公开(公告)号：US12142480B2

公开(公告)日：2024-11-12

申请号：US17401574

申请日：2021-08-13

Applicant: Applied Materials, Inc.

Inventor： Qinghua Zhao ,  Rui Cheng ,  Ruiyun Huang ,  Dong Hyung Lee ,  Aykut Aydin ,  Karthik Janakiraman

IPC: H01L21/02 ,  H01L21/3205

Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.

公开(公告)号：US11939674B2

公开(公告)日：2024-03-26

申请号：US18116609

申请日：2023-03-02

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Aykut Aydin ,  Diwakar Kedlaya

IPC: C23C16/30 ,  C23C16/38 ,  C23C16/455 ,  H01J37/32

CPC classification number: C23C16/45536 ,  C23C16/303 ,  C23C16/38 ,  H01J37/32009

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 1:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US11961739B2

公开(公告)日：2024-04-16

申请号：US17063339

申请日：2020-10-05

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Rui Cheng ,  Karthik Janakiraman ,  Diwakar Kedlaya ,  Zubin Huang ,  Aykut Aydin

IPC: H01L21/033 ,  C23C16/38

CPC classification number: H01L21/0337 ,  C23C16/38 ,  H01L21/0332

Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

公开(公告)号：US11676813B2

公开(公告)日：2023-06-13

申请号：US17025009

申请日：2020-09-18

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Rui Cheng ,  Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Bo Qi ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L21/324 ,  H01J37/32 ,  C23C16/56 ,  C23C16/50 ,  C23C16/30 ,  C23C16/24

CPC classification number: H01L21/0257 ,  C23C16/24 ,  C23C16/30 ,  C23C16/50 ,  C23C16/56 ,  H01J37/3244 ,  H01L21/02532 ,  H01L21/324 ,  H01J2237/332

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include delivering a dopant-containing precursor with the silicon-containing precursor and the boron-containing precursor. The dopant-containing precursor may include one or more of carbon, nitrogen, oxygen, or sulfur. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber. The silicon-and-boron material may include greater than or about 1 at. % of a dopant from the dopant-containing precursor.

公开(公告)号：US11618949B2

公开(公告)日：2023-04-04

申请号：US17087346

申请日：2020-11-02

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Aykut Aydin ,  Diwakar Kedlaya

IPC: C23C16/38 ,  C23C16/455 ,  H01J37/32 ,  C23C16/30

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US20220238331A1

公开(公告)日：2022-07-28

申请号：US17157307

申请日：2021-01-25

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Rui Cheng ,  Shishi Jiang ,  Karthik Janakiraman

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/768 ,  H01J37/32

Abstract: Methods for gap filling features of a substrate surface are described. Each of the features extends a distance into the substrate from the substrate surface and have a bottom and at least one sidewall. The methods include depositing a non-conformal film in the feature of the substrate surface with a plurality of high-frequency ratio-frequency (HFRF) pulses. The non-conformal film has a greater thickness on the bottom of the features than on the at least one sidewall. The deposited film is substantially etched from the sidewalls of the feature. The deposition and etch processes are repeated to fill the features.

公开(公告)号：US20240266185A1

公开(公告)日：2024-08-08

申请号：US18106697

申请日：2023-02-07

Applicant: Applied Materials, Inc.

Inventor： Han Wang ,  Yu Yang ,  Jing Zhang ,  Aykut Aydin ,  Guoqing Li ,  Guangyan Zhong ,  Rui Cheng ,  Gene H. Lee ,  Srinivas Guggilla ,  Sinae Heo ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick ,  Karthik Janakiraman

IPC: H01L21/311 ,  H01L21/033

CPC classification number: H01L21/31144 ,  H01L21/0332

Abstract: Exemplary semiconductor processing methods may include depositing a metal-doped boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The metal-doped boron-containing material may include a metal dopant comprising tungsten. The substrate may include a silicon-containing material. The methods may include depositing one or more additional materials over the metal-doped boron-containing material. The one or more additional materials may include a patterned photoresist material. The methods may include transferring a pattern from the patterned photoresist material to the metal-doped boron-containing material. The methods may include etching the metal-doped boron-containing material with a chlorine-containing precursor. The methods may include etching the silicon-containing material with a fluorine-containing precursor. The metal dopant may enhance an etch rate of the silicon-containing material. The methods may include removing the metal-doped boron-containing material from the substrate with a halogen-containing precursor.

公开(公告)号：US11827514B2

公开(公告)日：2023-11-28

申请号：US17081086

申请日：2020-10-27

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Krishna Nittala ,  Karthik Janakiraman ,  Yi Yang ,  Gautam K. Hemani

IPC: C01B33/04 ,  C01B35/02

CPC classification number: C01B33/043 ,  C01B35/02 ,  C01P2002/02 ,  C01P2006/90

Abstract: Deposition methods may prevent or reduce crystallization of silicon in a deposited amorphous silicon film that may occur after annealing at high temperatures. The crystallization of silicon may be prevented by doping the silicon with an element. The element may be boron, carbon, or phosphorous. Doping above a certain concentration for the element prevents substantial crystallization at high temperatures and for durations at or greater than 30 minutes. Methods and devices are described.

公开(公告)号：US11532525B2

公开(公告)日：2022-12-20

申请号：US17191026

申请日：2021-03-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Anton V Baryshnikov ,  Aykut Aydin ,  Zubin Huang ,  Rui Cheng ,  Yi Yang ,  Diwakar Kedlaya ,  Venkatanarayana Shankaramurthy ,  Krishna Nittala ,  Karthik Janakiraman

IPC: H01L21/66 ,  G05B13/04 ,  G05B13/02 ,  H01L21/67

Abstract: Methods and systems for controlling concentration profiles of deposited films using machine learning are provided. Data associated with a target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate is provided as input to a trained machine learning model. One or more outputs of the trained machine learning model are obtained. Process recipe data identifying one or more sets of deposition process settings is determined from the one or more outputs. For each set of deposition process setting, an indication of a level of confidence that a respective set of deposition process settings corresponds to the target concentration profile for the film to be deposited on the substrate is also determined. In response to an identification of the respective set of deposition process settings with a level of confidence that satisfies a level of confidence criterion, one or more operations of the deposition process are performed in accordance with the respective set of deposition process settings.

公开(公告)号：US20210140045A1

公开(公告)日：2021-05-13

申请号：US17087346

申请日：2020-11-02

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Aykut Aydin ,  Diwakar Kedlaya

IPC: C23C16/455 ,  C23C16/38 ,  C23C16/30 ,  H01J37/32

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.