公开(公告)号：US20120132719A1

公开(公告)日：2012-05-31

申请号：US13368380

申请日：2012-02-08

申请人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Munehiro KOZUMA

发明人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Munehiro KOZUMA

IPC分类号： G06K19/073

CPC分类号： G06K19/07749 ,  G06K7/0008 ,  G06K19/0716 ,  G06K2017/0045

摘要： A semiconductor device is provided with a power supply circuit having a function to generate a power supply voltage from a wireless signal and an A/D converter circuit having a function to detect the strength of the wireless signal by an A/D conversion of a voltage generated from the wireless signal. This enables to provide a semiconductor device which does not require replacement of batteries, has few limitations on its physical shape and mass, and has a function to detect a physical position. By formation of the semiconductor device with use of a thin film transistor formed over a plastic substrate, a lightweight semiconductor device, which has flexibility in physical shape and a function to detect a physical location, can be provided at low cost.

摘要翻译： 半导体器件具有电源电路，该电源电路具有从无线信号产生电源电压的功能，以及具有通过A / D转换电压来检测无线信号的强度的功能的A / D转换电路 由无线信号产生。 这能够提供不需要更换电池的半导体器件，其物理形状和质量几乎没有限制，并且具有检测物理位置的功能。 通过使用形成在塑料基板上的薄膜晶体管形成半导体器件，可以以低成本提供具有物理形状的灵活性和检测物理位置的功能的轻量级的半导体器件。

公开(公告)号：US20110261864A1

公开(公告)日：2011-10-27

申请号：US13177583

申请日：2011-07-07

申请人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE

发明人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Masami ENDO ,  Hiroki DEMBO ,  Daisuke KAWAE ,  Takayuki INOUE

IPC分类号： H04B1/56

CPC分类号： G06K19/07749

摘要： In a case where an ASK method is used for a communication method between a semiconductor device and a reader/writer, the amplitude of a radio signal is changed by data transmitted from the semiconductor device to the reader/writer when data is not transmitted from the reader/writer to the semiconductor device. Therefore, in some cases, the semiconductor device mistakes data transmitted from the semiconductor device itself for data transmitted from the reader/writer to the semiconductor device. The semiconductor device includes an antenna circuit, a transmission circuit, a reception circuit, and an arithmetic processing circuit. The antenna circuit transmits and receives a radio signal. The transmission circuit outputs to the reception circuit a signal showing whether or not the antenna circuit is transmitting the radio signal.

摘要翻译： 在使用ASK方式进行半导体装置与读取器/写入器之间的通信方式的情况下，通过从半导体装置发送到读取器/写入器的数据，无线信号的振幅由数据不从 读取器/写入器到半导体器件。 因此，在某些情况下，半导体器件将从半导体器件本身发送的数据错误地从读取器/写入器发送到半导体器件的数据。 半导体器件包括天线电路，发送电路，接收电路和运算处理电路。 天线电路发送和接收无线电信号。 发送电路向接收电路输出表示天线电路是否正在发送无线信号的信号。

公开(公告)号：US20110248268A1

公开(公告)日：2011-10-13

申请号：US13167762

申请日：2011-06-24

申请人： Koji DAIRIKI ,  Takayuki IKEDA ,  Hidekazu MIYAIRI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Satoshi KOBAYASHI

发明人： Koji DAIRIKI ,  Takayuki IKEDA ,  Hidekazu MIYAIRI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Satoshi KOBAYASHI

IPC分类号： H01L29/786

CPC分类号： H01L29/78618 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.

摘要翻译： 为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触 同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

公开(公告)号：US20080002454A1

公开(公告)日：2008-01-03

申请号：US11762146

申请日：2007-06-13

申请人： Takayuki INOUE ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA

发明人： Takayuki INOUE ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA

IPC分类号： G11C11/40

CPC分类号： G11C7/12 ,  H01L21/84 ,  H01L27/112 ,  H01L27/12

摘要： In relation to reading of data in a memory, it is an object to provide a semiconductor device mounted with a low power consumption memory. A semiconductor device including a word line, a bit line, and a memory cell electrically connected to the word line and the bit line, further includes a precharge circuit for making the bit line have an electric potential for reading data stored in the memory cell. The precharge circuit is provided for each bit line and connected to the bit line. Further, the precharge circuit is capable of making each bit line have an electric potential for reading the data stored in the memory cell for each bit line.

摘要翻译： 关于在存储器中读取数据，目的是提供一种安装有低功耗存储器的半导体器件。 包括字线，位线和电连接到字线和位线的存储单元的半导体器件还包括用于使位线具有用于读取存储在存储单元中的数据的电位的预充电电路。 为每个位线提供预充电电路并连接到位线。 此外，预充电电路能够使每个位线具有用于读取存储在每个位线的存储单元中的数据的电位。

公开(公告)号：US20090218568A1

公开(公告)日：2009-09-03

申请号：US12391398

申请日：2009-02-24

申请人： Koji DAIRIKI ,  Takayuki IKEDA ,  Hidekazu MIYAIRI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Satoshi KOBAYASHI

发明人： Koji DAIRIKI ,  Takayuki IKEDA ,  Hidekazu MIYAIRI ,  Yoshiyuki KUROKAWA ,  Hiromichi GODO ,  Daisuke KAWAE ,  Takayuki INOUE ,  Satoshi KOBAYASHI

IPC分类号： H01L29/786 ,  H01L33/00

CPC分类号： H01L29/78618 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.

摘要翻译： 为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触 同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

公开(公告)号：US20110204207A1

公开(公告)日：2011-08-25

申请号：US13024391

申请日：2011-02-10

申请人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA

发明人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA

IPC分类号： H01L27/146

CPC分类号： H01L31/0224 ,  H01L27/1443 ,  H01L27/14632 ,  H04N5/335 ,  H04N5/365

摘要： A photodetector circuit is provided that includes: a first wiring connected to an input terminal; a second wiring connected to an output terminal; and first and second photosensors each including a first terminal connected to the first wiring and a second terminal connected to the second wiring, wherein the first wiring and the second wiring are arranged in parallel, and the sum of resistance values of a first path from the input terminal to the output terminal via the first wiring, the first photosensor, and the second wiring is identical to the sum of resistance values of a second path from the input terminal to the output terminal via the first wiring, the second photosensor, and the second wiring.

摘要翻译： 提供一种光检测器电路，其包括：连接到输入端的第一布线; 连接到输出端子的第二布线; 以及第一和第二光电传感器，每个包括连接到第一布线的第一端子和连接到第二布线的第二端子，其中第一布线和第二布线并联布置，并且第一路径的电阻值之和 输入端子经由第一布线输出到第一布线，第一光电传感器和第二布线与通过第一布线，第二光电传感器和第二布线的从输入端到输出端的第二路径的电阻值之和相等 第二线。

公开(公告)号：US20110109592A1

公开(公告)日：2011-05-12

申请号：US12914656

申请日：2010-10-28

申请人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA ,  Shunpei YAMAZAKI

发明人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA ,  Shunpei YAMAZAKI

IPC分类号： G06F3/042

CPC分类号： G06F3/0421 ,  G02F1/13338 ,  G06F3/0412 ,  G06F3/0416 ,  G06F3/042 ,  G06F2203/04101 ,  H01L27/1225 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14678 ,  H01L29/7869

摘要： The display device has a display panel where a photosensor and a transistor including an oxide semiconductor layer are arranged. The display device detects a shadow of the object, which is projected on the display panel when the object approaches the display panel and blocks ambient light, with a photosensor, whereby a position or motion of the object is detected. Even when the object is not in contact with the display panel, the object can be detected.

摘要翻译： 显示装置具有布置有光电传感器和包括氧化物半导体层的晶体管的显示面板。 当物体接近显示面板并且用光电传感器阻挡环境光时，显示装置检测被投影在显示面板上的物体的阴影，由此检测物体的位置或运动。 即使物体与显示面板不接触，也可以检测物体。

公开(公告)号：US20120146027A1

公开(公告)日：2012-06-14

申请号：US13313539

申请日：2011-12-07

申请人： Hikaru TAMURA ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA

发明人： Hikaru TAMURA ,  Yoshiyuki KUROKAWA ,  Takayuki IKEDA

IPC分类号： H01L31/112 ,  H01L31/0376

CPC分类号： H01L27/14692

摘要： An adverse effect of parasitic capacitance on optical data output from a photodetector circuit is suppressed. A photodetector circuit includes a photoelectric conversion element; a first field-effect transistor; a second field-effect transistor; a first conductive layer functioning as a gate of the first field-effect transistor; an insulating layer provided over the first conductive layer; a semiconductor layer overlapping with the first conductive layer with the insulating layer interposed therebetween; a second conductive layer electrically connected to the semiconductor layer; and a third conductive layer electrically connected to the semiconductor layer, whose pair of side surfaces facing each other overlaps with at least one conductive layer including the first conductive layer with the insulating layer interposed therebetween, and which functions as the other of the source and the drain of the first field-effect transistor.

摘要翻译： 抑制寄生电容对光检测器电路的光数据输出的不良影响。 光检测器电路包括光电转换元件; 第一场效应晶体管; 第二场效应晶体管; 用作第一场效应晶体管的栅极的第一导电层; 设置在所述第一导电层上的绝缘层; 半导体层与第一导电层重叠，绝缘层插入其间; 电连接到半导体层的第二导电层; 电连接到所述半导体层的第三导电层，所述第三导电层与所述半导体层相对，所述第一导电层的一对侧表面与包括所述第一导电层的至少一个导电层重叠，所述第一导电层的绝缘层位于所述半导体层之间，并且其作为源和 第一场效应晶体管的漏极。

公开(公告)号：US20120032193A1

公开(公告)日：2012-02-09

申请号：US13193741

申请日：2011-07-29

申请人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA

发明人： Yoshiyuki KUROKAWA ,  Takayuki IKEDA

IPC分类号： H01L31/12 ,  H01L27/146 ,  H01L31/0216

CPC分类号： H01L27/1443 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/1469

摘要： To provide a solid-state image sensing device or a semiconductor display device, which can easily obtain the positional data of an object without contact. Included are a plurality of first photosensors on which light with a first incident angle is incident from a first incident direction and a plurality of second photosensors on which light with a second incident angle is incident from a second incident direction. The first incident angle of light incident on one of the plurality of first photosensors is larger than that of light incident on one of the other first photosensors. The second incident angle of light incident on one of the plurality of second photosensors is larger than that of light incident on one of the other second photosensors.

摘要翻译： 提供可以容易地获得物体的位置数据而不接触的固态图像感测装置或半导体显示装置。 包括多个第一光电传感器，其上具有第一入射角的光从第一入射方向入射，以及多个第二光电传感器，其上具有第二入射角的光从第二入射方向入射。 入射到多个第一光电传感器之一上的第一入射角大于入射到另一个第一光电传感器之一上的光的入射角。 入射到多个第二光电传感器中的一个上的光的第二入射角大于入射在另一个第二光电传感器之一上的光的入射角。

公开(公告)号：US20120002090A1

公开(公告)日：2012-01-05

申请号：US13170631

申请日：2011-06-28

申请人： Takeshi AOKI ,  Hikaru TAMURA ,  Takayuki IKEDA ,  Yoshiyuki KUROKAWA

发明人： Takeshi AOKI ,  Hikaru TAMURA ,  Takayuki IKEDA ,  Yoshiyuki KUROKAWA

IPC分类号： H04N5/335 ,  G09G5/00

CPC分类号： H04N5/353 ,  G09G3/3413 ,  G09G3/3648 ,  G09G2300/0876 ,  G09G2310/0235 ,  G09G2320/0261 ,  H01L27/1225 ,  H04N5/3696 ,  H04N5/3741 ,  H04N5/3745

摘要： An object is to provide a solid-state imaging device or a semiconductor display device with which a high-quality image can be taken. By performing operation using a global shutter method, a potential for controlling charge accumulation operation can be shared by all pixels. In addition, a first photosensor group includes a plurality of photosensors connected to a wiring supplied with an output signal, and a second photosensor group includes a plurality of photosensors connected to another wiring supplied with the output signal. A wiring for supplying a potential or a signal for controlling charge accumulation operation to the first photosensor group is connected to a wiring for supplying the potential or signal to the second photosensor group.

摘要翻译： 本发明的目的是提供一种可以获取高质量图像的固态成像装置或半导体显示装置。 通过使用全局快门方法执行操作，可以由所有像素共享用于控制电荷累积操作的电位。 此外，第一光传感器组包括连接到提供有输出信号的布线的多个光电传感器，并且第二光传感器组包括连接到提供有输出信号的另一布线的多个光电传感器。 用于向第一光电传感器组提供电位或用于控制电荷累积操作的信号的布线连接到用于向第二光电传感器组提供电位或信号的布线。