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101 条记录 (耗时 0.029 秒)

    Semiconductor laser
    81.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US07539225B2

    公开(公告)日：2009-05-26

    申请号：US11258053

    申请日：2005-10-26

    申请人： Yoshihiko Hanamaki ,  Kenichi Ono

    发明人： Yoshihiko Hanamaki ,  Kenichi Ono

    IPC分类号： H01S3/04 ,  H01S3/14

    CPC分类号： H01S5/0425 ,  B82Y20/00 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3054 ,  H01S5/3434 ,  H01S5/34373 ,  H01S2304/04

    摘要： In a semiconductor laser, a n-type AlGaInP clad layer is formed on a n-type GaAs substrate and an active layer having an emission wavelength of 600 to 850 nm is formed on the n-type AlGaInP clad layer. A p-type AlGaInP clad layer is formed on the active layer and a p-type AlGaAs contact layer in which the Al composition is controlled so that the p-type AlGaAs contact layer has an optical bandgap larger than that of the active layer is formed on the p-type AlGaInP clad layer. A p-type GaAs cap layer is formed on the p-type AlGaAs contact layer.

    摘要翻译： 在半导体激光器中，在n型GaAs衬底上形成n型AlGaInP覆盖层，在n型AlGaInP覆盖层上形成发光波长为600〜850nm的有源层。 在有源层上形成p型AlGaInP覆盖层，并且在其中控制Al组分的p型AlGaAs接触层中形成具有比有源层的光学带隙大的p型AlGaAs接触层的光学带隙 在p型AlGaInP覆层上。 在p型AlGaAs接触层上形成p型GaAs覆盖层。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
    82.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 失效
    半导体器件及其制造方法

    公开(公告)号：US20080265275A1

    公开(公告)日：2008-10-30

    申请号：US12115565

    申请日：2008-05-06

    申请人： Yoshihiko Hanamaki ,  Kenichi Ono ,  Masayoshi Takemi ,  Makoto Takada

    发明人： Yoshihiko Hanamaki ,  Kenichi Ono ,  Masayoshi Takemi ,  Makoto Takada

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01S5/22 ,  H01L33/30 ,  H01S5/0014 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/3201 ,  H01S5/3213 ,  H01S5/3215

    摘要： A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer.

    摘要翻译： 激光二极管包括设置在n半导体衬底上且与n半导体衬底晶格匹配的第一n包层，其中第一n包层为n-AlGaInP或n-GaInP; 由第一n包层支撑的n-AlGaAs的第二n包层; 以及设置在所述第一n包层和所述第二n包层之间的插入层，其中所述插入层包括与所述第一n包层相同的元件，所述插入层具有相同的Al和Ga的组成比（和 P）作为第一n包层，并且插入层包含比第一n包层更低的In的组成比。

    Information processing apparatus and information processing method
    83.
    发明授权
    Information processing apparatus and information processing method 失效
    信息处理装置和信息处理方法

    公开(公告)号：US07420544B2

    公开(公告)日：2008-09-02

    申请号：US10235662

    申请日：2002-09-06

    申请人： Kenichi Ono ,  Hidenori Yamaji

    发明人： Kenichi Ono ,  Hidenori Yamaji

    IPC分类号： G06F3/02

    CPC分类号： G06F3/0489

    摘要： A new-type user interface for providing a hotkey is disclosed, which has high operability and which can also be used to provide the hotkey in a conventional manner. In information processing apparatus has a hierarchical structure including a keyboard as one of hardware parts in a bottom layer, a built-in controller as one of hardware parts in a layer higher than the keyboard, and an operating system and an application program as software part in a layer higher than the built-in controller, wherein the operating system and the application program are connected to the built-in controller via a bus. In this information processing apparatus, if an Fn key is pressed and released, information indicating that the Fn key has been pressed and released is supplied to a utility via an SPIC which is logically different from the keyboard controller. In response, a launcher including hotkey menu icons corresponding to additional keys is displayed on a display.

    摘要翻译： 公开了一种用于提供热键的新型用户界面，其具有高可操作性，并且还可以用于以常规方式提供热键。 信息处理装置具有包括作为底层的硬件部件之一的键盘的层次结构，作为高于键盘的层中的硬件部件之一的内置控制器以及作为软件部分的操作系统和应用程序 在比内置控制器高的层中，其中操作系统和应用程序经由总线连接到内置控制器。 在该信息处理装置中，如果Fn键被按下并释放，则表示已经按下并释放了Fn键的信息通过逻辑上不同于键盘控制器的SPIC提供给公用事业。 作为响应，显示器上显示包括对应于附加键的热键菜单图标的发射器。

    Tapered roller bearing
    84.
    发明授权
    Tapered roller bearing 有权
    圆锥滚子轴承

    公开(公告)号：US07320550B2

    公开(公告)日：2008-01-22

    申请号：US11652683

    申请日：2007-01-12

    申请人： Kenichi Ono ,  Kunihiko Yokota ,  Hiroshi Tachi

    发明人： Kenichi Ono ,  Kunihiko Yokota ,  Hiroshi Tachi

    IPC分类号： F16C19/50 ,  F16C33/46 ,  F16C33/66

    CPC分类号： F16C33/6674 ,  F16C19/364 ,  F16C19/54 ,  F16C33/543 ,  F16C33/6651 ,  F16C2240/40 ,  F16C2361/61 ,  F16H57/021 ,  F16H57/037 ,  F16H57/0421 ,  F16H57/0471 ,  F16H57/0483 ,  F16H2048/423

    摘要： A tapered roller bearing includes an outer race, an inner race, a plurality of tapered rollers, and a cage. A small-diameter end portion of the inner race is formed with a small flange portion for limiting axial movement of the tapered rollers and a cylindrical portion which has a less diameter than the small flange portion and is connected to an axial outer end of the small flange portion. The cage is formed at a small-diameter end portion thereof with a bent portion which is bent inward in a radial direction. A small-diameter end portion of the cage has a bent portion which is faced to an outer surface of the cylindrical portion of the inner race with a predetermined clearance therefrom such that a labyrinth is created between the cage and the inner race.

    摘要翻译： 圆锥滚子轴承包括外圈，内圈，多个圆锥滚子和保持架。 内座圈的小直径端部形成有用于限制圆锥滚子的轴向运动的小凸缘部分和具有比小凸缘部分更小的直径的圆柱形部分，并且连接到小型凸缘部分的轴向外端 凸缘部分。 保持架在其小直径端部处形成有向径向内侧弯曲的弯曲部。 保持架的小直径端部具有弯曲部分，该弯曲部分与内座圈的圆柱形部分的外表面具有预定的间隙，使得在保持架和内圈之间产生迷宫。

    Semiconductor laser drive apparatus, optical write apparatus, imaging apparatus, and semiconductor laser drive method
    85.
    发明授权
    Semiconductor laser drive apparatus, optical write apparatus, imaging apparatus, and semiconductor laser drive method 有权
    半导体激光驱动装置，光写入装置，成像装置和半导体激光驱动方法

    公开(公告)号：US07292612B2

    公开(公告)日：2007-11-06

    申请号：US10757390

    申请日：2004-01-15

    申请人： Kenichi Ono

    发明人： Kenichi Ono

    IPC分类号： H01S3/00

    CPC分类号： H01S5/042 ,  B41J2/471 ,  H01S3/0912 ,  H01S5/0427 ,  H01S5/06808 ,  H01S5/0683

    摘要： A semiconductor laser drive apparatus and method are disclosed in order to obtain an optimal laser emission pulse that can reduce inherent light emission that may cause fogging and degradation of a photoconductor and also reduce turn on delay. Specifically, a light emission command signal is delayed at a delay unit based on a delay control signal so that a modulation signal is output. The light emission command signal and the delay signal are logically added to a command signal from an external source at a threshold signal generation unit so that a threshold ON signal is output. The modulation signal and the threshold ON signal respectively drive a modulation current switch and a threshold current switch so that a semiconductor laser drive current is generated. The threshold current is sampled according to a sample hold signal supplied from an external source and APC is performed on the sampled threshold current. In a differential quantum efficiency detection unit, an operation of determining differential quantum efficiency based on a current for obtaining a predetermined amount of light and a current for obtaining a portion of the predetermined amount of light is performed, and a light emission current is calculated. By adding the calculated light emission current and an arbitrary current that may be externally set, a modulation current for switching the semiconductor laser can be obtained.

    摘要翻译： 公开了一种半导体激光器驱动装置和方法，以获得可以减少可能导致光电导体的起雾和劣化的固有光发射的最佳激光发射脉冲，并且还减少导通延迟。 具体地，发光指令信号基于延迟控制信号以延迟单元被延迟，从而输出调制信号。 光发射指令信号和延迟信号在阈值信号产生单元上从外部源逻辑地加到指令信号上，从而输出阈值ON信号。 调制信号和阈值ON信号分别驱动调制电流开关和阈值电流开关，从而产生半导体激光器驱动电流。 根据从外部源提供的采样保持信号对阈值电流进行采样，并对采样的阈值电流执行APC。 在差分量子效率检测单元中，执行基于用于获得预定量的光的电流和用于获得预定量的光的一部分的电流来确定差分量子效率的操作，并且计算发光电流。 通过添加计算出的发光电流和可以从外部设定的任意电流，可以获得用于切换半导体激光器的调制电流。

    Semiconductor laser device
    86.
    发明申请
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US20060215717A1

    公开(公告)日：2006-09-28

    申请号：US11284907

    申请日：2005-11-23

    申请人： Kimio Shigihara ,  Kazushige Kawasaki ,  Kenichi Ono

    发明人： Kimio Shigihara ,  Kazushige Kawasaki ,  Kenichi Ono

    IPC分类号： H01S5/00 ,  H01S3/04

    CPC分类号： H01S5/3434 ,  B82Y20/00 ,  H01S5/2004 ,  H01S5/2063 ,  H01S5/22 ,  H01S5/3404 ,  H01S5/3436 ,  H01S2301/14

    摘要： A semiconductor laser device producing light having a TE-polarized component suitable for practical use. A semiconductor laser device includes a GaAsP active layer, InGaP guide layers, and, AlGaInP cladding layers. The GaAsP active layer emits light. The GaAsP active layer is interposed between the InGaP guide layers. The InGaP guide layers and the GaAsP active layer are interposed between the AlGaInP cladding layers. Polarization ratio, which is a ratio of light intensity of TM-polarized light to light intensity of TE-polarized light, is less than 2.3.

    摘要翻译： 一种半导体激光装置，其制造具有适用于实际应用的TE偏光成分的光。 半导体激光器件包括GaAsP有源层，InGaP导向层和AlGaInP包覆层。 GaAsP有源层发光。 GaAsP有源层介于InGaP引导层之间。 InGaP引导层和GaAsP有源层插入在AlGaInP包覆层之间。 TM偏振光的光强度与TE偏振光的光强度的比率的偏振比小于2.3。