公开(公告)号：US20240063608A1

公开(公告)日：2024-02-22

申请号：US18232922

申请日：2023-08-11

Applicant: Korea Photonics Technology Institute

Inventor： Keon Hwa LEE ,  Young Hee CHOI

IPC: H01S5/183 ,  H01S5/32

CPC classification number: H01S5/18377 ,  H01S5/3216 ,  H01S5/18347 ,  H01S2301/176

Abstract: Disclosed are a micro VCSEL with improved beam quality and a micro VCSEL array. An embodiment of the present invention provides a micro VCSEL with improved beam quality of light or laser to be oscillated and a micro VCSEL array capable of improving manufacturing efficiency and minimizing efficiency degradation due to errors occurring during a transfer.

公开(公告)号：US20240055833A1

公开(公告)日：2024-02-15

申请号：US18268873

申请日：2022-01-06

Applicant: SONY GROUP CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Takahiro ARAKIDA ,  Shinichi AGATUMA ,  Rintaro KODA ,  Yasutaka HIGA ,  Osamu MAEDA ,  Kota TOKUDA

IPC: H01S5/183 ,  H01S5/323

CPC classification number: H01S5/18311 ,  H01S5/18361 ,  H01S5/32308

Abstract: The present technology provides a surface emitting laser capable of suppressing a decrease in luminous efficiency.
The present technology provides a surface emitting laser including: first and second multilayer film reflectors; a plurality of active layers laminated together between the first and second multilayer film reflectors; a tunnel junction disposed between two active layers adjacent to each other in a lamination direction among the plurality of active layers; and an oxide confinement layer disposed between one active layer of the two adjacent active layers and the tunnel junction. According to the present technology, it is possible to provide a surface emitting laser capable of suppressing a decrease in luminous efficiency.

公开(公告)号：US11901702B2

公开(公告)日：2024-02-13

申请号：US16945101

申请日：2020-07-31

Applicant: Lumileds LLC

Inventor： Ken Shimizu ,  Hisashi Masui ,  Ted Wangensteen

IPC: H01S5/22 ,  H01S5/183

CPC classification number: H01S5/222 ,  H01S5/18341 ,  H01S5/18361 ,  G02F2201/346

Abstract: A distributed Bragg reflector (DBR) structure on a substrate includes a high refractive index layer comprising titanium oxide (TiO2) and a low refractive index layer having a high carbon region and at least one low carbon region that contacts the high refractive index layer. Multiple layers of the high refractive index layer and the low refractive index layer are stacked. Typically, the multiple layers of the high refractive index layer and the low refractive index layer are stacked to a thickness of less than 10 microns. Each of the respective layers of the high refractive index layer and the low refractive index layer have a thickness of less than 0.2 microns.

公开(公告)号：US11901701B2

公开(公告)日：2024-02-13

申请号：US17088599

申请日：2020-11-04

Applicant: Katsunari Hanaoka ,  Masayuki Fujiwara

Inventor： Katsunari Hanaoka ,  Masayuki Fujiwara

IPC: H01S5/183 ,  H01S5/02 ,  H01S5/026 ,  H01S5/023 ,  H01S5/0233 ,  H01S5/0235 ,  H01S5/42

CPC classification number: H01S5/18369 ,  H01S5/023 ,  H01S5/0206 ,  H01S5/0233 ,  H01S5/0235 ,  H01S5/0261 ,  H01S5/0262 ,  H01S5/18305 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/18377 ,  H01S5/423

Abstract: A surface emitting laser element includes a first reflecting mirror; an active layer over the first reflecting mirror; a second reflecting mirror over the active layer; and a multilayer film over the second reflecting mirror. The multilayer film has a side surface including one film and inclined with respect to a principal surface of the second reflecting mirror. The multilayer film includes, in a thickness direction, two or more pairs of a first film having a first refractive index and a second film having a second refractive index higher than the first refractive index. The multilayer film has a center portion and a peripheral portion around the center portion in plan view in a direction perpendicular to the principal surface. The peripheral portion includes the side surface.

公开(公告)号：US20240039247A1

公开(公告)日：2024-02-01

申请号：US17875895

申请日：2022-07-28

Applicant: ams International AG

Inventor： Laurent NEVOU ,  Jean Francois SEURIN ,  Svenja MAUTHE ,  Jens GEIGER

IPC: H01S5/34 ,  H01S5/183 ,  H01S5/30 ,  H01S5/026 ,  G01S7/481

CPC classification number: H01S5/3416 ,  H01S5/18311 ,  H01S5/3054 ,  H01S5/18361 ,  H01S5/0262 ,  G01S7/4812 ,  G01S7/4814

Abstract: An optoelectronic semiconductor device (1) comprising a semiconductor body (10) having a first region (101), a second region (102) and an active region (103) configured to emit or detect electromagnetic radiation in an emission direction (S) is described herein. The optoelectronic semiconductor device (1) further comprises a first reflector (21) arranged on a first side of the semiconductor body (10) and a second reflector (22) arranged on a second side of the semiconductor body (10), opposite the first side, a first electrode (31) and a second electrode (32), an aperture region (104) and an optical element (40) arranged downstream of the active region (103) in the emission direction (S). The emission direction (S) is oriented parallel to a stacking direction of the semiconductor body (10). The first electrode (31) is arranged on the first region (101) and the second electrode (32) is arranged between the second reflector (22) and the active region (103). Further, a method for operating an optoelectronic semiconductor device (1) is provided.

公开(公告)号：US20240039245A1

公开(公告)日：2024-02-01

申请号：US18257033

申请日：2021-12-02

Applicant: ams-OSRAM International GmbH

Inventor： Fabian KNORR

IPC: H01S5/183 ,  H01L27/15 ,  H01S5/42

CPC classification number: H01S5/18386 ,  H01L27/153 ,  H01S5/423

Abstract: The invention relates to an optoelectronic device having at least two emission regions and having a radiation exit face, the emission regions each having an active region provided to generate radiation, the active regions of the emission regions being arranged in a common emitter plane. The emission regions are each assigned a portion of the radiation exit face through which portion the radiation emitted by the respective emission region exits, wherein the radiation exit face is formed at least in part by a radiation-permeable body which is arranged on at least one of the emission regions, and wherein the portions of the radiation exit face are arranged at differing distances from the common emitter plane.

公开(公告)号：US11881683B2

公开(公告)日：2024-01-23

申请号：US17090846

申请日：2020-11-05

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Constance J. Chang-Hasnain ,  Jiaxing Wang ,  Jonas H. Kapraun ,  Emil Kolev

IPC: H01S5/183 ,  H01S5/30 ,  H01L21/02

CPC classification number: H01S5/18361 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01S5/3013 ,  H01S5/18311 ,  H01S2304/02 ,  H01S2304/04

Abstract: A semiconductor device fabrication method in which a growing process is followed by a capping process in which a phosphor containing material cap layer is deposited over a final GaAs based layer. The wafer, containing many such substrates, can be removed from the reaction chamber to continue processing at a later time without creating an oxide layer on the final GaAs based layer. In continuing processing, a decomposition process selectively decomposes the phosphor containing material cap layer, after which a regrowing process is performed to grow additional layers of the device structure. The capping, decomposition and regrowth processes can be repeated multiple times on the semiconductor devices on the wafer during device fabrication.

公开(公告)号：US20240022045A1

公开(公告)日：2024-01-18

申请号：US17812796

申请日：2022-07-15

Applicant: Mellanox Technologies, Ltd.

Inventor： Petter Westbergh ,  Attila Fulop

IPC: H01S5/183 ,  H01S5/125

CPC classification number: H01S5/18377 ,  H01S5/125

Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided that includes a first reflector; a second reflector; and an active region disposed between the first reflector and the second reflector. The first reflector defines a first reflector characteristic dimension in a plane that is substantially perpendicular to an emission axis of the VCSEL, and the second reflector defines a second reflector characteristic dimension in a plane that is substantially perpendicular to the emission axis. The first reflector characteristic dimension is substantially equal to the second reflector characteristic dimension, which enables the VCSEL to exhibit improved heat dissipation compared to conventional VCSELs.

公开(公告)号：US11876350B2

公开(公告)日：2024-01-16

申请号：US17097330

申请日：2020-11-13

Applicant: II-VI Delaware, Inc.

Inventor： Antoine Philippe Pissis ,  Evgeny Zibik

IPC: H01S5/42 ,  H01S5/02 ,  H01S5/183 ,  H01S5/40

CPC classification number: H01S5/423 ,  H01S5/0206 ,  H01S5/18311 ,  H01S5/18394 ,  H01S5/4087 ,  H01S2304/02 ,  H01S2304/04

Abstract: A vertical cavity surface emitting laser (VCSEL) array is fabricated to produce multiple wavelengths. A first distributed Bragg reflector (DBR) is formed on a substrate, and an optical layer having an active region is formed on the first DBR. The optical layer has a variation in optical characteristic configured to generate multiple wavelengths. To do this, a first portion of the layer is formed on the first DBR. Different dimensioned features (profiles, wells, trenches, gratings, etc.) are then formed on a surface of the first portion. Subsequently, a second portion of the layer is formed by filling in the dimensioned features on the first portion's surface. Finally, a second DBR is formed on the second portion of the layer. The variation in optical characteristic can include variation in refractive index, physical thickness, or both. The assembly can be processed as usual to produce a VCSEL array having multiple emitters.

公开(公告)号：US20240006850A1

公开(公告)日：2024-01-04

申请号：US18250416

申请日：2021-09-28

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： HIROHISA YASUKAWA

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/42 ,  H01S5/026

CPC classification number: H01S5/183 ,  H01S5/04257 ,  H01S5/423 ,  H01S5/026

Abstract: Provided is a semiconductor laser driving apparatus of a division emission scheme which reduces a delay of a light emission pulse due to an influence of a wiring length of a light-emitting element of a VCSEL located far from an LDD, and a vehicle control system including the semiconductor laser driving apparatus. The configuration includes a vertical cavity surface semiconductor laser (10) having a plurality of light-emitting elements (13), and at least two or more laser diode drivers (20) disposed around the vertical cavity surface semiconductor laser (10) and having a plurality of driving elements that is connected to the light-emitting elements (13) from a peripheral surface of the vertical cavity surface semiconductor laser (10) and causes the light-emitting elements (13) to emit light.