公开(公告)号：US08673705B2

公开(公告)日：2014-03-18

申请号：US12808397

申请日：2008-12-12

申请人： Taro Morimura ,  Toru Kikuchi ,  Masanori Hashimoto ,  Shin Asari ,  Kazuya Saito ,  Kyuzo Nakamura

发明人： Taro Morimura ,  Toru Kikuchi ,  Masanori Hashimoto ,  Shin Asari ,  Kazuya Saito ,  Kyuzo Nakamura

IPC分类号： H01L21/84

CPC分类号： H01L21/02532 ,  H01L21/02422 ,  H01L21/02675 ,  H01L27/1285 ,  H01L29/66765

摘要： [Object] To provide a method of producing a thin film transistor superior in productivity and capable of preventing variation in transistor characteristics among devices from occurring to improve carrier mobility, and a thin film transistor.[Solving Means] In a method of producing a thin-film transistor according to the present invention, a solid-state green laser is irradiated onto a channel portion of an amorphous silicon film using a source electrode film and a drain electrode film as masks, thereby improving mobility. Since the channel portion of the amorphous silicon film is crystallized by the irradiation of the solid-state green laser, laser oscillation characteristics can be more stable than in a conventional method that uses an excimer laser. Further, laser irradiation onto a large-size substrate at uniform output characteristics in plane becomes possible, with the result that a variation in crystallinity of channel portions among devices can be avoided. Moreover, since a maintenance cycle of a laser oscillator becomes longer, a downtime cost of the apparatus can be reduced and productivity can be improved.

摘要翻译： 本发明提供一种制造生产率优异且能够防止器件中的晶体管特性变化以提高载流子迁移率的薄膜晶体管的制造方法以及薄膜晶体管。 具体实施方式在本发明的薄膜晶体管的制造方法中，使用源电极膜和漏电极膜作为掩模将固态绿色激光照射到非晶硅膜的沟道部上， 从而改善流动性。 由于通过固体绿色激光的照射使非晶硅膜的通道部分结晶，与使用准分子激光的常规方法相比，激光振荡特性可以更稳定。 此外，可以在平面上具有均匀输出特性的大尺寸基板上的激光照射，结果是可以避免器件之间的沟道部分的结晶度的变化。 此外，由于激光振荡器的维护周期变长，所以能够降低设备的停机成本，提高生产率。

公开(公告)号：US20140011343A1

公开(公告)日：2014-01-09

申请号：US14021439

申请日：2013-09-09

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Koichiro TANAKA ,  Tomoaki MORIWAKA

IPC分类号： H01L21/02

CPC分类号： H01L21/02592 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  H01L27/1285

摘要： In the present invention, each laser light emitted from a plurality of lasers is divided, and laser light including at least one laser light that is emitted from a different laser and that has different energy distribution is synthesized with another such laser light, or laser light including at least one laser light that has different energy distribution is synthesized with another such laser light through a convex lens that is set at an angle to the direction each laser light travels, to form laser light having excellent uniformity in energy distribution.

摘要翻译： 在本发明中，从多个激光器发射的各激光被分割，并且使用另一个这样的激光合成包括从不同激光器发射并且具有不同能量分布的至少一个激光的激光或激光 包括具有不同能量分布的至少一种激光通过与每个激光行进的方向成一定角度的凸透镜与另一激光合成，以形成具有优异的能量分布均匀性的激光。

公开(公告)号：US08624252B2

公开(公告)日：2014-01-07

申请号：US13612146

申请日：2012-09-12

申请人： Shinji Maekawa ,  Gen Fujii ,  Hiroko Shiroguchi ,  Masafumi Morisue

发明人： Shinji Maekawa ,  Gen Fujii ,  Hiroko Shiroguchi ,  Masafumi Morisue

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  H01L27/14 ,  H01L29/15 ,  H01L31/036 ,  H01L27/12

CPC分类号： G02B5/201 ,  G03F7/0007 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3281 ,  H01L27/3295 ,  H01L29/66757 ,  H01L29/66765 ,  H01L51/56

摘要： The invention provides a manufacturing method of a substrate having a film pattern including an insulating film, a semiconductor film, a conductive film and the like by simple steps, and also a manufacturing method of a semiconductor device which is low in cost with high throughput and yield. According to the invention, after forming a first protective film which has low wettability on a substrate, a material which has high wettability is applied or discharged on an outer edge of a first mask pattern, thereby a film pattern and a substrate having the film pattern are formed.

摘要翻译： 本发明通过简单的步骤提供了具有包括绝缘膜，半导体膜，导电膜等的膜图案的基板的制造方法，以及低成本，高生产率的半导体器件的制造方法， 产量。 根据本发明，在形成在基材上具有低润湿性的第一保护膜之后，在第一掩模图案的外边缘上施加或排出具有高润湿性的材料，从而形成膜图案和具有膜图案的基板 形成。

公开(公告)号：US08617313B2

公开(公告)日：2013-12-31

申请号：US13547215

申请日：2012-07-12

申请人： James S. Im ,  Paul C. Van Der Wilt

发明人： James S. Im ,  Paul C. Van Der Wilt

IPC分类号： C30B1/04

CPC分类号： H01L21/02686 ,  B23K26/0738 ,  C30B13/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A system for preparing a semiconductor film, the system including: a laser source; optics to form a line beam, a stage to support a sample capable of translation; memory for storing a set of instructions, the instructions including irradiating a first region of the film with a first laser pulse to form a first molten zone, said first molten zone having a maximum width (Wmax) and a minimum width (Wmin), wherein the first molten zone crystallizes to form laterally grown crystals; laterally moving the film in the direction of lateral growth a distance greater than about one-half Wmax and less than Wmin; and irradiating a second region of the film with a second laser pulse to form a second molten zone, wherein the second molten zone crystallizes to form laterally grown crystals that are elongations of the crystals in the first region, wherein laser optics provide Wmax less than 2×Wmin.

摘要翻译： 一种制备半导体膜的系统，该系统包括：激光源; 形成线束的光学元件，支撑能够进行平移的样本的阶段; 用于存储一组指令的存储器，所述指令包括用第一激光脉冲照射所述膜的第一区域以形成第一熔融区，所述第一熔融区具有最大宽度（Wmax）和最小宽度（Wmin），其中 第一熔融区域结晶以形成横向生长的晶体; 在横向生长方向上横向移动薄膜的距离大于约一半Wmax且小于Wmin; 以及用第二激光脉冲照射所述膜的第二区域以形成第二熔融区，其中所述第二熔融区结晶以形成横向生长的晶体，所述晶体是所述第一区域中的晶体的伸长，其中激光光学提供Wmax小于2 ×Wmin。

公开(公告)号：US08557642B2

公开(公告)日：2013-10-15

申请号：US13152065

申请日：2011-06-02

申请人： Kurt A. Schroder ,  Robert P. Wenz

发明人： Kurt A. Schroder ,  Robert P. Wenz

IPC分类号： H01L21/336

CPC分类号： H01L21/428 ,  B29C35/0266 ,  B29C35/0272 ,  B29C35/0805 ,  B29C2035/0855 ,  B29C2035/0877 ,  H01L21/02422 ,  H01L21/02439 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02686 ,  H01L21/02689 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/78603

摘要： A method for thermally processing a minimally absorbing thin film in a selective manner is disclosed. Two closely spaced absorbing traces are patterned in thermal contact with the thin film. A pulsed radiant source is used to heat the two absorbing traces, and the thin film is thermally processed via conduction between the two absorbing traces. This method can be utilized to fabricate a thin film transistor (TFT) in which the thin film is a semiconductor and the absorbers are the source and the drain of the TFT.

公开(公告)号：US08551827B2

公开(公告)日：2013-10-08

申请号：US13771656

申请日：2013-02-20

申请人： Yong-Hwan Park ,  Kyu-Sik Cho ,  Sang-Ho Moon ,  Byoung-Kwon Choo ,  Min-Chul Shin ,  Tae-Hoon Yang ,  Bo-Kyung Choi ,  Won-Kyu Lee ,  Yun-Gyu Lee ,  Joon-Hoo Choi

发明人： Yong-Hwan Park ,  Kyu-Sik Cho ,  Sang-Ho Moon ,  Byoung-Kwon Choo ,  Min-Chul Shin ,  Tae-Hoon Yang ,  Bo-Kyung Choi ,  Won-Kyu Lee ,  Yun-Gyu Lee ,  Joon-Hoo Choi

IPC分类号： H01L21/00

CPC分类号： H01L27/1251 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3262

摘要： An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.

摘要翻译： 一种有机发光二极管显示装置及其制造方法，所述装置包括基板，所述基板包括像素部分和电路部分; 在所述基板的像素部分上的第一半导体层和第二半导体层; 在所述基板的整个表面上的栅极绝缘层; 栅绝缘层上的栅电极，分别对应于第一半导体层和第二半导体层的栅电极; 与栅电极绝缘的源/漏电极，源/漏电极分别连接到第一和第二半导体层; 连接到第一半导体层的源极/漏极的第一电极; 第一电极上的有机层; 有机层上的第二层; 以及在第一半导体层下面的金属催化剂层。

公开(公告)号：US08530900B2

公开(公告)日：2013-09-10

申请号：US13495387

申请日：2012-06-13

申请人： Mitsutaka Matsumoto ,  Yuta Sugawara

发明人： Mitsutaka Matsumoto ,  Yuta Sugawara

IPC分类号： H01L21/8234 ,  H01L27/088

CPC分类号： H01L21/02532 ,  H01L21/02675 ,  H01L27/1281 ,  H01L27/1285

摘要： Preparing a substrate; forming a plurality of gate electrodes above the substrate; forming a gate insulating layer above the gate electrodes; forming an amorphous silicon layer above the gate insulating layer; forming crystalline silicon layer regions by irradiating the amorphous silicon layer in regions above the gate electrodes with a laser beam having a wavelength from 473 nm to 561 nm so as to crystallize the amorphous silicon layer in the regions above the gate electrodes, and forming an amorphous silicon layer region in a region other than the regions above the gate electrodes; and forming source electrodes and drain electrodes above the crystalline silicon layer regions are included, and a thickness of the gate insulating layer and a thickness of the amorphous silicon layer satisfy predetermined expressions.

摘要翻译： 制备底物; 在所述衬底上形成多个栅电极; 在栅电极上方形成栅极绝缘层; 在所述栅绝缘层上方形成非晶硅层; 通过用波长从473nm到561nm的激光束照射栅电极上方的区域中的非晶硅层，以便在栅电极上方的区域中的非晶硅层结晶，形成晶体硅层区域， 在除栅电极上方的区域以外的区域中的硅层区域; 并且包括在晶体硅层区域上方形成源电极和漏电极，并且栅极绝缘层的厚度和非晶硅层的厚度满足预定的表达式。

公开(公告)号：US08530788B2

公开(公告)日：2013-09-10

申请号：US10866802

申请日：2004-06-15

申请人： Koichiro Tanaka ,  Tomoaki Moriwaka

发明人： Koichiro Tanaka ,  Tomoaki Moriwaka

IPC分类号： B23K26/00

CPC分类号： H01L21/02592 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  H01L27/1285

摘要： In the present invention, each laser light emitted from a plurality of lasers is divided, and laser light including at least one laser light that is emitted from a different laser and that has different energy distribution is synthesized with another such laser light, or laser light including at least one laser light that has different energy distribution is synthesized with another such laser light through a convex lens that is set at an angle to the direction each laser light travels, to form laser light having excellent uniformity in energy distribution.

公开(公告)号：US08525070B2

公开(公告)日：2013-09-03

申请号：US11639416

申请日：2006-12-15

申请人： Koichiro Tanaka ,  Yoshiaki Yamamoto

发明人： Koichiro Tanaka ,  Yoshiaki Yamamoto

IPC分类号： B23K26/08 ,  H01L21/324

CPC分类号： H01L27/1266 ,  B23K26/06 ,  B23K26/0624 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0652 ,  B23K26/0665 ,  B23K26/0823 ,  B23K26/0838 ,  B23K26/0869 ,  B23K26/0892 ,  B23K26/1438 ,  B23K26/38 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/42384 ,  H01L29/4908

摘要： A laser irradiation apparatus is provided with a laser oscillator, an articulated beam propagator in which a plurality of pipes are connected to each other in an articulated portion, and a course change means of a laser beam in the articulated portion. At least one pipe of the plurality of pipes includes a transfer lens for suppressing stagger of a laser beam in a traveling direction, in each pipe. The articulated portion produces degree of freedom in disposition of a laser oscillator, and the transfer lens enables suppression of change in beam profile.

摘要翻译： 激光照射装置设置有激光振荡器，铰接光束传播器，其中多个管道在铰接部分中彼此连接，并且铰接部分中的激光束的行程改变装置。 多个管道中的至少一个管道包括用于在每个管道中抑制在行进方向上交错的激光束的转移透镜。 关节部分在激光振荡器的配置中产生自由度，并且转印透镜能够抑制光束轮廓的变化。

公开(公告)号：US08520178B2

公开(公告)日：2013-08-27

申请号：US12844072

申请日：2010-07-27

申请人： Shunpei Yamazaki ,  Hironobu Shoji ,  Ikuko Kawamata

发明人： Shunpei Yamazaki ,  Hironobu Shoji ,  Ikuko Kawamata

IPC分类号： G02F1/1343 ,  B05D5/00 ,  B05D1/32 ,  B05D7/22

CPC分类号： H01L21/76801 ,  H01L21/288 ,  H01L21/76838 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1292 ,  H01L2924/0002 ,  H01L2924/00

摘要： When a conductive layer is formed, a first liquid composition containing a conductive material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern), and a first conductive layer (insulating layer) having a frame-shape is formed. A second liquid composition containing a conductive material is applied so as to fill a space inside the first conductive layer having a frame-shape, whereby a second conductive layer is formed. The first conductive layer and the second conductive layer are formed so as to be in contact with each other, and the first conductive layer is formed so as to surround the second conductive layer. Therefore, the first conductive layer and the second conductive layer can be used as one continuous conductive layer.

摘要翻译： 当形成导电层时，将含有导电材料的第一液体组合物施加在期望形成的图案的外侧（对应于图案的轮廓或边缘部分）和第一导电层（ 绝缘层）形成。 涂布含有导电材料的第二液体组合物，以填充具有框架形状的第一导电层内的空间，由此形成第二导电层。 第一导电层和第二导电层形成为彼此接触，并且第一导电层形成为围绕第二导电层。 因此，第一导电层和第二导电层可以用作一个连续导电层。