中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

153 records (took 0.056 seconds)

    Image acquiring apparatus, image acquiring method, and image acquiring program
    81.
    发明授权
    Image acquiring apparatus, image acquiring method, and image acquiring program 有权
    图像获取装置，图像获取方法和图像获取程序

    公开(公告)号：US07978898B2

    公开(公告)日：2011-07-12

    申请号：US12857110

    申请日：2010-08-16

    Applicant: Shigeru Uchiyama ,  Takayuki Inoue ,  Masatoshi Okugawa ,  Jeremy Cooke

    Inventor： Shigeru Uchiyama ,  Takayuki Inoue ,  Masatoshi Okugawa ,  Jeremy Cooke

    IPC: G06K9/00

    CPC classification number: G02B21/367

    Abstract: In acquisition of a micro image of a sample by a micro image acquiring unit, when a plurality of image acquiring ranges are set for the sample as an object of image acquisition, a plurality of corresponding focus information are set, and furthermore, when a plurality of partial images acquired by scanning the sample by the micro image acquiring unit include a partial image including mixing of a plurality of image acquiring ranges, the focus information is switched in the middle of scanning of the partial image. With such a structure, even when a plurality of objects are contained in the sample, images of the respective objects can be preferably acquired. Thereby, an image acquiring apparatus, an image acquiring method, and an image acquiring program which are capable of preferably acquiring images of a plurality of objects are realized even when the plurality of objects are contained in a sample.

    Abstract translation: 在通过微图像获取单元获取样本的微图像时，当为样本设置多个图像采集范围作为图像获取对象时，设置多个对应的焦点信息，此外，当多个 通过由微图像获取单元扫描样本而获取的部分图像包括包括多个图像获取范围的混合的部分图像，在部分图像的扫描中间切换焦点信息。 利用这种结构，即使在样本中包含多个对象，也可以优选地获取各个对象的图像。 因此，即使当多个对象被包含在样本中时，也能够实现能够优选地获取多个对象的图像的图像获取装置，图像获取方法和图像获取程序。

    PLASMA TREATMENT APPARATUS, METHOD FOR FORMING FILM, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
    83.
    发明申请
    PLASMA TREATMENT APPARATUS, METHOD FOR FORMING FILM, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 审中-公开
    等离子体处理装置，形成膜的方法和制造薄膜晶体管的方法

    公开(公告)号：US20100323501A1

    公开(公告)日：2010-12-23

    申请号：US12817224

    申请日：2010-06-17

    Applicant: Shunpei YAMAZAKI ,  Takayuki INOUE ,  Erumu KIKUCHI ,  Hiroto INOUE

    Inventor： Shunpei YAMAZAKI ,  Takayuki INOUE ,  Erumu KIKUCHI ,  Hiroto INOUE

    IPC: H01L21/20 ,  C23C16/453 ,  H01L21/28

    CPC classification number: H01J37/32449 ,  H01J37/3244 ,  H01J37/32541 ,  H01L29/66765

    Abstract: A structure of the plasma treatment apparatus is employed in which an upper electrode has projected portions provided with first introduction holes and recessed portions provided with second introduction holes, the first introduction hole of the upper electrode is connected to a first cylinder filled with a gas which is not likely to be dissociated, the second introduction hole is connected to a second cylinder filled with a gas which is likely to be dissociated, the gas which is not likely to be dissociated is introduced into a reaction chamber from an introduction port of the first introduction hole provided on a surface of the projected portion of the upper electrode, and the gas which is likely to be dissociated is introduced into the reaction chamber from an introduction port of the second introduction hole provided on a surface of the recessed portion.

    Abstract translation: 采用等离子体处理装置的结构，其中上电极具有设置有第一导入孔的突出部分和设置有第二导入孔的凹部，上电极的第一导入孔与填充有气体的第一圆筒连接， 不可能解离，第二引入孔连接到填充有可能解离的气体的第二气缸，不可能解离的气体从第一引入孔的引入口引入反应室 设置在上部电极的突出部分的表面上的引入孔和可能被解离的气体从设置在凹部的表面上的第二引入孔的引入口引入到反应室中。

    Clock signal generation circuit and semiconductor device
    84.
    发明授权
    Clock signal generation circuit and semiconductor device 有权
    时钟信号发生电路和半导体器件

    公开(公告)号：US07639058B2

    公开(公告)日：2009-12-29

    申请号：US12021843

    申请日：2008-01-29

    Applicant: Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Masami Endo ,  Hiroki Dembo ,  Daisuke Kawae ,  Takayuki Inoue ,  Munehiro Kozuma

    Inventor： Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Masami Endo ,  Hiroki Dembo ,  Daisuke Kawae ,  Takayuki Inoue ,  Munehiro Kozuma

    IPC: G06F1/04 ,  H03K3/00

    CPC classification number: G06F7/68 ,  G06F1/025 ,  G06F1/04 ,  H04L7/033

    Abstract: The semiconductor device is provided with a clock signal generation circuit that includes a reference clock signal generation circuit which generates a first reference clock signal, a first counter circuit which counts the number of rising edges of the first reference clock signal by using the first reference clock signal and a synchronizing signal, a second counter circuit which counts the number of rising edges of the first reference clock signal by using an enumerated value of the first counter circuit, a first divider circuit which divides a frequency of the first reference clock signal by using the enumerated value of the first counter circuit and generates a second reference clock signal, and a second divider circuit which divides a frequency of the second reference clock signal and generates a clock signal.

    Abstract translation: 半导体器件设置有时钟信号产生电路，其包括产生第一参考时钟信号的参考时钟信号产生电路，第一计数器电路，通过使用第一参考时钟对第一参考时钟信号的上升沿进行计数 信号和同步信号;第二计数器电路，通过使用第一计数器电路的枚举值对第一参考时钟信号的上升沿数进行计数;第一除法器电路，其使用第一参考时钟信号的频率进行分频; 第一计数器电路的枚举值并产生第二参考时钟信号，以及第二除法器电路，其分频第二参考时钟信号的频率并产生时钟信号。

    Fluorescence correlation spectroscopy analyzer
    86.
    发明申请
    Fluorescence correlation spectroscopy analyzer 有权
    荧光相关光谱分析仪

    公开(公告)号：US20080174776A1

    公开(公告)日：2008-07-24

    申请号：US12000732

    申请日：2007-12-17

    Applicant: Takayuki Inoue ,  Tadashi Maruno ,  Fumio Iwase

    Inventor： Takayuki Inoue ,  Tadashi Maruno ,  Fumio Iwase

    IPC: G01N21/64

    CPC classification number: G01N21/6456 ,  G01J3/2803 ,  G01J3/2823 ,  G01J3/2889 ,  G01J3/4406 ,  G01J2003/2813 ,  G01J2003/282 ,  G01N21/645 ,  G01N2021/6417 ,  G01N2021/6423 ,  H04N5/3454 ,  H04N5/372

    Abstract: A fluorescence correlation spectroscopy analyzer 1 is equipped with an excitation light illuminating optical system 21, a fluorescence imaging optical system 22, a CCD camera 15, and a data analyzer 16. The excitation light illuminating optical system 21 illuminates excitation light onto a predetermined region of a measured sample S. The fluorescence imaging optical system 22 images the fluorescence generated at the measured sample S onto the photodetection surface of the CCD camera 15. The CCD camera 15 performs photoelectric conversion of the fluorescence made incident onto the photodetection surface in accordance with the respective pixels and outputs the charges generated by the photoelectric conversion as detection signals from an output terminal. The data analyzer 16 inputs the detection signals based on the charges generated at the pixels, among the pixels of the CCD camera 15, that belong to an analyzed pixel set and computes autocorrelation functions of the input detection signals according to each pixel. A fluorescence correlation spectroscopy analyzer, which is enabled to perform fluorescence correlation spectroscopy analysis on multiple points of a measured sample simultaneously and at high speed, is thus provided.

    Abstract translation: 荧光相关光谱分析仪1配备有激发光照明光学系统21，荧光成像光学系统22，CCD照相机15和数据分析器16.激发光照射光学系统21将激发光照射到 测量样品S.荧光成像光学系统22将在测量样品S处产生的荧光图像成像到CCD照相机15的光电检测表面上。CCD照相机15根据照相机15对入射到光电检测表面上的荧光进行光电转换 并输出由光电转换产生的电荷作为来自输出端的检测信号。 数据分析器16基于在CCD摄像机15的像素中产生的属于分析像素组的像素产生的电荷输入检测信号，并根据每个像素计算输入检测信号的自相关函数。 因此，提供了可以同时进行高速度地对多个点进行荧光相关光谱分析的荧光相关光谱分析仪。

    SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
    87.
    发明申请
    SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE 失效
    半导体器件和电子器件

    公开(公告)号：US20080002454A1

    公开(公告)日：2008-01-03

    申请号：US11762146

    申请日：2007-06-13

    Applicant: Takayuki INOUE ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA

    Inventor： Takayuki INOUE ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA

    IPC: G11C11/40

    CPC classification number: G11C7/12 ,  H01L21/84 ,  H01L27/112 ,  H01L27/12

    Abstract: In relation to reading of data in a memory, it is an object to provide a semiconductor device mounted with a low power consumption memory. A semiconductor device including a word line, a bit line, and a memory cell electrically connected to the word line and the bit line, further includes a precharge circuit for making the bit line have an electric potential for reading data stored in the memory cell. The precharge circuit is provided for each bit line and connected to the bit line. Further, the precharge circuit is capable of making each bit line have an electric potential for reading the data stored in the memory cell for each bit line.

    Abstract translation: 关于在存储器中读取数据，目的是提供一种安装有低功耗存储器的半导体器件。 包括字线，位线和电连接到字线和位线的存储单元的半导体器件还包括用于使位线具有用于读取存储在存储单元中的数据的电位的预充电电路。 为每个位线提供预充电电路并连接到位线。 此外，预充电电路能够使每个位线具有用于读取存储在每个位线的存储单元中的数据的电位。

    Semiconductor device
    88.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US20080001825A1

    公开(公告)日：2008-01-03

    申请号：US11812618

    申请日：2007-06-20

    Applicant: Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Masami Endo ,  Hiroki Dembo ,  Daisuke Kawae ,  Takayuki Inoue

    Inventor： Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Masami Endo ,  Hiroki Dembo ,  Daisuke Kawae ,  Takayuki Inoue

    IPC: H01Q1/38

    CPC classification number: G06K19/07749

    Abstract: In a case where an ASK method is used for a communication method between a semiconductor device and a reader/writer, the amplitude of a radio signal is changed by data transmitted from the semiconductor device to the reader/writer when data is not transmitted from the reader/writer to the semiconductor device. Therefore, in some cases, the semiconductor device mistakes data transmitted from the semiconductor device itself for data transmitted from the reader/writer to the semiconductor device. The semiconductor device includes an antenna circuit, a transmission circuit, a reception circuit, and an arithmetic processing circuit. The antenna circuit transmits and receives a radio signal. The transmission circuit outputs to the reception circuit a signal showing whether or not the antenna circuit is transmitting the radio signal.

    Abstract translation: 在使用ASK方式进行半导体装置与读取器/写入器之间的通信方式的情况下，通过从半导体装置发送到读取器/写入器的数据，无线信号的振幅由数据不从 读取器/写入器到半导体器件。 因此，在某些情况下，半导体器件将从半导体器件本身发送的数据错误地从读取器/写入器发送到半导体器件的数据。 半导体器件包括天线电路，发送电路，接收电路和运算处理电路。 天线电路发送和接收无线电信号。 发送电路向接收电路输出表示天线电路是否正在发送无线信号的信号。

    Cyclic tetrapeptide compound and use thereof
    89.
    发明申请
    Cyclic tetrapeptide compound and use thereof 审中-公开
    环状四肽化合物及其用途

    公开(公告)号：US20060229236A1

    公开(公告)日：2006-10-12

    申请号：US10500113

    申请日：2002-12-27

    Applicant: Shigeki Satoh ,  Yasuharu Urano ,  Kazuhiko Osoda ,  Mitsuru Hosaka ,  Kozo Sawada ,  Takayuki Inoue ,  Hiroaki Mori ,  Shoji Takagaki ,  Takao Fujimura ,  Hideaki Matsuoka ,  Katsuhiko Yoshizawa

    Inventor： Shigeki Satoh ,  Yasuharu Urano ,  Kazuhiko Osoda ,  Mitsuru Hosaka ,  Kozo Sawada ,  Takayuki Inoue ,  Hiroaki Mori ,  Shoji Takagaki ,  Takao Fujimura ,  Hideaki Matsuoka ,  Katsuhiko Yoshizawa

    IPC: A61K38/12 ,  C07K5/12

    CPC classification number: C07K5/126 ,  A61K38/12

    Abstract: A cyclic tetrapeptide compound of the formula (I): wherein R1 is hydrogen; R2 is lower alkyl, aryl, optionally substituted ar(lower)alkyl, heterocyclic(lower)alkyl, cyclo(lower)alkyl(lower)alkyl, lower alkylcarbamoyl(lower)alkyl or arylcarbamoyl(lower)alkyl; R3 and R4 are each independently hydrogen, lower alkyl, optionally substituted ar(lower)alkyl, optionally substituted heterocyclic(lower)alkyl or cyclo(lower)alkyl(lower)alkyl, or R3 and R4 are linked together to form lower alkylene or condensed ring, or one of R3 and R4 is linked to the adjacent nitrogen atom to form a ring; R5 is lower alkylene or lower alkenylene, Y is [wherein RY1 is hydrogen, halogen or optionally protected hydroxy, RY2 is hydrogen, halogen, lower alkyl or phenyl, and RY3 is hydrogen or lower alkyl]; R8 is hydrogen or lower alkyl; and n is an integer of 1 or 2, or a salt thereof.

    Abstract translation: 式（I）的环状四肽化合物：其中R 1是氢; R 2是低级烷基，芳基，任选取代的芳（低级）烷基，杂环（低级）烷基，环（低级）烷基（低级）烷基，低级烷基氨基甲酰基（低级）烷基或芳基氨基甲酰基 烷基; R 3和R 4各自独立地为氢，低级烷基，任选取代的芳（低级）烷基，任选取代的杂环（低级）烷基或环（低级）烷基（低级） ）烷基或R 3和R 4连接在一起形成低级亚烷基或稠环，或者R 3和R 3中的一个 > 4 与相邻的氮原子连接形成环; R 5是低级亚烷基或低级亚烯基，Y是[其中R Y1是氢，卤素或任选保护的羟基，R Y2是氢， 卤素，低级烷基或苯基，R 3 Y 3是氢或低级烷基]。 R 8是氢或低级烷基; n为1或2的整数，或其盐。

    High electron mobility epitaxial substrate
    90.
    发明申请
    High electron mobility epitaxial substrate 有权
    高电子迁移率外延衬底

    公开(公告)号：US20060076576A1

    公开(公告)日：2006-04-13

    申请号：US10540514

    申请日：2003-12-19

    Applicant: Takenori Osada ,  Takayuki Inoue ,  Noboru Fukuhara

    Inventor： Takenori Osada ,  Takayuki Inoue ,  Noboru Fukuhara

    IPC: H01L31/0328 ,  H01L21/336

    CPC classification number: H01L29/7785

    Abstract: A compound semiconductor epitaxial substrate for use in a strain channel high electron mobility field effect transistor, comprising an InGaAs layer as a strain channel layer 6 and AlGaAs layers containing n-type impurities as back side and front side electron supplying layers 3 and 9, wherein an emission peak wavelength from the strain channel layer 6 at 77 K is set to 1030 nm or more by optimizing the In composition and the thickness of the strain channel layer 6.

    Abstract translation: 一种用于应变通道高电子迁移率场效应晶体管的化合物半导体外延基板，包括作为应变通道层6的InGaAs层和包含n型杂质的AlGaAs层作为背面侧和前侧电子供给层3和9，其中 通过优化应变通道层6的In组成和厚度，将77K处的应变通道层6的发射峰值波长设定为1030nm以上。

Patent Agency Ranking