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1520 条记录 (耗时 0.055 秒)

    Power storage device and mobile electronic device having the same
    81.
    发明授权
    Power storage device and mobile electronic device having the same 有权
    蓄电装置及具有该蓄电装置的移动电子装置

    公开(公告)号：US08132026B2

    公开(公告)日：2012-03-06

    申请号：US11802826

    申请日：2007-05-25

    申请人： Jun Koyama

    发明人： Jun Koyama

    IPC分类号： G05F1/00

    CPC分类号： H02J7/025 ,  H02J7/0052 ,  H02J17/00 ,  H02J50/12

    摘要： To provide a power storage device for regularly supplying power to a mobile electronic device, in which charging of a battery by a power feeder can be simplified and even when power stored in the battery is not enough, power can be regularly supplied to the mobile electronic device. The mobile electronic device includes an antenna circuit which receives power supply via radio signals, a battery which stores power, and a power supply control circuit which includes a switch circuit for intermittently supplying power to a load. Power supply to the load is intermittently controlled by controlling the switch circuit, which is provided in the power supply control circuit for controlling the supply of power stored in the battery, using a signal from a low-frequency-signal generating circuit.

    摘要翻译： 为了提供一种用于定期向移动电子设备供电的电力存储装置，其中可以简化由馈电器对电池进行充电，并且即使当存储在电池中的电力不够时，可以定期向移动电子提供电力 设备。 移动电子设备包括通过无线电信号接收电源的天线电路，存储电力的电池以及包括用于向负载间歇地供电的开关电路的电源控制电路。 通过使用来自低频信号发生电路的信号控制用于控制存储在电池中的电力供应的电源控制电路中的开关电路来间歇地控制对负载的电力供应。

    Semiconductor device and method for fabricating the same
    82.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08129721B2

    公开(公告)日：2012-03-06

    申请号：US11396436

    申请日：2006-04-03

    申请人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

    发明人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

    IPC分类号： H01L29/04

    CPC分类号： G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78684

    摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

    摘要翻译： 本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅极电极和栅极布线，其中为了实现该目的，本发明的结构是在同一基板上具有像素TFT 设置在显示区域和设置在显示区域周围的驱动电路TFT，其中像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过与形成的栅极布线的连接器电接触 并且连接器设置在像素TFT和驱动电路TFT的沟道形成区域的外侧。

    Protection circuit and photoelectric conversion device
    84.
    发明授权
    Protection circuit and photoelectric conversion device 有权
    保护电路和光电转换装置

    公开(公告)号：US08115160B2

    公开(公告)日：2012-02-14

    申请号：US12398465

    申请日：2009-03-05

    申请人： Jun Koyama ,  Yoshifumi Tanada ,  Hideaki Shishido

    发明人： Jun Koyama ,  Yoshifumi Tanada ,  Hideaki Shishido

    IPC分类号： H03K17/78 ,  H01J40/14 ,  H02H9/00

    CPC分类号： H02H9/04 ,  H02H7/20 ,  Y02E10/56

    摘要： A protection circuit and a photoelectric conversion device are provided, each of which includes a first wiring, a second wiring, a first switch, a second switch, a capacitor, and a comparing circuit configured to generate a signal corresponding to a potential of the first wiring and a potential of the second wiring, and supply the signal to the first switch and the second switch. The first wiring is electrically connected to a first terminal of the first switch, and the second wiring is electrically connected to a first terminal of the second switch. A second terminal of the first switch is electrically connected to a first electrode of the capacitor, and a second terminal of the second switch is electrically connected to a second electrode of the capacitor.

    摘要翻译： 提供一种保护电路和光电转换装置，每个保护电路和光电转换装置包括第一布线，第二布线，第一开关，第二开关，电容器和比较电路，其被配置为产生对应于第一布线 布线和第二布线的电位，并将信号提供给第一开关和第二开关。 第一布线电连接到第一开关的第一端子，第二布线电连接到第二开关的第一端子。 第一开关的第二端子电连接到电容器的第一电极，并且第二开关的第二端子电连接到电容器的第二电极。

    OPTICAL SENSOR DEVICE AND ELECTRONIC APPARATUS
    85.
    发明申请
    OPTICAL SENSOR DEVICE AND ELECTRONIC APPARATUS 有权
    光学传感器和电子设备

    公开(公告)号：US20120025064A1

    公开(公告)日：2012-02-02

    申请号：US13271300

    申请日：2011-10-12

    申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

    发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

    IPC分类号： H01J40/14

    CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

    摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can also be reduced.

    摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。

    Light Emitting Device and Method of Manufacturing the Same
    86.
    发明申请
    Light Emitting Device and Method of Manufacturing the Same 有权
    发光装置及其制造方法

    公开(公告)号：US20110315993A1

    公开(公告)日：2011-12-29

    申请号：US13224363

    申请日：2011-09-02

    申请人： Shunpei Yamazaki ,  Jun Koyama ,  Mai Osada

    发明人： Shunpei Yamazaki ,  Jun Koyama ,  Mai Osada

    IPC分类号： H01L33/40

    CPC分类号： H01L27/3279 ,  H01L27/1214 ,  H01L27/3223 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/56 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

    摘要： There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.

    摘要翻译： 提供了即使在大屏幕的情况下也能够实现低功耗的发光装置。 像素部分中的源极信号线或电源线的表面被电镀以减小布线的电阻。 像素部中的源极信号线通过与驱动电路部的源极信号线不同的步骤来制造。 像素部分中的电源线通过与在基板上引导的电源线不同的步骤来制造。 类似地，端子被电镀以实现电阻降低。 期望电镀前的布线由与栅电极相同的材料制成，并且布线的表面被电镀以形成源极信号线或电源线。

    Semiconductor device and method for fabricating the same
    87.
    发明授权
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08071981B2

    公开(公告)日：2011-12-06

    申请号：US12839113

    申请日：2010-07-19

    申请人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

    发明人： Shunpei Yamazaki ,  Jun Koyama ,  Toru Takayama ,  Toshiji Hamatani

    IPC分类号： H01L29/24

    CPC分类号： G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78684

    摘要： The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

    摘要翻译： 本发明主要提供允许用于有源矩阵型显示装置的大尺寸屏幕的栅极电极和栅极布线，其中为了实现该目的，本发明的结构是在同一基板上具有像素TFT 设置在显示区域和设置在显示区域周围的驱动电路TFT，其中像素TFT和驱动电路TFT的栅电极由第一导电层形成，栅电极通过与形成的栅极布线的连接器电接触 并且连接器设置在像素TFT和驱动电路TFT的沟道形成区域的外侧。

    DISPLAY DEVICE AND CONTROLLING METHOD THEREOF
    88.
    发明申请
    DISPLAY DEVICE AND CONTROLLING METHOD THEREOF 有权
    显示装置及其控制方法

    公开(公告)号：US20110278579A1

    公开(公告)日：2011-11-17

    申请号：US13193127

    申请日：2011-07-28

    申请人： Keisuke Miyagawa ,  Jun Koyama

    发明人： Keisuke Miyagawa ,  Jun Koyama

    IPC分类号： H01L33/16

    CPC分类号： H01L27/124 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2320/029 ,  G09G2320/0295 ,  G09G2320/043 ,  G09G2330/021 ,  G09G2330/028

    摘要： A conventional setting voltage was a value with an estimated margin of a characteristic change of a light emitting element. Therefore, a voltage between the source and drain of a driver transistor Vds had to be set high (Vds≧Vgs−VTh+a). This caused high heat generation and power consumption because a voltage applied to the light emitting element. The invention is characterized by feedbacking a change in a current value in accordance with the deterioration of a light emitting element and a power source voltage controller which modifies a setting voltage. Namely, according to the invention, the setting voltage is to be set in the vicinity of the boundary (critical part) between a saturation region and a linear region, and a voltage margin for the deterioration is not required particularly for an initial setting voltage.

    摘要翻译： 传统的设定电压是具有发光元件的特性变化的估计裕量的值。 因此，必须将驱动晶体管Vds的源极和漏极之间的电压设置为高（Vds≥Vgs-VTh + a）。 这导致由于施加到发光元件的电压而导致高的发热和功率消耗。 本发明的特征在于根据改变设定电压的发光元件和电源电压控制器的劣化反馈电流值的变化。 也就是说，根据本发明，将设定电压设定在饱和区域和线性区域之间的边界（临界部分）附近，并且对初始设定电压不需要劣化的电压余量。

    Semiconductor device
    90.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08054596B2

    公开(公告)日：2011-11-08

    申请号：US12400380

    申请日：2009-03-09

    申请人： Jun Koyama ,  Yoshifumi Tanada ,  Hideaki Shishido

    发明人： Jun Koyama ,  Yoshifumi Tanada ,  Hideaki Shishido

    IPC分类号： H02H9/00 ,  H01C7/12 ,  H02H1/00 ,  H02H1/04 ,  H02H3/22 ,  H02H9/06

    CPC分类号： H01L27/0251 ,  G02F1/136204

    摘要： An element is protected without hampering an actual operation in the case where overvoltage that might damage the element is applied. A semiconductor device includes a first potential supply terminal 100; a second potential supply terminal 101; a protection circuit 107 which includes a voltage divider 102 electrically connected to the first potential supply terminal 100 and the second potential supply terminal 101, a control circuit 103, and a bypass circuit 106; and a functional circuit 108 which is electrically connected to the first potential supply terminal 100 and the second potential supply terminal 101 through the protection circuit 107.

    摘要翻译： 在可能损坏元件的过电压被施加的情况下，元件被保护而不妨碍实际操作。 半导体器件包括第一电位供给端子100; 第二电位供给端子101; 保护电路107，其包括电连接到第一电位端子100和第二电位端子101的分压器102，控制电路103和旁路电路106; 以及通过保护电路107与第一电位供给端子100和第二电位供给端子101电连接的功能电路108。