公开(公告)号：US10892186B2

公开(公告)日：2021-01-12

申请号：US16159128

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Ben-Li Sheu ,  Feng Q. Liu ,  Tae Hong Ha ,  Mei Chang ,  Shirish Pethe

IPC: H01L21/768 ,  C23C16/34 ,  C23C16/455 ,  C23C16/44 ,  C23C14/34 ,  C23C16/04 ,  C23C14/04 ,  C23C14/02 ,  C23C16/18 ,  C23C14/14

Abstract: Methods and apparatus to fill a feature with a seamless gapfill of copper are described. A copper gapfill seed layer is deposited on a substrate surface by atomic layer deposition followed by a copper deposition by physical vapor deposition to fill the gap with copper.

公开(公告)号：US10752990B2

公开(公告)日：2020-08-25

申请号：US15471291

申请日：2017-03-28

Applicant: Applied Materials, Inc.

Inventor： Daping Yao ,  Kenric Choi ,  Xiaoxiong Yuan ,  Jiang Lu ,  Can Xu ,  Paul F. Ma ,  Mei Chang

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/448 ,  C23C16/18 ,  F16K31/12 ,  F16K31/60

Abstract: Apparatus and methods for supplying a gas to a processing chamber are described. The apparatus comprises an inlet line and an outlet line, each with two valves, in fluid communication an ampoule. A bypass line connects the inlet valve and outlet valve closest to the ampoule. The apparatus and methods of use allow a precursor residue to be removed from the delivery lines of a processing chamber.

公开(公告)号：US10724135B2

公开(公告)日：2020-07-28

申请号：US15909352

申请日：2018-03-01

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Mei Chang ,  David Thompson

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/02 ,  C23C16/04 ,  H01L21/768 ,  H01L21/285 ,  C23C16/458

Abstract: Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film.

公开(公告)号：US10553425B2

公开(公告)日：2020-02-04

申请号：US15714162

申请日：2017-09-25

Applicant: Applied Materials, Inc. ,  The Regents of the University of California

Inventor： Jessica S. Kachian ,  Naomi Yoshida ,  Mei Chang ,  Mary Edmonds ,  Andrew C. Kummel ,  Sang Wook Park ,  Hyunwoong Kim

IPC: H01L21/02

Abstract: Embodiments described herein provide a self-limiting and saturating Si—Ox bilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO2, but instead produce a saturated Si—Ox film with —OH termination to make substrate surfaces highly reactive towards metal ALD precursors to seed high nucleation and growth of gate oxide ALD materials.

公开(公告)号：US10535527B2

公开(公告)日：2020-01-14

申请号：US16028855

申请日：2018-07-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Yi Xu ,  Takashi Kuratomi ,  Avgerinos V. Gelatos ,  Vikash Banthia ,  Mei Chang ,  Kazuya Daito

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/42

Abstract: A method for forming a film on a substrate in a semiconductor process chamber includes forming a first layer on the substrate using a plasma enhanced process and a gas compound of a chloride-based gas, a hydrogen gas, and an inert gas. The process chamber is then purged and the first layer is thermally soaked with a hydrogen-based precursor gas. The process chamber is then purged again and the process may be repeated with or without the plasma enhanced process until a certain film thickness is achieved on the substrate.

公开(公告)号：US20190385838A1

公开(公告)日：2019-12-19

申请号：US16551398

申请日：2019-08-26

Applicant: Applied Materials, Inc.

Inventor： Kai Wu ,  Vikash Banthia ,  Sang Ho Yu ,  Mei Chang ,  Feiyue Ma

IPC: H01L21/02 ,  H01L21/285 ,  H01L21/768

Abstract: Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.

公开(公告)号：US10373824B2

公开(公告)日：2019-08-06

申请号：US15727351

申请日：2017-10-06

Applicant: Applied Materials, Inc.

Inventor： Andrew C. Kummel ,  Mary Edmonds ,  Mei Chang ,  Jessica S. Kachian

IPC: C23C16/24 ,  H01L21/02

Abstract: Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a III-V surface at a temperature between 300° C. and 500° C. to form a first layer. Methods may include desorbing chlorine from the first layer by treating the first layer with atomic hydrogen to form a second layer. Methods may include forming a silicon multilayer on the second layer by cycling dosing between 1 and 100 cycles of one or more second chlorosilane precursors and atomic hydrogen at a temperature between 300° C. and 500° C. A layered composition includes a first layer selected from the group consisting of InxGa1−xAs, InxGa1−xSb, InxGa1−xN, SiGe, and Ge, wherein X is between 0.1 and 0.99, and a second layer, wherein the second layer comprises Si—H and Si—OH.

公开(公告)号：USRE47440E1

公开(公告)日：2019-06-18

申请号：US15678883

申请日：2017-08-16

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Mei Chang ,  Faruk Gungor ,  Paul F. Ma ,  David Chu ,  Chien-Teh Kao ,  Hyman Lam ,  Dien-Yeh Wu

IPC: F17D3/00 ,  F16K11/20

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectable with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

公开(公告)号：US10283345B2

公开(公告)日：2019-05-07

申请号：US15280161

申请日：2016-09-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin Xie ,  Feng Q. Liu ,  Daping Yao ,  Alexander Jansen ,  Joung Joo Lee ,  Adolph Miller Allen ,  Xianmin Tang ,  Mei Chang

IPC: B08B7/00 ,  H01L21/02 ,  H01L21/768 ,  B08B5/00 ,  B08B9/027 ,  B08B3/00 ,  B08B9/00 ,  B08B3/10 ,  C23G1/24 ,  F01D5/00

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol to reduce a contaminated surface of the conductive material.

公开(公告)号：US20190078203A1

公开(公告)日：2019-03-14

申请号：US16129232

申请日：2018-09-12

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/52 ,  C23C16/455 ,  C23C16/513

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.