ANALOG-TO-DIGITAL CONVERTER FOR A CAPACITIVE ADIABATIC LOGIC CIRCUIT

    公开(公告)号:US20210091779A1

    公开(公告)日:2021-03-25

    申请号:US17019089

    申请日:2020-09-11

    IPC分类号: H03M1/18

    摘要: An analog-to-digital converter for an adiabatic logic circuit, including at least one variable-capacitance cell, the cell including first and second main terminals and at least one control terminal insulated from its first and second main terminals and capable of receiving a control voltage to vary the capacitance between its first and second main terminals between a low value and a high value, wherein: the cell has its first main terminal coupled to a node of application of a variable periodic converter power supply voltage; the cell has its second main terminal coupled to a node for supplying a binary output signal of the converter; and the cell receives on its first control terminal an analog input voltage of the converter.

    BATTERY WITH SWITCHED ACCUMULATORS
    83.
    发明申请

    公开(公告)号:US20200335982A1

    公开(公告)日:2020-10-22

    申请号:US16772103

    申请日:2018-12-06

    IPC分类号: H02J7/00

    摘要: A battery including: a power supply bus; an assembly of electric cells and of first switches coupling the cells; second switches forming an H bridge and coupling said assembly to nodes; a first circuit for supplying first control signals to the first and second switches; a second circuit for delivering a first power supply voltage to the first circuit based on the voltage across one of the cells; a third circuit for supplying second control signals to at least two of the second switches and connected to the power supply bus; and first diodes coupling the first circuit to the two second switches and second diodes coupling the third circuit to the two second switches.

    MAGNETIC MEMORY CELL
    87.
    发明申请

    公开(公告)号:US20180294023A1

    公开(公告)日:2018-10-11

    申请号:US15766236

    申请日:2016-10-05

    IPC分类号: G11C11/16 H01L43/10

    摘要: The invention relates to a magnetic memory cell (30), comprising: a stack (31) including a magnetic layer section (34) between a conductive layer section (32) and a section (36) of a layer that is different from the conductive layer, the magnetic layer having a magnetisation (35) perpendicular to the plane of the layers; a metallisation section (42) on which the stack is placed; and first, second, third and fourth metallisation arms (44D to 44G), each arm having a median axis (45D to 45G), wherein, for each arm, a current flowing towards the stack in the direction of the median axis sees that portion of the stack which is closest the arm mostly on its left for the first and second arms (44E, 44G), and mostly on its right for the third and fourth arms (44D, 44F).