公开(公告)号：US11939674B2

公开(公告)日：2024-03-26

申请号：US18116609

申请日：2023-03-02

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Aykut Aydin ,  Diwakar Kedlaya

IPC: C23C16/30 ,  C23C16/38 ,  C23C16/455 ,  H01J37/32

CPC classification number: C23C16/45536 ,  C23C16/303 ,  C23C16/38 ,  H01J37/32009

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 1:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US11784032B2

公开(公告)日：2023-10-10

申请号：US17285074

申请日：2018-11-14

Applicant: Applied Materials, Inc.

Inventor： Lizhong Sun ,  Xiaodong Yang ,  Yufei Zhou ,  Yi Yang

IPC: H01J37/34 ,  C23C14/35

CPC classification number: H01J37/3455 ,  C23C14/35 ,  H01J37/3408 ,  H01J2237/332

Abstract: A chamber includes a target (16) and a magnetron (50) disposed over the target (16). The magnetron (50) includes a plurality of magnets (52, 54). The magnetron (50) has a longitudinal dimension and a lateral dimension. The longitudinal dimension of the magnetron (50) is tilted with respect to the target (16) so the distances between magnets (52, 54) and the target (16) vary. As the magnetron (50) rotates during operation, the strength of the magnetic field produced by the magnetron (50) is an average of the various strengths of magnetic fields produced by the magnets (52, 54). The averaging of the strengths of the magnetic fields leads to uniform film properties and uniform target erosion.

公开(公告)号：US11017986B2

公开(公告)日：2021-05-25

申请号：US16001264

申请日：2018-06-06

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Yi Yang ,  Truong Nguyen ,  Nattaworn Boss Nunta ,  Joseph F. Aubuchon ,  Tuan Anh Nguyen ,  Karthik Janakiraman

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/40 ,  C23C16/50 ,  C23C16/52 ,  C23C16/44 ,  C23C16/509

Abstract: Disclosed embodiments generally relate to a processing chamber that includes a perforated lid, a gas blocker disposed on the perforated lid, and a substrate support disposed below the perforated lid. The gas blocker includes a gas manifold, a central gas channel formed in the gas manifold, a first gas distribution plate that includes inner and outer trenches surrounding the central gas channel, and a first and second gas channels formed in the gas manifold. The first gas channel is in fluid communication with a first gas source and the inner trench, and the second gas channel is in fluid communication with the first gas source and the outer trench and a second gas distribution plate The first gas channel is in further fluid communication with a third gas distribution plate that is disposed below the second gas distribution plate, and a plurality of pass-through channels that are disposed between the second gas distribution plate and the third gas distribution plate. The second gas distribution plate includes a plurality of through holes formed through a bottom of the second gas distribution plate as well as a central opening in fluid communication with the central gas channel The second gas distribution plate further includes a recess region formed in a top surface of the second gas distribution plate, and the recess region surrounds the central opening.

公开(公告)号：US20250112046A1

公开(公告)日：2025-04-03

申请号：US18980163

申请日：2024-12-13

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Rui Cheng ,  Karthik Janakiraman ,  Diwakar Kedlaya ,  Zubin Huang ,  Aykut Aydin

IPC: H01L21/033 ,  C23C16/38

Abstract: Exemplary semiconductor processing methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a boron-containing precursor into the substrate processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-silicon-containing layer on a substrate in the substrate processing region of the semiconductor processing chamber. The boron-and-silicon-containing layer may be characterized by an increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer opposite the first surface. A flow rate of the boron-containing precursor may be increased during the deposition of the boron-and-silicon-containing layer.

公开(公告)号：US20240145246A1

公开(公告)日：2024-05-02

申请号：US17973927

申请日：2022-10-26

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  In Soo Jung ,  Sean S. Kang ,  Srinivas D. Nemani ,  Papo Chen ,  Ellie Y. Yieh

IPC: H01L21/223 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/223 ,  H01L21/02236 ,  H01L21/3065

Abstract: Embodiments of the present technology include semiconductor processing methods. The methods may include providing a silicon-containing precursor and a dopant precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the semiconductor processing chamber. A silicon-containing material may be formed on the substrate. The methods may include contacting the silicon-containing material with the silicon-containing precursor and the dopant precursor. The methods may include forming a doped silicon-containing material on the silicon-containing material. The methods may include oxidizing the substrate. The oxidizing may form an oxidized doped silicon-containing material. The methods may include etching the oxidized doped silicon-containing material.

公开(公告)号：US20230203652A1

公开(公告)日：2023-06-29

申请号：US18116609

申请日：2023-03-02

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Aykut Aydin ,  Diwakar Kedlaya

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/30 ,  C23C16/38

CPC classification number: C23C16/45536 ,  H01J37/32009 ,  C23C16/303 ,  C23C16/38

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 1:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US11462630B2

公开(公告)日：2022-10-04

申请号：US16640580

申请日：2018-08-28

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Yi Yang ,  Karthik Janakiraman ,  Abhijit Basu Mallick

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/78

Abstract: Embodiments described herein generally relate to doping of three dimensional (3D) structures on a substrate. In some embodiments, a conformal dopant containing film may be deposited over the 3D structures. Suitable dopants that may be incorporated in the film include halogen atoms. The film may be subsequently annealed to diffuse the dopants into the 3D structures.

公开(公告)号：US20220199373A1

公开(公告)日：2022-06-23

申请号：US17127201

申请日：2020-12-18

Applicant: Applied Materials, Inc.

Inventor： Venkata Sharat Chandra Parimi ,  Zubin Huang ,  Manjunath Veerappa Chobari Patil ,  Nitin Pathak ,  Yi Yang ,  Badri N. Ramamurthi ,  Truong Van Nguyen ,  Rui Cheng ,  Diwakar Kedlaya

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/458 ,  C23C16/44

Abstract: Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.

公开(公告)号：US11335555B2

公开(公告)日：2022-05-17

申请号：US17045323

申请日：2019-04-05

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Yi Yang ,  Karthik Janakiraman

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/285 ,  H01L21/324 ,  H01L21/225

Abstract: Methods of conformally doping three dimensional structures are discussed. Some embodiments utilize conformal silicon films deposited on the structures. The silicon films are doped after deposition to comprise halogen atoms. The structures are then annealed to dope the structures with halogen atoms from the doped silicon films.

公开(公告)号：US20220108892A1

公开(公告)日：2022-04-07

申请号：US17063339

申请日：2020-10-05

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Rui Cheng ,  Karthik Janakiraman ,  Diwakar Kedlaya ,  Zubin Huang ,  Aykut Aydin

IPC: H01L21/033 ,  C23C16/38

Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.