公开(公告)号：US20120009771A1

公开(公告)日：2012-01-12

申请号：US12833272

申请日：2010-07-09

申请人： Cyril Cabral, JR. ,  John M. Cotte ,  Dinesh R. Koli ,  Laura L. Kosbar ,  Mahadevaiyer Krishnan ,  Christian Lavoie ,  Stephen M. Rossnagel ,  Zhen Zhang

发明人： Cyril Cabral, JR. ,  John M. Cotte ,  Dinesh R. Koli ,  Laura L. Kosbar ,  Mahadevaiyer Krishnan ,  Christian Lavoie ,  Stephen M. Rossnagel ,  Zhen Zhang

IPC分类号： H01L21/3205

CPC分类号： H01L21/28512 ,  H01L21/28518 ,  H01L29/456

摘要： A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer.

摘要翻译： 在半导体材料和硅化物层之间的结处形成分离的界面掺杂剂层的方法包括在半导体材料上沉积掺杂的金属层; 退火所述掺杂金属层和所述半导体材料，其中所述退火使所述掺杂金属层的一部分和所述半导体材料的一部分反应以在所述半导体材料上形成所述硅化物层，并且其中所述退火还导致所述分离的界面掺杂剂 层，以形成在半导体材料和硅化物层之间，分离的界面掺杂剂层包含来自掺杂金属层的掺杂剂; 以及从所述硅化物层去除所述掺杂金属层的未反应部分。

公开(公告)号：US20110193045A1

公开(公告)日：2011-08-11

申请号：US12702406

申请日：2010-02-09

申请人： Alejandro G. Schrott ,  Chung H. Lam ,  Stephen M. Rossnagel

发明人： Alejandro G. Schrott ,  Chung H. Lam ,  Stephen M. Rossnagel

IPC分类号： H01L45/00 ,  H01L21/20 ,  H01L29/00

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1641 ,  H01L45/1683

摘要： Techniques for forming a phase change memory cell. An example method includes forming a bottom electrode within a substrate. The method includes forming a phase change layer above the bottom electrode. The method includes forming a capping layer and an insulator layer. The method includes crystallizing the phase change material in the phase change layer so that the phase change layer is void free. The method further comprises heating the phase change material in the phase change layer from the bottom electrode and as a result the phase change layer is crystallized from the bottom to the top. In one embodiment, a rapid thermal anneal (RTA) is applied for crystallizing the phase change material.

摘要翻译： 形成相变存储单元的技术。 一种示例性方法包括在衬底内形成底部电极。 该方法包括在底部电极上形成相变层。 该方法包括形成覆盖层和绝缘体层。 该方法包括使相变层中的相变材料结晶，使得相变层无空隙。 该方法还包括从底部电极加热相变层中的相变材料，结果相变层从底部到顶部结晶。 在一个实施例中，应用快速热退火（RTA）以使相变材料结晶。

公开(公告)号：US20110188172A1

公开(公告)日：2011-08-04

申请号：US12699411

申请日：2010-02-03

申请人： Richard A. Haight ,  Stephen M. Rossnagel

发明人： Richard A. Haight ,  Stephen M. Rossnagel

IPC分类号： H01G9/00

CPC分类号： H01G9/145 ,  B82Y99/00 ,  H01G9/004 ,  H01G9/155 ,  Y02E60/13

摘要： A capacitor includes a plurality of nanochannels formed in a dielectric material. A conductive film is formed over interior surfaces of the nanochannels, and a charge barrier is formed over the conductive film. An electrolytic solution is disposed in the nanochannels. An electrode is coupled to the electrolytic solution in the nanochannels to form the capacitor.

摘要翻译： 电容器包括形成在电介质材料中的多个纳米通道。 在纳米通道的内表面上形成导电膜，并且在导电膜上形成电荷势垒。 在纳米通道中设置电解液。 电极与纳米通道中的电解液结合形成电容器。

公开(公告)号：US07960808B2

公开(公告)日：2011-06-14

申请号：US11844109

申请日：2007-08-23

申请人： Geoffrey W. Burr ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Xiao Hu Liu ,  Stephen M. Rossnagel ,  Christy S. Tyberg ,  Robert L. Wisnieff

发明人： Geoffrey W. Burr ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Xiao Hu Liu ,  Stephen M. Rossnagel ,  Christy S. Tyberg ,  Robert L. Wisnieff

IPC分类号： H01L29/00

CPC分类号： H01L23/5256 ,  H01L23/5252 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A reversible fuse structure in an integrated circuit is obtained through the implementation of a fuse cell having a short thin line of phase change materials in contact with via and line structures capable of passing current through the line of phase change material (fuse cell). The current is passed through the fuse cell in order to change the material from a less resistive material to a more resistive material through heating the phase change material in the crystalline state to the melting point then quickly quenching the material into the amorphous state. The reversible programming is achieved by passing a lower current through the fuse cell to convert the high resistivity amorphous material to a lower resistivity crystalline material. Appropriate sense-circuitry is integrated to read the information stored in the fuses, wherein said sense circuitry is used to enable or disable circuitry.

摘要翻译： 集成电路中的可逆熔丝结构通过实现具有短路相变材料的熔断电池获得，所述相变材料与能够使电流通过相变材料线（熔丝电池）的通孔和线结构相接触。 电流通过熔丝电池，以便通过将结晶状态的相变材料加热至熔点，从而将材料从较小电阻的材料转变为更电阻的材料，然后快速将材料淬火成非晶状态。 可逆编程通过使较低电流通过熔丝电池来实现，以将高电阻率无定形材料转换成较低电阻率的晶体材料。 集成适当的感测电路以读取存储在熔丝中的信息，其中所述感测电路用于启用或禁用电路。

公开(公告)号：US20100264396A1

公开(公告)日：2010-10-21

申请号：US12426809

申请日：2009-04-20

申请人： Hsiang-Lan Lung ,  Shih-Hung Chen ,  Stephen M. Rossnagel

发明人： Hsiang-Lan Lung ,  Shih-Hung Chen ,  Stephen M. Rossnagel

IPC分类号： H01L47/00 ,  H01L21/283

CPC分类号： H01L45/142 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1675

摘要： An electrode structure and a method for manufacturing an integrated circuit electrode includes forming a bottom electrode comprising a pipe-shaped member, filled with a conductive material such as n-doped silicon, and having a ring-shaped top surface. A disc-shaped insulating member is formed on the top of the pipe-shaped member by oxidizing the conductive fill. A layer of programmable resistance material, such as a phase change material, is deposited in contact with the top surface of the pipe-shaped member. A top electrode in contact with the layer of programmable resistance material.

摘要翻译： 电极结构和集成电路电极的制造方法包括形成包含管状部件的底部电极，该管状部件填充有诸如n掺杂硅的导电材料，并具有环形顶表面。 通过氧化导电填料，在管状构件的顶部上形成圆盘形的绝缘构件。 将一层可编程电阻材料（例如相变材料）沉积成与管状构件的顶表面接触。 与可编程电阻材料层接触的顶部电极。

公开(公告)号：US20080217700A1

公开(公告)日：2008-09-11

申请号：US11684619

申请日：2007-03-11

申请人： Bruce B. Doris ,  Cyril Cabral ,  Elizabeth A. Duch ,  Stephen M. Rossnagel ,  Michelle L. Steen

发明人： Bruce B. Doris ,  Cyril Cabral ,  Elizabeth A. Duch ,  Stephen M. Rossnagel ,  Michelle L. Steen

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L21/823807 ,  H01L21/823842 ,  H01L29/4958 ,  H01L29/7845

摘要： NFET and PFET devices with separately stressed channel regions, and methods of their fabrication is disclosed. A FET is disclosed which includes a gate, which gate includes a metal in a first state of stress. The FET also includes a channel region hosted in a single crystal Si based material, which channel region is overlaid by the gate and is in a second state of stress. The second state of stress of the channel region is of an opposite sign than the first state of stress of the metal included in the gate. The NFET channel is usually in a tensile state of stress, while the PFET channel is usually in a compressive state of stress. The methods of fabrication include the deposition of metal layers by physical vapor deposition (PVD), in such manner that the layers are in stressed states.

摘要翻译： 具有单独应力通道区域的NFET和PFET器件及其制造方法。 公开了一种FET，其包括栅极，该栅极包括处于第一应力状态的金属。 FET还包括托管在单晶Si基材料中的沟道区域，该沟道区域被栅极覆盖并处于第二应力状态。 沟道区域的第二应力状态与包括在栅极中的金属的第一应力状态相反。 NFET通道通常处于应力的拉伸状态，而PFET通道通常处于应力的压缩状态。 制造方法包括通过物理气相沉积（PVD）沉积金属层，使得层处于应力状态。

公开(公告)号：US06210545B1

公开(公告)日：2001-04-03

申请号：US09447626

申请日：1999-11-23

申请人： Mukta Farooq ,  Robert A. Rita ,  Stephen M. Rossnagel

发明人： Mukta Farooq ,  Robert A. Rita ,  Stephen M. Rossnagel

IPC分类号： C23C1434

CPC分类号： C23C14/3414 ,  C04B35/462 ,  C04B35/49 ,  C04B35/645 ,  C23C14/088

摘要： An inventive method for forming a thin film comprises the steps of preparing a sputter-target of a material which is fully oxidized and crystallized to a perovskite structure, sputter-depositing a thin film on top of a sample with the target in an inert gas atmosphere, and annealing the thin film in non-oxygen ambient. With the use of such a target, it is possible to reduce the negative ion effect during the sputter deposition and to eliminate the presence of oxygen during the annealing process.

摘要翻译： 用于形成薄膜的本发明的方法包括以下步骤：制备完全氧化并结晶成钙钛矿结构的材料的溅射靶，在惰性气体气氛中用靶溅射沉积样品顶部的薄膜 ，并在非氧环境中退火薄膜。 通过使用这样的靶，可以减少在溅射沉积期间的负离子效应，并且消除退火过程中氧的存在。

公开(公告)号：US4633129A

公开(公告)日：1986-12-30

申请号：US729028

申请日：1985-04-30

申请人： Jerome J. Cuomo ,  Harold R. Kaufman ,  Stephen M. Rossnagel

发明人： Jerome J. Cuomo ,  Harold R. Kaufman ,  Stephen M. Rossnagel

IPC分类号： H01J37/077 ,  H01J1/02 ,  H01J43/08

CPC分类号： H01J1/025

摘要： A long life high current density hollow cathode electron beam source for use in various E-beam apparatus which uses an ionizable gas within the hollow cathode. Bombardment of an electron emissive surface within the hollow cathode by energetic gas ions causes electrons to be emitted by secondary emission rather than thermionic emission effects. Once initialized by an external ionization voltage the device is essentially self sustaining and operates near room temperature, rather than at thermionic emission temperatures, and with reduced voltages.

摘要翻译： 一种长寿命的高电流密度中空阴极电子束源，用于各种电子束装置，其使用空心阴极内的可电离气体。 通过能量气体离子轰击空心阴极内的电子发射表面，可以通过二次发射而不是热离子发射效应来发射电子。 一旦通过外部电离电压初始化，器件基本上是自我维持的，并且在室温附近操作，而不是在热离子发射温度下并且具有降低的电压。