公开(公告)号：US20100301339A1

公开(公告)日：2010-12-02

申请号：US12808397

申请日：2008-12-12

申请人： Taro Morimura ,  Toru Kikuchi ,  Masanori Hashimoto ,  Shin Asari ,  Kazuya Saito ,  Kyuzo Nakamura

发明人： Taro Morimura ,  Toru Kikuchi ,  Masanori Hashimoto ,  Shin Asari ,  Kazuya Saito ,  Kyuzo Nakamura

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L21/02532 ,  H01L21/02422 ,  H01L21/02675 ,  H01L27/1285 ,  H01L29/66765

摘要： [Object] To provide a method of producing a thin film transistor superior in productivity and capable of preventing variation in transistor characteristics among devices from occurring to improve carrier mobility, and a thin film transistor.[Solving Means] In a method of producing a thin-film transistor according to the present invention, a solid-state green laser is irradiated onto a channel portion of an amorphous silicon film using a source electrode film and a drain electrode film as masks, thereby improving mobility. Since the channel portion of the amorphous silicon film is crystallized by the irradiation of the solid-state green laser, laser oscillation characteristics can be more stable than in a conventional method that uses an excimer laser. Further, laser irradiation onto a large-size substrate at uniform output characteristics in plane becomes possible, with the result that a variation in crystallinity of channel portions among devices can be avoided. Moreover, since a maintenance cycle of a laser oscillator becomes longer, a downtime cost of the apparatus can be reduced and productivity can be improved.

摘要翻译： 本发明提供一种制造生产率优异且能够防止器件中的晶体管特性变化以提高载流子迁移率的薄膜晶体管的制造方法以及薄膜晶体管。 具体实施方式在本发明的薄膜晶体管的制造方法中，使用源电极膜和漏电极膜作为掩模将固态绿色激光照射到非晶硅膜的沟道部上， 从而改善流动性。 由于通过固体绿色激光的照射使非晶硅膜的通道部分结晶，与使用准分子激光的常规方法相比，激光振荡特性可以更稳定。 此外，可以在平面上具有均匀输出特性的大尺寸基板上的激光照射，结果是可以避免器件之间的沟道部分的结晶度的变化。 此外，由于激光振荡器的维护周期变长，所以能够降低设备的停机成本，提高生产率。

公开(公告)号：US08673705B2

公开(公告)日：2014-03-18

申请号：US12808397

申请日：2008-12-12

申请人： Taro Morimura ,  Toru Kikuchi ,  Masanori Hashimoto ,  Shin Asari ,  Kazuya Saito ,  Kyuzo Nakamura

发明人： Taro Morimura ,  Toru Kikuchi ,  Masanori Hashimoto ,  Shin Asari ,  Kazuya Saito ,  Kyuzo Nakamura

IPC分类号： H01L21/84

CPC分类号： H01L21/02532 ,  H01L21/02422 ,  H01L21/02675 ,  H01L27/1285 ,  H01L29/66765

摘要： [Object] To provide a method of producing a thin film transistor superior in productivity and capable of preventing variation in transistor characteristics among devices from occurring to improve carrier mobility, and a thin film transistor.[Solving Means] In a method of producing a thin-film transistor according to the present invention, a solid-state green laser is irradiated onto a channel portion of an amorphous silicon film using a source electrode film and a drain electrode film as masks, thereby improving mobility. Since the channel portion of the amorphous silicon film is crystallized by the irradiation of the solid-state green laser, laser oscillation characteristics can be more stable than in a conventional method that uses an excimer laser. Further, laser irradiation onto a large-size substrate at uniform output characteristics in plane becomes possible, with the result that a variation in crystallinity of channel portions among devices can be avoided. Moreover, since a maintenance cycle of a laser oscillator becomes longer, a downtime cost of the apparatus can be reduced and productivity can be improved.

摘要翻译： 本发明提供一种制造生产率优异且能够防止器件中的晶体管特性变化以提高载流子迁移率的薄膜晶体管的制造方法以及薄膜晶体管。 具体实施方式在本发明的薄膜晶体管的制造方法中，使用源电极膜和漏电极膜作为掩模将固态绿色激光照射到非晶硅膜的沟道部上， 从而改善流动性。 由于通过固体绿色激光的照射使非晶硅膜的通道部分结晶，与使用准分子激光的常规方法相比，激光振荡特性可以更稳定。 此外，可以在平面上具有均匀输出特性的大尺寸基板上的激光照射，结果是可以避免器件之间的沟道部分的结晶度的变化。 此外，由于激光振荡器的维护周期变长，所以能够降低设备的停机成本，提高生产率。

公开(公告)号：US20110204466A1

公开(公告)日：2011-08-25

申请号：US13061018

申请日：2009-08-28

申请人： Shinichi Asahina ,  Hirota Uchida ,  Shin Asari ,  Masanori Hashimoto ,  Tetsushi Fujinaga ,  Tadamasa Kobayashi ,  Masafumi Wakai ,  Kenichi Imakita ,  Yoshinobu Ue ,  Kazuya Saito ,  Kyuzo Nakamura

发明人： Shinichi Asahina ,  Hirota Uchida ,  Shin Asari ,  Masanori Hashimoto ,  Tetsushi Fujinaga ,  Tadamasa Kobayashi ,  Masafumi Wakai ,  Kenichi Imakita ,  Yoshinobu Ue ,  Kazuya Saito ,  Kyuzo Nakamura

IPC分类号： H01L31/105 ,  H01L31/18 ,  C23C16/22 ,  C23C16/50

CPC分类号： H01L31/077 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/076 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit, in decompression chambers that are different from each other; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer of the second-photoelectric conversion unit which was exposed to the air atmosphere, in the same decompression chamber.

摘要翻译： 一种光电转换装置的制造方法，包括：连续地形成构成第一光电转换单元的第一p型半导体层，第一i型半导体层和第一n型半导体层， 型半导体层构成第二光电转换单元，在彼此不同的减压室中; 将第二p型半导体层暴露于空气气氛中; 以及在暴露于空气气氛的第二光电转换单元的第二p型半导体层上形成构成第二光电转换单元的第二i型半导体层和第二n型半导体层， 在同一减压室内。

公开(公告)号：US20120015473A1

公开(公告)日：2012-01-19

申请号：US13146624

申请日：2010-01-29

申请人： Hiroto Uchida ,  Tetsushi Fujinaga ,  Masafumi Wakai ,  Tadamasa Kobayashi ,  Yoshinobu Ue ,  Kyuzo Nakamura ,  Shin Asari ,  Kazuya Saito ,  Koichi Matsumoto ,  Yasuo Shimizu ,  Katsuhiko Mori

发明人： Hiroto Uchida ,  Tetsushi Fujinaga ,  Masafumi Wakai ,  Tadamasa Kobayashi ,  Yoshinobu Ue ,  Kyuzo Nakamura ,  Shin Asari ,  Kazuya Saito ,  Koichi Matsumoto ,  Yasuo Shimizu ,  Katsuhiko Mori

IPC分类号： H01L31/0352

CPC分类号： C23C16/54 ,  C23C16/24 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device manufacturing method manufactures a photoelectric conversion device in which a first photoelectric conversion unit and a second photoelectric conversion unit are sequentially stacked on a transparent-electroconductive film formed on a substrate. The method includes: forming each of a first p-type semiconductor layer, a first i-type semiconductor layer, a first n-type semiconductor layer, and a second p-type semiconductor layer in a plurality of first plasma CVD reaction chambers; exposing the second p-type semiconductor layer to an air atmosphere; supplying a gas including p-type impurities to inside a second plasma CVD reaction chamber before forming of the second i-type semiconductor layer; forming the second i-type semiconductor layer on the second p-type semiconductor layer that was exposed to an air atmosphere, in the second plasma CVD reaction chamber; and forming the second n-type semiconductor layer on the second i-type semiconductor layer.

摘要翻译： 光电转换装置的制造方法制造光电转换装置，其中第一光电转换单元和第二光电转换单元依次层叠在形成于基板上的透明导电膜上。 该方法包括：在多个第一等离子体CVD反应室中形成第一p型半导体层，第一i型半导体层，第一n型半导体层和第二p型半导体层; 将第二p型半导体层暴露于空气气氛中; 在形成第二i型半导体层之前，将第二等离子体CVD反应室内的p型杂质气体供给; 在第二等离子体CVD反应室中在暴露于空气气氛的第二p型半导体层上形成第二i型半导体层; 以及在第二i型半导体层上形成第二n型半导体层。

公开(公告)号：US20090058265A1

公开(公告)日：2009-03-05

申请号：US12245113

申请日：2008-10-03

申请人： Takashi KOMATSU ,  Kyuzo Nakamura ,  Hiroaki Katagiri ,  Noriaki Tani ,  Kazuya Saito

发明人： Takashi KOMATSU ,  Kyuzo Nakamura ,  Hiroaki Katagiri ,  Noriaki Tani ,  Kazuya Saito

IPC分类号： H01J1/62

CPC分类号： C09K11/565 ,  H01L27/3267 ,  H05B33/14

摘要： A display device which can be driven by a thin-film transistor and has a high brightness is provided. A low-voltage-driven inorganic luminescent layer and a control transistor are formed on a substrate. The voltage which is applied to the inorganic luminescent layer is controlled by the control transistor. The inorganic luminescent layer has such strength against heat and any damage such that the inorganic luminescent layer can be formed by sputtering method. A top-emission type display device and a bottom-emission type display device can be formed on the same substrate and the luminescent light can be emitted from the same position.

摘要翻译： 提供了可以由薄膜晶体管驱动并且具有高亮度的显示装置。 在基板上形成低压驱动的无机发光层和控制晶体管。 施加到无机发光层的电压由控制晶体管控制。 无机发光层具有抗热的能力和任何可通过溅射法形成无机发光层的损伤。 顶部发光型显示装置和底部发光型显示装置可以形成在同一基板上，并且可以从同一位置发射发光。

公开(公告)号：US07999464B2

公开(公告)日：2011-08-16

申请号：US12245113

申请日：2008-10-03

申请人： Takashi Komatsu ,  Kyuzo Nakamura ,  Hiroaki Katagiri ,  Noriaki Tani ,  Kazuya Saito

发明人： Takashi Komatsu ,  Kyuzo Nakamura ,  Hiroaki Katagiri ,  Noriaki Tani ,  Kazuya Saito

IPC分类号： H05B33/02

CPC分类号： C09K11/565 ,  H01L27/3267 ,  H05B33/14

摘要： A display device which can be driven by a thin-film transistor and has a high brightness is provided. A low-voltage-driven inorganic luminescent layer and a control transistor are formed on a substrate. The voltage which is applied to the inorganic luminescent layer is controlled by the control transistor. The inorganic luminescent layer has such strength against heat and any damage such that the inorganic luminescent layer can be formed by sputtering method. A top-emission type display device and a bottom-emission type display device can be formed on the same substrate and the luminescent light can be emitted from the same position.

摘要翻译： 提供了可以由薄膜晶体管驱动并且具有高亮度的显示装置。 在基板上形成低压驱动的无机发光层和控制晶体管。 施加到无机发光层的电压由控制晶体管控制。 无机发光层具有抗热的能力和任何可通过溅射法形成无机发光层的损伤。 顶部发光型显示装置和底部发光型显示装置可以形成在同一基板上，并且可以从同一位置发射发光。

公开(公告)号：US20110155232A1

公开(公告)日：2011-06-30

申请号：US13061020

申请日：2009-08-28

申请人： Hirota Uchida ,  Tetsushi Fujinaga ,  Yoshinobu Ue ,  Kazuya Saito ,  Kyuzo Nakamura

发明人： Hirota Uchida ,  Tetsushi Fujinaga ,  Yoshinobu Ue ,  Kazuya Saito ,  Kyuzo Nakamura

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/077 ,  C23C16/24 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L31/076 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device manufacturing method, includes: continuously forming a first p-type semiconductor layer, a first i-type semiconductor layer, and a first n-type semiconductor layer, which constitute a first-photoelectric conversion unit, and a second p-type semiconductor layer which constitutes a second-photoelectric conversion unit composed of a crystalline-silicon-based thin film, in a reduced-pressure atmosphere; exposing the second p-type semiconductor layer to an air atmosphere; and forming a second i-type semiconductor layer and a second n-type semiconductor layer, which constitute the second-photoelectric conversion unit, on the second p-type semiconductor layer which was exposed to an air atmosphere.

摘要翻译： 一种光电转换装置的制造方法，包括：连续地形成构成第一光电转换单元的第一p型半导体层，第一i型半导体层和第一n型半导体层， 型半导体层，其在减压气氛中构成由结晶硅系薄膜构成的第二光电转换单元; 将第二p型半导体层暴露于空气气氛中; 以及在暴露于空气气氛的第二p型半导体层上形成构成第二光电转换单元的第二i型半导体层和第二n型半导体层。

公开(公告)号：US20080050523A1

公开(公告)日：2008-02-28

申请号：US10593444

申请日：2005-03-25

申请人： Makiko Kitazoe ,  Hiromi Itho ,  Shin Asari ,  Kazuya Saito

发明人： Makiko Kitazoe ,  Hiromi Itho ,  Shin Asari ,  Kazuya Saito

IPC分类号： C23C16/00 ,  C23C14/00

CPC分类号： H01L21/02277 ,  C23C16/345 ,  C23C16/44 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/3185

摘要： To provide a unit-layer post-treatment catalyst vapor-deposition apparatus and unit-layer post-treatment film forming method capable of improving in-face uniformity, step coverage, and film quality of a silicon nitride film or the like and forming a thin film by performing surface treatment after forming a film for each unit layer.A thin film post-treated for each unit layer is laminated by using a film forming step of introducing mixed gas of silane gas and ammonia gas into a reactive vessel 2 as a source gas like a rectangular pulse and contacting with and thermal-decomposing the source gas by a catalyst body 8, and forming a silicon nitride film on a substrate 5, one surface treating step of bringing ammonia gas into contact with the catalyst body 8 and then bleaching the ammonia gas on the surface of a silicon nitride film on the substrate 5 and other surface treating step of bleaching hydrogen gas on the surface of the silicon nitride film on the substrate 5 after bringing hydrogen gas into contact with the catalyst body 8 as one cycle and repeating the step of one cycle.

摘要翻译： 为了提供能够提高氮化硅膜等的面内均匀性，台阶覆盖率和膜质量的单层后处理催化剂蒸镀装置和单位层后处理膜形成方法， 通过在为每个单位层形成膜之后进行表面处理而进行。 通过使用将硅烷气体和氨气的混合气体引入作为长方体脉冲的源气体的反应性容器2中的膜形成工序来层压对每个单位层进行后处理的薄膜，并与源极接触并热分解 气体，并且在基板5上形成氮化硅膜，将氨气与催化剂体8接触的一个表面处理步骤，然后漂白基板上的氮化硅膜表面上的氨气 以及在使氢气与催化剂体8接触一个循环之后，在基板5上的氮化硅膜的表面上漂白氢气的表面处理步骤，并重复一个循环。

公开(公告)号：US20070209677A1

公开(公告)日：2007-09-13

申请号：US10591905

申请日：2005-03-10

申请人： Makiko Kitazoe ,  Shuji Osono ,  Hiromi Itoh ,  Kazuya Saito ,  Shin Asari

发明人： Makiko Kitazoe ,  Shuji Osono ,  Hiromi Itoh ,  Kazuya Saito ,  Shin Asari

IPC分类号： C23C16/00 ,  B08B5/00 ,  B08B3/12

CPC分类号： C23C16/4405

摘要： Provided is a self-cleaning catalytic chemical vapor deposition apparatus which suppresses the corrosion-induced degradation of a catalytic body by a cleaning gas without heating a catalytic body to not less than 2000° C. and permits practical cleaning rates and good cleaning at low cost. With conductors 5a, 5b which supply a constant current to a catalytic body 4 within a reaction chamber 2 from a heating power supply 6 and terminals 6a, 6b of the heating power supply 6 kept electrically insulated from the reaction chamber 2, a cleaning gas containing halogen elements is introduced into the reaction chamber 2 which has been evacuated, and the catalytic body 4 is heated by the energization from the heating power supply 6. An active species generated by this heating is caused to react with an adhering film which adheres to the interior of the reaction chamber 2, whereby the adhering film is removed. During this removal of the adhering film, a DC bias voltage having an appropriate polarity and an appropriate value is applied from a constant-voltage power supply 8 to the conductor 5b of the heating power supply 6.

摘要翻译： 提供了一种自清洁催化化学气相沉积装置，其通过清洁气体抑制催化剂体的腐蚀引起的降解，而不将催化剂体加热至不低于2000℃，并且以低成本实现了实际的清洗率和良好的清洁 。 利用从加热电源6向加热电源6的反应室2内的催化体4供给恒定电流的导体5a，5b与加热电源6的端子6a，6b保持与反应室2电绝缘， 将含有卤素元素的清洁气体引入已经被抽真空的反应室2中，并且通过来自加热电源6的激励来加热催化剂体4.通过该加热产生的活性物质与粘合膜反应 其粘附到反应室2的内部，由此去除粘附膜。 在去除粘合膜期间，从恒压电源8向加热电源6的导体5b施加具有适当极性和适当值的DC偏置电压。

公开(公告)号：US20120145184A1

公开(公告)日：2012-06-14

申请号：US13398594

申请日：2012-02-16

申请人： Makiko KITAZOE ,  Shuji Osono ,  Hiromi Itoh ,  Kazuya Saito ,  Shin Asari

发明人： Makiko KITAZOE ,  Shuji Osono ,  Hiromi Itoh ,  Kazuya Saito ,  Shin Asari

IPC分类号： B08B3/10 ,  B08B7/04 ,  B08B5/00

CPC分类号： C23C16/4405

摘要： A self-cleaning catalytic chemical vapor deposition apparatus which suppresses the corrosion-induced degradation of a catalytic body by a cleaning gas without heating a catalytic body to not less than 2000° C. and permits practical cleaning rates and good cleaning at low cost. Conductors supply a constant current to a catalytic body within a reaction chamber from a heating power supply. Terminals of the heating power supply are electrically insulated from the reaction chamber. A cleaning gas containing halogen elements is introduced into the evacuated reaction chamber. The catalytic body is heated by the heating power supply. An active species generated by this heating reacts with an adhering film adhered to the interior of the reaction chamber, which is removed. During this removal, a DC bias voltage with appropriate polarity and appropriate value is applied from a constant-voltage power supply to the conductor of the heating power supply.

摘要翻译： 一种自清洁催化化学气相沉积装置，其通过清洁气体抑制催化体的腐蚀引起的降解，而不将催化剂体加热至不低于2000℃，并且以低成本实现了实际的清洗率和良好的清洁。 导体从加热电源向反应室内的催化体提供恒定电流。 加热电源的端子与反应室电绝缘。 将含有卤元素的清洁气体引入抽空的反应室中。 催化剂体被加热电源加热。 通过该加热产生的活性物质与粘附到反应室内部的粘附膜反应，其被除去。 在该移除期间，从恒定电压电源向加热电源的导体施加具有适当极性和适当值的DC偏置电压。