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公开(公告)号：US10333583B2
公开(公告)日：2019-06-25
申请号：US15881692
申请日：2018-01-26
发明人： Takamitsu Hafuka
IPC分类号： H04L25/06 , H04B1/7073 , H04B1/709
摘要： A signal detection circuit includes: a correlation circuit including the first through nth correlators connected sequentially as the first through nth stage correlators and each computing a correlation value between a received signal and a spreading sequence while shifting the received signal to the next stage depending on the chip rate period of the spreading sequence; a first adder that adds k correlation values computed by k correlators so as to generate a first addition value; a second adder that adds r correlation values computed by r correlators so as to generate a second addition value; a subtractor that subtracts the first addition value from the second addition value so as to generate a subtraction value; and a synchronization detection unit that compares the subtraction value with a threshold value, so as to detect the synchronization timing of the spreading sequence and the received signal.
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公开(公告)号：US20190190449A1
公开(公告)日：2019-06-20
申请号：US16277601
申请日：2019-02-15
发明人： Kengo TAKEMASA , Yuichi YOSHIDA , Toshihisa SONE , Kazuya YAMADA , Akihiro TAKEI
CPC分类号： H03B5/30 , H01L21/565 , H01L23/3107 , H01L23/34 , H01L23/49541 , H01L23/49575 , H01L23/49596 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49171 , H01L2924/00014 , H01L2924/1461 , H01L2924/181 , H01L2924/3025 , H03L1/022 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes an electronic component that includes an oscillator and has terminals on one face. A semiconductor chip is electrically connected to the electronic component and also includes terminals on one face thereof. The electronic component and the semiconductor chip are mounted to a mounting base such that the terminals of the electronic component and the terminals of the semiconductor chip face in the same direction. First bonding wires are connected to the terminals of the semiconductor chip, and second bonding wires having an apex height smaller than that of the first bonding wires connect the terminals of the electronic component to the terminals of the semiconductor chip. A sealing member completely seals within at least the electronic component.
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公开(公告)号：US20190189800A1
公开(公告)日：2019-06-20
申请号：US16226472
申请日：2018-12-19
发明人： Toshiyuki Orita , Tomomi Yamanobe , Makoto Higashihira , Yuuki Doi , Toshifumi Kobe , Masao Tsujimoto , Takao Kaji , Kiyofumi Kondou
IPC分类号： H01L29/78 , H01L29/06 , H01L29/66 , H01L29/10 , H01L29/08 , H01L29/423 , H01L29/417
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0878 , H01L29/1033 , H01L29/41766 , H01L29/4238 , H01L29/66734 , H01L29/7827
摘要： The disclosure reduces the risk of collapse of the wall surrounding the trench and suppresses the withstand voltage fluctuation that accompanies the manufacturing variation for a semiconductor device having a super junction structure. The semiconductor device includes a drift layer of a first conductivity type and a plurality of embedded parts embedded in the drift layer. The embedded parts are of a second conductivity type different from the first conductivity type, and the embedded parts are arranged with a first direction as a longitudinal direction and spaced from each other along a second direction that intersects the first direction. A width of each of the embedded parts in the second direction changes continuously along the first direction.
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公开(公告)号：US20190180808A1
公开(公告)日：2019-06-13
申请号：US16266642
申请日：2019-02-04
发明人： Takashi YAMADA
IPC分类号： G11C11/22
CPC分类号： G11C11/2273 , G11C11/221
摘要： A non-volatile semiconductor storage device including a first potential retention line configured to retain a potential corresponding to data read from the memory cell, a second potential retention line configured to retain a reference potential read from the memory cell in which the reference potential is written after the data is read out, a sense amplifier configured to amplify a difference between the potential retained by the first potential retention line and the reference potential for reading out the data from the memory cell, a first offset adjustment circuit connected to the first potential retention line, for adjusting an offset for the potential, a second offset adjustment circuit connected to the second potential retention line, and an offset command signal supply circuit configured to supply a first offset command signal to the first offset adjustment circuit so as to control the offset.
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公开(公告)号：US10312284B2
公开(公告)日：2019-06-04
申请号：US15961919
申请日：2018-04-25
发明人： Hiroki Kasai
IPC分类号： H01L31/119 , H01L27/146 , G01T1/24 , H01L31/02 , H01L31/0224 , H01L31/08
摘要： A semiconductor device including a first semiconductor layer including a first region and a second region adjacent to the first region; a first insulator layer provided above the first semiconductor layer; an intermediate semiconductor layer, having an n-type conduction, provided above the first region of the first semiconductor layer and above the first insulator layer; a second insulator layer provided above the intermediate semiconductor layer; a second semiconductor layer provided above the first region of the first semiconductor layer and above the second insulator layer; a sensor formed in the second region of the first semiconductor layer; a contact electrode connected to the intermediate semiconductor layer; and a circuit element formed in the second semiconductor layer.
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公开(公告)号：US20190148249A1
公开(公告)日：2019-05-16
申请号：US16243173
申请日：2019-01-09
发明人： Hideki MASAI
IPC分类号： H01L21/66 , H01L23/522 , H01L23/525 , G01R31/26
CPC分类号： H01L22/32 , G01R31/2644 , G01R31/2856 , G01R31/2884 , H01L22/14 , H01L23/5228 , H01L23/525 , H01L24/48 , H01L2224/48132 , H01L2924/181 , H01L2924/00012
摘要： A semiconductor device includes a signal processing circuit configured to generate an output signal, an output pad, an output line connecting the signal processing circuit to the output pad, the output signal from the signal processing circuit being output from the output pad through the output line, a shorting pad formed in the output line, a switch connected between the shorting pad and the output pad, and configured to connect the signal processing circuit to the output pad when the switch is on, and disconnect the signal processing circuit from the output pad when the switch is off, and a wiring line connecting the shorting pad to the output pad.
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公开(公告)号：US20190115080A1
公开(公告)日：2019-04-18
申请号：US16158250
申请日：2018-10-11
发明人： Tomomi WATANABE
摘要： In the present invention, a vacant block which is unwritten is identified as a temporary storage block when a writing destination block has already data written. Then, data writing step writing an incoming data to be written into the temporarily storage block, managing step including assigning a pair of the writing destination block and the temporarily storage block an index number which corresponds to the pair, and generating a management table which indicates the index number associating with a physical address indicating a physical position of the temporarily storage block in the nonvolatile memory are performed. In the data writing step, the physical address which corresponds to the index number assigned to the writing destination block is obtained from the management table. The incoming data to be written is written into the temporary storage block indicated by the physical address.
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公开(公告)号：US10262929B2
公开(公告)日：2019-04-16
申请号：US15365525
申请日：2016-11-30
发明人： Yuuki Kodama
IPC分类号： H01L23/495 , H01L21/56 , H01L23/31 , H01L23/00 , H01L21/48
摘要： A semiconductor device and a semiconductor device manufacturing method that may prevent positional displacement of an electronic component mounted on a lead frame. The semiconductor device includes a lead frame, and an electronic component that has a protruding or recessed structure at a bonding face that bonds to the lead frame and is bonded to the lead frame, in a state in which a portion of the lead frame is fitted together with the protruding or recessed structure.
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公开(公告)号：US10256184B2
公开(公告)日：2019-04-09
申请号：US14484414
申请日：2014-09-12
发明人： Kazuhide Abe
IPC分类号： H01L23/522 , H01L21/288 , H01L21/311 , H01L21/321 , H01L21/3213 , H01L21/768 , H01L23/532
摘要： A semiconductor device has a semiconductor substrate, a first insulating film formed on a surface of the semiconductor substrate, a first recess formed in the first insulating film, a first barrier film formed on an inner surface of the first insulating film except a top peripheral region of the first trench, a first conductive film formed in the first trench, and a covering film formed on an upper surface and a top peripheral region of the first conductive film and an upper surface of the first barrier film. The first conductive film includes copper.
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公开(公告)号：US10249374B2
公开(公告)日：2019-04-02
申请号：US15623759
申请日：2017-06-15
发明人： Junya Ogawa
摘要： A voltage supply circuit includes a step-down circuit configured to receive a power supply voltage, step down the power supply voltage to generate a step-down voltage having a constant value lower than a value of the power supply voltage, and a booster circuit configured to boost the step-down voltage to generate an output voltage, the output voltage having a value greater than the value of the power supply voltage.
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