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公开(公告)号：US10851474B2
公开(公告)日：2020-12-01
申请号：US16714939
申请日：2019-12-16
申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
IPC分类号： H01L21/00 , C30B29/40 , C30B23/06 , H01L33/00 , C30B23/00 , H01S5/30 , H01S5/343 , H01S5/02 , H01L21/02
摘要： In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
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82.发明授权公开(公告)号：US10777706B2
公开(公告)日：2020-09-15
申请号：US16161320
申请日：2018-10-16
申请人： Ken Kitamura , Jianfeng Chen , Leo J. Schowalter
发明人： Ken Kitamura , Jianfeng Chen , Leo J. Schowalter
摘要： In various embodiments, an electrochemical process is utilized to remove at least a portion of a substrate from multiple singulated or unsingulated electronic-device or optoelectronic-device dies. The dies may be attached to a submount for the removal process, and the dies may be immersed in or non-immersively contact an electrolyte during the removal process.
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公开(公告)号：US10550493B2
公开(公告)日：2020-02-04
申请号：US16185832
申请日：2018-11-09
申请人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
发明人： Robert T. Bondokov , Jianfeng Chen , Keisuke Yamaoka , Shichao Wang , Shailaja P. Rao , Takashi Suzuki , Leo J. Schowalter
摘要： In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.
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公开(公告)号：US10125432B2
公开(公告)日：2018-11-13
申请号：US15463536
申请日：2017-03-20
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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公开(公告)号：US20170084702A1
公开(公告)日：2017-03-23
申请号：US15348507
申请日：2016-11-10
申请人： Glen A. Slack , Leo J. Schowalter
发明人： Glen A. Slack , Leo J. Schowalter
IPC分类号： H01L29/207 , H01L21/02 , H01L21/225 , H01L29/20
CPC分类号： H01L29/207 , C30B23/00 , C30B29/403 , H01L21/0254 , H01L21/02579 , H01L21/2258 , H01L29/2003 , H01L33/325
摘要： Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
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公开(公告)号：US20150275393A1
公开(公告)日：2015-10-01
申请号：US14684754
申请日：2015-04-13
申请人： Robert T. Bondokov , Leo J. Schowalter , Kenneth Morgan , Glen A. Slack , Shailaja P. Rao , Shawn Robert Gibb
发明人： Robert T. Bondokov , Leo J. Schowalter , Kenneth Morgan , Glen A. Slack , Shailaja P. Rao , Shawn Robert Gibb
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
摘要翻译： 具有面状平面缺陷密度的纳米氮化铝的单晶（AlN）为100cm-2。 用于生长单晶氮化铝的方法包括熔融铝箔以均匀地湿一层铝基，该基底形成AlN种子保持器的一部分，用于AlN种子用于AlN生长。 保持器可以基本上由基本上不可渗透的背板组成。
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87.发明授权Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them 有权对紫外线具有高透明度的氮化铝本体晶体及其形成方法公开(公告)号：US09034103B2
公开(公告)日：2015-05-19
申请号：US12827507
申请日：2010-06-30
申请人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
发明人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
CPC分类号： C30B23/066 , C30B23/00 , C30B23/002 , C30B23/02 , C30B29/403 , C30B33/02 , C30B35/00 , H01L21/02389 , Y10T428/2982
摘要： In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
摘要翻译： 在各种实施方案中，形成单晶AlN的方法包括提供氧浓度小于约100ppm的基本上未掺杂的多晶AlN陶瓷，通过升华 - 重新缩合工艺在大于约2000℃的温度下形成单晶体AlN晶体 ℃，并以大约250℃/小时的第一速率将本体AlN晶体冷却至约1500℃至约1800℃的第一温度。
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公开(公告)号：US20150020731A1
公开(公告)日：2015-01-22
申请号：US14458861
申请日：2014-08-13
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , H01L21/02389 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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89.发明授权Large aluminum nitride crystals with reduced defects and methods of making them 有权具有减少缺陷的大型氮化铝晶体和制造它们的方法公开(公告)号：US08349077B2
公开(公告)日：2013-01-08
申请号：US11605192
申请日：2006-11-28
IPC分类号： C30B23/00
CPC分类号： C30B33/02 , B28D5/00 , C23C16/34 , C30B23/00 , C30B23/02 , C30B25/02 , C30B25/08 , C30B25/10 , C30B25/18 , C30B29/403 , H01L21/0201 , H01L21/02389 , H01L21/0254 , H01L21/30625 , Y10T428/21
摘要： Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm−2 and an inclusion density below 104 cm−3 and/or a MV density below 104 cm−3.
摘要翻译： 降低AlN中的微孔（MV）密度改善了与晶体生长期间的开裂有关的许多问题，抛光期间的蚀刻坑产生，AlN晶片中的光学透明度的降低以及可能的AlN的外延生长期间的生长凹坑形成和/ 或AlGaN。 这有助于实际的晶体生产策略和形成具有低缺陷密度（例如，位错密度低于104cm -2）和包含密度低于104cm -3和/或低于104cm -3的MV密度的大体积AlN晶体 。
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公开(公告)号：US08323406B2
公开(公告)日：2012-12-04
申请号：US12015957
申请日：2008-01-17
IPC分类号： C30B25/14
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , H01L21/02389 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an a real planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
摘要翻译： 具有实际平面缺陷密度＆nlE; 100cm-2的氮化铝（AlN）的单体单晶。 用于生长单晶氮化铝的方法包括熔融铝箔以均匀地湿一层铝基，该基底形成AlN种子保持器的一部分，用于AlN种子用于AlN生长。 保持器可以基本上由基本上不可渗透的背板组成。
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