摘要:
The invention provides a method for producing alloy flakes for rare earth sintered magnets, which makes uniform the intervals, size, orientation, and shape of the R-rich region and the dendrites of the 2-14-1 phase, which inhibits formation of chill, and which produces flakes that are pulverized into powder of a uniform particle size in the pulverization step in the production of a rare earth sintered magnet, and that are pulverized into powder compactable into a product with a controlled shrink ratio, and alloy flakes for a rare earth sintered magnet obtained by the method, and a rare earth sintered magnet having excellent magnetic properties. The present method includes preparing an alloy melt of a composition consisting of R of rare earth metal elements and the balance M including B and Fe, and supplying and solidifying the alloy melt on a cooling roll, wherein the roll has on its surface linear nucleation inhibiting portions for inhibiting formation of dendrites or the like, and nucleating portions for formation of the dendrites, and wherein the inhibiting portions have a region with a width of more than 100 μm.
摘要:
A television apparatus having a liquid crystal display includes a signal processing portion for reproducing a received video signal, a liquid crystal cell for displaying a video reproduced by the signal processing portion, backlight light sources arranged on a back surface side of the liquid crystal cell for illuminating the liquid crystal cell, drivers for driving the liquid crystal cell, and an inverter for driving the backlight light sources. A transmittance of the liquid crystal cell can be increased because low color-purity cells having a color purity in a range of 40% to 60% is used as the liquid crystal cell. Also, reduction in a color reproductivity of the video caused due to the low color purity can be avoided because a color correcting circuit is provided to the signal processing portion to execute color correcting process on the video signal.
摘要:
In formation of a gate insulating film made of a high dielectric constant metal silicate, atomic layer deposition (ALD) is performed by setting exposure time to a precursor containing a metal or the like to saturation time of a deposition rate by a surface adsorption reaction and by setting exposure time to an oxidizing agent to time required for a composition of a metal oxide film to reach 97% or more of a stoichiometric value.
摘要:
A liquid crystal television apparatus includes a tuner, a signal processor, a liquid crystal cell, a light source for backlight, an inverter, and a power supply, includes a first circuit board including a single-sided board, a second circuit board including a multilayered board, and a connector that electrically connects the first and second circuit boards. An area of the second circuit board is smaller than the first circuit board. The signal processor is mounted on the second circuit board. On the first circuit board, the tuner is arranged in a lower portion of a left or right side of the first circuit board, the inverter is arranged in an upper portion of an opposite side of the first circuit board to the tuner, the power supply is arranged in a lower portion in the opposite side, and the connector is arranged in an upper portion of the same side.
摘要:
A storage apparatus includes a primary storage unit that stores data received from a host computer in a first storage area; a secondary storage unit that stores the data stored in the first storage area in a second storage area; a virtual-storage-area setting unit that logically combines the first storage area and the second storage area to set a plurality of virtual storage areas; and a data-storage control unit that controls data storage in such a manner that the data stored in the first storage area that belongs to a predetermined virtual storage area is stored in the second storage area that belongs to the predetermined virtual storage area.
摘要:
A semiconductor device includes: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate and made of a high-dielectric-constant material composed of a plurality of layers stacked perpendicularly to a principal surface of the semiconductor substrate and associated with respective phases; and a gate electrode formed on the gate insulating film.
摘要:
A semiconductor device has a transistor of a first conductivity type formed on a semiconductor substrate and having a first gate insulating film and a first gate electrode and a transistor of a second conductivity type having a second gate insulating film and a second gate electrode. The first gate electrode is a metal gate electrode having a metal film and the second gate electrode is a fully-silicided gate electrode made of a silicide film.
摘要:
A semiconductor device includes: a semiconductor substrate; a gate insulating film formed on the semiconductor substrate and made of a high-dielectric-constant material composed of a plurality of layers stacked perpendicularly to a principal surface of the semiconductor substrate and associated with respective phases; and a gate electrode formed on the gate insulating film.
摘要:
A mobile unit moves on a reference plane. The mobile unit has an object detection apparatus for detecting an object on the reference plane. The object detection apparatus includes a camera, a mirror, and a computer. The mirror cuts an image received by the camera such that the camera receives an image that is divided into a reference plane image and an object image. The reference plane image contains the reference plane. The object image contains the object and does not contain the reference plane. Therefore, the distance measuring apparatus can easily separate the region including the object and the region including no object, and accurately detect the distance to the object.
摘要:
A sheet for holding and protecting semiconductor wafers which can closely follow up even a wafer surface having large roughness is disclosed. The hot-melt sheet for holding and protecting semiconductor is applied to a surface of a semiconductor wafer to thereby hold and protect the semiconductor wafer in processing the semiconductor wafer. The sheet comprises a hot-melt layer A having a melting point of 105° C. or below. A pressure-sensitive adhesive layer B may be formed on one surface of the hot-melt layer A. A reinforcing layer C having a melting point higher by 20° C. or more than that of hot-melt layer A may further be formed on one surface of the hot-melt layer A, provided that when the pressure-sensitive adhesive layer B is formed on one surface of the hot-melt layer A, the reinforcing layer C is formed on the opposite surface thereof.