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公开(公告)号:US20210194466A1
公开(公告)日:2021-06-24
申请号:US17121480
申请日:2020-12-14
IPC分类号: H03K3/012
摘要: A method of controlling a switch, including: a) applying a control signal to a control terminal of the switch, said control signal exhibiting at least one first switching between a switch turn-on control state and a switch turn-off control state; and b) applying a switch turn-off potential on said control terminal after a first delay starting at said first switching, the first delay being greater than the turn-off time.
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公开(公告)号:US20210091779A1
公开(公告)日:2021-03-25
申请号:US17019089
申请日:2020-09-11
发明人: Gaël Pillonnet , Hervé Fanet
IPC分类号: H03M1/18
摘要: An analog-to-digital converter for an adiabatic logic circuit, including at least one variable-capacitance cell, the cell including first and second main terminals and at least one control terminal insulated from its first and second main terminals and capable of receiving a control voltage to vary the capacitance between its first and second main terminals between a low value and a high value, wherein: the cell has its first main terminal coupled to a node of application of a variable periodic converter power supply voltage; the cell has its second main terminal coupled to a node for supplying a binary output signal of the converter; and the cell receives on its first control terminal an analog input voltage of the converter.
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公开(公告)号:US20200335982A1
公开(公告)日:2020-10-22
申请号:US16772103
申请日:2018-12-06
发明人: Yan Lopez , Eric Fernandez , Sylvain Bacquet , Léandro Cassarino , Ghislain Despesse , Rémy Thomas
IPC分类号: H02J7/00
摘要: A battery including: a power supply bus; an assembly of electric cells and of first switches coupling the cells; second switches forming an H bridge and coupling said assembly to nodes; a first circuit for supplying first control signals to the first and second switches; a second circuit for delivering a first power supply voltage to the first circuit based on the voltage across one of the cells; a third circuit for supplying second control signals to at least two of the second switches and connected to the power supply bus; and first diodes coupling the first circuit to the two second switches and second diodes coupling the third circuit to the two second switches.
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公开(公告)号:US10483716B2
公开(公告)日:2019-11-19
申请号:US15873465
申请日:2018-01-17
摘要: A photonic device comprising: a support; an intermediate layer comprising at least one dielectric material and a first and second excess thickness of silicon separated from each other by a space; a first patterned silicon layer at least partially forming a waveguide, and first to fifth waveguide sections; a first dielectric layer covering the first silicon layer and a gain structure comprising at least one gain medium in contact with the first dielectric layer; the second and fourth wave guide sections, the first and second excess thicknesses of silicon, and the first and second ends of the gain structure forming a first and second optical transition zone between a hybrid laser waveguide, formed by a central portion of the gain structure, the space and the third waveguide section and the first and fifth waveguide sections respectively. The invention also relates to a method of fabricating such a photonic device.
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公开(公告)号:US20190043755A1
公开(公告)日:2019-02-07
申请号:US16075530
申请日:2017-02-03
发明人: Nicolas Posseme , Yann Mazel
IPC分类号: H01L21/768 , H01L21/02 , H01L21/311
CPC分类号: H01L21/76814 , H01L21/02063 , H01L21/31116 , H01L21/31144 , H01L21/76829
摘要: The invention relates to aA process for producing conductive connections to an electronic chip, comprising the following steps: a) depositing an insulating layer on one face of a wafer; b) producing a layer based on at least one metal covering the insulating layer and equipped with first apertures; c) etching second apertures in the insulating layer in the extension of the first apertures by plasma etching in a plasma based on at least one halogen-containing compound; d) vacuum annealing the entire structure obtained after step c); and e) forming, after step d), the conductive connections in the second apertures.
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86.
公开(公告)号:US20180314375A1
公开(公告)日:2018-11-01
申请号:US15770879
申请日:2016-10-31
发明人: Charles Hudin , Steven Strachan
CPC分类号: G06F3/0414 , G01B7/004 , G01L5/22 , G06F3/0416
摘要: A system for detecting an application of pressure on a surface of an object, comprising a support of the object equipped with at least one sensor of force and of torque, and a processing unit configured to calculate, on the basis of the measurements of the at least one force and torque sensor, the coordinates of a straight line in space passing through a point of application of pressure on the surface of the object. The processing unit determines, by use of a ray-tracing calculation, whether an elementary facet of a geometric model of the surface of the object representing the surface according to a mesh of elementary facets intercepts the straight line passing through the point of application of pressure.
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公开(公告)号:US20180294023A1
公开(公告)日:2018-10-11
申请号:US15766236
申请日:2016-10-05
申请人: Centre national de la recherche scientifique , Commissariat à I'énergie atomique et aux énergies alternatives
摘要: The invention relates to a magnetic memory cell (30), comprising: a stack (31) including a magnetic layer section (34) between a conductive layer section (32) and a section (36) of a layer that is different from the conductive layer, the magnetic layer having a magnetisation (35) perpendicular to the plane of the layers; a metallisation section (42) on which the stack is placed; and first, second, third and fourth metallisation arms (44D to 44G), each arm having a median axis (45D to 45G), wherein, for each arm, a current flowing towards the stack in the direction of the median axis sees that portion of the stack which is closest the arm mostly on its left for the first and second arms (44E, 44G), and mostly on its right for the third and fourth arms (44D, 44F).
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公开(公告)号:US20170370578A1
公开(公告)日:2017-12-28
申请号:US15680094
申请日:2017-08-17
发明人: Florent Lemont , Karine Poizot
CPC分类号: F23G5/085 , F23G5/02 , F23G5/14 , F23G2204/201 , F23G2209/142 , F23G2209/18 , F23L7/007 , H05H1/30 , Y02E20/344
摘要: A device for chemical destruction of at least one feed comprising at least one organic compound are provided. In one aspect, the device comprises at least one inductive plasma torch, means for introducing at least one plasma-forming gas into the torch, optionally when the plasma gas(es) comprise(s) no or little oxygen, means for bringing oxygen gas into the plasma or into the vicinity of the plasma, means for introducing the feed into the torch, a reaction enclosure capable of allowing thermal destruction of the gases flowing from the torch, a device allowing mixing of the gases flowing out of the reaction enclosure to be carried out, means for introducing air and/or oxygen gas into the mixing device, a device allowing recombination by cooling of at least one portion of the gases from the mixing device, the torch, the reaction enclosure, the mixing device and the recombination device being in fluidic communication.
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89.
公开(公告)号:US20170317125A1
公开(公告)日:2017-11-02
申请号:US15528055
申请日:2015-11-09
发明人: Thomas BORDY
IPC分类号: H01L27/146 , G01N15/14
CPC分类号: H01L27/14625 , G01N15/1434 , G01N15/1468 , G01N21/4788 , G01N21/51 , G01N2015/1454 , G02B21/0008 , G02B21/0088 , G03H1/0443 , G03H2001/0447 , H01L27/14643
摘要: This lensless imaging system comprises a receiving support configured to receive a sample, a light source configured to emit a light beam illuminating the sample in an illumination direction, the light source including a diode and a diaphragm, the diaphragm being positioned between the diode and the receiving support in the lighting direction, and a matrix photodetector configured to acquire at least one image of the sample, each image being formed by radiation emitted by the illuminated sample and including at least one elementary diffraction pattern, the receiving support being positioned between the light source and the matrix photodetector in the illumination direction.The system further comprises a light diffuser positioned between the diode and the diaphragm.
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90.
公开(公告)号:US20170256531A1
公开(公告)日:2017-09-07
申请号:US15591565
申请日:2017-05-10
申请人: Commissariat à I'énergie atomique et aux énergies alternatives , STMcroelectronics SA , Centre National de la Recherche Scientifique
IPC分类号: H01L27/02 , H01L29/74 , H01L29/749 , H01L27/12 , H01L29/66 , H01L29/423 , H01L29/10 , H01L29/78 , H01L29/747
CPC分类号: H01L27/0262 , H01L27/1203 , H01L29/1012 , H01L29/42308 , H01L29/66477 , H01L29/7436 , H01L29/747 , H01L29/749 , H01L29/78 , H01L29/7833
摘要: A protection device for protecting an IC against electrostatic discharge includes a buried insulant layer having a thickness that is no greater than fifty nanometers with bipolar transistors arranged thereon, one of which is NPN and the other of which is PNP. A base of one merges with a collector of the other. The transistors selectively conduct a discharge current between electrodes. A first semiconductor ground plane under the buried insulant layer is capable of being electrically biased and extends underneath the base of the first bipolar transistor. The ground plane and a base of one transistor have the same doping. However, its dopant density is at least tenfold greater than that of the base.
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