公开(公告)号：US11551905B2

公开(公告)日：2023-01-10

申请号：US15925739

申请日：2018-03-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Yaoling Pan ,  Vijaykumar Krithivasan ,  Shimin Mao ,  Kelvin Chan ,  Michael D. Willwerth ,  Anantha Subramani ,  Ashish Goel ,  Chih-shun Lu ,  Philip Allan Kraus ,  Patrick John Tae ,  Leonard Tedeschi

IPC: H01J37/244 ,  H01L21/67 ,  H01L41/047 ,  H01L41/053 ,  H01L41/29 ,  H01L41/04 ,  H01J37/32 ,  H01L41/31

Abstract: Embodiments described herein include a resonant process monitor and methods of forming such a resonant process monitor. In an embodiment, the resonant process monitor includes a frame that has a first opening and a second opening. In an embodiment, a resonant body seals the first opening of the frame. In an embodiment, a first electrode on a first surface of the resonant body contacts the frame and a second electrode is on a second surface of the resonant body. Embodiments also include a back plate that seals the second opening of the frame. In an embodiment the back plate is mechanically coupled to the frame, and the resonant body, the back plate, and interior surfaces of the frame define a cavity.

公开(公告)号：US20220199406A1

公开(公告)日：2022-06-23

申请号：US17534287

申请日：2021-11-23

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Ruiying Hao ,  Wayne French ,  Kelvin Chan

IPC: H01L21/033 ,  H01J37/32 ,  G03F7/004 ,  G03F7/16

Abstract: Embodiments disclosed herein include a method of forming a metal-oxo photoresist on a substrate. In an embodiment, the method comprises repeating a deposition cycle, where each iteration of the deposition cycle comprises: a) flowing a metal precursor into a chamber comprising the substrate; and b) flowing an oxidant into the chamber, where the oxidant and the metal precursor react to form the metal-oxo photoresist.

公开(公告)号：US20220197146A1

公开(公告)日：2022-06-23

申请号：US17464432

申请日：2021-09-01

Applicant: Applied Materials, Inc.

Inventor： Lauren Bagby ,  Stephen Weeks ,  Aaron Dangerfield ,  Lakmal Kalutarage ,  Jeffrey Anthis ,  Mark Saly ,  Regina Freed ,  Wayne French ,  Kelvin Chan

IPC: G03F7/16

Abstract: Embodiments include a method of forming a metal oxo photoresist on a substrate. In an embodiment, the method comprises providing a target in a vacuum chamber, where the target comprises a metal. The method may continue with flowing a hydrocarbon gas and an inert gas into the vacuum chamber, and striking a plasma in the vacuum chamber. In an embodiment, the method further continues with depositing the metal oxo photoresist on the substrate, where the metal oxo photoresist comprise metal-carbon bonds and metal-oxygen bonds.

公开(公告)号：US20220122883A1

公开(公告)日：2022-04-21

申请号：US17072135

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： Sony Varghese ,  M. Arif Zeeshan ,  Shantanu Kallakuri ,  Kelvin Chan

IPC: H01L21/768

Abstract: Disclosed are approaches for forming a semiconductor device. In some embodiments, a method may include a method may include providing a semiconductor device including plurality of patterning structures over a device stack, each of the plurality of patterning structures including a first sidewall, a second sidewall, and an upper surface. The method may further include forming a seed layer along just the first sidewall and the upper surface of each of the plurality of patterning structures, forming a metal layer atop the seed layer, forming a fill material between each of the plurality of patterning structures, and removing the plurality of patterning structures.

公开(公告)号：US20220119938A1

公开(公告)日：2022-04-21

申请号：US17072143

申请日：2020-10-16

Applicant: Applied Materials, Inc.

Inventor： M. Arif Zeeshan ,  Tristan Y. Ma ,  Kelvin Chan

IPC: C23C16/02 ,  C23C16/505 ,  H01L21/285 ,  H01L21/02 ,  H01J37/32 ,  H01L21/288 ,  H01L27/108

Abstract: Embodiments herein include void-free material depositions on a substrate (e.g., in a void-free trench-filled (VFTF) component). In some embodiments, a method may include providing a plurality of device structures extending from a base, each of the plurality of device structures including a first sidewall opposite a second sidewall and a top surface extending between the first and second sidewalls, and providing a seed layer over the plurality of device structures. The method may further include forming a dielectric layer along just the top surface and along an upper portion of the first and second sidewalls using an angled deposition delivered to the plurality of device structures at a non-zero angle of inclination relative to a perpendicular extending from an upper surface of the base, and forming a fill material within one or more trenches defined by the plurality of device structures.

公开(公告)号：US20220068923A1

公开(公告)日：2022-03-03

申请号：US17011729

申请日：2020-09-03

Applicant: Applied Materials, Inc.

Inventor： M. Arif Zeeshan ,  Kelvin Chan ,  Shantanu Kallakuri ,  Sony Varghese

IPC: H01L27/105 ,  C23C16/04 ,  C23C16/02

Abstract: In one embodiment, a method of selectively forming a deposit may include
providing a substrate, the substrate having a plurality of surface features, extending at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may include directing a reactive beam to the plurality of surface features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the surface features, and is not deposited on a second portion of the surface features. The method may further include exposing the substrate to a reactive deposition process after the directing the reactive ion beam, wherein a deposit layer selectively grows over the seed layer.

公开(公告)号：US20220026807A1

公开(公告)日：2022-01-27

申请号：US17356304

申请日：2021-06-23

Applicant: Applied Materials, Inc

Inventor： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC: G03F7/16 ,  G03F7/004 ,  C23C16/40 ,  C23C16/50 ,  C23C16/455

Abstract: Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US20210287898A1

公开(公告)日：2021-09-16

申请号：US17197475

申请日：2021-03-10

Applicant: Applied Materials, Inc

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Yi Xu ,  Yu Lei ,  Xianmin Tang ,  Kelvin Chan ,  Alexander Jansen ,  Philip A. Kraus

IPC: H01L21/02 ,  H01L21/30

Abstract: Method for selectively oxidizing the dielectric surface of a substrate surface comprising a dielectric surface and a metal surface are discussed. Method for cleaning a substrate surface comprising a dielectric surface and a metal surface are also discussed. The disclosed methods oxidize the dielectric surface and/or clean the substrate surface using a plasma generated from hydrogen gas and oxygen gas. The disclosed method may be performed in a single step without the use of separate competing oxidation and reduction reactions. The disclosed methods may be performed at a constant temperature and/or within a single processing chamber.

公开(公告)号：US11094533B2

公开(公告)日：2021-08-17

申请号：US16590734

申请日：2019-10-02

Applicant: Applied Materials, Inc.

Inventor： Eswaranand Venkatasubramanian ,  Srinivas Gandikota ,  Kelvin Chan ,  Atashi Basu ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  C23C16/40 ,  C23C16/455

Abstract: A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film. Methods comprise depositing a low-k dielectric film optionally sandwiched by a silicon nitride or oxide film to form a spacer adjacent to a gate electrode of a microelectronic device on a semiconductor substrate, wherein the low-k dielectric film comprises a vanadium-containing film.

公开(公告)号：US10985009B2

公开(公告)日：2021-04-20

申请号：US16374345

申请日：2019-04-03

Applicant: Applied Materials, Inc.

Inventor： Lakmal Charidu Kalutarage ,  Mark Saly ,  David Thompson ,  William John Durand ,  Kelvin Chan ,  Hanhong Chen ,  Philip Allan Kraus

IPC: H01L21/02 ,  C23C16/513 ,  C23C16/26

Abstract: Embodiments include a method for forming a carbon containing film. In an embodiment, the method comprises flowing a precursor gas into a processing chamber. For example the precursor gas comprises carbon containing molecules. In an embodiment, the method further comprises flowing a co-reactant gas into the processing chamber. In an embodiment, the method further comprises striking a plasma in the processing chamber. In an embodiment plasma activated co-reactant molecules initiate polymerization of the carbon containing molecules in the precursor gas. Embodiments may also include a method that further comprises depositing a carbon containing film onto a substrate in the processing chamber.