公开(公告)号：US20240266171A1

公开(公告)日：2024-08-08

申请号：US18606060

申请日：2024-03-15

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Rui Cheng ,  Karthik Janakiraman ,  Diwakar Kedlaya ,  Zubin Huang ,  Aykut Aydin

IPC: H01L21/033 ,  C23C16/38

CPC classification number: H01L21/0337 ,  C23C16/38 ,  H01L21/0332

Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

公开(公告)号：US20240229240A1

公开(公告)日：2024-07-11

申请号：US18615834

申请日：2024-03-25

Applicant: Applied Materials, Inc.

Inventor： Zubin Huang ,  Rui Cheng ,  Jian Li

IPC: C23C16/46 ,  C23C16/455 ,  C23C16/458 ,  H01J37/32

CPC classification number: C23C16/466 ,  C23C16/45563 ,  C23C16/4581 ,  H01J37/32724

Abstract: Exemplary temperature modulation methods may include delivering a gas through a purge line extending within a substrate support. The gas may be directed to a backside surface of the substrate support opposite a substrate support surface. The purge line may extend along a central axis of a shaft, the shaft being hermetically sealed with the substrate support. The substrate support may be characterized by a center and a circumferential edge. A first end of the purge line may be fixed at a first distance from the backside surface of the substrate support. The methods may include flowing the gas at a first flow rate via a flow pathway to remove heat from the substrate support to achieve a desired substrate support temperature profile.

公开(公告)号：US20230146981A1

公开(公告)日：2023-05-11

申请号：US18093648

申请日：2023-01-05

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Diwakar Kedlaya ,  Karthik Janakiraman ,  Gautam K. Hemani ,  Krishna Nittala ,  Alicia J. Lustgraaf ,  Zubin Huang ,  Brett Spaulding ,  Shashank Sharma ,  Kelvin Chan

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/50

CPC classification number: H01L21/0262 ,  H01L21/02532 ,  C23C16/24 ,  H01L21/02664 ,  C23C16/50 ,  H01L21/02592

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon as-deposited may be characterized by less than or about 3% hydrogen incorporation.

公开(公告)号：US20230118964A1

公开(公告)日：2023-04-20

申请号：US18068467

申请日：2022-12-19

Applicant: Applied Materials, Inc.

Inventor： Anton V. Baryshnikov ,  Aykut Aydin ,  Zubin Huang ,  Rui Cheng ,  Yi Yang ,  Diwakar Kedlaya ,  Venkatanarayana Shankaramurthy ,  Krishna Nittala ,  Karthik Janakiraman

IPC: H01L21/67

Abstract: A target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate at a process chamber of a manufacturing system is identified. Data of the target concentration profile is processed using a model. The model outputs a set of deposition process settings that corresponds to the target concentration profile. One or more operations of the deposition process are performed in accordance with the set of deposition process settings.

公开(公告)号：US20230051200A1

公开(公告)日：2023-02-16

申请号：US17399702

申请日：2021-08-11

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Rui Cheng ,  Karthik Janakiraman

IPC: H01L21/02 ,  H01L21/762

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. The methods may include depositing a silicon-containing layer on surfaces defining the processing region of the semiconductor processing chamber. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US20230050255A1

公开(公告)日：2023-02-16

申请号：US17401574

申请日：2021-08-13

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Rui Cheng ,  Ruiyun Huang ,  Dong Hyung Lee ,  Aykut Aydin ,  Karthik Janakiraman

IPC: H01L21/02 ,  H01L21/3205

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.

公开(公告)号：US20220341034A1

公开(公告)日：2022-10-27

申请号：US17240395

申请日：2021-04-26

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Rui Cheng ,  Karthik Janakiraman

IPC: C23C16/04 ,  C23C22/77 ,  C23C22/82 ,  C23C16/40 ,  C23C16/18

Abstract: Exemplary deposition methods may include delivering a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the boron-containing precursor. The dopant-containing precursor may include a metal. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a doped-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The doped-boron material may include greater than or about 80 at. % of boron in the doped-boron material.

公开(公告)号：US11456173B2

公开(公告)日：2022-09-27

申请号：US16797111

申请日：2020-02-21

Applicant: Applied Materials, Inc.

Inventor： Meenakshi Gupta ,  Rui Cheng ,  Srinivas Guggilla ,  Karthik Janakiraman ,  Diwakar N. Kedlaya ,  Zubin Huang

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/32

Abstract: Embodiments for processing a substrate are provided and include a method of trimming photoresist to provide photoresist profiles with smooth sidewall surfaces and to tune critical dimensions (CD) for the patterned features and/or a subsequently deposited dielectric layer. The method can include depositing a sacrificial structure layer on the substrate, depositing a photoresist on the sacrificial structure layer, and patterning the photoresist to produce a crude photoresist profile on the sacrificial structure layer. The method also includes trimming the photoresist with a plasma to produce a refined photoresist profile covering a first portion of the sacrificial structure layer while a second portion of the sacrificial structure layer is exposed, etching the second portion of the sacrificial structure layer to form patterned features disposed on the substrate, and depositing a dielectric layer on the patterned features.

公开(公告)号：US20220285232A1

公开(公告)日：2022-09-08

申请号：US17191026

申请日：2021-03-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Anton V. Baryshnikov ,  Aykut Aydin ,  Zubin Huang ,  Rui Cheng ,  Yi Yang ,  Diwakar Kedlaya ,  Venkatanarayana Shankaramurthy ,  Krishna Nittala ,  Karthik Janakiraman

IPC: H01L21/66 ,  H01L21/67 ,  G05B13/02 ,  G05B13/04

Abstract: Methods and systems for controlling concentration profiles of deposited films using machine learning are provided. Data associated with a target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate is provided as input to a trained machine learning model. One or more outputs of the trained machine learning model are obtained. Process recipe data identifying one or more sets of deposition process settings is determined from the one or more outputs. For each set of deposition process setting, an indication of a level of confidence that a respective set of deposition process settings corresponds to the target concentration profile for the film to be deposited on the substrate is also determined. In response to an identification of the respective set of deposition process settings with a level of confidence that satisfies a level of confidence criterion, one or more operations of the deposition process are performed in accordance with the respective set of deposition process settings.

公开(公告)号：US20220199404A1

公开(公告)日：2022-06-23

申请号：US17125349

申请日：2020-12-17

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Rui Cheng ,  Karthik Janakiraman

IPC: H01L21/02 ,  C23C16/455

Abstract: Exemplary deposition methods may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. The method may include striking a plasma in the processing region between a faceplate and a pedestal of the semiconductor processing chamber. The pedestal may support a substrate including a patterned photoresist. The method may include maintaining a temperature of the substrate less than or about 200° C. The method may also include depositing a silicon-containing film along the patterned photoresist.