摘要:
A solid state image pickup device having a matrix array of resolution cells from which the charges are successively transferred to produce a video signal is provided with means for holding the charges for the two resolution cells adjacent to each other in a direction corresponding to the vertical scanning line for the television signal to permit the charges from the aforesaid adjacent resolution cells to be interrelated with each other. In this manner the resolving power in the vertical direction is improved.
摘要:
A test piece is immersed in an electroless plating bath. It is then electrically charged instantaneously via a counter electrode to have a polarization potential .eta.(t) of a few millivolts. The charge consumed by the electroless plating reaction of the test piece is measured by a potential recorder in the form of a variation of the polarization potential .eta.(t) with respect to time t. The .eta.(t)-t relation is analyzed to obtain a resistance R of the test piece. After the potential of the test piece has returns to electroless deposition potential E.sub.ELP, the test piece is charged again until its polarization potential .eta.(t) rises to 50 millivolts or more. A .eta.(t)-t relation is obtained. Based on the .eta.(t)-t relation, a Tafel slope .beta..sub.a of anodic reaction is obtained. After the potential of the test piece has returned to electroless deposition potential E.sub.ELP, the test piece is so charged for the third time as to have its polarization potential .eta.(t) lowered to -50 millivolts or less, and a .eta.(t)-t relation is obtained. This relation is analyzed to obtain a Tafel slope .beta..sub.c of anodic reaction of the test piece. Based on the reaction resistance R, Tafel slopes .beta..sub.a and .beta..sub.c, an electroless plating current density I.sub.ELP is obtained. Based on the electroless plating current density I.sub.ELP, a rate of electroless plating V.sub.ELP is calculated.
摘要:
An electronically controlled self-timer for a camera includes a self-timer operating member in the form of a plate having an increased size which is displaceably disposed in the bottom surface or in one lateral side of camera body. When it is displaced to enable a self-timer operation, it extends in the same plane as the bottom surface of the camera body to provide an additional support to the camera, while permitting an indication of the fact that the self-timer operation is enabled, at one glance.
摘要:
A polylactic acid resin composition includes a polylactic acid resin in an amount of 99% by mass or more. A complex viscosity η*(20) of the polylactic acid resin composition is 2×103 Pa·s or higher. A ratio of the complex viscosity η*(20) to a complex viscosity η*(5), which is represented by [η*(20)/η*(5)], is 0.6 or higher. The complex viscosity η*(5) and the complex viscosity η*(20) are complex viscosities respectively measured 5 minutes and 20 minutes after the start of measurement using a parallel plate-type rotary viscometer under measurement conditions below: [Measurement Conditions]
Parallel plates: 20 mm in diameter, made of aluminum; Temperature: 200° C.; Gap between the parallel plates: 1.00 mm; Frequency: 1 Hz (6.28 rad/s); Atmosphere: under dry air (dew point: −60° C.); and Size of measurement sample: a strip that is 30 μm thick, 7 mm wide, and 35 mm long.
摘要:
A method of controlling air conditioning to cool servers, the method includes selecting, when the number of operating servers is a certain threshold number or more, a first mode, in which the pressure of a cold aisle is set higher than the pressure of a hot aisle; selecting, when the number of operating servers is less than the certain threshold number, a second mode, in which the pressure of the cold aisle is set equal to the pressure of the hot aisle; and informing the operating servers of whether a current mode is the first mode or the second mode, and when the current mode is the first mode, driving fans of the servers at a minimum rotational speed in a specification, and when the current mode is the second mode, driving the fans of the servers at a rotational speed higher than the minimum rotational speed in the specification.
摘要:
A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction.
摘要:
A prior simulation of a velocity field and a temperature field is carried out, and snapshot data of the velocity field and that of the temperature field are collected during the prior simulation. Then principal component analysis on the collected snapshot data obtains velocity-field and temperature field dimension transformation matrixes, on the based on which the analysis models of the velocity field and temperature field having respective first degrees of freedom are converted into reduced degree-of-freedom models. Consequently, a simulation of the velocity field and the temperature field is carried out using models having respective reduced degrees of freedom (i.e., second degrees of freedom).
摘要:
The present invention provides an alkali metal salt of fluorosulfonyl imide having favorable heat resistance and a reduced content of specific impurities and a water content, and provides a method for producing an alkali metal salt of fluorosulfonyl imide, which is capable of easily removing a solvent from a reaction solution. An alkali metal salt of fluorosulfonyl imide of the present invention is represented by the following general formula (I) and has a mass loss rate of 2% or less when the alkali metal salt of fluorosulfonyl imide is kept at 100° C. for 8 hours under an air current. A method for producing an alkali metal salt of fluorosulfonyl imide of the present invention comprises a step of concentrating a solution of the alkali metal salt of fluorosulfonyl imide by bubbling a gas into a reaction solution containing the alkali metal salt of fluorosulfonyl imide, and/or concentrating a solution of the alkali metal salt of fluorosulfonyl imide by thin layer distillation.
摘要:
A semiconductor device which includes an oxide semiconductor and has favorable electrical characteristics is provided. In the semiconductor device, an oxide semiconductor film and an insulating film are formed over a substrate. Side surfaces of the oxide semiconductor film are in contact with the insulating film. The oxide semiconductor film includes a channel formation region and regions containing a dopant between which the channel formation region is sandwiched. A gate insulating film is formed on and in contact with the oxide semiconductor film. A gate electrode with sidewall insulating films is formed over the gate insulating film. A source electrode and a drain electrode are formed in contact with the oxide semiconductor film and the insulating film.
摘要:
A data transfer device and method include obtaining a compression ratio and a compression speed of data for each of a plurality of compression levels, obtaining a compression ratio of data for each of the compression levels, adding a predicted time required for the compression and a predicted time required for the transfer of the data for each of the compression levels to determine a compression level for which the added predicted time is shortest, compressing the data to be transferred at the determined compression level and transferring the compressed to a transfer destination.