公开(公告)号：US20070096103A1

公开(公告)日：2007-05-03

申请号：US11612768

申请日：2006-12-19

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L29/04

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

摘要翻译： 根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。

公开(公告)号：US07186602B2

公开(公告)日：2007-03-06

申请号：US11041413

申请日：2005-01-25

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L21/84 ,  H01L21/324

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

摘要翻译： 根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。

公开(公告)号：US20060240604A1

公开(公告)日：2006-10-26

申请号：US11397925

申请日：2006-04-03

申请人： Hirotaka Yamaguchi ,  Masakiyo Matsumura ,  Yukio Taniguchi

发明人： Hirotaka Yamaguchi ,  Masakiyo Matsumura ,  Yukio Taniguchi

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L29/41733 ,  H01L29/66757

摘要： A method of producing a thin film transistor comprises irradiating a resist on a glass base plate with a ray from a light source through a mask and, thereafter, developing the resist to form contact holes, using an i-ray as the ray.

摘要翻译： 一种薄膜晶体管的制造方法，其特征在于，将来自光源的光线通过掩模在玻璃基板上照射抗蚀剂，然后利用i射线作为光线照射抗蚀剂，形成接触孔。

公开(公告)号：US20060210888A1

公开(公告)日：2006-09-21

申请号：US11372075

申请日：2006-03-10

申请人： Yukio Taniguchi

发明人： Yukio Taniguchi

IPC分类号： G03B27/42 ,  G21K5/00 ,  G03F1/00

CPC分类号： G03F1/30 ,  G03F1/32 ,  G03F1/38

摘要： A problem of a decrease in transmissive light, which partly occurs at a boundary between two polarization modulation regions of a polarized phase shift mask, is solved. A photomask for use in an exposure apparatus which forms an exposure pattern by illumination includes at least two polarization modulation regions which produce mutually incoherent polarized light components and adjoin each other, at least two phase modulation regions which impart a phase difference of 180° and adjoin each other, and amplitude modulation regions which decrease transmittance. A contact line between the polarization modulation regions and a contact line between the phase modulation regions are located at a corresponding position, and the amplitude modulation regions are provided on both sides of the common contact line, with a predetermined distance from the common contact line.

公开(公告)号：US07101436B2

公开(公告)日：2006-09-05

申请号：US10603821

申请日：2003-06-26

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B29/16

CPC分类号： G03B21/56 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012

摘要： A crystallization apparatus includes an optical illumination system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an inverse peak type light intensity distribution including a minimum light intensity in a point corresponding to a phase shift portion of the phase shift mask to produce a crystallized semiconductor film. A wavefront dividing element is disposed on a light path between the optical illumination system and the phase shift mask. The wavefront dividing element wavefront-divides the light beam supplied from the optical illumination system into a plurality of light beams, and condenses the wavefront-divided light beams in the corresponding phase shift portion or in the vicinity of the portion.

摘要翻译： 结晶装置包括：光照射系统，用于照射相移掩模，并且对具有反相峰值型光强度分布的光束照射非晶半导体膜，所述光束具有相对于相的相移部分的点的最小光强度 移位掩模以产生结晶半导体膜。 波前分割元件设置在光学照明系统和相移掩模之间的光路上。 波前分割元件将从光学照明系统提供的光束前后分割为多个光束，并将波前划分的光束聚集在相应的相移部分或该部分附近。

公开(公告)号：US07063478B2

公开(公告)日：2006-06-20

申请号：US10692798

申请日：2003-10-27

申请人： Yukio Taniguchi ,  Masakiyo Matsumura

发明人： Yukio Taniguchi ,  Masakiyo Matsumura

IPC分类号： G01F9/00

CPC分类号： H01L29/66757 ,  G03F7/00 ,  Y10T403/13

摘要： A crystallization apparatus includes a mask and an illumination system which illuminates the mask with a light beam, the light beam from the illumination system becoming a light beam having a light intensity distribution with an inverse peak pattern when transmitted through the mask, and irradiating a polycrystal semiconductor film or an amorphous semiconductor film, thereby generating a crystallized semiconductor film. The mask includes a light absorption layer having light absorption characteristics according to the light intensity distribution with the inverse peak pattern.

摘要翻译： 结晶装置包括掩模和用光束照射掩模的照明系统，当透射通过掩模时，来自照明系统的光束成为具有反峰值图案的光强度分布的光束，并且照射多晶体 半导体膜或非晶半导体膜，从而生成结晶半导体膜。 掩模包括具有根据具有反峰值图案的光强度分布的光吸收特性的光吸收层。

公开(公告)号：US20060065185A1

公开(公告)日：2006-03-30

申请号：US11224014

申请日：2005-09-13

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： C30B23/00 ,  C30B28/12 ,  C30B28/14 ,  C30B25/00

CPC分类号： H01L29/78675 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0734 ,  G02B5/02 ,  G02B5/3083 ,  G03F1/28 ,  G03F1/34 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/66757 ,  Y10T117/10

摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

公开(公告)号：US07018749B2

公开(公告)日：2006-03-28

申请号：US10661600

申请日：2003-09-15

申请人： Yukio Taniguchi

发明人： Yukio Taniguchi

IPC分类号： G01F9/00

CPC分类号： H01L21/0268 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  H01L21/2026

摘要： A crystallization apparatus includes an image forming optical system which has an image side numerical aperture set to a value required to generate a light intensity distribution with an inverse peak pattern and sets an amorphous semiconductor film and a phase shift mask to an optically conjugate relationship. The phase shift mask has a boundary area which extends along a first axial line, and a first area and a second area which are arranged on both sides of the boundary area have a predetermined phase difference therebetween. The boundary area has a phase distribution which varies from a phase of the first area to a phase of the second area.

摘要翻译： 结晶装置包括图像形成光学系统，其具有设置成产生具有逆峰值图案的光强度分布所需的值的图像侧数值孔径，并将非晶半导体膜和相移掩模设置为光学共轭关系。 相移掩模具有沿着第一轴线延伸的边界区域，并且布置在边界区域的两侧上的第一区域和第二区域之间具有预定的相位差。 边界区域具有从第一区域的相位到第二区域的相位的相位分布。

公开(公告)号：US20060044565A1

公开(公告)日：2006-03-02

申请号：US11210863

申请日：2005-08-25

申请人： Masakiyo Matsumura ,  Yukio Taniguchi

发明人： Masakiyo Matsumura ,  Yukio Taniguchi

IPC分类号： G01C19/72

CPC分类号： H01L21/02678 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/123 ,  G03F1/34 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T117/1004

摘要： A light irradiation apparatus includes a light modulation element which has a phase modulation area having at least one basic pattern for modulating a light beam, an illumination system which illuminates the phase modulation area of the light modulation element with a light beam, and an image formation optical system which causes a light beam on an irradiation target surface a light intensity distribution having an inverse-peak-shaped pattern formed based on the light beam phase-modulated by the phase modulation element to fall on an irradiation target object. Dimensions of the basic pattern are not greater than a point spread function range of the image formation optical system converted in terms of the light modulation element. The phase modulation area is configured in such a manner that a phase distribution in a light complex amplitude distribution on the irradiation target surface becomes a saw-tooth-like distribution along a line segment in a lateral direction.

摘要翻译： 光照射装置包括光调制元件，该调制元件具有至少一个用于调制光束的基本图案的相位调制区域，照射光调制元件的相位调制区域的照明系统和图像形成 光学系统，其使得在照射目标表面上的光束具有基于由相位调制元件相位调制的光束形成的具有反峰形图案的光强度分布落在照射目标对象上。 基本图案的尺寸不大于根据光调制元件转换的图像形成光学系统的点扩散功能范围。 相位调制区域被配置为使得照射目标表面上的光复数振幅分布中的相位分​​布沿着横向方向的线段变成锯齿状分布。

公开(公告)号：US20050159815A1

公开(公告)日：2005-07-21

申请号：US10845226

申请日：2004-05-14

申请人： Mikio Kamimura ,  Yukio Taniguchi

发明人： Mikio Kamimura ,  Yukio Taniguchi

IPC分类号： A61L27/00 ,  A61B17/70 ,  A61F2/00 ,  A61F2/28 ,  A61F2/30 ,  A61F2/44 ,  A61F2/46

CPC分类号： A61F2/4455 ,  A61B17/70 ,  A61F2/442 ,  A61F2/4611 ,  A61F2002/2817 ,  A61F2002/2835 ,  A61F2002/30168 ,  A61F2002/3082 ,  A61F2002/448 ,  A61F2230/0043 ,  A61F2310/00023 ,  A61F2310/00029 ,  A61F2310/00203 ,  A61F2310/00239 ,  A61F2310/00293

摘要： An intervertebral spacer is to be inserted between two vertebral bodies. The intervertebral spacer including a pair of block bodies. Each of the block bodies has an abdominal side portion to be directed to an abdominal side of a patient when inserted in the vertebral bodies and a back side portion to be directed to a back side of the patient when inserted in the vertebral bodies. Each block body is configured such that a width of the abdominal side portion is greater than a width of the back side portion.

摘要翻译： 椎间隔垫应插入两个椎体之间。 椎间隔垫包括一对块体。 每个块体具有腹部侧部分，当插入到椎体中时被引导到患者的腹侧，并且当插入到椎体中时，背侧部分被引导到患者的背侧。 每个块体构造成使得腹侧部分的宽度大于后侧部分的宽度。