公开(公告)号：US20120079985A1

公开(公告)日：2012-04-05

申请号：US13313736

申请日：2011-12-07

申请人： Hirohisa YAMAZAKI ,  Yuji Takebayashi ,  Masanori Sakai ,  Tsutomu Kato

发明人： Hirohisa YAMAZAKI ,  Yuji Takebayashi ,  Masanori Sakai ,  Tsutomu Kato

IPC分类号： C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45557 ,  H01L21/02112 ,  H01L21/02205

摘要： There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.

摘要翻译： 提供了一种基板处理方法，包括以下步骤：将源气体供应到容纳基板的处理室中; 去除源气体和源气体的中间体残留在处理室中; 在基本上停止排出处理室中的气氛的状态下将臭氧供给到处理室中; 并且除去臭氧和中间体的臭氧残留在处理室中; 这些步骤重复多次，由此通过交替地供给源气体和臭氧而不使其彼此混合而在基板的表面上形成氧化膜。

公开(公告)号：US08047158B2

公开(公告)日：2011-11-01

申请号：US11933169

申请日：2007-10-31

申请人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

发明人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

IPC分类号： C23C16/509 ,  C23C16/505 ,  C23C16/503 ,  C23C16/50 ,  C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45546 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/4583 ,  H01J37/3244

摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

公开(公告)号：US07900580B2

公开(公告)日：2011-03-08

申请号：US11933208

申请日：2007-10-31

申请人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

发明人： Tadashi Kontani ,  Kazuyuki Toyoda ,  Taketoshi Sato ,  Toru Kagaya ,  Nobuhito Shima ,  Nobuo Ishimaru ,  Masanori Sakai ,  Kazuyuki Okuda ,  Yasushi Yagi ,  Seiji Watanabe ,  Yasuo Kunii

IPC分类号： C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/509 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45546 ,  C23C16/452 ,  C23C16/45542 ,  C23C16/45578 ,  C23C16/4583 ,  H01J37/3244

摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

摘要翻译： 基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室， 缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

公开(公告)号：US20100297846A1

公开(公告)日：2010-11-25

申请号：US12801082

申请日：2010-05-20

申请人： Yukinao Kaga ,  Tatsuyuki Saito ,  Masanori Sakai

发明人： Yukinao Kaga ,  Tatsuyuki Saito ,  Masanori Sakai

IPC分类号： H01L21/285 ,  C23C16/06 ,  C23C16/34

CPC分类号： H01L21/28562 ,  C23C16/34 ,  C23C16/45527 ,  C23C16/45544 ,  H01L21/76841

摘要： A method of manufacturing a semiconductor device includes the steps of: forming a first metal film on the substrate placed in a processing chamber by alternately supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber more than once; forming a second metal film on the substrate by simultaneously supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber once so that the metal compound and the reactant gas are mixed with each other; and modifying at least one of the first metal film and the second metal film is modified using at least one of the reactant gas and an inert gas after at least one of the alternate supply process and the simultaneous supply process. It thus becomes possible to provide a dense, low-resistive metal film having a smooth film surface with a better quality in comparison with a titanium nitride film formed by the CVD method at a higher deposition rate, that is, at a higher productivity, in comparison with a titanium nitride film formed by the ALD method at a low temperature.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：通过交替地供给至少一种作为无机原料的金属化合物和具有反应性的反应物气体，在放置在处理室中的基板上形成第一金属膜 金属化合物对处理室不止一次; 通过同时将至少一种作为无机原料的金属化合物和与金属化合物具有反应性的反应物气体同时供给到处理室，从而在基板上形成第二金属膜，使得金属化合物和反应气体 相互混合; 并且在交替供给处理和同时供给处理中的至少一个之后，使用至少一种反应气体和惰性气体来修饰第一金属膜和第二金属膜中的至少一个。 因此，与通过CVD法形成的氮化钛膜以更高的生产率，即更高的生产率相比，可以提供具有光滑膜表面的致密的低电阻金属膜，具有更好的质量 与在低温下通过ALD法形成的氮化钛膜进行比较。

公开(公告)号：US20100186774A1

公开(公告)日：2010-07-29

申请号：US12671189

申请日：2008-09-09

申请人： Hironobu Miya ,  Yuji Takebayashi ,  Masanori Sakai ,  Shinya Sasaki ,  Hirohisa Yamazaki ,  Atsuhiko Suda ,  Takashi Tanioka

发明人： Hironobu Miya ,  Yuji Takebayashi ,  Masanori Sakai ,  Shinya Sasaki ,  Hirohisa Yamazaki ,  Atsuhiko Suda ,  Takashi Tanioka

IPC分类号： B08B9/00 ,  H01L21/469

CPC分类号： C23C16/4405 ,  B08B7/0035 ,  H01L21/67109 ,  H01L21/67757 ,  H01L21/67769

摘要： Provided is a cleaning method for removing a film adhered inside a processing chamber of a substrate processing apparatus used for forming a desired film on a substrate by supplying a material gas for film formation. The method is provided with a step of supplying a halogen containing gas into the processing chamber, and a step of supplying a fluorine containing gas into the processing chamber while supplying the halogen containing gas, after starting to supply the halogen containing gas. In the step of supplying the fluorine containing gas, a supply flow volume ratio of the halogen containing gas to the entire gas supplied into the processing chamber is within a range of 20-25%.

摘要翻译： 提供了一种清洁方法，用于通过提供用于成膜的材料气体来除去附着在用于在基板上形成期望的膜的基板处理装置的处理室内的膜。 该方法具有向处理室供给含卤素气体的步骤，以及在开始供应含卤素气体之后，在供应含卤素气体的同时向处理室供应含氟气体的步骤。 在供给含氟气体的步骤中，含卤素气体与供给到处理室的全部气体的供给流量比在20〜25％的范围内。

公开(公告)号：US07753601B2

公开(公告)日：2010-07-13

申请号：US11948123

申请日：2007-11-30

申请人： Masanori Sakai

发明人： Masanori Sakai

IPC分类号： G03B9/32

CPC分类号： G03B7/10 ,  H04N5/2254 ,  H04N5/23293 ,  H04N5/2353 ,  H04N2101/00

摘要： A control method for a mechanical shutter in an image sensing apparatus that has the mechanical shutter which includes and a second curtain held in a pre-travel initial position using electric power, that performs image sensing using an image sensor, and that has an electronic viewfinder function. The voltage of the electric power for holding the second curtain is reduced during execution of the electronic viewfinder function, the voltage of the electric power for holding the second curtain is raised if a shutter speed set for image sensing is faster than a preset period in a case where still image sensing is instructed, and the second curtain is made to travel when a period corresponding to the shutter speed has elapsed.

摘要翻译： 一种用于具有机械快门的图像感测装置中的机械快门的控制方法，所述机械快门包括使用电力保持在预行程初始位置的第二帘幕，其使用图像传感器执行图像感测，并且具有电子取景器 功能。 在执行电子取景器功能期间，用于保持第二帘幕的电力的电压降低，如果为图像感测设定的快门速度比预定时间段快，则用于保持第二帘幕的电力的电压升高 指示静止图像感测的情况，并且当经过与快门速度相对应的周期时，使第二帘幕行进。

公开(公告)号：US07713582B2

公开(公告)日：2010-05-11

申请号：US12039686

申请日：2008-02-28

申请人： Masanori Sakai ,  Toru Kagaya ,  Nobuhito Shima

发明人： Masanori Sakai ,  Toru Kagaya ,  Nobuhito Shima

IPC分类号： C23C16/455

CPC分类号： C23C16/455

摘要： A film-forming method that includes providing a substrate to be film-formed in a reaction chamber of an apparatus that includes: the reaction chamber; a first gas supply pipe in fluid communication with the reaction chamber for carrying a first processing gas to the reaction chamber; a second gas supply pipe in fluid communication with the reaction chamber for carrying a second processing gas to the reaction chamber; a gas reservoir in fluid communication with the first gas supply pipe; and a bypass line in fluid communication with the first gas supply pipe, the bypass line bypassing the gas reservoir; and the steps of alternately supplying the first processing gas and the second processing gas into the reaction chamber a plurality of times to form a film on the substrate, and wherein when the first gas is supplied, the gas reservoir or the bypass line is selected to supply the first gas into the reaction chamber through the first gas supply pipe, and when the second gas is supplied the second gas is supplied through the second gas supply pipe.

摘要翻译： 一种成膜方法，其特征在于，包括在反应室内设置成膜的基板，所述反应室包括：所述反应室; 与所述反应室流体连通以将第一处理气体输送到所述反应室的第一气体供给管; 与所述反应室流体连通以将第二处理气体输送到所述反应室的第二气体供给管; 与所述第一气体供给管流体连通的气体储存器; 以及与第一气体供给管流体连通的旁通管路，旁通管线绕过气体储存器; 以及将第一处理气体和第二处理气体交替地供给到反应室中以在基板上形成膜的步骤，并且其中当供应第一气体时，选择气体储存器或旁路管线 通过第一气体供给管将第一气体供应到反应室中，并且当供应第二气体时，通过第二气体供给管供给第二气体。

公开(公告)号：US07678496B2

公开(公告)日：2010-03-16

申请号：US12323508

申请日：2008-11-26

申请人： Masanori Sakai ,  Yasuo Kondo ,  Kyoko Honbo ,  Tokiyoshi Hirasawa ,  Masayuki Terada

发明人： Masanori Sakai ,  Yasuo Kondo ,  Kyoko Honbo ,  Tokiyoshi Hirasawa ,  Masayuki Terada

IPC分类号： H01M2/14 ,  H01M4/56 ,  H01M4/66

CPC分类号： H01M4/82 ,  H01M4/68 ,  H01M4/685 ,  H01M6/10 ,  Y10T29/10

摘要： An object of the present invention is to take fundamental measures against the phenomenon that the positive current collector of a lead-acid battery elongates due to corrosion, in consideration of a mechanism, and to inhibit corrosion elongation. A current collector is prepared by the steps of: mixing a lead oxide of pinning compounds for inhibiting recrystallization with the atomized powder of lead or a lead alloy; and then powder-rolling the mixture. A lead-acid battery is composed with the use of the current collector.

摘要翻译： 本发明的目的是针对铅酸电池的正极集电体由于腐蚀而延长的现象，考虑到机理，并且抑制腐蚀伸长的基本措施。 通过以下步骤制备集电器：将用于抑制再结晶的钉扎化合物的氧化铅与铅或铅合金的雾化粉末混合; 然后粉碎该混合物。 使用集电器组成铅酸电池。

公开(公告)号：US20100063236A1

公开(公告)日：2010-03-11

申请号：US12521057

申请日：2007-12-27

申请人： Yasushi Sugiura ,  Masanori Sakai

发明人： Yasushi Sugiura ,  Masanori Sakai

IPC分类号： C08G77/08 ,  C07C211/63 ,  C07F7/10 ,  B01J31/02

CPC分类号： B01J31/0239 ,  B01J2231/76 ,  C07F7/0836 ,  C07F7/0874 ,  C07F7/0876 ,  C08G77/08

摘要： In the present invention, when an organopolysiloxane is produced by a dealcoholization condensation reaction between a silicon atom-bonded hydroxy group and a silicon atom-bonded alkoxy group, a quaternary ammonium ion-containing compound such as an alkylammonium hydroxide compound or a silanolate thereof is used as a catalyst. The catalyst for the dealcoholization condensation reaction of the present invention is easily removed after use and is stable. For this reason, when an organopolysiloxane is produced using the aforementioned catalyst, it is not necessary to use complicated production steps or a large amount of the catalyst.

摘要翻译： 在本发明中，当通过与硅原子键合的羟基与硅原子键合的烷氧基之间的脱醇缩合反应生产有机聚硅氧烷时，含季铵离子的化合物如烷基氢氧化铵化合物或其硅烷醇盐是 用作催化剂。 本发明的脱醇缩合反应用催化剂在使用后容易除去，稳定。 因此，使用上述催化剂制造有机聚硅氧烷时，不需要复杂的制造工序或大量的催化剂。

公开(公告)号：US07662727B2

公开(公告)日：2010-02-16

申请号：US11979707

申请日：2007-11-07

申请人： Hironobu Miya ,  Norikazu Mizuno ,  Masanori Sakai ,  Shinya Sasaki ,  Hirohisa Yamazaki

发明人： Hironobu Miya ,  Norikazu Mizuno ,  Masanori Sakai ,  Shinya Sasaki ,  Hirohisa Yamazaki

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31645 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31641

摘要： To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a silicon wafer having a surface terminated by H into a processing chamber; supplying alcohol to supply the alcohol into the processing chamber as a first gas; first purging to discharge the first gas from an inside of the processing chamber; supplying a raw material to supply a source gas into the processing chamber as a second gas; second purging to discharge the second gas from the inside of the processing chamber; generating a desired thin film on the silicon wafer by setting as one cycle at least the aforementioned supplying alcohol, first purging, supplying the raw material, and second purging, and by repeating this cycle a prescribed number of times; and unloading the silicon wafer, with said desired thin film generated thereon, from the inside of the processing chamber.

摘要翻译： 在通过将原料和醇交替地流动到处理室来形成薄膜的方法中，为了提高台阶覆盖率和装载效果，不会引起生产量的恶化和成本的增加。 该方法包括：将具有由H端接的表面的硅晶片加载到处理室中; 供应酒精以将酒精作为第一气体供应到处理室中; 首先从处理室的内部排出第一气体; 提供原料以将源气体作为第二气体供应到处理室中; 第二次吹扫以从处理室的内部排出第二气体; 通过将至少上述供应醇设置为一个循环，首先清洗，供给原料和第二次清洗，并通过重复该循环规定次数，在硅晶片上产生所需的薄膜; 并且从处理室的内部卸载其上产生有所需要的薄膜的硅晶片。