Abstract:
A memory device is provided including circuitry for correcting an over-erased memory cell in the memory device. The memory device may include a substrate. A control gate and a floating gate may be formed over the substrate. The memory device may include a source region and a drain region. A first resistive element may be coupled between the source region and the control gate.
Abstract:
Providing for suppression of room temperature electronic drift in a flash memory cell is provided herein. For example, a soft program pulse can be applied to the flash memory cell immediately after an erase pulse. The soft program pulse can help to mitigate dipole effects caused by non-combined electrons and holes in the memory cell. Specifically, by utilizing a relatively low gate voltage, the soft program pulse can inject electrons into the flash memory cell proximate a distribution of uncombined holes associated with the erase pulse in order to facilitate rapid combination of such particles. Rapid combination in this manner reduces dipole effects caused by non-combined distributions of opposing charge within the memory cell, reducing room temperature program state drift
Abstract:
Information storage devices and methods of manufacturing the same are provided. An information storage device includes a magnetic layer formed on an underlayer. The underlayer has at least one first region and at least one second region. The first and second regions have different crystallinity characteristics. The magnetic layer has at least one third region formed on the at least one first region and at least one fourth region formed on the at least one second region. The third and fourth regions have different magnetic anisotropic energy constants.
Abstract:
A fuel cell system that effectively processes a flue gas generated from a heat source of a fuel reforming apparatus. The fuel reforming apparatus generates a reforming gas containing hydrogen through a reformation reaction of the fuel from a fuel supply, and a fuel cell main body generates electrical energy through an electrochemical reaction of the reforming gas with an oxidizing agent. The fuel reforming apparatus includes a reforming reaction part and a heat source. The reforming reaction part induces a reforming reaction in the fuel, and the heat source provides heat energy to the reforming reaction part. A flue gas postprocessor induces an oxidation-reduction reaction in a flue gas exhausted by a combustion reaction of the heat source to decrease toxic ingredients, such as CO, hydrocarbons, and NOx, in the flue gas.
Abstract:
Provided may be a semiconductor device using magnetic domain wall movement. The semiconductor device may include a magnetic track having a plurality of magnetic domains and a thermal conductive insulating layer configured to contact the magnetic track. The thermal conductive insulating layer may prevent or reduce the magnetic track from being heated due to a current supplied to the magnetic track.
Abstract:
An evaporator for a fuel cell system generating steam used for a steam reforming reaction provides an evaporator including a body having an inner space formed by a hollow for allowing a flow of a fluid, and a plurality of cell barrier members dividing the inner space into a plurality of spaces and having heat conductivity. The spaces include at least one first space for allowing a flow of a flue gas and at least one second space for allowing a flow of water.
Abstract:
Provided is a bit patterned medium including bridges which induce exchange coupling between adjacent bits in order to reduce a switching field difference resulting from different magnetization directions of bits. The bridges and the bits are integrally formed with each other. The bits are locally connected by the bridges. A magnetostatic force for each bit is reduced due to an exchange coupling between adjacent bits, thereby reducing a switching field distribution of the bits.
Abstract:
A fuel cell system with a purging device and a method for stopping the operation of a fuel cell system comprising: a reforming device comprising a heat source unit to generate combustion heat to supply a reforming unit with heat to catalytically reform fuel to a hydrogen rich reforming gas; a fuel cell stack to generate electric energy by electrochemically reacting the reforming gas with an oxidizer and having an anode supplied with the reforming gas and a cathode supplied with the oxidizer therein; and a purging device to block the reforming gas and the oxidizer from the fuel cell stack and to supply an exhaust gas from the heat source unit into the fuel cell stack.
Abstract:
Provided is a magnetic memory device that uses a current induced switching (CID) method. The magnetic memory device that uses a CID method includes a lower electrode, a magnetic resistance structure that is formed on the lower electrode which comprises a free layer whose widths of two sides are varied, and an upper electrode formed on the magnetic resistance structure.
Abstract:
A carbon monoxide oxidizing catalyst for a reformer of a fuel cell system comprises: a compound including selenium oxide, tellurium oxide, bismuth oxide, or a combination thereof; copper oxide; and cesium oxide.