公开(公告)号：US07411817B2

公开(公告)日：2008-08-12

申请号：US11483425

申请日：2006-07-07

申请人： Jean-Pierre Nozieres ,  Bernard Dieny ,  Olivier Redon ,  Ricardo Sousa ,  Ioan-Lucian Prejbeanu

发明人： Jean-Pierre Nozieres ,  Bernard Dieny ,  Olivier Redon ,  Ricardo Sousa ,  Ioan-Lucian Prejbeanu

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1675 ,  G11C11/5607

摘要： A system and method for writing to a magnetic memory written in a thermally assisted manner, each memory point formed by a magnetic tunnel junction, and having a substantially circular cross-section of the memory which is parallel to the plane of the layers forming the tunnel junction. The tunnel junction includes at least a trapped layer with a fixed magnetisation direction, a free layer with a variable magnetisation direction with an insulating layer arranged there between. The free layer is formed from at least one soft magnetic layer and a trapped layer, with the two layers being magnetically coupled by contact. During read operations and at rest, the operating temperature of the memory is lower than the blocking temperature of the free and trapped layers, respectively.

摘要翻译： 一种用于写入以热辅助方式写入的磁存储器的系统和方法，每个存储点由磁性隧道结形成，并且具有平行于形成隧道的层的平面的存储器的基本圆形的横截面 交界处 隧道结至少包括具有固定磁化方向的捕获层，具有可变磁化方向的自由层，其间布置有绝缘层。 自由层由至少一个软磁层和捕获层形成，其中两层通过接触磁耦合。 在读取操作和静止期间，存储器的工作温度分别低于游离和俘获层的阻挡温度。

公开(公告)号：US20070263434A1

公开(公告)日：2007-11-15

申请号：US11780402

申请日：2007-07-19

申请人： Bernard Dieny ,  Ricardo Sousa ,  Dana Stanescu

发明人： Bernard Dieny ,  Ricardo Sousa ,  Dana Stanescu

IPC分类号： G11C11/02

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254

摘要： The device successively comprises a first electrode (12), a magnetic reference layer (1), a tunnel barrier (3), a magnetic storage layer (4) and a second electrode (13). At least one first thermal barrier is arranged between the storage layer (4) and the second electrode (13) and is formed by a material having a thermal conductivity lower than 5 W/m° C. A second thermal barrier can be formed by a layer arranged between the first electrode (12) and the reference layer (1). A write phase of the method comprises flow of an electric current (11), through the tunnel junction, from the storage layer (4) to the reference layer (1), whereas a read phase comprises flow of an electric current (I2) in the opposite direction.

摘要翻译： 该装置依次包括第一电极（12），磁参考层（1），隧道势垒（3），磁存储层（4）和第二电极（13）。 至少一个第一热障被布置在存储层（4）和第二电极（13）之间，并且由热导率低于5W / m℃的材料形成。第二热障可以通过 层，布置在第一电极（12）和参考层（1）之间。 该方法的写入阶段包括通过隧道结从存储层（4）到参考层（1）的电流（11）的流动，而读取阶段包括电流（I 2） 在相反的方向。

公开(公告)号：US07006337B2

公开(公告)日：2006-02-28

申请号：US11091282

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

公开(公告)号：US20050248888A1

公开(公告)日：2005-11-10

申请号：US11091623

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

摘要翻译： 提供基于纳米氧化物的电流 - 垂直平面（CPP）磁阻（MR）传感器堆叠，以及用于形成这种堆叠的方法。 相对于完全由金属层制成的CPP叠层，这种堆叠具有增加的电阻和增强的磁阻特性。 通过在铁磁层和非磁性间隔层之间插入磁性纳米氧化物层来提供所述增强的性质，由此所述纳米氧化物层增加电阻并显示自旋过滤性质。 提供了各种类型的CPP传感器堆叠，其中都具有形成在其中的纳米氧化物层，包括自旋阀型和合成反铁磁性钉扎层型旋转阀型。 所述堆叠也可以彼此形成以提供不同类型的叠层。

公开(公告)号：US06888703B2

公开(公告)日：2005-05-03

申请号：US09953539

申请日：2001-09-17

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

摘要翻译： 提供基于纳米氧化物的电流 - 垂直平面（CPP）磁阻（MR）传感器堆叠，以及用于形成这种堆叠的方法。 相对于完全由金属层制成的CPP叠层，这种堆叠具有增加的电阻和增强的磁阻特性。 通过在铁磁层和非磁性间隔层之间插入磁性纳米氧化物层来提供所述增强的性质，由此所述纳米氧化物层增加电阻并显示自旋过滤性质。 提供了各种类型的CPP传感器堆叠，其中都具有形成在其中的纳米氧化物层，包括自旋阀型和合成反铁磁性钉扎层型旋转阀型。 所述堆叠也可以彼此形成以提供不同类型的叠层。

公开(公告)号：US06770382B1

公开(公告)日：2004-08-03

申请号：US09443447

申请日：1999-11-22

申请人： Jei-Wei Chang ,  Bernard Dieny ,  Mao-Min Chen ,  Cheng Horng ,  Kochan Ju ,  Simon Liao

发明人： Jei-Wei Chang ,  Bernard Dieny ,  Mao-Min Chen ,  Cheng Horng ,  Kochan Ju ,  Simon Liao

IPC分类号： G11B5127

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/12944 ,  Y10T428/2495

摘要： A Spin Valve GMR and Spin Filter SVGMR configuration where in the first embodiment an important buffer layer is composed of an metal oxide having a crystal lattice constant that is close the 1st FM free layer's crystal lattice constant and has the same crystal structure (e.g., FCC, BCC, etc.). The metal oxide buffer layer enhances the specular scattering. The spin valve giant magnetoresistance (SVGMR) sensor comprises: a seed layer over the substrate. An important metal oxide buffer layer (buffer layer) over the seed layer. The metal oxide layer preferably is comprised of NiO or alpha-Fe2O3. A free ferromagnetic layer over the metal oxide layer. A non-magnetic conductor spacer layer over the free ferromagnetic layer. A pinned ferromagnetic layer (2nd FM pinned) over the non-magnetic conductor spacer layer and a pinning material layer over the pinned ferromagnetic layer. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter -SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment is a pinned FM layer comprised of a three layer structure of an lower AP layer, a spacer layer (e.g., Ru) and an upper AP layer.

摘要翻译： 自旋阀GMR和自旋滤波器SVGMR配置，其中在第一实施例中，重要的缓冲层由具有接近第1个FM自由层的晶格常数的晶格常数的金属氧化物组成并且具有相同的晶体结构 例如FCC，BCC等）。 金属氧化物缓冲层增强了镜面散射。 自旋阀巨磁阻（SVGMR）传感器包括：衬底上的种子层。 种子层上重要的金属氧化物缓冲层（缓冲层）。 金属氧化物层优选由NiO或α-Fe2O3组成。 在金属氧化物层上的自由铁磁层。 在自由铁磁层上的非磁性导体间隔层。 在非磁性导体间隔层上方的钉扎铁磁层（第二个FM被钉住）和钉扎铁磁层上的钉扎材料层。 在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-SVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。 第三实施例是由下AP层，间隔层（例如Ru）和上AP层组成的三层结构的钉扎FM层。

公开(公告)号：US06462641B1

公开(公告)日：2002-10-08

申请号：US09601722

申请日：2000-10-23

申请人： Bernard Dieny ,  Laurence Giacomoni ,  Anatoly Vedyaev

发明人： Bernard Dieny ,  Laurence Giacomoni ,  Anatoly Vedyaev

IPC分类号： H01L4300

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11B2005/3996

摘要： Tunnel effect magnetoresistance comprising, in the form of a stack: a first layer (12) of free magnetisation magnetic material, a “barrier” layer (16), composed of an electrically insulating material, and a second layer (14) of trapped magnetisation magnetic material, According to the invention, the thickness of the first layer (12) of magnetic material is less than 10 nm. The invention may be particularly applied to the manufacture of magnetic data read heads.

摘要翻译： 隧道效应磁阻包括以堆叠的形式：自由磁化磁性材料的第一层（12），由电绝缘材料构成的“阻挡”层（16）和被俘获的磁化磁体的第二层（14） 材料根据本发明，磁性材料的第一层（12）的厚度小于10nm。本发明可以特别地应用于磁数据读取头的制造。

公开(公告)号：US5677625A

公开(公告)日：1997-10-14

申请号：US589844

申请日：1996-01-22

申请人： Bernard Dieny

发明人： Bernard Dieny

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/32 ,  H01L43/08

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  H01F10/3268 ,  H01L43/08 ,  Y10T428/1121

摘要： A magnetoresistance having three ferromagnetic layers (10, 20, 30) separated by non-magnetic layers (15, 25). The first ferromagnetic layer (10) has a magnetization orientable by a measuring current, the second layer (20) has a "free" magnetization and the third ferromagnetic layer (50) has a trapped or fixed magnetization.

摘要翻译： 具有由非磁性层（15,25）分开的三个铁磁层（10,20,30）的磁阻。 第一铁磁层（10）具有可由测量电流定向的磁化，第二层（20）具有“自由”磁化，第三铁磁层（50）具有被捕获或固定的磁化。

公开(公告)号：US5206590A

公开(公告)日：1993-04-27

申请号：US625343

申请日：1990-12-11

申请人： Bernard Dieny ,  Bruce A. Gurney ,  Steven E. Lambert ,  Daniele Mauri ,  Stuart S. P. Parkin ,  Virgil S. Speriosu ,  Dennis R. Wilhoit

发明人： Bernard Dieny ,  Bruce A. Gurney ,  Steven E. Lambert ,  Daniele Mauri ,  Stuart S. P. Parkin ,  Virgil S. Speriosu ,  Dennis R. Wilhoit

IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G01R33/096 ,  G11B5/3903 ,  G11B2005/0018 ,  G11B2005/3996

摘要： A magnetoresistive (MR) sensor comprising a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.

公开(公告)号：US5159513A

公开(公告)日：1992-10-27

申请号：US652852

申请日：1991-02-08

申请人： Bernard Dieny ,  Bruce A. Gurney ,  Serhat Metin ,  Stuart S. P. Parkin ,  Virgil S. Speriosu

发明人： Bernard Dieny ,  Bruce A. Gurney ,  Serhat Metin ,  Stuart S. P. Parkin ,  Virgil S. Speriosu

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/16 ,  H01F10/32 ,  H01L43/10

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/3268 ,  H01F10/3281 ,  H01L43/10 ,  G11B2005/3996

摘要： A magnetoresistive (MR) sensor comprising a layered structure formed on a substrate includes a first and a second thin film layer of magnetic material separated by a thin film layer of non-magnetic metallic material such as Cu, Au, or Ag, with at least one of the layers of ferromagnetic material formed of either cobalt or a cobalt alloy. The magnetization direction of the first ferromagnetic layer, at zero applied field, is set substantially perpendicular to the magnetization direction of the second ferromagnetic layer which is fixed in position. A current flow is produced through the sensor, and the variations in voltage across the MR sensor are sensed due to the changes in resistance produced by rotation of the magnetization in the front layer of ferromagnetic material as a function of the magnetic field being sensed.