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公开(公告)号：US20210118693A1
公开(公告)日：2021-04-22
申请号：US16658620
申请日：2019-10-21
IPC分类号： H01L21/3213 , H01L21/02 , H01L21/768 , H01L21/67
摘要： A method of plasma processing that includes maintaining a plasma processing chamber between 10° C. to 200° C., flowing oxygen and nitrogen into the plasma processing chamber, where a ratio of a flow rate of the nitrogen to a flow rate of oxygen is between about 1:5 and about 1:1, and etching a ruthenium/osmium layer by sustaining a plasma in the plasma processing chamber.
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公开(公告)号：US20210066581A1
公开(公告)日：2021-03-04
申请号：US16555527
申请日：2019-08-29
摘要： A dielectric material structure is formed laterally adjacent to a bottom portion of a bottom electrode metal-containing portion that extends upward from an electrically conductive structure that is embedded in an interconnect dielectric material layer. The physically exposed top portion of the bottom electrode metal-containing portion is then trimmed to provide a bottom electrode of unitary construction (i.e., a single piece) that has a lower portion having a first diameter and an upper portion that has a second diameter that is greater than the first diameter. The presence of the dielectric material structure prevents tilting and/or bowing of the resultant bottom electrode. Thus, a stable bottom electrode is provided.
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公开(公告)号：US10937945B2
公开(公告)日：2021-03-02
申请号：US16254021
申请日：2019-01-22
发明人： Nathan P. Marchack , Bruce B. Doris
摘要： A magnetic tunnel junction (MTJ) containing device is provided that includes an undercut conductive pedestal structure having a concave sidewall positioned between a bottom electrode and a MTJ pillar. The geometric nature of such a conductive pedestal structure makes the pedestal structure unlikely to be resputtered and deposited on a sidewall of the MTJ pillar, especially the sidewall of the tunnel barrier of the MTJ pillar. Thus, electrical shorts caused by depositing resputtered conductive metal particles on the sidewall of the tunnel barrier of the MTJ pillar are substantially reduced.
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公开(公告)号：US20200299832A1
公开(公告)日：2020-09-24
申请号：US16362128
申请日：2019-03-22
发明人： Steven J. Holmes , Deborah A. Neumayer , Stephen Bedell , Devendra K. Sadana , Damon Farmer , Nathan P. Marchack
摘要： A method of fabricating a glassy carbon film is described. The method includes forming a soluble layer on a substrate, forming a lift-off stack that includes a lift-off mask layer and a hard-mask layer, and forming a pattern in the lift-off stack to expose a portion of the soluble layer. The exposed portions of the soluble layer are removed to expose a portion of the substrate. A carbon material is over the exposed portion of the substrate. The soluble layer is dissolved in a solvent, and the lift-off stack is lifted-off.
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公开(公告)号：US10777735B2
公开(公告)日：2020-09-15
申请号：US16683609
申请日：2019-11-14
发明人： Chih-Chao Yang , Daniel C. Edelstein , Bruce B. Doris , Henry K. Utomo , Theodorus E. Standaert , Nathan P. Marchack
IPC分类号： H01L43/02 , H01L43/12 , H01L27/22 , H01L21/768 , H01L21/311 , H01L21/027
摘要： Back end of line (BEOL) metallization structures and methods generally includes forming a landing pad on an interconnect structure. A multilayer structure including layers of metals and at least one insulating layer are provided on the structure and completely cover the landing pad. The landing pad is a metal-filled via and has a width dimension that is smaller than the multilayer structure, or the multilayer structure and the underlying metal conductor in the interconnect structure. The landing pad metal-filled via can have a width dimension that is sub-lithographic.
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公开(公告)号：US10770652B2
公开(公告)日：2020-09-08
申请号：US16238846
申请日：2019-01-03
摘要： A semiconductor structure and fabrication method of forming a semiconductor structure. The method first provides an electrically conductive structure embedded in an interconnect dielectric material layer of a magnetoresistive random access memory device. A conductive landing pad is located on a surface of the electrically conductive structure. A multilayered magnetic tunnel junction (MTJ) structure and an MTJ cap layer is formed on the landing pad. Then there is formed a first conductive layer on top the MTJ cap layer and a second conductive metal layer formed on top the first conductive layer. A pillar mask structure is then patterned and formed on the second conductive layer. The resulting structure is subject to lithographic patterning and etching to form a patterned bilayer metal hardmask pillar structure on top the MTJ cap layer. Subsequent etch processing forms an MTJ stack having sidewalls aligned to the patterned bilayer metal hardmask pillar.
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公开(公告)号：US20200243756A1
公开(公告)日：2020-07-30
申请号：US16256452
申请日：2019-01-24
摘要： A magnetic tunnel junction (MTJ) containing device is provided in which a conformal dielectric encapsulation liner is located on a sidewall of each of a MTJ pillar and an overlying top electrode, and a non-conformal dielectric encapsulation liner is located on the conformal dielectric encapsulation liner. This dual encapsulation liner structure prevents the bottom electrode of the MTJ containing device from being physically exposed thus eliminating the possibility that the bottom electrode can be a source of resputtered conductive metal particles that can deposit on a sidewall of the MTJ pillar. As such, electrical shorting is reduced in the MTJ containing device of the present application. Also, the dual encapsulation liner structure can mitigate chemical diffusion into the tunnel barrier material of the MTJ pillar.
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公开(公告)号：US20200243750A1
公开(公告)日：2020-07-30
申请号：US16262437
申请日：2019-01-30
摘要： A magnetic tunnel junction (MTJ) containing device is provided in which a bottom electrode having a small CD is formed and is located laterally adjacent to diamond like carbon (DLC). DLC replaces a material stack of, from bottom to top, a silicon nitride layer and an organic planarization layer (OPL) which is typically used in providing a conductive structure having a reduced CD. DLC provides a higher etch resistance to IBE than silicon nitride, but DLC can be patterned using conventional etchants. The use of DLC thus reduces the number of processing steps for providing a reduced CD bottom electrode, and also provides a more robust solution to the issue of punch through to an underlying conductive material layer.
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公开(公告)号：US10593870B2
公开(公告)日：2020-03-17
申请号：US15841872
申请日：2017-12-14
IPC分类号： H01L21/3213 , H01L43/12 , H01L43/08 , G11C11/16 , H01L43/02 , H01L43/10 , H01L27/22 , H01L21/28 , H01L21/033
摘要： A method of forming a semiconductor structure includes forming a first spacer material over two or more mandrels disposed over a magnetoresistive random-access memory (MRAM) stack. The method also includes performing a first sidewall image transfer of the two or more mandrels to form a first set of fins of the first spacer material over the MRAM stack, and performing a second sidewall image transfer to form a plurality of pillars of the first spacer material over the MRAM stack. The pillars of the first spacer material form top electrodes for a plurality of MRAM cells patterned from the MRAM stack.
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公开(公告)号：US20200009368A1
公开(公告)日：2020-01-09
申请号：US16573533
申请日：2019-09-17
摘要： A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.
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