plating while adjusting pH value of the plating solution with a pH regulating liquid. The resulting electronic parts have an initial resistance of 0.02 to 100 ohm or more and a temperature coefficient of resistance of a two-digit figure or less in ppm.

    Abstract translation: 本发明涉及通过化学镀在陶瓷芯片表面上形成镀层的方法以及通过该方法制造的电子部件。 这样的电子部件例如包括金属膜固定电阻器，电容器，用于感测目的的电阻器和图案化衬底。 将陶瓷屑浸入含有氯化铬，硫化镍，次磷酸钠，螯合剂和硫脲的镀液中。 然后通过化学镀镍在每个陶瓷芯片上涂覆镀层，同时用pH调节液体调节镀液的pH值。 所得到的电子部件的初始电阻为0.02〜100欧姆以上，电阻温度系数为2位数以下（ppm）。

    Thick film resistor, method of trimming thick film resistor, and printed circuit board having thick film resistor
    76.
    发明授权
    Thick film resistor, method of trimming thick film resistor, and printed circuit board having thick film resistor 失效
    厚膜电阻器，修整厚膜电阻器的方法和具有厚膜电阻器的印刷电路板

    公开(公告)号：US4580030A

    公开(公告)日：1986-04-01

    申请号：US643675

    申请日：1984-08-22

    Applicant: Makoto Takeuchi

    Inventor： Makoto Takeuchi

    IPC: H01C1/034 ,  H01C7/00 ,  H01C17/00 ,  H01C17/242 ,  H05K1/18 ,  B23K26/00

    CPC classification number: H01C7/003 ,  H01C1/034 ,  H01C17/006 ,  H01C17/242 ,  H05K1/181

    Abstract: A thick film resistor comprises a substrate made of a material which is uneasily damaged by a laser beam which impinges thereon, a resistor body formed on the substrate in the form of a thick film, and a pair of electrodes formed on the substrate. The electrodes are electrically connected to both ends of the resistor body, and the resistor body has a shape such that the substrate is exposed at least in a portion adjacent to one side edge of the resistor body.

    Abstract translation: 厚膜电阻器包括由材料制成的衬底，其被撞击在其上的激光束不稳定地损坏，形成在厚膜上的衬底上的电阻器体和形成在衬底上的一对电极。 电极与电阻体的两端电连接，电阻体的形状至少在与电阻体的一个侧边缘相邻的部分露出。

    Article with electrically-resistive glaze for use in high-electric fields and method of making same
    78.
    发明授权
    Article with electrically-resistive glaze for use in high-electric fields and method of making same 失效
    具有用于高电场的电阻釉的制品及其制造方法

    公开(公告)号：US4091144A

    公开(公告)日：1978-05-23

    申请号：US689266

    申请日：1976-05-24

    Applicant: Joseph Dresner ,  Kenneth Warren Hang

    Inventor： Joseph Dresner ,  Kenneth Warren Hang

    IPC: C03C3/064 ,  C03C3/145 ,  C03C8/14 ,  H01B1/14 ,  H01B1/20 ,  H01C7/00 ,  H01J5/06 ,  H01J29/62 ,  B32B17/06 ,  B32B5/16 ,  H01C8/00

    CPC classification number: H01J5/06 ,  H01B1/14 ,  H01C7/003 ,  Y10T428/256 ,  Y10T428/2991

    Abstract: A substrate, such as a ceramic body, carries a layer of glaze consisting essentially of (a) an inorganic oxide glass matrix that is essentially free from ions which migrate in a high-electric field, (b) about 1 .times. 10.sup.19 to 50 .times. 10.sup.19 antimony cations distributed in each cubic centimeter of the glass matrix, and (c) about 4 to 30 weight percent with respect to the weight of said glaze of discrete tin-oxide particles in the antimony-containing glass matrix. The method comprises dissolving antimony, as a compound thereof, in a glass, mixing together particles of said glass and tin-oxide particles, coating the mixture on a substrate, heating the coated substrate to melt the glass particles while retaining tin oxide in discrete particulate form, and then solidifying the molten coating.

    Abstract translation: 衬底，例如陶瓷体，承载着一层基本上由（a）无机氧化物玻璃基质组成的釉料，该无机氧化物玻璃基质基本上不含在高电场中迁移的离子，（b）约1×1019至50× 分布在每立方厘米玻璃基质中的1019个锑阳离子，和（c）相对于含锑玻璃基质中的离散氧化锡颗粒的釉料的重量约4至30重量％。 该方法包括将锑作为其化合物溶解在玻璃中，将所述玻璃和氧化锡颗粒的颗粒混合在一起，将该混合物涂覆在基材上，加热涂覆的基材以熔化玻璃颗粒，同时将氧化锡保持在离散颗粒中 形成，然后使熔融涂层固化。

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