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公开(公告)号：US20190296227A1
公开(公告)日：2019-09-26
申请号：US16364128
申请日：2019-03-25
申请人： ABLIC Inc.
发明人： Takaaki HIOKA , Tomoki HIKICHI
摘要： The semiconductor device includes a vertical Hall element that is provided in a first region of a semiconductor substrate and has a plurality of first electrodes, and a resistive element that is provided in a second region different from the first region in the semiconductor substrate and has a plurality of second electrodes. The plurality of first electrodes and the plurality of second electrodes are connected so that resistances of current paths are substantially the same in any phase in which the vertical Hall element is driven using a spinning current method.
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公开(公告)号：US20190280191A1
公开(公告)日：2019-09-12
申请号：US16346652
申请日：2017-10-27
申请人： Johan Åkerman AB
摘要： A spin oscillator device (1) comprising a first spin Hall effect nano-oscillator, SHNO (2), having an extended multi-layered magnetic thin-film stack (2), wherein a nano-constriction, NC, (6) is provided in said magnetic film stack (2) providing an SHNO(2, 6) comprising a magnetic free-layer (3) and a spin Hall effect layer, and having a nanoscopic region, wherein the NC (6) is configured to focus electric current (Idc) to the nanoscopic region, configured to generate the necessary current densities needed to excite magnetization auto-oscillations, MAO, in the magnetic free layer (3), wherein a circumferential magnetic field (HOe) surrounds the NC (6), wherein an externally applied field (Hext) with a substantial out-of-plane component is configured to control the spatial extension of the MAO towards a second spin oscillator device (NCn), which is arranged in MAO communication and synchronized to the first NC (NC1).
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公开(公告)号：US20190279699A1
公开(公告)日：2019-09-12
申请号：US16106694
申请日：2018-08-21
发明人： Yuichi Ohsawa , Mariko Shimizu , Satoshi Shirotori , Hideyuki Sugiyama , Altansargai Buyandalai , Hiroaki Yoda , Katsuhiko Koui , Tomoaki Inokuchi , Naoharu Shimomura
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes a first region, a second region, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third region includes first and second end portions. The first end portion includes a first protrusion. The second end portion includes a second protrusion. A first position along the second direction of the first protrusion is different from a second position along the second direction of the second protrusion.
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公开(公告)号：US20190277889A1
公开(公告)日：2019-09-12
申请号：US16426215
申请日：2019-05-30
发明人： Shaun D. Milano , Shixi Louis Liu
IPC分类号： G01R15/20 , G01R33/00 , G01R33/09 , G01R33/07 , H01L43/02 , H01L21/48 , H01L43/04 , H01L23/495 , H01L23/00 , G01R19/00 , H01L43/08 , H01L43/06
摘要： A current sensor integrated circuit includes a lead frame having a primary conductor and at least one secondary lead, a semiconductor die disposed adjacent to the primary conductor, an insulation structure disposed between the primary conductor and the semiconductor die, and a non-conductive insulative material enclosing the semiconductor die, the insulation structure, a first portion of the primary conductor, and a first portion of the at least one secondary lead to form a package. The first portion of the at least one secondary lead (between a first end proximal to the primary conductor and a second end proximal to the second, exposed portion of the at least one secondary lead) has a thickness that is less than a thickness of the second, exposed portion of the least one secondary lead. A distance between the second, exposed portion of the primary conductor and the second, exposed portion of the at least one secondary lead is at least 7.2 mm.
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公开(公告)号：US10360963B2
公开(公告)日：2019-07-23
申请号：US15723278
申请日：2017-10-03
IPC分类号： G11C11/00 , G11C11/16 , H01L27/22 , H01L43/08 , H03K19/18 , G11C11/18 , G11C11/56 , H01L43/06 , H03K19/20
摘要： The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.
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公开(公告)号：US10333057B2
公开(公告)日：2019-06-25
申请号：US15928390
申请日：2018-03-22
发明人： Tomoya Shoji , Tsuyoshi Akagi
摘要： A hall element is provided to suppress fluctuation in a Hall output voltage of the hall element which is generated due to a fluctuation in stress. The hall element may be formed to include a substrate, a magnetosensitive portion formed on the substrate, an insulating film formed on the magnetosensitive portion, four conductive portions (electrode portions and contact portions) which are formed on the insulating film, electrically connected to the magnetosensitive portion through the insulating film, and disposed at positions serving as vertexes of a quadrangle, and ball portions electrically connected to the conductive portions, and at least one ball portion is disposed on a diagonal line of the quadrangle formed by a region surrounded by the four conductive portions and above a portion where the conductive portion and the insulating film are in contact with each other.
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公开(公告)号：US20190189175A1
公开(公告)日：2019-06-20
申请号：US16285948
申请日：2019-02-26
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1697 , G11C11/18 , G11C11/5607 , H01L27/228 , H01L43/06 , H01L43/08 , H03K19/18 , H03K19/20
摘要： The present invention relates to a semiconductor device. The semiconductor device based on the spin orbit torque (SOT) effect, according to an example of the present invention, comprises the first electrode; and the first cell and the second cell connected to the first electrode, wherein the first and the second cells are arranged on the first electrode separately; the magnetic tunnel junction (MTJ) having a free magnetic layer and a pinned magnetic layer with a dielectric layer in between them; the magnetization direction of the free magnetic layer is changed when the current applied on the first electrode exceeds critical current value of each cell; and the critical current value of the first cell is different from that of the second cell.
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公开(公告)号：US20190173428A1
公开(公告)日：2019-06-06
申请号：US16097796
申请日：2017-05-05
申请人： Richard Arthur KIEHL , Nicholas RIZZO , ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY
CPC分类号： H03B15/006 , H01F10/329 , H01F41/302 , H01L43/06 , H01L43/10 , H01L43/14 , H03B15/00
摘要： An array of magnetic nanoparticle (MNP) spin torque oscillators (STOs) is described. Each STO is comprised of a uniform, chemically synthesized, spherical nanoparticle which couples to current flowing along a surface. The particles are organized into an array by a self-assembly technique with uniform spacing and close proximity to allow strong electrical and magnetic coupling between particles. The coupling of the nanoparticles to the surface current drives the oscillations by spin-torque, and for phase locking and data input. The uniform, spherical shape of the particles allows the oscillations to be achieved at low currents and with low power dissipation. The MNP-STOs may be used as a basis for massively parallel computing, microwave oscillators, or other applications.
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公开(公告)号：US10290337B2
公开(公告)日：2019-05-14
申请号：US15822500
申请日：2017-11-27
发明人： Goran Mihajlovic , Neil Smith
摘要： A method and apparatus for deterministically switching a free layer in a spin orbit torque magnetoresistive random access memory (SOT-MRAM) cell is disclosed herein. In one embodiment, an SOT-MRAM memory cell is provided. The SOT-MRAM memory cell includes a magnetic tunnel junction, a ferromagnetic bias layer, and an antiferromagnetic layer. The magnetic tunnel junction includes a free layer having primarily two bi-stable magnetization directions, a reference layer having a fixed magnetization direction, and an insulating tunnel barrier layer positioned between the free layer and the reference layer. The ferromagnetic bias layer is configured to provide spin orbit torque via anomalous Hall effect and simultaneously configured to provide a magnetic bias field on the free layer to achieve deterministic switching. The antiferromagnetic layer is positioned below the ferromagnetic bias layer and is configured to pin a magnetization direction of the ferromagnetic bias layer in a predetermined direction.
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公开(公告)号：US10249514B2
公开(公告)日：2019-04-02
申请号：US15225442
申请日：2016-08-01
申请人： ROHM CO., LTD.
发明人： Yasuhiro Fuwa
IPC分类号： H01L23/13 , H01L23/29 , H01L21/48 , H01L21/54 , H01L21/56 , H01L23/373 , H01L23/495 , H01L23/498 , H01L23/31 , H01L43/06 , H01L43/10
摘要： A semiconductor device includes a semiconductor element, a substrate formed with a recess in a main surface, a conductive layer formed on the substrate and electrically connected to the semiconductor element, and a sealing resin covering the semiconductor element. The substrate is made of an electrically insulative synthetic resin. The recess has a bottom surface on which the semiconductor element is mounted, and an intermediate surface connected to the main surface and the bottom surface. The bottom surface is orthogonal to the thickness direction of the substrate. The intermediate surface is inclined with respect to the bottom surface.
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